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90122-0795 Molex Board Connector, 70 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey
90122-0791 Molex Board Connector, 62 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey
90122-0797 Molex Board Connector, 74 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey
90122-0793 Molex Board Connector, 66 Contact(s), 2 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey
90121-0129 Molex Board Connector, 9 Contact(s), 1 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey
90121-0767 Molex Board Connector, 7 Contact(s), 1 Row(s), Male, Right Angle, 0.1 inch Pitch, Solder Terminal, Black Insulator, Receptacle visit Digikey

Transistor+9012+G+22+C

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Tamb=25 C 0.4 -VCEsat ST 9012 10 3 Tamb=25o C f=20MHz 7 5 4 -Ic =10 -I B 3 , 2 2 5 10 3 mA -I C Base saturation voltage versus collector current ST 9012 V , ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor , Storage Temperature Range TS -55 to +150 O 1) 1) mW C C Valid provided that leads Semtech Electronics
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transistor c 9012 PNP 9012 BR 9012 9012 transistor 9012 pnp transistor transistor 9012 9013
Abstract: HN 9012 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications , groups, G and H, according to its DC current gain. As complementary type the NPN transistor HN 9013 is , . 00.55 TO-92 Plastic Package Weight approx. 0.18 g Dimensions in mm Absolute Maximum Ratings Symbol , provided that leads are kept at ambient temperature at a distance of 2 mm from case G S P FORM A , 9012 Characteristics at Tamb = 25 °C Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 1 V, -lc -
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transistor BR 9013 9012 pnp NPN 9012 9012 transistor BR 9012 9012 npn
Abstract: 9012 700 h FE 500 400 300 400 200 =2 Tam b -IC 5 C 300 100 70 200 , versus collector current V 0.5 MHz ST 9012 typical limits o at Tamb=25 C 0.4 ST 9012 , Base saturation voltage versus collector current ST 9012 V 2 typical limits o at Tamb=25 C , ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor Semtech Electronics
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Transistor 9012 G 9013 transistor pnp transistor npn c 9013 ST9012 data sheet transistor 9012 c 9012
Abstract: 18 0 67 085 1 5 008 0 5 10 1 150 220 1 5 19 2.5 10 22 32/ KM 9012 25 20 500 64 350 500 18 07 0 85 , Amp. kmhom or KM90I5 Output KM 9012 KM 9013 SP. , , AM CONVERTER to-92a à EBC KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 , DEVICE SPECIFICATIONS [Ta - 25°C unless otherwise specified ] MAXIMUM RATINGS ELECTRICAL , (VI (VI (VI I m W ) min max (nA) max VCB (v> lv) «VP max ic (mA) VCE (v) (v) typ max -
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CP1005 9011 9012 9013 9014 9018 C 9014 transistor 9011 NPN transistor 9011 transistor transistor 9014 C npn KM90II KM901I/8 KM90II/8 KM90I4 KM9015 KM90I
Abstract: ST 9012 10 3 -VCE=5V fT 1V 10 2 7 0.2 5 4 3 o 25 C 0.1 2 o , 9012 V 2 typical limits o at Tamb=25 C -Ic =10 -I B -VBEsat 1 o -50 C o 25 , ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor , Storage Temperature Range TS -55 to +150 O 1) 1) mW C C Valid provided that leads Semtech Electronics
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transistor 9013 H NPN transistor s 9012 9012 NPN Output Transistor br 9013 transistor 9012 c
Abstract: 9012 700 h FE 500 400 300 400 200 =2 Tam b -IC 5 C 300 100 70 200 , versus collector current V 0.5 MHz ST 9012 typical limits o at Tamb=25 C 0.4 Tamb=25o C f=20MHz 7 5 4 -Ic =10 -I B 3 2 0.3 -VCEsat ST 9012 10 3 -VCE=5V , -I C Base saturation voltage versus collector current ST 9012 V 2 typical limits o at , ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Semtech Electronics
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NPN SILICON TRANSISTOR 9013 transistors equivalent 9012 9013 transistor datasheet transistor 9013 C 9013 9012 transistor datasheet
Abstract: 150 220 1 5 19 2.5 10 22 3 CL 9012 25 20 5 500 64 350 500 18 0.7 0.85 10 1 02 0£ 250 25 CL , RG = 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS -^(jiROUP TYPE A B C D E F G H 1 @ IC / VCE , TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER , [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS , (dB) tYP InA) max VCB (v) (v) typ max ic vCE (mA) (v) (v) typ max 'c 'B (mA) (mA) (MHz) min typ -
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transistor c 9018 Transistor CL 100 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor
Abstract: 150 220 1 5 19 2.5 10 22 3 2/ CL 9012 25 20 5 500 64 350 500 18 0.7 0.85 10 1 0.2 0£ 250 25 , 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS TYPE A B C D E F G H 1 @ IC / VCE CL9 011 CL 9016 CL , -92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER CL 9015 PNP AUDIO DRIVER CL 9016 NPN FM RF E Cl â'ž 0 o CL 9018 NPN AM/FM IF, FM CONVERTER C , SPECIFICATIONS [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS -
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npn 9016 transistor F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013 transistor 9015 c CL9000
Abstract: ADC-9012 CMOS MICROPROCESSOR-COMPATIBLE 12-BIT A/D CONVERTER P r e c i s i o n M o n o l i t h i c * Inc. PRELIMINARY FEATURES GENERAL DESCRIPTION â'¢ Low Cost â'¢ 12-Bit Accurate  , . FOR ABSOLUTE ACCURACY C IRCUITS. 12-40 10/87, Rev. B ADC-9012 CMOS MICROPROCESSOR-COMPATIBLE , 85mW Power Consumption â'¢ Space Saving 24-Pin 0.3" DIP, or 24-Lead SOL The ADC-9012 is a , . The accuracy of the ADC-9012 results from the addition of precision bipolar transistors in PMIâ'™s -
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ADC9012BW 9012 transistor pin diagram ADC-9012H cs 9012 transistor ADC-9012 TMS32020
Abstract: ^-GROUP TYPE A B C D E F G H 1 @ IC ! VC KM 9011 KM 9016 KM 9018 - 28 - 45 39 - 60 54-80 72-108 97 - , CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO , \ > KM 9011 KM 3016 KM 9018 0.1 1 10 lc ( mA-) 100 DEVICE SPECIFICATIONS [TA - 25°C unless , (v) |v) typ max 'C VCE (mA) (v) (v) typ max >c "b (mA) (mA) ( MHz) min typ 'C VCE (m A) (v) (PF) typ max VCB (v) KM 9011 25 20 3 300 28 198 50 18 0 67 0 85 1 5 008 0 5 10 1 150 220 1 5 19 2.5 10 22 KM -
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9014 ch transistor npn c 9014 100-10L 9018 9013 pnp Transistor 9012 G 22 C
Abstract: www.unisonic.com.tw G 112-166 H 144-202 I 190-300 2 of 3 QW-R201-029.B 9012 PNP SILICON , UNISONIC TECHNOLOGIES CO., LTD 9012 PNP SILICON EPITAXIAL TRANSISTOR 1W OUTPUT AMPLIFIER OF , -x-T92-B 9012L-x-T92-K 9012G-x-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector  Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk MARKING , ., LTD 1 of 3 QW-R201-029.B 9012  PNP SILICON EPITAXIAL TRANSISTOR ABSOLUTE MAXIMUM Unisonic Technologies
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9012L- 9012G-
Abstract: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B , ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT , Collector dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C , G 112-166 UNISONIC TECHNOLOGIES H 144-202 I 190-300 CO., LTD. 1 QW-R201-029,A UTC 9012 UTC PNP EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD. 2 Unisonic Technologies
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Abstract: ST 9012 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications , three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor , Parameter DC Current Gain at -VCE = 1 V, -IC = 50 mA Current Gain Group G H I at -VCE = 1 V, -IC = 500 , -VCE = 1 V, -IC = 100 mA Gain Bandwidth Product at -VCE = 6 V, -IC = 20 mA C C Symbol Min , 9012 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company Semtech Electronics
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Transistor-9013 h Transistor 9013 data sheet NPN 9013 9013 npn transistor transistor c 9013 9013 npn
Abstract: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B , ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Ic Pc Tj TSTG -40 -20 -5 -500 625 150 -55 ~ +150 V V V mA mW °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C Unisonic Technologies
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UTC 9013 PDF IC 9012 500ma 40v pnp 9012pnp utc 9012
Abstract: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B , ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT , Collector dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25°C , G 112-166 UNISONIC TECHNOLOGIES H 144-202 I 190-300 CO., LTD. 1 QW-R201-029,A UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures Unisonic Technologies
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Abstract: Temperature Symbol V CES Limit 50 3.5 22 0.4 200 - 6 5 t o +150 Unit Vdc Vdc Vdc Ade °C °C Vebo , Voltage (lc = 1.0 mA) Collector-Emitter Breakdown Voltage (lc = 10 mA) Collector Cutoff Current (V C B - 2 8 V ) V (B R )C E S Symbol Min Typ Max Unit 50 3.5 45 22 - - - - - - , RF Tactical Marketing in Phoenix, AZ. M RF3095 · · · 9.0-12 dB 1.55-1.65 GHz 0.5-1.6 WATTS , Symbol Rejc Max 35 Unit °C/W REV 9 MRF3095 4.2-582 MOTOROLA WIRELESS SEMICONDUCTOR -
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Abstract: ) C om m unication/Signal Intelligence G EN ER A L D E SC R IP T IO N T h e A D 9012 is an 8 , T e c h n o lo g y W a y , P.O. B o x 9106, N o r w o o d ,M A 02 062-9106, U.S.A. Tel: 7 8 1 /3 2 9 -4 7 0 0 W o rld W id e W e b Site: h ttp ://w w w .a n a lo g .c o m Fax: 7 8 1 /3 2 6 -8 7 0 3 , .-V s to +0.5 V E N C O D E Input V o lta g e .-0 .5 V to +5 , 9012SE /SQ /T E /T Q . -55°C to +125°C Storage T em perature R a n g e -
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MIL-STD-883 AD9012 J-28A
Abstract: thyristor Itrms Itavm Tc = 85°C A MCC 90-06 lo 1 MCC 90-08 io 1 MCC 90-12 go 1 MCC 90-12 ho 1 MCC 90-12 io 1 , 90-08 io 8 MCC 90-12 go 8 MCC 90-12 ho 8 MCC 90-12 io 8 MCC 90-14 ho 8 MCC 90-14 io 8 MCC 90-15 io 8 MCC 90-16 ho 8 MCC 90-16 io 8 MCC 90-06 im 8 MCC 90-12 im 8 9 V Nr. E 72873 (M) MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC À MCC ¿ MCC À MCC ¿ MCC À MCC À MCC ¿M CC MCC ¿M CC ¿M CC ¿MCC ¿M CC ¿M CC ¿M CC ¿M C C ¿M C C 130-06 130-08 130-12 130-14 130-16 160-06 160-08 160-12 160-14 160-16 165-06 165-06 165-08 -
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mcc 90-12 MCC 90-16 mcc 250 thyristor abb mcc 90-12 ABB thyristor modules MCC 65 MCC 90-06 io 8 K21-0120 K21-0180 K21-0180A K21-0265 K41-0150 K41-0150C
Abstract: -BIT SHIFT RE6ISTERS B U L L E T I N N O . D L-S 761 13 76 , O C T O B E R 1976 SN 5 4 1 6 6 , S N 5 4 L S 1 6 6 . . . J O R W P A C K A G E SN 7 41 65 , S N 7 4 L S 1 6 5 . . . J O R N P A C K A G E , L M A X IM U M TYPE '165 'L S 1 6 6 CLO C K FREQ U EN CY 26 MHz 35 MHz T Y P IC A L P O W ER D IS S IP A T IO N 2 10 mW 105 mW V g c INMIWT ' 0 wum uLmm , sERMLOumrr C B A INPUT CM J T U « lJ , m IN C O R P O R A T E D P O S T O F F IC E B O X 9012 · ents D A L L A S . T E X A S 75222 -
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SN74LS165 74LS186 74ls186*- 54ls166 IC 74165 74165 block diagram SN5416S SN54LS165 SN74165 LS165 SN54165
Abstract: (Marking Side) 3 4 5 6 7 8 g 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 A 9 Ae A l9 WE RESET , Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. MBM29LV160T-90-12/MBM29LV160B-90-12 , . \ d g i r ^ .\ . T Marking Side (FPT , byte/word at a time using the EPROM programming mechanism of hot electron injection. MBM29LV160T-90-12/MBM29LV160B-90-12 FLEXIBLE SECTOR-ERASE ARCHITECTURE · · · · One 8K word, two 4K words, one 16K word, and -
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9012 3CH 29LV160 B-90/-12 60T-90/-12/MB F9802
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