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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

Transistor 78 L 05

Catalog Datasheet MFG & Type PDF Document Tags

Transistor 78 L 05

Abstract: ecifica tio n BFQ34 NPN 4 GHz wideband transistor N AUER PHILIPS/DISCRETE f .l » e'E , iconductors b b S B T B l DDBlSbS 57fl â  APXroductsPecification NPN 4 GHz wideband transistor BFQ34 , 0.4 -84 23.2 - 500 0.5 177 0.08 58 4.9 78 0.3 -104 15.6 800 , 176 0.08 59 5.0 78 0.2 -112 15.7 800 0.5 160 0.13 63 3.3 63 , 0.06 54 11.8 100 0.4 -93 23.5 500 0.5 175 0.09 60 5.1 78 0.2
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Transistor 78 L 05 BFQ34/01 ON4497

BCY77

Abstract: BCY79 Emitter-base capacitance (â'" VEBO = 0.5 V; f= 1 MHz) CEB0 11 (< 15) pf Noise figure (-/c = 0.2 mA; -l , 2mA; â'" l/CE = 5 V; f= 1 kHz) BCY 77 BCY 77 BCY 77 â'" BCY 78 BCY 78 BCY 78 BCY 78 Type , forward current transfer ratio /?pe = f(l c) -VCE = 1 V; 7"amb = parameter BCY 78 IX, BCY 79 IX % 10 , . BCY 79 0.5 1.0 V BE 264 BCY77, BCY 78, BCY79 Output characteristics Ic = f(VCE) JB â , . 'h.Wce=5V) "fiv") BCY 77, BCY 78, BCY 79 2JI 1.5 1.0 0.5 -I =2 mi
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BCY78 Q62702-C327-V1 BCY 791x zr 4.7v bcy 78 1Zv transistor Q62702-C 327-V2 327-V3 Q60203-Y78-G

BCY78X

Abstract: BCY79 Emitter-base capacitance (â'" VEBO = 0.5 V; f= 1 MHz) CEB0 11 (< 15) pf Noise figure (-/c = 0.2 mA; -l , 2mA; â'" l/CE = 5 V; f= 1 kHz) BCY 77 BCY 77 BCY 77 â'" BCY 78 BCY 78 BCY 78 BCY 78 Type , '" "'c Input characteristic Ic = f(VBE) -I/ce = 5V; ramb = 25 °C M BCY 77, BCY 78. BCY 79 0.5 1.0 V , 1000 800 600 «0 200 Output characteristics Ic = f(VCE) l/BE = parameter BCY 77, BCY 78, BCY 79 , . BCY 77, BCY 78, BCY 79 2JI 1.5 1.0 0.5 -I =2 mi
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BCY78X BCY77VII BCY77VIII Q60203-Y78-H Q60203-Y78-J Q60203-Y78-K Q60203-Y79-G Q60203-Y79-H

it136

Abstract: TO-78 TO-71 NF dB M ax BVceo V M in ICBO nA M ax u M Hz @ l(j M in Cobo pF , ±0.2 0.7 ± 0.2 0±1 0.050 ÃoÅ"dia, R a L Ac 05 45°C-60°C Max. 11 0 ± 05 All , PACKAGE V BE 1-2 mV Max 2N3810 2N3810A 2N3811 2N3811A 2N5117 2N5118 2N5119 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 TO-78 3 1.5 3 1.5 3 5 5 10 5 10 5 3 5 10 100 100 225 225 100 100 50 IT 130 TO-78 TO-71 2 5 IT130A TO-78 TO-71 TO-78 TO-71 TO-78
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it136 IT131 IT132 IT136 IT138 IT139 RS468

Fdd spindle motor circuit

Abstract: SLO 365 R transistor; loMAx=70mA Requires external power transistor; loyjw=70mA Requires external power transistor; bult-in auto reset circuit; lovjw=70mA Requires external power transistor; built-in auto reset circuit; low*x=70mA Built-in power transistor and auto reset circuit: lo v« = 1; A: lock-up detection output Built-in power transistor and auto reset circuit: I o u a x = 1 ; A: lock-up detection output No.3121 No , 11.4 11.4 16.5 O T J -C T C T 'l_ J L J 19.41 2.54 2.54 26.3 2.54 26.3 32.0 37.1 52.3 19.4 19.4
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D0032M Fdd spindle motor circuit SLO 365 R 6476FP 3-phase motor drive fdd motor driver BA6485FP MFS16 MFS20 MFS24 MFP24 MFP28

transistor buz 36

Abstract: A1301 transistor U Z 12 A BUZ 71 BUZ 71 A BUZ 71 L BUZ10S2 BUZ 11 S2 BUZ 71 S2 BUZ 20 BUZ 21 BU Z22A BUZ 72 BU Z72A BU Z72AL BU Z7 2 L BUZ 31 BUZ 32 BUZ 73 B U Z73A B U Z73AL B U Z7 3 L ^ D S (m ax) V 50 A 23 23 30 26 , m 60 S 100 m 200 L= Logic Level SBS= Siemens Bauteile Service , AKTIENGESELLSCHAF 03E D fl23SbOS 001Sb4Q 4 «ISIEG 'T '- S j- ö l N-Kanal Anreicherungstypen im , Z90A BUZ 78 BUZ 80 BU Z80A BUZ 50 BU Z50A BU Z5 0 B BU Z50C ^ D S (m ax) V 400 fcfrnax) A 5.5 3 2.6 6 5
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A13Q1-A2 A1317-A2 A1610-A2 transistor buz 36 A1301 transistor Z346 A3206A z309 A1306A T0-220 C67078A1300-A2 A1329-A2 A1301 A1330-A3

transistor Bc 542

Abstract: transistor bc 564 tape ^ Additional marking for specialsa* l) 06 ® View on flat side of transistor, view on gummed tape 05 » View on round side of transistor, view on gummed tape a) Additional marking "0": Taping , ^2DQRb OGD'iMBS ' BF 883 S Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages , Storage temperature range -65.+150 *C Maximum thermal resistances Junction ambient ^hJA 78 K/W Junction case ^thJC 17.8 K/W T1.2/820.0888 E 2572 bâ'"05 51 TELEFUNKEN ELECTRONIC BF 883 S 17E ]> b
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transistor Bc 542 transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 T-33-0S- T-33-05 JEDECTO126

A1306 TRANSISTOR

Abstract: t a1306 14 3.1 0.1 40 H A1316-A2 BUZ 71 A 13 3.1 0.12 40 m A1316-A3 BUZ 71 L 14 3.1 0.1 40 A1326-A2 , BUZ73AL 5.8 3.1 0.6 40 A1328-A3 BUZ73L 7 3.1 0.4 40 A1328-A2 L= Logic Level SBS=Siemens Bauteile , A1321-A3 BUZ 78 800 1.5 3.1 8 40 a A1318-A2 BUZ 80 2.6 1.67 4 75 a A1309-A2 BUZ80A 3 1.67 3 75 s , A1452-A2 11FREDFET, Leistungstransistor mit schneller Inversdiode 11FREDFET, power transistor with , BUZ325 400 12.5 1 0.35 125 m A3118-A2 BUZ326 10.5 1 0.5 125 m A3112-A2 BUZ3821> 12.5 1 0.4 125 s
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A1306 TRANSISTOR t a1306 A1309 A1318 a1328 A1013 C67078- A1300-A2 A1301-A2 BUZ11 A1301-A3 A1331-A2

CMT08N80N3P

Abstract: CMT08N80 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage , Value Unit ID Drain to Current Continuous 7.8 A IDM V ±40 V PD 190 , TJ = 25 40 TL 260 (VDD = 100V, VGS = 10V, IL = 20A, L = 10mH, RG = 25) Thermal , 1 CMT08N80 POWER FIELD EFFECT TRANSISTOR ORDERING INFORMATION Part Number Package , ) VDS(on) 11 V 0.1 0.5 2.0 Forward Transconductance (VDS = 100 V, ID = 4.7A) * gFS
Champion Microelectronic
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CMT08N80N3P

ML63SA33

Abstract: 0.3 0.5 0.5 -0.5 -0.5 100 78 85 Note : 1. Schottky diode: 1N5817 or 1N5819 (forward , 100 0.5 100 78 85 Units V V V V uA uA mA uA KHz % % VIN = 1.8V, IOUT = 10mA, Ta = , 0.9 0.8 35 7 150 0.5 100 78 85 Units V V V V uA uA mA uA KHz % % VIN = 2.0V , Max 3.383 6.5 0.9 0.8 35 7 180 0.5 100 78 85 Units V V V V uA uA mA uA KHz % , 5.000 0.8 60 7 210 0.5 100 78 85 P10/11 Max 5.125 6.5 0.9 0.8 Units V V V V
Minilogic Device
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ML63SA33 ML63S ML63SA ML63SB ML63SC ML63SD ML63SE

SOT89 MARKING CODE B2

Abstract: 0.3 0.5 0.5 -0.5 -0.5 100 78 85 Note : 1. Schottky diode: 1N5817 or 1N5819 (forward , 6.5 0.9 0.8 35 7 100 0.5 100 78 85 Units V V V V uA uA mA uA KHz % % VIN = , , Typ 3.000 0.8 Max 3.075 6.5 0.9 0.8 35 7 150 0.5 100 78 85 Units V V V V uA , = 6.0V VLX= 6.0V , Typ 3.300 0.8 Max 3.383 6.5 0.9 0.8 35 7 180 0.5 100 78 85 , VIN= 4.75V , VIN= 6.0V VLX= 6.0V , Min 4.875 Typ 5.000 0.8 60 7 210 0.5 100 78 85
Minilogic Device
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SOT89 MARKING CODE B2 ML63SF P11/11

SF 369

Abstract: TRANSISTOR C 369 .2 Power dissipation Pp = f(Tm},). R = 78 W I *â'¢ l' -on nu l «G , PowerMOS transistor BUZ83 N AMER PHILIPS/DISCRETE OLE D â  tb53131 OOlMböE 1 â  July 1987 GENERAL DESCRIPTION N-channel enhancement mode fleld-effeci power transistor in a metal envetope. This , 78 W rds(on) Drain-source on-state resistance 4,0 n MECHANICAL DATA Dimensions in mm Net mass: 12 , Material Copyrighted By Its Respective Manufacturer I PowerMOS transistor _BUZ83 _ N AMER PHILIPS
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SF 369 TRANSISTOR C 369 TB531 t03 package transistor pin dimensions K 3911 7Z8388S T-39-11 S3T31

transistor p86

Abstract: sps transistor rSA N Y O S E M IC O N D U C T O R CORP 7b D Ë J 7=1^7071= D O O a S l? S p , it » -*» « Photo Transistor a « T -V /- 7 3 Lens Appearance Clear Colored Clear Colored , Transistor Photo Transistor Photo Transistor Photo Transistor Photo Transistor Photo Transistor Photo Transistor mm 3.2 3.5 3.0 3.0 3.5 3.0 3.5 M Drawing Page 30 / / n a a n 31 a= a: * 3= S I a= 7# m , Detector Photo Transistor Photo Transistor Photo Transistor Photo Transistor M Drawing Page 31 / / a a I
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transistor p86 sps transistor p88 transistor transistor p85 transistor p89 p83 transistor SPS-103 SPS-103C SPS-131C SPS-135C SPS-181C SPI-202

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 Domestic & Overseas Network 74 74 74 75 75 76 76 76 76 77 78 78 79 79 79 80 80 80 81 81 81 81 82 82 82 , BCW30 Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD SBD Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor
KEC
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alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ROOM3501

TO92A

Abstract: Transistors V C E(SA T ) Ul 1. 1 NO. M A X IM U M R A T IN G S X TYPE P O L A R IT Y , ) fT (MHz) max max 2N 2N 2N 2N 2N 2453 2453A 2639 2640 2641 N N N N N TO-78 TO-78 TO-78 TO-78 TO-78 300 300 600 600 600 50 50 30 30 30 30 50 45 45 45 , 8 7 7 4 4 4 2N 2N 2N 2N 2N 2642 2643 2644 2903 2903A N N N N N TO-78 TO-78 TO-78 TO-78 TO-78 600 600 600 300 300 30 30 30 50 50 45 45 45 30 30
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TO92A MELF-005 TQ-220A MELF-002 MELF006 L0T17

T4148

Abstract: AT-41486 Noise Silicon Bipolar Transistor Features · · · Low Noise Figure: 1.4 d B typical at 1.0 GHz 1.7 d B , bipolar transistor housed in a low cost, surface mount plastic package. This device is designed for use in , FIGURE AND ASSOCIATED GAIN V I . FREQUENCY I^ Î^ S P L C S 2.34 ± .38 · .100 ± .01 5L 2.54 ± .38 , .05 Noise Parameters: V c e = 8 V , lc = 10 m A Freq. GHz 0.1 0.5 1.0 1.0 2.0 Frequency, GHz , D llHlIkt 000b4ñl I AT-41486 Low Noise Silicon Bipolar Transistor Absolute Maximum
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T4148 Tbb 38 AVANTEK transistor Avantek UA-152
Abstract: Excellent Logarithmic Conformance: rB E - 0.3 i l typ Available in Die Form Lo/vNase, ^fetched dial R\P Transistor M T O PIN CONNECTION TO-78 (H Suffix) GENERAL DESCRIPTION T he M A T03 dual m onolithic PN , applies to T O -78 not using a heat sink, and L C C ; devices in free air only. For T O -78, derate linearly at 6.3 m W /°C above 70°C am bient tem perature; for L C C , derate at 7.8 m W /°C. NOTES ^ u , = 0.4,tf - 1.08e-9,tr = 3e-8, cjc = 40p,vjc = 0.55, mjc = 0.5,cjs = 0,ikf = 160m) q.q l n1 n2 n3 n4 -
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TRANSISTOR BC 208

Abstract: bu208D ALGG BU 208 D Silicon NPN Power Transistor A pplications: Horizontal deflection circuits In , VCES = 1500 V Collector-emitter breakdown voltage 'C ES 0.5 700 4.5 3.2 mA V / c = 100 mA , MHz 'CBO pF S w it c h in g characteristics /. = 4.5 A, L = 1.8 A, Lb = 7 pH, Storage time , 2 597 D -0 2 TELEFUNKEN ELECTRONIC 17E » fi^eoo^b OQOTMbl 4 m k L G G BU 208 D V *42*3 * 1 | S P '0 - > V iM S 05 *C r · 0 . Ot 10 A ar: k > S V i\ v. s N V
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TRANSISTOR BC 208 bu208D bc 301 transistor TRANSISTOR BC 208 B BF56 Bu 208 D D--01

j78 transistor

Abstract: (A) 0.05 Pli (W) >15 typ. 18 Gpo (dB) >7.8 typ. 8.2 ne (%) typ. 50 Z ,;Z L (ö ) see , Philips Semiconductors Product specification NPN microwave power transistor FEATURES · , silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package , ) Ic q (A) 0.05 Pu (W) >15 Gpo (dB) >7.8 nc (%) typ. 50 Zi; ZL (£i) see Figs 6 and 7 , . 1997 Feb 18 71 Philips Semiconductors Product specification NPN microwave power transistor
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j78 transistor LLE15180X BDT91 BY239 100A101

apx transistor

Abstract: field-effect transistor DYNAMIC CHARACTERISTICS T, = 25 °C unless otherwise specified. SYM BO L COND m , PHILIPS/ DISCR ETE b?E D BF545A; BF545B; BF545C N-channel silicon junction field-effect transistor , oscillators and mixers. BF545C 12 25 mA â'¢ Low leakage level (typ. 500 fA) SYM BO L , V; lD= 1 jxA 0.4 S 7.8 V Y* common source transfer admittance VDS= 15 V; Vos = 0 , Philips Semiconductors N-channel silicon junction field-effect transistor BF545A; BF545B; BF545C
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apx transistor 00Z353T MBB081 00E3S3 MBB453 MBB452 MBB451
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