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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL9012IRCCZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy
ISL9012IRGCZ Intersil Corporation Dual LDO with Low Noise, Low IQ, and High PSRR; DFN10; Temp Range: -40° to 85°C visit Intersil Buy

Transistor 9012 G 22 C

Catalog Datasheet MFG & Type PDF Document Tags

CP1005

Abstract: 9011 9012 9013 9014 9018 18 0 67 085 1 5 008 0 5 10 1 150 220 1 5 19 2.5 10 22 32/ KM 9012 25 20 500 64 350 500 18 07 0 85 ,  V7*. KM 9000 SERIES AM FM RADIO TRANSISTOR KIT SELECT ION GUIDE FOR AM FM RADIO TRANSISTOR KIT AM RECEIVER FM RECEIVER W FM RF KM 9016 Conv. IF) IF 2 KM90II KM 90H KM 9011 AF Amp. kmhom or KM90I5 Output KM 9012 KM 9013 SP. , , AM CONVERTER to-92a à EBC KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014
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CP1005 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor KM901I/8 KM90II/8 KM90I4 KM9015 KM90I

transistor c 9018

Abstract: Transistor CL 100 150 220 1 5 19 2.5 10 22 3 CL 9012 25 20 5 500 64 350 500 18 0.7 0.85 10 1 02 0£ 250 25 CL , RG = 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS -^(jiROUP TYPE A B C D E F G H 1 @ IC / VCE , r-t-1 fr AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER , [Ta = 25°C unless otherwise specified] TYPE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS
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transistor c 9018 Transistor CL 100 transistor 9013 NPN audio output transistor 9014 NPN 9016 transistor V. 9014 c

9011 9012 9013 9014 9018

Abstract: 9011 NPN transistor 150 220 1 5 19 2.5 10 22 3 2/ CL 9012 25 20 5 500 64 350 500 18 0.7 0.85 10 1 0.2 0£ 250 25 , 50fi f = 100 MHz CLASSIFICATION OF HFE GROUPS TYPE A B C D E F G H 1 @ IC / VCE CL9 011 CL 9016 CL , s Lì >J à .-« j&lA CL9000 SERIES AM FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM/FM RADIO TRANSISTOR KIT Oulput TYPE POLARITY APPLICATIONS CASE CL 9011 NPN AM/FM IF, AM CONVERTER T0-92B CL 9012 PNP AUDIO POWER OUTPUT CL 9013 NPN AUDIO POWER OUTPUT i CL 9014 NPN AUDIO DRIVER
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npn 9016 transistor F 9016 transistor 9018 transistor pnp transistor 9015 NPN 9013 transistor 9015 c

ADC9012BW

Abstract: cs 9012 transistor ADC-9012 CMOS MICROPROCESSOR-COMPATIBLE 12-BIT A/D CONVERTER P r e c i s i o n M o n o l i t h i c * Inc. PRELIMINARY FEATURES GENERAL DESCRIPTION â'¢ Low Cost â'¢ 12-Bit Accurate  , . FOR ABSOLUTE ACCURACY C IRCUITS. 12-40 10/87, Rev. B ADC-9012 CMOS MICROPROCESSOR-COMPATIBLE , 85mW Power Consumption â'¢ Space Saving 24-Pin 0.3" DIP, or 24-Lead SOL The ADC-9012 is a , converter built with a high accuracy D/A converter, a precision bipolar transistor high-speed comparator
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ADC9012BW cs 9012 transistor 9012 9012 transistor pin diagram ADC-9012H ADC-9012 TMS32020

9014 ch

Abstract: transistor npn c 9014 ^-GROUP TYPE A B C D E F G H 1 @ IC ! VC KM 9011 KM 9016 KM 9018 - 28 - 45 39 - 60 54-80 72-108 97 - , Vi4». ¡;-i\> V IliÌ Vi- i m B bJ ;7*y V7l_l IlkaW AM. FM RADIO TRANSISTOR KIT SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT TYPE POLARITY APPLICATIONS CASE KM 9011 NPN AM/FM IF, AM CONVERTER TO-92A à E6C KM 9012 PNP AUDIO POWER OUTPUT KM 9013 NPN AUDIO POWER OUTPUT KM 9014 NPN AUDIO , \ > KM 9011 KM 3016 KM 9018 0.1 1 10 lc ( mA-) 100 DEVICE SPECIFICATIONS [TA - 25°C unless
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9014 ch transistor npn c 9014 100-10L 9018 Transistor-9013 h 9011
Abstract: Temperature Symbol V CES Limit 50 3.5 22 0.4 200 - 6 5 t o +150 Unit Vdc Vdc Vdc Ade °C °C Vebo , 2 8 V ) V (B R )C E S Symbol Min Typ Max Unit 50 3.5 45 22 - - - - - - , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Pow er Transistor , RF Tactical Marketing in Phoenix, AZ. M RF3095 · · · 9.0-12 dB 1.55-1.65 GHz 0.5-1.6 WATTS MICROWAVE LINEAR POWER TRANSISTOR CASE 328A-03, STYLE 2 MAXIMUM RATINGS Rating Collector Base Voltage -
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MRF3095

74LS186

Abstract: SN74LS165 -BIT SHIFT RE6ISTERS B U L L E T I N N O . D L-S 761 13 76 , O C T O B E R 1976 SN 5 4 1 6 6 , S N 5 4 L S 1 6 6 . . . J O R W P A C K A G E SN 7 41 65 , S N 7 4 L S 1 6 5 . . . J O R N P A C K A G E , L M A X IM U M TYPE '165 'L S 1 6 6 CLO C K FREQ U EN CY 26 MHz 35 MHz T Y P IC A L P O W ER D IS S IP A T IO N 2 10 mW 105 mW V g c INMIWT ' 0 wum uLmm , sERMLOumrr C B A INPUT CM J T U « lJ , m IN C O R P O R A T E D P O S T O F F IC E B O X 9012 · ents D A L L A S . T E X A S 75222
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SN74LS165 74LS186 54ls166 IC 74165 74165 block diagram transistor c 9012 SN5416S SN54LS165 SN74165 LS165 SN54165

2SK425

Abstract: NEC 2SK425 VOLTAGE ORA IN CURRENT â'¢Ji g c\ > ' ! . â'¢ y - L or 0 1 0.2 0.5 1 0 2 0 5.0 10 20 5û 100 Kl -f , ö /I? % con- junction Field Effect Transistor 2SK425 Nf1^ lJ =i h i&jammmm N-Channel Silicon Junction Field Effect Transistor Audio Frequency Amplifier ^/feature i |. rj High gm vrj 1 , 150 *c * V Osi k#1 â'"o O o 4 I , ^ § W: r ^ 1 ss VI)S = 10 V, Vcs = 0, f = 1.0 MHz 13 pF irti ÌS fi M! c ^ r ss VDS-10 V. V(jS =
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NEC 2SK425 N-Channel Silicon Junction Field Effect Transistor S-10 X17 marking SX50V 4511B1 TC-5700A 092J7I3

3N81

Abstract: IN4148 anode cathode GATE) â'"c:_ FIG. 2 G IDENTIFIES GATE SYMBOLS. LAST LETTER (A OR C) MAY BE DROPPED IF NO AMBIGUITY , 25°C 2.0 2.0 V max 22, 23, 25 TRIGGERING CHARACTERISTICS Cathode Gate Current to Trigger , Blocking Voltage dv/dt max @ 25°C See Note 5 V/Vs max NOTE 3: The transistor characterization is , ) If Peak Recurrent Forward Current @ iooc, 10 iis, 1% duty cycle (A) Pr Dissipation (mW) Tc , .02 7.5 8.2 300 1.0 3.5 1.0 300 200 3.5 16 c 2N4983 2N4984 2N4985 2N4986 33 30 30
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2N4987 2N4988 2N4989 2N4990 3N81 IN4148 anode cathode 3N84 eto thyristor thyristor igc 2N499

3D24N2Y

Abstract: 9008 transistor S e ite 4 , 14-16/84 5. Leiterplatte 5 .1 . B e s tü c lc u n g s s e ite 5.2. Leiterbildseite , Elektrolytkondensator 4,7/63 TGL 38928 C 1042 Elektrolytkondensator 22/25 TGL 38928 C 1043 Elektrolytkondensator 2,2/80 , -120/20-63 TGL 35780 C 1047 Elektrolytkondensator 4,7/63 TGL 38928 VT 1001 Transistor SC 239 P TGL 27147 VT , 1010 Transistor sc 236 D TGL 27147 VT 1011 Transistor sc 236 C TGL 27147 VT 1012 Transistor sc 308 E , Volt * + Mimis an Masse 5 ·· + 50° C 10 kHz (Fe20^-Band) 1,6 A 80 Hz Frequenzbereich
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3D24N2Y 9008 transistor transistor sc 238 transistor sc 308 SAL 41 transistor 9013 EDVU-Z-47/50-63 EDUU-N1500-120/20-63

4733 PNP

Abstract: Resistance (Typical, Note 1) Operating Information 0 j/ \ (°C /W ) 14 Ld SOIC P a c k a g e . 120 16 Ld SOIC P a c k a g e . 115 M , Package) . 150°C M aximum Storage Temperature R a n g e . -65°C to , Tips Only) Temperature R a n g e . -55°C , GHz lc = 10mA, V c e = 5V - 6 - - 2.5 - GHz Power G ain-Bandwidth Product
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4733 PNP HFA3046 HFA3096 HFA3127 HFA3128 1-800-4-HARRIS

9013 npn transistor pin view

Abstract: NEC 14324 PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ · HIGH GAIN WITH LOW OPERATING CURRENT: IS 2 1 EI2 = 9 dB T Y P a t f = 2 G H z, V ce = 2 V, Ic = 7 mA ISsieI2 = 8 .5 dB T Y P at f = 2 G H z, V ce = 1 V, Ic = 5 mA UPA827TF PACKAGE DRAWING , . ELECTRICAL CHARACTERISTICS (T a = 2 5 ° c ) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO Iebo hFE fT fT , , Emitter Cutoff Current at V eb = 1 V , DC Current Gain1 at V c e = 2 V , Ic Ic Ie =0 M -A HA 70
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9013 npn transistor pin view NEC 14324 15251 pin configuration of 7496 IC hfe 4538 ic ma 4810 UPA827TF-T1

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The Transistor and Diode Data Book for Design Engineers Texas Instruments INCORPORATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY TRANSISTOR DATA SHEETS TRANSISTOR CHIP CHARACTERIZATION TRANSISTOR QUALITY AND RELIABILITY INFORMATION DIODE PRODUCT SPECTRUM DIODE SELECTION GUIDES DIODE , : Elina. A I C. Bldg. Suite 202 . 7615 Metro Blvd. Edina. MN55435. (612)835-2900. MISSOURI: Kaalaa Cita
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LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 3186J CA90245

UPA827TF

Abstract: k 3531 transistor . ELECTRICAL CHARACTERISTICS (Ta = 25 c) PART NUMBER P A C K A G E OUTLINE SYM BO LS ICBO UPA 827 TF T S , DISSIPATION vs. AMBIENT TEM PERA TU R E C O L LE C T O R CU R R E N T vs. DC B A S E V O LTA G E CL E , a (°C) DC Base Voltage, V be (V) C O L LE C T O R C U R R EN T vs. EM ITTER V O LTA G E DC , IC AN A G E N T FOR NEC RF, M IC R O W AV E & O PTO E LE C T R O N IC S E M IC O N D U C TO R S , PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA827TF FEATURES
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k 3531 transistor

ta 8739 p

Abstract: ic 8705 am is to r (fT ) .8 G H z N P N C u rre n t G a , 2 5V P N P C u rre n t G a in (h FE) . P N P , .0 G H z .3.5dB C o lle c to r-to -C o lle c to r L e a k a g e , ).175°C M axim um Junction Tem perature (Plastic P a c k a g e ) .150°C M axim um Storage Tem perature R a n g e . -6 5 °C to 15 0 °C M axim um Lead Tem perature (S
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HFA3006 ta 8739 p ic 8705 am a3128 Ic 9430 492E A3128

NEC 7815

Abstract: nec 9531 c) PA RT NUMBER P A C K A G E OUTLINE SYM BO LS ICBO Iebo hFE UPA 8 2 7 T F T S 06 UNITS HA HA , LEC T O R CU R R EN T v s. DC B A S E V O LTA G E £ CL i- < E C o 0 3 Q. (ft (ft , s. < E C Ö < D O o ü _ g ) ~6 O O O o 1 2 5 10 20 50 100 Collector to , K C A P A C IT A N C E v s. C O LLEC TO R TO B A S E V O LT A G E : = 1 MHz Noise Figure, NF(dB , CLASSIFICATION RANK Marking hFE FB R84 70 to 140 Value E X C L U S IV E N O R T H A M E R IC A N A G E
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NEC 7815 nec 9531 transistor npn c 9013 LT 5242 OF IC 7448 lt 7209

LA 7376

Abstract: 729E h 0.25(0.010) (g) b© 0.25(0.010) (m) c a© b(s) 0.10(0.004)" NOTES: 1. Symbols are defined in , Semiconductor Data Sheet Ultra High Frequency Transistor Arrays The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Harris Semiconductor , for maximum application flexibility. Monolithic construction ofthese transistor arrays provides close , October 1998 File Number 3076.10 Features â'¢ NPN Transistor (fT).8GHz â'¢ NPN
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LA 7376 729E ba 9319 PNP monolithic Transistor Arrays TRANSISTOR 7812 1320j A3127 IS09000

6852 d TRANSISTOR

Abstract: U001T is a monolithic talking microcomputer that can memorize voice up to 22 seconds using MOSEL qualified , CURRENT BUFFER C out DRIVER DECODER BUZZER BUFFER Vout1 Vout2 & LOGICS IOB3,4 , could drive 8 ohm speaker with a transistor, Vout could drive buzzer directly. The voice content is stored up to 20 seconds at 6 KHz S.R. and can be separated up to 64 sections. 22 seconds at 5.51 KHz , Options mask option for either open or hold transistor on S port & M port mask option for either pull
Mosel Vitelic
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6852 d TRANSISTOR U001T SR 6852 MSM9009 8011 display russian transistor A1 SEG1-25 PID219D 1DA00

Harris HFA3101 5 GHz Gilbert cell array

Abstract: csf 78-12 itter V o lta g e .8.0V V c b o C o lle ctor to , ase V o lta g e . 5.5V I q . C o lle ctor , herm al Inform ation T herm al R esistance (Typical. Note 1) 0 JA (°C /W ) SO IC P a c k a g e , M axim um Junctio n Tem perature (Plastic P a c k a g e ) . 1 50 °C M axim um Storage Tem perature R a n g e . -6 5 °C to 15 0 °C M axim um Lead Tem perature (S
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Harris HFA3101 5 GHz Gilbert cell array csf 78-12 3101-B h3101 HFA3101 UPA101 FA3101B H3101B 3101B 825MH

pin configuration NPN transistor 9012 PNP

Abstract: HFA3096BZ High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation's complementary , applications. · NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046 , application flexibility. Monolithic construction of these transistor arrays provides close electrical and , . . . . . . . . . . . . . . . . . . 50V · PNP Transistor (fT). . . . . . . . . . . . . . . . . . .
Intersil
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pin configuration NPN transistor 9012 PNP HFA3096BZ 9012 npn details HFA3046B HFA3046BZ HFA3096B FN3076 TB389 MO-220VEED-2 ISO9000
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