500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Direct from the Manufacturer

Part Manufacturer Description PDF & SAMPLES
ISL9012IRCCZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C
ISL9012IRJRZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C
ISL9012IRFCZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C
ISL9012IRBJZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C
ISL9012IRJMZ-T Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C
ISL9012IRMNZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : TRANSISTOR KIT Supplier : Jameco Manufacturer : Jameco Electronics Stock : 20 Best Price : $59.95 Price Each : $69.95
Part : NXP-SAMPLE-KIT-RFTRANSISTORS-2012-1 Supplier : NXP Semiconductors Manufacturer : Chip1Stop Stock : 148 Best Price : $1.26 Price Each : $1.32
Shipping cost not included. Currency conversions are estimated. 

Transistor 9012 G 22 C

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 18 0 67 085 1 5 008 0 5 10 1 150 220 1 5 19 2.5 10 22 32/ KM 9012 25 20 500 64 350 500 18 07 0 85 ,  V7*. KM 9000 SERIES AM FM RADIO TRANSISTOR KIT SELECT ION GUIDE FOR AM FM RADIO TRANSISTOR KIT AM RECEIVER FM RECEIVER W FM RF KM 9016 Conv. IF) IF 2 KM90II KM 90H KM 9011 AF Amp. kmhom or KM90I5 Output KM 9012 KM 9013 SP. , , AM CONVERTER to-92a à EBC KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 -
OCR Scan
CP1005 9011 9012 9013 9014 9018 C 9014 transistor 9011 transistor transistor 9014 C npn 9016 KM901I/8 KM90II/8 KM90I4 KM9015 KM90I
Abstract: 150 220 1 5 19 2.5 10 22 3 CL 9012 25 20 5 500 64 350 500 18 0.7 0.85 10 1 02 0£ 250 25 CL , RG = 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS -^(jiROUP TYPE A B C D E F G H 1 @ IC / VCE , r-t-1 fr AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER , [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS -
OCR Scan
transistor c 9018 Transistor CL 100 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor
Abstract: 150 220 1 5 19 2.5 10 22 3 2/ CL 9012 25 20 5 500 64 350 500 18 0.7 0.85 10 1 0.2 0£ 250 25 , 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS TYPE A B C D E F G H 1 @ IC / VCE CL9 011 CL 9016 CL , s Lì >J à .-« j&lA CL9000 SERIES AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM/FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER -
OCR Scan
9011 NPN transistor npn 9016 transistor F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013
Abstract: ADC-9012 CMOS MICROPROCESSOR-COMPATIBLE 12-BIT A/D CONVERTER P r e c i s i o n M o n o l i t h i c * Inc. PRELIMINARY FEATURES GENERAL DESCRIPTION â'¢ Low Cost â'¢ 12-Bit Accurate  , . FOR ABSOLUTE ACCURACY C IRCUITS. 12-40 10/87, Rev. B ADC-9012 CMOS MICROPROCESSOR-COMPATIBLE , 85mW Power Consumption â'¢ Space Saving 24-Pin 0.3" DIP, or 24-Lead SOL The ADC-9012 is a , converter built with a high accuracy D/A converter, a precision bipolar transistor high-speed comparator -
OCR Scan
ADC9012BW 9012 9012 transistor pin diagram ADC-9012H cs 9012 transistor ADC-9012 TMS32020
Abstract: ^-GROUP TYPE A B C D E F G H 1 @ IC ! VC KM 9011 KM 9016 KM 9018 - 28 - 45 39 - 60 54-80 72-108 97 - , Vi4». ¡;-i\> V IliÌ Vi- i m B bJ ;7*y V7l_l IlkaW AM. FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT TYPE POLARITY APPLICATIONS CASE KM 9011 NPN AM/FM IF, AM CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO , \ > KM 9011 KM 3016 KM 9018 0.1 1 10 lc ( mA-) 100 DEVICE SPECIFICATIONS [TA - 25°C unless -
OCR Scan
9014 ch transistor npn c 9014 100-10L 9018 9013 pnp 9012 pnp transistor
Abstract: Temperature Symbol V CES Limit 50 3.5 22 0.4 200 - 6 5 t o +150 Unit Vdc Vdc Vdc Ade °C °C Vebo , 2 8 V ) V (B R )C E S Symbol Min Typ Max Unit 50 3.5 45 22 - - - - - - , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Pow er Transistor , RF Tactical Marketing in Phoenix, AZ. M RF3095 · · · 9.0-12 dB 1.55-1.65 GHz 0.5-1.6 WATTS MICROWAVE LINEAR POWER TRANSISTOR CASE 328A-03, STYLE 2 MAXIMUM RATINGS Rating Collector Base Voltage -
OCR Scan
MRF3095
Abstract: -BIT SHIFT RE6ISTERS B U L L E T I N N O . D L-S 761 13 76 , O C T O B E R 1976 SN 5 4 1 6 6 , S N 5 4 L S 1 6 6 . . . J O R W P A C K A G E SN 7 41 65 , S N 7 4 L S 1 6 5 . . . J O R N P A C K A G E , L M A X IM U M TYPE '165 'L S 1 6 6 CLO C K FREQ U EN CY 26 MHz 35 MHz T Y P IC A L P O W ER D IS S IP A T IO N 2 10 mW 105 mW V g c INMIWT ' 0 wum uLmm , sERMLOumrr C B A INPUT CM J T U « lJ , m IN C O R P O R A T E D P O S T O F F IC E B O X 9012 · ents D A L L A S . T E X A S 75222 -
OCR Scan
SN74LS165 74LS186 74ls186*- 54ls166 IC 74165 74165 block diagram SN5416S SN54LS165 SN74165 LS165 SN54165
Abstract: VOLTAGE ORA IN CURRENT â'¢Ji g c\ > ' ! . â'¢ y - L or 0 1 0.2 0.5 1 0 2 0 5.0 10 20 5û 100 Kl -f , ö /I? % con- junction Field Effect Transistor 2SK425 Nf1^ lJ =i h i&jammmm N-Channel Silicon Junction Field Effect Transistor Audio Frequency Amplifier ^/feature i |. rj High gm vrj 1 , 150 *c * V Osi k#1 â'"o O o 4 I , ^ § W: r ^ 1 ss VI)S = 10 V, Vcs = 0, f = 1.0 MHz 13 pF irti ÌS fi M! c ^ r ss VDS-10 V. V(jS = -
OCR Scan
NEC 2SK425 S-10 X17 marking SX50V 4511B1 TC-5700A 092J7I3
Abstract: GATE) â'"c:_ FIG. 2 G IDENTIFIES GATE SYMBOLS. LAST LETTER (A OR C) MAY BE DROPPED IF NO AMBIGUITY , 25°C 2.0 2.0 V max 22, 23, 25 TRIGGERING CHARACTERISTICS Cathode Gate Current to Trigger , Blocking Voltage dv/dt max @ 25°C See Note 5 V/Vs max NOTE 3: The transistor characterization is , ) If Peak Recurrent Forward Current @ iooc, 10 iis, 1% duty cycle (A) Pr Dissipation (mW) Tc , .02 7.5 8.2 300 1.0 3.5 1.0 300 200 3.5 16 c 2N4983 2N4984 2N4985 2N4986 33 30 30 -
OCR Scan
2N4987 2N4988 2N4989 2N4990 3N81 IN4148 anode cathode eto thyristor 3N84 thyristor igc 2N499
Abstract: S e ite 4 , 14-16/84 5. Leiterplatte 5 .1 . B e s tü c lc u n g s s e ite 5.2. Leiterbildseite , Elektrolytkondensator 4,7/63 TGL 38928 C 1042 Elektrolytkondensator 22/25 TGL 38928 C 1043 Elektrolytkondensator 2,2/80 , -120/20-63 TGL 35780 C 1047 Elektrolytkondensator 4,7/63 TGL 38928 VT 1001 Transistor SC 239 P TGL 27147 VT , 1010 Transistor sc 236 D TGL 27147 VT 1011 Transistor sc 236 C TGL 27147 VT 1012 Transistor sc 308 E , Volt * + Mimis an Masse 5 ·· + 50° C 10 kHz (Fe20^-Band) 1,6 A 80 Hz Frequenzbereich -
OCR Scan
3D24N2Y transistor sc 238 9008 transistor transistor sc 308 SAL 41 1008 transistor EDVU-Z-47/50-63 EDUU-N1500-120/20-63
Abstract: Resistance (Typical, Note 1) Operating Information 0 j/ \ (°C /W ) 14 Ld SOIC P a c k a g e . 120 16 Ld SOIC P a c k a g e . 115 M , Package) . 150°C M aximum Storage Temperature R a n g e . -65°C to , Tips Only) Temperature R a n g e . -55°C , GHz lc = 10mA, V c e = 5V - 6 - - 2.5 - GHz Power G ain-Bandwidth Product -
OCR Scan
4733 PNP HFA3046 HFA3096 HFA3127 HFA3128 1-800-4-HARRIS
Abstract: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ · HIGH GAIN WITH LOW OPERATING CURRENT: IS 2 1 EI2 = 9 dB T Y P a t f = 2 G H z, V ce = 2 V, Ic = 7 mA ISsieI2 = 8 .5 dB T Y P at f = 2 G H z, V ce = 1 V, Ic = 5 mA UPA827TF PACKAGE DRAWING , . ELECTRICAL CHARACTERISTICS (T a = 2 5 ° c ) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO Iebo hFE fT fT , , Emitter Cutoff Current at V eb = 1 V , DC Current Gain1 at V c e = 2 V , Ic Ic Ie =0 M -A HA 70 -
OCR Scan
9013 npn transistor pin view 15251 pin configuration of 7496 IC NEC 14324 ic ma 4810 hfe 4538 UPA827TF-T1
Abstract: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE , : Elina. A I C. Bldg. Suite 202 . 7615 Metro Blvd. Edina. MN55435. (612)835-2900. MISSOURI: Kaalaa Cita -
OCR Scan
LG color tv Circuit Diagram schematics free transistor equivalent book 2sc RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A 3186J CA90245
Abstract: . ELECTRICAL CHARACTERISTICS (Ta = 25 c) PART NUMBER P A C K A G E OUTLINE SYM BO LS ICBO UPA 827 TF T S , DISSIPATION vs. AMBIENT TEM PERA TU R E C O L LE C T O R CU R R E N T vs. DC B A S E V O LTA G E CL E , a (°C) DC Base Voltage, V be (V) C O L LE C T O R C U R R EN T vs. EM ITTER V O LTA G E DC , IC AN A G E N T FOR NEC RF, M IC R O W AV E & O PTO E LE C T R O N IC S E M IC O N D U C TO R S , PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA827TF FEATURES -
OCR Scan
k 3531 transistor
Abstract: is to r (fT ) .8 G H z N P N C u rre n t G a , 2 5V P N P C u rre n t G a in (h FE) . P N P , .0 G H z .3.5dB C o lle c to r-to -C o lle c to r L e a k a g e , ).175°C M axim um Junction Tem perature (Plastic P a c k a g e ) .150°C M axim um Storage Tem perature R a n g e . -6 5 °C to 15 0 °C M axim um Lead Tem perature (S -
OCR Scan
HFA3006 ic 8705 am ta 8739 p 3096B 492E 499E a3128 A3128
Abstract: c) PA RT NUMBER P A C K A G E OUTLINE SYM BO LS ICBO Iebo hFE UPA 8 2 7 T F T S 06 UNITS HA HA , LEC T O R CU R R EN T v s. DC B A S E V O LTA G E £ CL i- < E C o 0 3 Q. (ft (ft , s. < E C Ö < D O o ü _ g ) ~6 O O O o 1 2 5 10 20 50 100 Collector to , K C A P A C IT A N C E v s. C O LLEC TO R TO B A S E V O LT A G E : = 1 MHz Noise Figure, NF(dB , CLASSIFICATION RANK Marking hFE FB R84 70 to 140 Value E X C L U S IV E N O R T H A M E R IC A N A G E -
OCR Scan
NEC 7815 nec 9531 transistor npn c 9013 LT 5242 lt 7209 ls 7432 IC pin configuration
Abstract: h 0.25(0.010) (g) b© 0.25(0.010) (m) c a© b(s) 0.10(0.004)" NOTES: 1. Symbols are defined in , Semiconductor Data Sheet Ultra High Frequency Transistor Arrays The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor , for maximum application flexibility. Monolithic construction ofthese transistor arrays provides close , October 1998 File Number 3076.10 Features â'¢ NPN Transistor (fT).8GHz â'¢ NPN -
OCR Scan
LA 7376 729E PNP monolithic Transistor Arrays 1320j complementary npn-pnp power transistors ba 9319 A3127 IS09000
Abstract: is a monolithic talking microcomputer that can memorize voice up to 22 seconds using MOSEL qualified , CURRENT BUFFER C out DRIVER DECODER BUZZER BUFFER Vout1 Vout2 & LOGICS IOB3,4 , could drive 8 ohm speaker with a transistor, Vout could drive buzzer directly. The voice content is stored up to 20 seconds at 6 KHz S.R. and can be separated up to 64 sections. 22 seconds at 5.51 KHz , Options mask option for either open or hold transistor on S port & M port mask option for either pull Mosel Vitelic
Original
6852 d TRANSISTOR SR 6852 U001T MSM9009 8011 display russian transistor A1 SEG1-25 PID219D 1DA00
Abstract: itter V o lta g e .8.0V V c b o C o lle ctor to , ase V o lta g e . 5.5V I q . C o lle ctor , herm al Inform ation T herm al R esistance (Typical. Note 1) 0 JA (°C /W ) SO IC P a c k a g e , M axim um Junctio n Tem perature (Plastic P a c k a g e ) . 1 50 °C M axim um Storage Tem perature R a n g e . -6 5 °C to 15 0 °C M axim um Lead Tem perature (S -
OCR Scan
3101-B csf 78-12 h3101 Harris HFA3101 5 GHz Gilbert cell array HFA3101 UPA101 FA3101B H3101B 3101B 825MH
Abstract: High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary , applications. · NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046 , application flexibility. Monolithic construction of these transistor arrays provides close electrical and , . . . . . . . . . . . . . . . . . . 50V · PNP Transistor (fT). . . . . . . . . . . . . . . . . . . Intersil
Original
HFA3096BZ HFA3127B HFA3096B HFA3046BZ HFA3046B 9012 npn details FN3076 TB389 MO-220VEED-2 ISO9000
Showing first 20 results.