500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
2N3810L Microsemi Corporation Transistor visit Digikey
2N3019S Microsemi Corporation Transistor visit Digikey
2N2906AUB Microsemi Corporation Transistor visit Digikey
2N6990 Microsemi Corporation Transistor visit Digikey
2N2222AUB Microsemi Corporation Transistor visit Digikey
2N2221AUB Microsemi Corporation Transistor visit Digikey

Transistor+9012+G+22+C

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Tamb=25 C 0.4 -VCEsat ST 9012 10 3 Tamb=25o C f=20MHz 7 5 4 -Ic =10 -I B 3 , 2 2 5 10 3 mA -I C Base saturation voltage versus collector current ST 9012 V , ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor , Storage Temperature Range TS -55 to +150 O 1) 1) mW C C Valid provided that leads Semtech Electronics
Original
transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013
Abstract: HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications , groups, G and H, according to its DC current gain. As complementary type the NPN transistor HN 9013 is , . 00.55 TO-92 Plastic Package Weight approx. 0.18 g Dimensions in mm Absolute Maximum Ratings Symbol , provided that leads are kept at ambient temperature at a distance of 2 mm from case G S P FORM A , 9012 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 1 V, -lc -
OCR Scan
transistor BR 9013 9012 pnp NPN 9012 9012 transistor BR 9012 9012 npn
Abstract: 9012 700 h FE 500 400 300 400 200 =2 Tam b -IC 5 C 300 100 70 200 , versus collector current V 0.5 MHz ST 9012 typical limits o at Tamb=25 C 0.4 ST 9012 , Base saturation voltage versus collector current ST 9012 V 2 typical limits o at Tamb=25 C , ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor Semtech Electronics
Original
Transistor 9012 G 9013 transistor pnp transistor npn c 9013 ST9012 data sheet transistor 9012 c 9012
Abstract: 18 0 67 085 1 5 008 0 5 10 1 150 220 1 5 19 2.5 10 22 32/ KM 9012 25 20 500 64 350 500 18 07 0 85 , Amp. kmhom or KM90I5 Output KM 9012 KM 9013 SP. , , AM CONVERTER to-92a à EBC KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 , DEVICE SPECIFICATIONS [Ta - 25°C unless otherwise specified ] MAXIMUM RATINGS ELECTRICAL , (VI (VI (VI I m W ) min max (nA) max VCB (v> lv) «VP max ic (mA) VCE (v) (v) typ max -
OCR Scan
CP1005 9011 9012 9013 9014 9018 C 9014 transistor 9011 NPN transistor 9011 transistor transistor 9014 C npn KM90II KM901I/8 KM90II/8 KM90I4 KM9015 KM90I
Abstract: ST 9012 10 3 -VCE=5V fT 1V 10 2 7 0.2 5 4 3 o 25 C 0.1 2 o , 9012 V 2 typical limits o at Tamb=25 C -Ic =10 -I B -VBEsat 1 o -50 C o 25 , ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor , Storage Temperature Range TS -55 to +150 O 1) 1) mW C C Valid provided that leads Semtech Electronics
Original
transistor 9013 H NPN transistor s 9012 9012 NPN Output Transistor br 9013 transistor 9012 c
Abstract: 9012 700 h FE 500 400 300 400 200 =2 Tam b -IC 5 C 300 100 70 200 , versus collector current V 0.5 MHz ST 9012 typical limits o at Tamb=25 C 0.4 Tamb=25o C f=20MHz 7 5 4 -Ic =10 -I B 3 2 0.3 -VCEsat ST 9012 10 3 -VCE=5V , -I C Base saturation voltage versus collector current ST 9012 V 2 typical limits o at , ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Semtech Electronics
Original
NPN SILICON TRANSISTOR 9013 transistors equivalent 9012 9013 transistor datasheet transistor 9013 C 9013 9012 transistor datasheet
Abstract: 150 220 1 5 19 2.5 10 22 3 CL 9012 25 20 5 500 64 350 500 18 0.7 0.85 10 1 02 0£ 250 25 CL , RG = 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS -^(jiROUP TYPE A B C D E F G H 1 @ IC / VCE , TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER , [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS , (dB) tYP InA) max VCB (v) (v) typ max ic vCE (mA) (v) (v) typ max 'c 'B (mA) (mA) (MHz) min typ -
OCR Scan
transistor c 9018 Transistor CL 100 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor
Abstract: 150 220 1 5 19 2.5 10 22 3 2/ CL 9012 25 20 5 500 64 350 500 18 0.7 0.85 10 1 0.2 0£ 250 25 , 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS TYPE A B C D E F G H 1 @ IC / VCE CL9 011 CL 9016 CL , -92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl â'ž 0 o CL 9018 NPN AM/FM IF, FM CONVERTER C , SPECIFICATIONS [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS -
OCR Scan
npn 9016 transistor F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013 transistor 9015 c CL9000
Abstract: ADC-9012 CMOS MICROPROCESSOR-COMPATIBLE 12-BIT A/D CONVERTER P r e c i s i o n M o n o l i t h i c * Inc. PRELIMINARY FEATURES GENERAL DESCRIPTION â'¢ Low Cost â'¢ 12-Bit Accurate  , . FOR ABSOLUTE ACCURACY C IRCUITS. 12-40 10/87, Rev. B ADC-9012 CMOS MICROPROCESSOR-COMPATIBLE , 85mW Power Consumption â'¢ Space Saving 24-Pin 0.3" DIP, or 24-Lead SOL The ADC-9012 is a , . The accuracy of the ADC-9012 results from the addition of precision bipolar transistors in PMIâ'™s -
OCR Scan
ADC9012BW 9012 transistor pin diagram ADC-9012H cs 9012 transistor ADC-9012 TMS32020
Abstract: ^-GROUP TYPE A B C D E F G H 1 @ IC ! VC KM 9011 KM 9016 KM 9018 - 28 - 45 39 - 60 54-80 72-108 97 - , CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO , \ > KM 9011 KM 3016 KM 9018 0.1 1 10 lc ( mA-) 100 DEVICE SPECIFICATIONS [TA - 25°C unless , (v) |v) typ max 'C VCE (mA) (v) (v) typ max >c "b (mA) (mA) ( MHz) min typ 'C VCE (m A) (v) (PF) typ max VCB (v) KM 9011 25 20 3 300 28 198 50 18 0 67 0 85 1 5 008 0 5 10 1 150 220 1 5 19 2.5 10 22 KM -
OCR Scan
9014 ch transistor npn c 9014 100-10L 9018 9013 pnp Transistor 9012 G 22 C
Abstract: www.unisonic.com.tw G 112-166 H 144-202 I 190-300 2 of 3 QW-R201-029.B 9012 PNP SILICON , UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF , -x-T92-B 9012L-x-T92-K 9012G-x-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector  Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk MARKING , ., LTD 1 of 3 QW-R201-029.B 9012  PNP SILICON EPITAXIAL TRANSISTOR ABSOLUTE MAXIMUM Unisonic Technologies
Original
9012L- 9012G-
Abstract: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B , ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT , Collector dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C , G 112-166 UNISONIC TECHNOLOGIES H 144-202 I 190-300 CO., LTD. 1 QW-R201-029,A UTC 9012 UTC PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD. 2 Unisonic Technologies
Original
Abstract: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor , Parameter DC Current Gain at -VCE = 1 V, -IC = 50 mA Current Gain Group G H I at -VCE = 1 V, -IC = 500 , -VCE = 1 V, -IC = 100 mA Gain Bandwidth Product at -VCE = 6 V, -IC = 20 mA C C Symbol Min , 9012 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company Semtech Electronics
Original
Transistor-9013 h Transistor 9013 data sheet NPN 9013 9013 npn transistor transistor c 9013 9013 npn
Abstract: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B , ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Ic Pc Tj TSTG -40 -20 -5 -500 625 150 -55 ~ +150 V V V mA mW °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C Unisonic Technologies
Original
UTC 9013 PDF IC 9012 500ma 40v pnp 9012pnp utc 9012
Abstract: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B , ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT , Collector dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C , G 112-166 UNISONIC TECHNOLOGIES H 144-202 I 190-300 CO., LTD. 1 QW-R201-029,A UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures Unisonic Technologies
Original
Abstract: Temperature Symbol V CES Limit 50 3.5 22 0.4 200 - 6 5 t o +150 Unit Vdc Vdc Vdc Ade °C °C Vebo , Voltage (lc = 1.0 mA) Collector-Emitter Breakdown Voltage (lc = 10 mA) Collector Cutoff Current (V C B - 2 8 V ) V (B R )C E S Symbol Min Typ Max Unit 50 3.5 45 22 - - - - - - , RF Tactical Marketing in Phoenix, AZ. M RF3095 · · · 9.0-12 dB 1.55-1.65 GHz 0.5-1.6 WATTS , Symbol Rejc Max 35 Unit °C/W REV 9 MRF3095 4.2-582 MOTOROLA WIRELESS SEMICONDUCTOR -
OCR Scan
Abstract: ) C om m unication/Signal Intelligence G EN ER A L D E SC R IP T IO N T h e A D 9012 is an 8 , T e c h n o lo g y W a y , P.O. B o x 9106, N o r w o o d ,M A 02 062-9106, U.S.A. Tel: 7 8 1 /3 2 9 -4 7 0 0 W o rld W id e W e b Site: h ttp ://w w w .a n a lo g .c o m Fax: 7 8 1 /3 2 6 -8 7 0 3 , .-V s to +0.5 V E N C O D E Input V o lta g e .-0 .5 V to +5 , 9012SE /SQ /T E /T Q . -55°C to +125°C Storage T em perature R a n g e -
OCR Scan
MIL-STD-883 AD9012 J-28A
Abstract: thyristor Itrms Itavm Tc = 85°C A MCC 90-06 lo 1 MCC 90-08 io 1 MCC 90-12 go 1 MCC 90-12 ho 1 MCC 90-12 io 1 , 90-08 io 8 MCC 90-12 go 8 MCC 90-12 ho 8 MCC 90-12 io 8 MCC 90-14 ho 8 MCC 90-14 io 8 MCC 90-15 io 8 MCC 90-16 ho 8 MCC 90-16 io 8 MCC 90-06 im 8 MCC 90-12 im 8 9 V Nr. E 72873 (M) MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC À MCC ¿ MCC À MCC ¿ MCC À MCC À MCC ¿M CC MCC ¿M CC ¿M CC ¿MCC ¿M CC ¿M CC ¿M CC ¿M C C ¿M C C 130-06 130-08 130-12 130-14 130-16 160-06 160-08 160-12 160-14 160-16 165-06 165-06 165-08 -
OCR Scan
mcc 90-12 MCC 90-16 mcc 250 thyristor abb mcc 90-12 ABB thyristor modules MCC 65 MCC 90-06 io 8 K21-0120 K21-0180 K21-0180A K21-0265 K41-0150 K41-0150C
Abstract: -BIT SHIFT RE6ISTERS B U L L E T I N N O . D L-S 761 13 76 , O C T O B E R 1976 SN 5 4 1 6 6 , S N 5 4 L S 1 6 6 . . . J O R W P A C K A G E SN 7 41 65 , S N 7 4 L S 1 6 5 . . . J O R N P A C K A G E , L M A X IM U M TYPE '165 'L S 1 6 6 CLO C K FREQ U EN CY 26 MHz 35 MHz T Y P IC A L P O W ER D IS S IP A T IO N 2 10 mW 105 mW V g c INMIWT ' 0 wum uLmm , sERMLOumrr C B A INPUT CM J T U « lJ , m IN C O R P O R A T E D P O S T O F F IC E B O X 9012 · ents D A L L A S . T E X A S 75222 -
OCR Scan
SN74LS165 74LS186 74ls186*- 54ls166 IC 74165 74165 block diagram SN5416S SN54LS165 SN74165 LS165 SN54165
Abstract: (Marking Side) 3 4 5 6 7 8 g 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 A 9 Ae A l9 WE RESET , Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. MBM29LV160T-90-12/MBM29LV160B-90-12 , . \ d g i r ^ .\ . T Marking Side (FPT , byte/word at a time using the EPROM programming mechanism of hot electron injection. MBM29LV160T-90-12/MBM29LV160B-90-12 FLEXIBLE SECTOR-ERASE ARCHITECTURE · · · · One 8K word, two 4K words, one 16K word, and -
OCR Scan
9012 3CH 29LV160 B-90/-12 60T-90/-12/MB F9802
Showing first 20 results.