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Transistor AND DIODE Equivalent list

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Transistor AND DIODE Equivalent list

Abstract: Transistor Equivalent list ) IOUT (mA) Pin Connection Clamp Diode Equivalent Circuit OUTPUT 1 6 NC 2 5 , (V) IOUT (mA) Pin Connection Clamp Diode Equivalent Circuit Package 100 COMMON , [ 2 ] Product List Bipolar Transistor Arrays Rating Part No. Function VOUT (V) IOUT (mA) Pin Connection Clamp Diode Equivalent Circuit TD62001P TD62001 RIN 0 TD62002P , TD62064P VOUT (V) IOUT (mA) Pin Connection Clamp Diode Equivalent Circuit 04 NC I4
Toshiba
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Transistor AND DIODE Equivalent list Transistor Equivalent list 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp Octal Darlington Transistor Arrays equivalent transistor 2sk TD62783 equivalent TD62S050AFM TD62S051AFM TD62S350AFM 2SC3420 HSOP16 TD62M8600F

smd transistor J3

Abstract: smd transistor equivalent table , the reverse voltage protection diode, D1, needs to be removed and a diode with a 2 A rating needs to , dissipation on the pass transistor is high, Q1 can be removed and a SOT-223 package installed at Q2. Jumper , SMD 2 3 Diode, Schottky, 2 A, 20 V, SMB Transistor, PNP, SOT-223 Manufacturer/Part Number , accommodate different charge currents and input voltages. Jumpers are provided to disable the timer function, shutdown the charger, and disconnect the LED charge status indicator. Input voltage range: 5 V + 10
Analog Devices
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ADP2291-EVAL ADP2291 smd transistor J3 smd transistor equivalent table j3 smd transistor schematic diagram of led monitor EB052 3M smd transistor BAT1000 SML-LX1206GC-TR ZXT10P20DE6 FZT549

transistor equivalent table

Abstract: IC FP103 transistor and a schottky barrier diode. In this case, you make use the discrete components with proper , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , and one LDO regulator. It provides the pure and excellent regulated output voltage. 1 2 3
ADTech
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ADT7220 transistor equivalent table IC FP103 sot-26 pwm controller Device Name 23 330 LDO 3.3V ccd camera module transistor collector diode protection H/590 F/10V F/25V

transistor equivalent table

Abstract: sot-26 pwm controller transistor and a schottky barrier diode. In this case, you make use the discrete components with proper , Component Description Type Value Composite type with a PNP transistor and schottky barrier diode IC FP103 Q1 PNP transistor Chip transistor MMBT589LT1 L1 Output filter , schottky barrier diode having equivalent specification in the Table A. Table A : Selection guide for , supply chip with 5V 6 5 4 regulated output. It is composed of one PWM A50 controller and
ADTech
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ADT7221 SOT-26 301 PWM controller sot-26 2SB1424 RSX101M-30

1A40Vdiode

Abstract: LM3578 the small-signal control to output voltage transfer function). However, the switch and output diode , necessitate using power switch and output diode with larger current and power dissipation ratings. Larger , inductor, the input and output capacitors, the power switch (included in the LM3578A), and the output diode , the output diode and the switch, the maximum and minimum duty cycles are calculated. Next, the , capacitor is very high, since there is no inductive element between the output diode and the capacitor
National Semiconductor
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AN-1066 1A40Vdiode LM3578 lm3578m 200k inductor 1563A advantages and disadvantage of modem

Transistor Equivalent list

Abstract: diode IN4148 . TR1 transistor, BDT85 (or equivalent) D1 diode, IN4148 (or equivalent); note 1 D2 diode , Philips Semiconductors Product specification NPN microwave power transistor LXE16350X FEATURES â'¢ Diffused emitter ballasting resistors providing excellent current sharing and withstanding a , realizes very good stability of the characteristics and excellent lifetime â'¢ Multicell geometry gives good balance of dissipated power and low thermal resistance â'¢ Internal input and output prematching
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diode IN4148 copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors 1250-003 MBC423

diode IN4148

Abstract: Transistor Equivalent list microwave power transistor LXE18300X FEATURES â'¢ Internal Input and output prematchlng ensures a good stability and allows an easier design of wideband circuits â'¢ Diffused emitter ballasting resistors , bias circuit) COMPONENT DESCRIPTION VALUE CATALOGUE NO. T1 transistor, BDT85 (or equivalent) D1 diode, IN4148 (or equivalent) note 1 D2 diode, BY239800 note 2 R1 resistor 100Q R2 resistor 10 , power transistor Preliminary specification January 1992 File under Discrete Semiconductors, SC15
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SC15 PINNING-FO-91B FO-91B

LM3578

Abstract: 1A40Vdiode period. Once the switch, SW, turns off, diode D starts to conduct and the energy stored in the inductor , However, the switch and output diode peak currents are larger when the converter is operating in discontinuous mode. Larger peak currents necessitate using power switch and output diode with larger current , the output voltage, Vd is the forward voltage drop of the output diode D, and Vce(sat) is the on , output capacitors, the power switch (included in the LM3578A), and the output diode. In order to select
National Semiconductor
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AN1066 1N5819 AN1055 D44C3A MBR0540T1

Transistor Equivalent list

Abstract: Transistor AND DIODE Equivalent list TR1. In thermal contact with D.U.T. DESCRIPTION transistor, BDT85 (or equivalent) diode, IN4148 (or equivalent); note 1 diode, BY239800; note 2 resistor resistor resistor potentiometer, 10 turns (sfernice , Vce (V) 24 Icq (A) 0.3 Pu (W) >32 typ. 35 Gpo (dB) >9 typ. 10 Zi', Zl (û ) see Figs 8 and 9 List of , Philips Semiconductors Product specification NPN microwave power transistor FEATURES · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR ·
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capacitor feed-through RA439

bc547 philips

Abstract: NPN transistor BC547 as a diode voltage source VA has been built-up with transistor T11, zener diode D8 and resistor R41 , the same , already has been mentioned, been built-up with transistor T11, zener diode D9 and resistor R41. The diode , list of both the circuit of figure 6 for as well the MOSFET and the darlington transistor output stage , op-amp IC2A, the current sense resistor R17A and B, the transistor T10 to limit the current of T10 and , the AMPIN+ input of the OTA and AMPOUT drives a bipolar power transistor or a power P-channel MOSFET
Philips Semiconductors
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BZX79C8V2 BD680 BC547 bc547 philips NPN transistor BC547 as a diode Application Note tda5142 R27 transistor mosfet current limiter TDA5142 EIE/AN93013 TDA514 BZX79C12 BYV10-40

B0239

Abstract: Transistor AND DIODE Equivalent list (see Figs 4 and 5) COMPONENT TR1 C 1,C 2 C3, C4 C5 D1 D2 L1 L2 P1 R1 R2 R3 F1 DESCRIPTION transistor, B0239 or equivalent DC blocking chip capacitor feedthrough bypass capacitor electrolytic capacitor diode BY239 or equivalent; note 1 diode BY239 or equivalent; note 2 3.5 turns 0.5 mm copper wire; internal , Philips Semiconductors Preliminary specification NPN microwave power transistor Input and optimum , Philips Semiconductors Preliminary specification NPN microwave power transistor FEATURES ·
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AB-162 transistor LC437 LX1214E500X 100A1201

C2 6 zener diode

Abstract: Transistor AND DIODE Equivalent list -2CHG010) 0.01uF ceramic 1uF ceramic MBR0540L 40V 0.5A Schottky diode Central semiconductor CMPB4448 (or any 1N4448 equivalent 60V signal diode) Central semiconductor CMPD7000 dual diode (These are duals, but four 1N4448 equivalent 60V signal diodes can be substituted for D3+D4 and D5+D6.) Zetex BZX84C6V8, Panasonic MA3068CT, or other 6.8V SOT-23 zener diode (On this evaluation board this is composed of a 6.2V , shown on the schematic Full Parts List C1 47uF 35V Sanyo GX (Tantalum not recommended here) C2
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C2 6 zener diode diode ZENER C2 zener diode c12 zener 18v sot23 Zener Diode C3 4 Zener Diode C3 5 MAX668 ECA-2CHG010 BZX84C24 MA3240CT

Transistor Equivalent list

Abstract: J3 transistor .4 Class AB bias circuit. List of components (see Figs 3 and 4) COMPONENT TR1 C1, C4 C2, C3 C5, C6 C7 , bypass capacitor tantalum capacitor diode BY239 or equivalent; note 1 diode BY239 or equivalent; note 2 4 , Philips Semiconductors Product specification NPN microwave power transistor LFE15600X FEATURES · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a , very good stability of the characteristics and excellent lifetime · Multicell geometry gives good
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J3 transistor 100A101kp diode J3 by239 1500 BDT91 100A101

ff450r12me3

Abstract: C28T be applied to the 6ED100E12-12-F2, but layout and part list of this board provided in chapter 7 , and EconoPACKTM+ Application Note Using these values and the equivalent circuit, it is possible to , transistor Application Note 20 V1.2, 2009-08 AN2008-02 Driver board for EconoDUALTM3 and , Regulator 1 Transformer 1 Transistor Transistor Transistor TrenchMOS Unipolar TVS Diode , + Schematic, Layout and Bill of Material EconoPACKTM+ board Figure 28 IGBT driver ­ Bottom transistor of
Infineon Technologies
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FS450R12KE3 AN2007-04 ff450r12me3 C28T IGBT DRIVER SCHEMATIC sod6 SOT23 transistor R2C t60403-d4615 2ED100E12-F2 6ED100E12-F2 FS150R12KE3G FS225R12KE3 FS300R12KE3

VAC t60403

Abstract: ff450r12me3 be applied to the 6ED100E12-12-F2, but layout and part list of this board provided in chapter 7 , and EconoPACKTM+ Application Note Using these values and the equivalent circuit, it is possible to , transistor Application Note 20 V1.2, 2009-08 AN2008-02 Driver board for EconoDUALTM3 and , Driver Board for EconoDUALTM3 and EconoPACKTM+ modules Industrial Power Edition 2009-10-07 , THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY
Infineon Technologies
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VAC t60403 SOD323R T60403 T60403-D4615-X054 2ED100E12 IGBT DRIVER SCHEMATIC chip

200k inductor

Abstract: AN1066 peak currents necessitate using power switch and output diode with larger current and power , (included in the LM3578A), and the output diode. In order to select these components, it is necessary to , output voltage, and the voltage drops across the output diode and the switch, the maximum and minimum , inductive element between the output diode and the capacitor. This high current flows through the equivalent series resistance (ESR) and equivalent series inductance (ESL) of the capacitor. ESR increases
National Semiconductor
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SMD Transistor Y12

Abstract: transistor Common Base configuration . Diode: signal, low power Diode: variable capacitance Transistor: low power, audio frequency Transistor: power, audio frequency Diode: tunnel diode Transistor: low power, high frequency Multiple of dissimilar devices; miscellaneous devices (e.g. oscillator) Diode: magnetic sensitive Transistor: power , , switching Control or switching device: power (e.g. thyristor) Transistor: power switching Diode , blocked emitter diode, i.e., reverse bias voltage between base and emitter. Data Book 17
Infineon Technologies
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SMD Transistor Y12 transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book

C1608JB1H104KT

Abstract: KCA-K4R Diode Diode Diode Diode Diode Diode Diode Diode Diode Diode Diode Diode Transistor , Equivalent Equivalent Equivalent Equivalent Equivalent DMC Co., Ltd Name Part List Rev.4 P/N FIT , .5 2-2. Initialization Mode and Idling Mode , .17 2-10. List of Command/Responses , .26 Terminal No./Name External Dimensions Circuit Drawing Part List Connector Mounting
DMC
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FIT-10 RK73B1JTTD472J S-93C46ADFJ-TB-G LIM55A-T GRM188B11H472KA01D C1608JB1H104KT KCA-K4R 1SS355TE-17 UWX1C100MCL1GB IC/FSGM300N Equivalent SA1037AKT146R 2SC2412KT146R 2SA1037AKT146R RK73B1JTTD332J RK73B1JTTD103J

8002 audio amplifier 8 pin

Abstract: 2TW/170 across the switching transistor and diode is increased to make the ripple voltage higher and this , made by open collector driving of the transistor etc. In the case that both soft start and ON-OFF of transistor are used, since the discharge current of C4 and C5 flows across the transistor for ON-OFF , outside. 2-3 Circuit Diagram Internal Equivalent Circuit (SPI-8001TW and SPI-8002TW) VIN 3 VCC SPI , PWM comparator to generate the drive signal of rectangular wave and to drive the switching transistor
Sanken Electric
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8002 audio amplifier 8 pin 2TW/170 UUD1E471MNR1GS The 8002 audio Amplifier IC 8001/2TW SPI-8000TW EI-00070 SPI-8003TW

C5100 MOSFET

Abstract: UC3842 smps design . . . 25 10 PCB layout and list of materials . . . . . . . . . . . . . . . . . . . . . . . . . , . Figure 20. Figure 21. Figure 22. ESBT symbol and equivalent circuit . . . . . . . . . . . . . . . . , applications. Figure 1. ESBT symbol and equivalent circuit CC B B G G S S The , : one to ensure the necessary current to the base of the power bipolar transistor and the second to , Transistor is 10 times bigger than that of an equivalent high voltage Power MOSFET. Starting from the
STMicroelectronics
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AN1889 C5100 MOSFET UC3842 smps design UC3842 step up converter UC3842 smps project flyback smps uc3845 STC03DE170HV
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