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Part Manufacturer Description Datasheet BUY
LTC2246HLU Linear Technology IC 1-CH 14-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQFP32, 5 X 5 MM, PLASTIC, MS-026, TQFP-32, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices
LTC2246IUH#TR Linear Technology IC 1-CH 14-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQCC32, 5 X 5 MM, PLASTIC, MO-220WHHD-X, QFN-32, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices
LTC2246CUH#TR Linear Technology IC 1-CH 14-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQCC32, 5 X 5 MM, PLASTIC, MO-220WHHD-X, QFN-32, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices
LTC2246HLX#PBF Linear Technology LTC2246H - 14-Bit, 25Msps 125°C ADC In LQFP; Package: LQFP; Pins: 48; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTC2246HLU#TRPBF Linear Technology IC 1-CH 14-BIT PROPRIETARY METHOD ADC, PARALLEL ACCESS, PQFP32, 5 X 5 MM, LEAD FREE, PLASTIC, MS-026, TQFP-32, Analog to Digital Converter visit Linear Technology - Now Part of Analog Devices
LTC2246IUH#PBF Linear Technology LTC2246 - 14-Bit, 25Msps Low Power 3V ADCs; Package: QFN; Pins: 32; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Transistor TT 2246

Catalog Datasheet MFG & Type PDF Document Tags

Transistor TT 2246

Abstract: TT 2246 transistor - 5- FOR USE BY ELECTRICIANS OVERSEAS : HBrhSliSIXSIftlSK (New Transistor Manual) lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a ,   ti: f, m lì m a U k ¡E tí {Ta = 25'Cl % « iti fï tt (T. - 25'C) H- K « à , 100W T- Ã;T 150 1 mA 450 >10 5 4 A ton< 1 flS, t¡= 1 /zS />is< 2 n S 102 :< 2246 H a « 450 , . - 9 W (/-900MHz, V'cf:-18V, P- 4 W) 159 H 2254 II » 45 3.5 4 A 40W (Tt=25'C) 175 800 20 50
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Transistor TT 2246

Abstract: PHILIPS/DISCRETE PNP 4 GHz wideband transistor FEATURES BFG55 PINNING â'¢ High output , collector emitter DESCRIPTION PNP planar epitaxial transistor mounted in a plastic SOT223 envelope , wideband transistor Product specification b7E D BFG55 TH ER M AL RESISTANCE SYM BOL ^ j-s th , Philips Semiconductors N AMER PHILIPS/DISCRETE PNP 4 GHz wideband transistor Plot Product , APIER PHILIPS/DISCRETE Product specification b?E D PNP 4 GHz wideband transistor MBB340
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Transistor TT 2246 S8002 BFG35

Horizontal Transistor TT 2246

Abstract: Transistor TT 2246 loops and in some cases cause transistor failures. The TTL monitor has provisions at the printed circuit , stage for the monitor. Refer to figure 3-1 and schematic at rear of manual. Transistor Q103 and its , . R118 and R119 provide series feedback which makes the voltage gain relatively independent of transistor , VERTICAL DEFLECTION AMPLIFIER Transistor Q101 is a programmable unijunction transistor and with its , Q1 uses a power type transistor operating as a class B amplifier. The output is transformer coupled
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Horizontal Transistor TT 2246 CRT Monitor repair schematic circuit diagram of crt monitor yoke coil hv flyback transformer In400I Diode IN5398 55164-TELEPHONE IM1017 IN5398 TTH5/93 I-024-OS45 TV-15

Transistor TT 2246

Abstract: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT , Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally , 0.91 1.00 1.08 1.19 1.31 1.38 1.42 1.38 1.63 G m ax1 1 ' dB 25.46 22.46 19.50 17.77 , ICKN ESS C Tt 5.4 ± 0.10 0.062 ± 0.001 DISTANCE CAVITY TO PERFO RATION (WIDTH , : 1-800-235-0312 or 408-654-8675 F a r E ast/A u stra la sia : (65) 290-6305 CA R R IER TA P E W Tt (CO
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ATF-36163 5964-4069E 5965-4747E

Transistor TT 2246

Abstract: TT 2246 transistor Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched for minimum , 1.31 1.38 1.42 1.38 1.63 Gmax[1] dB 25.46 22.46 19.50 17.77 16.61 15.67 14.98 14.38 13.96 13.50 13.10 , THICKNESS) Tt (COVER TAPE THICKNESS) 10° MAX. K0 10° MAX. A0 B0 DESCRIPTION CAVITY LENGTH , D P0 E W t1 C Tt F P2 SIZE (mm) 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 1.55
Agilent Technologies
Original
TT 2246 transistor 5989-1915EN

marking CODE GA sot363

Abstract: atf 36163 Low Noise Amplifier ATF-36163 1.5 ­18 GHz Surface Mount Pseudomorphic HEMT Data Sheet Description Features The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the , 22.46 19.50 17.77 16.61 15.67 14.98 14.38 13.96 13.50 13.10 12.52 10.82 9.85 9.24 9.07 , TAPE THICKNESS) K0 10° MAX. A0 DESCRIPTION Tt (COVER TAPE THICKNESS) 10° MAX. B0 , 0.0008 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004
Avago Technologies
Original
marking CODE GA sot363 atf 36163 Low Noise Amplifier HEMT marking P A004R marking 34 sot-363 rf MGA-86563 AV02-1441EN

Transistor TT 2246

Abstract: 4747E lownoise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When , Gmax[1] dB 25.46 22.46 19.50 17.77 16.61 15.67 14.98 14.38 13.96 13.50 13.10 12.52 10.82 , THICKNESS) Tt (COVER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 5° MAX. B0 SYMBOL , COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ±
Agilent Technologies
Original
ATF-36163-TR1 ATF-36163-BLK 4747E

Transistor TT 2246

Abstract: A004R ATF-36163 1.5 ­18 GHz Surface Mount Pseudomorphic HEMT Data Sheet Description Features The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the , Gmax[1] dB 25.46 22.46 19.50 17.77 16.61 15.67 14.98 14.38 13.96 13.50 13.10 12.52 10.82 , Orientation For Outline 63 P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER , WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004
Avago Technologies
Original

Transistor TT 2246

Abstract: 4747E Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched for minimum noise , Gmax[1] dB 25.46 22.46 19.50 17.77 16.61 15.67 14.98 14.38 13.96 13.50 13.10 12.52 10.82 , (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 5° MAX , ± 0.0005 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ±
Hewlett-Packard
Original
Gm 3842

Transistor TT 2246

Abstract: transistor chn 911 output/AutoDUPLEX enable input. This pin consists of an pen drain output transistor with a resistor , Output and Link Disable Input. This pin consists of an open drain output transistor with a resistor , output transistor wilh a resistor pullup. To force the device into the Full Duplex Mode, tie this pin to , pin consists of an open drain output transistor with a resistor pullup. If the pin is tied to GND, the , output transistor with a resistor pullup. If the pin is tied to GND, the pin is configured as an input
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transistor chn 911 pulse electronics era transformer jm31a chn 809 transistor chn 037 S4744 83C96 10BASE-T 10BASET

l0746

Abstract: Transistor TT 2246 70.1 50.6 36.8 24.4 11.3 -5.2 -20.8 -35.0 -45.8 -56.1 -68.4 34.88 27.84 25.13 24.59 22.46 21.05 20.71 , transistor. Instead of a 0.7V base to emitter voltage, the ATF-54143 enhancement mode PHEMT requires about a , transistor based on desired Vds and Ids through resistor R4 to be 3.6V. Equation (2) calculates the value of , . R7 is used as a "keepalive" resistor for the PNP transistor. Without R7, the collector current flowing through the PNP transistor is hardly enough to turn the transistor on. R2 = (Vds ­ Vgs) R1
Agilent Technologies
Original
l0746 marking 4F sot-343 LNA MARKING 4F R11450 RD40 transistor c011 5988-0450EN

chn 809

Abstract: chn 809 ST enable Input. This pin consists of an open drain output transistor with a resistor pullup. To enable the , consists of an open drain output transistor with a resistor pullup. To disable the link test function, tie , output and STP mode input. This pin consists of an open drain output transistor with a resistor pullup , consists of an open drain output transistor with a resistor pullup. To disable the Autopolarity function , consists of an open drain output transistor with a resistor pullup . To force the device into the Full
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chn 809 ST MO40 pin diagram of BC 547 capacitor JA8 SABRE 408 KMA Series 232 83C95

5964-4069E

Abstract: sia 2297 Electron Mobility Transistor (PHEMT), in the SOT-363 (SC-70) package. When optimally matched to the minimum , 158 -32.04 0.03 71 0.55 -18 0.16 22.46 2 0.96 -42 12.69 4.31 138 -26.38 0.05 56 0.53 -35 0.24 19.50 , ±0.0005 COVER TAPE WIDTH C 5.4 ±0.10 0.205 ± 0.004 TAPE THICKNESS Tt 0.062 ± 0.001 0.0025 ± 0.00004
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sia 2297 tt 95 n 12 pseudomorphic HEMT ATF36163 ST Z0 103 MA marking BOJ

SN 74 868

Abstract: Z0502 Hewlett-PackardATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC , 1.00 1.08 1.19 1.31 1.38 1.42 1.38 1.63 Gmaxl1! dB 25.46 22.46 19.50 17.77 16.61 15.67 14.98 14.38 , D Po E W tl c Tt F P2 S IZ E (mm) 2.24 2.34 1.22 4.00 1.00 + + + + + 0.10 0.10 0.10 0.10 0.25 S IZ E
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SN 74 868 Z0502

hewlett packard atf 36163 phemt

Abstract: marking DN SOT-363 ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor (PHEMT), in the SOT-363 (SC , 1.38 1.42 1.38 1.63 GmaxIH dB 25.46 22.46 19.50 17.77 16.61 15.67 14.98 14.38 13.96 13.50 13.10 , Ko P D1 D Po E W tl C Tt F P2 SIZE (mm) 2.24 + 0.10 2.34 + 0.10 1.22 ±0.10 4.00 + 0.10 1.00 + 0.25
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hewlett packard atf 36163 phemt marking DN SOT-363 MMM75

ATF-54143 application notes

Abstract: Curtice -68.4 34.88 27.84 25.13 24.59 22.46 21.05 20.71 19.34 18.15 16.17 14.64 13.36 12.29 , bipolar junction transistor. Instead of a 0.7 V base to emitter voltage, the ATF-54143 enhancement mode , mode device are very similar to those used to bias a bipolar junction transistor. C7 Vdd R7 , shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2 , Equation (1) calculates the required voltage at the emitter of the PNP transistor based on desired Vds
Agilent Technologies
Original
ATF-54143 application notes Curtice PHEMT marking code a transistor C013 transistor 4F LNA SOT c5 87 5988-2722EN 5988-6275EN

Transistor TT 2246

Abstract: single-supply wein bridge oscillator single supply applications. A complementary symmetry MOS (CMOS) transistor pair, capa ble of swinging the , transistor (011). O ffset nulling, when desired, can be effected by connecting a 100,000 ohm potentiom eter , am plifier stage, consisting o f bipolar transistor Q tl and its cascode-connected load resistance , 2k ft resistor connected between the base and collector o f transistor Q11. These internal components , , and PMOS transistor 0 1 . A tap a t the junction of resistor R1 and diode D4 provides a gate bias
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CA5160 single-supply wein bridge oscillator picoammeter schematic diagram CA5160AE staircase generator Wien Bridge Oscillator opamp CA516QA CA5130 1N914 CA3600 CA3600E

l0746

Abstract: Curtice -68.4 34.88 27.84 25.13 24.59 22.46 21.05 20.71 19.34 18.15 16.17 14.64 13.36 12.29 , bipolar junction transistor. Instead of a 0.7 V base to emitter voltage, the ATF-54143 enhancement mode , mode device are very similar to those used to bias a bipolar junction transistor. C7 Vdd R7 , shown in Figure 2. R1 and R2 provide a constant voltage source at the base of a PNP transistor at Q2 , Equation (1) calculates the required voltage at the emitter of the PNP transistor based on desired Vds
Agilent Technologies
Original
ATF-54143-TR1 ATF-54143-TR2 RHO marking sot 23 marking code R4 transistor datasheet s parameters noise ATF-54143-BLK

germanium

Abstract: KPL 3009 J J field-effect transistor ^ m J transistor l MOS field-effect transistor / Type num ber , * A raw material germanium B raw material silicon second letter C transistor for applications in AF range (Rlh >15° C/W) JC D power transistor for applications in AF range (FtlhJC 15° C/W) < F RF transistor (Rth > 15° C/W) JC L RF power transistor (Rlh 15° C/W) JC U power transistor for switching applications (Rlh < 15° C/W) JC * The
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germanium KPL 3009 BLY34 2sb504 2SB502 AF339 C9/C10

1N5411

Abstract: npn transistor RCA 467 Notes and reprints are: AN3749 â'" 40 W att Peak-Envelope-Power Transistor A m p lifie r fo r AM , Transistor, T h yristo r & Diode Manual SP-51 - Power Circuits ST-3219 - RF Power Transistors in Vehicular Radio Communications Equipment ST-3250 - Design Trade-Offs fo r RF Transistor , . (713) 529-7601 . . . .Seattle . 2246 First Avenue S., Seattle, WA 98134 , . < (703) 558-4161 (703) 558-4155 2246 First Avenue S., Seattle, WA 98134
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1N5411 npn transistor RCA 467 CD4004T CA3051 40664 SCR rca 40583 2N1491 2N1493 2N2631 2N2876 2N3229 2N3632
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