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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
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TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

Transistor B C 458

Catalog Datasheet MFG & Type PDF Document Tags

Transistor B C 458

Abstract: c 458 c transistor NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR *BF 457 *BF 458 *BF 459 BF 457, BF 458 and BF 459 are plastic encapsulated transistor designed for video output stages in black and , THOMSON-CSF 76 - 03 1/5 609 BF 457, BF 458, BF 459 STATIC CHARACTERISTICS T h = 25°C (Unless otherwise , voltage Tension de claquage collecteur-émetteur lc = 10 mA >B =0 V(BR)CE0 BF 457 BF 458 BF 459 160 250 , withstand picture tube arcing. Les transistors sous encapsulation plastiqua BF 457, BF 458 at BF459sont
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Transistor B C 458

Abstract: transistor ac 176 71A"&046"B477&7&17,140 81 6,&$14B5B717644 6C !74"B& 176 4 0!74 7A AC) 5B646 47 "&,6/ 5 71A" "4& 64 &&B0 6C A AC 7&6, 4B 45 1 !!A 46 47 B&45 6C !74"B 47 7B "&7" 176D 617"4&46C 6CA6&B6"7&! 67,1&)64717,1&45417&/ 5 71A"E& !74"B& 7 64 B147F" 547 B& & 7 A 40!466& 6 A5 &B!!47 "& 47 &C&0& $14B 1 G!7&& $76 !!74 A 45 , µ ! 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 , Product Folder - Fairchild P/N 2N5550 - NPN Epitaxial Silicon Transistor SEARCH | Parametric | Cross
Fairchild Semiconductor
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Transistor B C 458 transistor ac 176 transistor c 458 transistor b 458 27TYP 86MAX 2N5550BU 2N5550TA

Transistor B C 458

Abstract: MPSA13 Darlington Transistor Thermal Characteristics Ta=25°C unless otherwise noted MPSA13 NPN Darlington Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 , for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform , . Rev. I15 4 MPSA13 Rev. B www.fairchildsemi.com MPSA13 NPN Darlington Transistor , MPSA13 NPN Darlington Transistor · This device is designed for applications requiring extremely
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MPSA14 MPS-A13 transistor 458 c 458 c transistor 100MH

BC327A

Abstract: Transistor B C 458 BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and , . Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted , mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Symbol Ta = 25°C , Figure 2. Static Characteristic -20 IB= mA - 5.0 A I B = - 4.5m = IB 0m A - 4. A I B = -
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Abstract: BC327A PNP Epitaxial Silicon Transistor BC327A PNP Epitaxial Silicon Transistor Switching and , . Collector 2. Base 3. Emitter Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise , 25° unless otherwise noted C Parameter Test Condition Min. Typ. Max. Units , Figure 2. Static Characteristic -20 IB= mA - 5.0 A I B = - 4.5m = IB 0m A - 4. A I B = - 3.5m A = 3.0m IB A I B = - 2 .5 m IB = 0mA - 2. IB = -400 -300 IC[mA], COLLECTOR Fairchild Semiconductor
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2N5550TFR

Abstract: marking b47 71A"&046"B477&7&17,140 81 6,&$14B5B717644 6C !74"B& 176 4 0!74 7A AC) 5B646 47 "&,6/ 5 71A" "4& 64 &&B0 6C A AC 7&6, 4B 45 1 !!A 46 47 B&45 6C !74"B 47 7B "&7" 176D 617"4&46C 6CA6&B6"7&! 67,1&)64717,1&45417&/ 5 71A"E& !74"B& 7 64 B147F" 547 B& & 7 A 40!466& 6 A5 &B!!47 "& 47 &C&0& $14B 1 G!7&& $76 !!74 A 45 , µ ! 4.58 ­0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 , Epitaxial Silicon Transistor Contents ·Features ·Applications ·Product status/pricing/packaging ·Order
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2N5550TFR marking b47 2N5550TAR 2N5550TF

C1008Y TRANSISTOR

Abstract: c1008y Corporation KSC1008 Rev. B 1 www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor , KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor Package Marking and , Capacitance 3 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor , body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance , 5 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor KSC1008 NPN
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KSA708 KSC1008C C1008Y TRANSISTOR c1008y C1008YC transistor BU 102 NPN transistor to-92 "high gain" C1008O

C1008Y TRANSISTOR

Abstract: . B 1 www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor September 2006 , ) 2 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor Package , Capacitance 3 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor , body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance , 5 KSC1008 Rev. B www.fairchildsemi.com KSC1008 NPN Epitacial Silicon Transistor KSC1008 NPN
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transistor BC636

Abstract: BC636TA Epitaxial Silicon Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 , for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform , BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and , Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units VCER , Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage
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BC635 transistor BC636 BC636TA BC636TAR BC636TF BC636TFR

BC638

Abstract: transistor bc638 BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and , Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units VCER , Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Electrical Characteristics Symbol Ta = 25°C unless otherwise noted , www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor Package Marking and Ordering Information Figure 1
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BC637 transistor bc638 Bc638 transistor PNP BC638BU BC638TA BC638TF

transistor vc 548

Abstract: transistor C 548 B Philips capacitance |c = ic = 0; VC = 5 V; f = 1 MHz B - 0.2 fT transition frequency lc = 15 mA , 0.4 - PF C. feedback capacitance lc = ic = 0; VC = 5 V; f = 1 MHz B lc = 15 mA; VC = , b?E D- NPN 12 GHz wideband transistor BFG33; BFG33/X MD C J15 120 hF E 80 , bbSBTBl DDSMflDT Tb5 « A P X P hilips Sem iconductors NPN 12 GHz wideband transistor , The BFG33 is a silicon npn transistor, primarily intended for wideband applications in the 2 GHz
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transistor vc 548 transistor C 548 B Philips

bc640

Abstract: transistor bC640 Epitaxial Silicon Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 , for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform , BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and , Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units VCER , Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage
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BC639 transistor bC640 BC640BU bc640 pnp BC640TA BC640TAR

Transistor B C 458

Abstract: c 458 c transistor FJN3303 NPN Silicon Transistor Planar Silicon Transistor January 2005 Symbol TC = 25°C unless , Silicon Transistor Planar Silicon Transistor Mechanical Dimensions TO-92 +0.25 4.58 ±0.20 , (b) support or sustain life, or (c) whose support device or system, or to affect its safety or , FJN3303 NPN Silicon Transistor Planar Silicon Transistor High Voltage Switch Mode Application · , . Collector 3.Base Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter
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NPN transistor Electronic ballast to92 458 transistor

2N6520

Abstract: c 458 c transistor surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when , 2N6517 2N6517 High Voltage Transistor · · · · Collector-Emitter Voltage: VCEO=350V Collector Dissipation: PC (max)=625mW Complement to 2N6520 Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter
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2N6515 2N6517CTA 2N6517TA 2N6517BU

Transistor B C 458

Abstract: to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to , 2N6519 2N6519 High Voltage Transistor · Collector-Emitter Voltage: VCEO= -300V · Collector Dissipation: PC (max)=625mW · Complement to 2N6516 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter , Power Dissipation Derate above 25°C Junction Temperature Storage Temperature 1. Emitter 2. Base 3
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2N6519BU 2N6519TA

2N6428A

Abstract: Transistor Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 0.46 , body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance , 2N6428A tm NPN Epitaxial Silicon Transistor Features · This device is designed for high , 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise , °C TSTG Storage Temperature Range - 55 ~ 150 °C * These ratings are limiting values
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BF494

Abstract: transistor BF494 Transistor Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 ­0.15 ±0.10 14.47 ±0.40 0.46 , implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used , BF494 tm NPN RF Transistor TO-92 Absolute Maximum Ratings * Symbol 1. Collector 2. Emitter 3. Base Ta = 25°C unless otherwise noted Value Unit VCEO Collector-Emitter Voltage , V IC Collector Current - Continuous 30 mA TJ Junction Temperature 150 °C
Fairchild Semiconductor
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transistor BF494 bf494 equivalent bf494 TRANSISTOR equivalent bf494 TRANSISTOR OF transistor BF494 npn transistor bf494

c 458 c transistor

Abstract: transistor c 458 Characteristics Ta=25°C unless otherwise noted MPSA13 NPN Darlington Transistor Typical Characteristics , MPSA13 NPN Darlington Transistor · This device is designed for applications requiring extremely , . Emitter 2. Base 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted , Operating and Storage Junction Temperature Range - Continuous 1.2 A -55 to +150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min
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transistor c 458

Abstract: 2n6518 the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device , 2N6518 2N6518 High Voltage Transistor · Collector-Emitter Voltage: VCEO= -250V · Collector Dissipation: PC (max)=625mW · Complement to 2N6515 1 TO-92 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter , Power Dissipation Derate above 25°C Junction Temperature Storage Temperature 1. Emitter 2. Base 3
Fairchild Semiconductor
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2N6518BU 2N6518TA
Abstract: Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO , the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device , 2N6516 2N6516 High Voltage Transistor · Collector-Emitter Voltage: VCEO=300V · Collector , 625 150 -55 ~ 150 Units V V V mA mW °C °C · Refer to 2N6515 for graphs Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Fairchild Semiconductor
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2N6516BU 2N6516TA
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