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Part Manufacturer Description Datasheet BUY
100A484S7C Integrated Device Technology Inc SB-28, Tube visit Integrated Device Technology
100A474S7DF Integrated Device Technology Inc CDIP-24, Tube visit Integrated Device Technology
100A484S8Y8 Integrated Device Technology Inc SOJ-28, Reel visit Integrated Device Technology
100A474S5DF Integrated Device Technology Inc CDIP-24, Tube visit Integrated Device Technology
100A474S4Y Integrated Device Technology Inc SOJ-24, Tube visit Integrated Device Technology
100A484S7Y Integrated Device Technology Inc SOJ-28, Tube visit Integrated Device Technology

Toshiba transistor Ic 100A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: RN1970FS,RN1971FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1970FS,RN1971FS Switching, Inverter Circuit, Interface Circuit and Driver , ) COLLECTOR CURRENT IC (mA) RN1970FS IC - VI(ON) 100 Ta=100°C 10 25 1 -25 EMITTER COMMON , Ta=100°C 10 EMITTER COMMON IC / IB=20 1 0.1 100 RN1971FS 25 -25 1 10 , (sat) - IC 1000 Ta=100°C COLLECTOR - EMITTER SATURATION VOLTAGE VCE(sat) (mV) DC CURRENT Toshiba
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RN2970FS RN2971FS
Abstract: RN2912FS,RN2913FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , '5 â'50 mA â'• Weight:0.001g (typ.) V IC â'• TOSHIBA Maximum Ratings (Ta = 25 , ) COLLECTOR CURRENT IC (mA) -100 EMITTER COMMON VCE=-0.2V -1000 Ta=100°C 25 -25 -100 , -100 Ta=100°C -10 EMITTER COMMON IC/IB=20 -1 -0.1 hFE - IC RN2913FS -100 VCE(sat) - IC COLLCTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1000 Ta=100°C 1000 -25 Toshiba
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RN1912FS RN1913FS
Abstract: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , ) RN1110FS 10000 Ta=100°C COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 10 25 , ) 10000 COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) IC - VI(OFF) Ta=100°C 10 25 , Ta=100°C 10 EMITTER COMMON IC / IB=20 hFE - IC RN1111FS 1000 10 100 VCE(sat) - IC 1000 Ta=100°C COLLECTOR - EMITTER SATURATION VOLTAGE VCE(sat) (mV) DC CURRENT Toshiba
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RN2110FS RN2111FS
Abstract: RN2972FS,RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , "¦ 2004-02-27 RN2972FS,RN2973FS IC - VI(ON) RN2972FS RN2972FS Ta=100°C -10 25 -1 -25 , -1.4 IC - VI(OFF) COLLECTOR CURRENT IC (µA) -10000 Ta=100°C -10 25 -1 -25 -0.1 , EMITTER COMMON VCE=-5V 10 -0.1 -1 -10 COLLECTOR CURRENT IC (mA) -100 Ta=100°C -10 25 , VCE(sat) - IC COLLCTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1000 Ta=100°C 1000 Toshiba
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RN1972FS RN1973FS
Abstract: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , =-0.2V -0.1 -0.1 RN2113FS Ta=100°C -25 25 -100 EMITTER COMMON VCE=-5V -100 0 IC - , VI(OFF) COLLECTOR CURRENT IC (µA) -10000 Ta=100°C -10 25 -1 -25 -0.1 -0.1 , =-5V 10 -0.1 -1 -10 -100 -100 Ta=100°C -10 EMITTER COMMON IC/IB=20 -1 -0.1 , Ta=100°C -25 25 EMITTER COMMON IC/IB=20 -1 -0.1 -1 -10 COLLECTOR CURRENT IC (mA Toshiba
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RN1112FS RN1113FS
Abstract: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , "¦ 2004-03-03 RN1907FS~RN1909FS (Q1,Q2 Common) RN1907FS RN1907FS IC - VI(ON) Ta=100°C 10 25 1 , COLLECTOR CURRENT IC (µA) Ta=100°C 10 25 1 0.4 0.6 0.8 1 1.2 1.4 INPUT , =0.2V IC - VI(OFF) COMMON EMITTER VCE=5V 1000 Ta=100°C 25 -25 100 10 0.1 0.1 1 , COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 10 Ta=100°C 25 1 -25 COMMON Toshiba
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RN1908FS RN2907FS RN2909FS
Abstract: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , 2004-02-27 RN1967FS~RN1969FS (Q1,Q2 common) RN1967FS RN1967FS IC - VI(ON) Ta=100°C 10 25 1 , CURRENT IC (µA) 10000 Ta=100°C 10 25 1 0.4 0.6 0.8 1 1.2 1.4 INPUT , =0.2V IC - VI(OFF) COMMON EMITTER VCE=5V 1000 Ta=100°C 25 -25 100 10 0.1 0.1 1 , COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 10 Ta=100°C 25 1 -25 COMMON Toshiba
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RN1968FS RN2967FS RN2969FS 1969FS RN1969
Abstract: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , RN2967FS~RN2969FS (Q1,Q2 common) RN2967FS RN2967FS IC - VI(ON) Ta=100°C -10 25 -1 -25 , Ta=100°C 25 -25 EMITTER COMMON VCE= -0.2V -1 -10 -1 -1.2 -1.4 IC - VI(OFF , COLLECTOR CURRENT IC (µA) EMITTER COMMON VCE= -0.2V -10 Ta=100°C -1 -0.1 -0.1 -0.8 , ) DC CURRENT GAIN hFE Ta=100°C 25 -25 100 EMITTER COMMON VCE= -5V EMITTER COMMON IC Toshiba
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RN2968FS
Abstract: RN2907FS~RN2909FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , RN2907FS~RN2909FS RN2907FS RN2907FS IC - VI(ON) Ta=100°C -10 25 -1 -25 EMITTER , -0.2 -100 RN2908FS COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) -10 Ta=100 , CURRENT IC (µA) EMITTER COMMON VCE= -0.2V -10 Ta=100°C -1 -0.1 -0.1 -0.8 EMITTER , hFE Ta=100°C 25 -25 100 EMITTER COMMON VCE= -5V EMITTER COMMON IC / IB=20 -100 Toshiba
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Abstract: RN2972FS,RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , 50 â'• V IC â'• TOSHIBA Maximum Ratings (Ta = 25°C) (Q1, Q2 common) (E1) (E2 , ¯ R1 1 kâ"¦ 2004-04-12 RN2972FS,RN2973FS IC - VI(ON) RN2972FS RN2972FS Ta=100 , VOLTAGE VI(OFF) ( V) RN2973FS -1.4 IC - VI(OFF) COLLECTOR CURRENT IC (µA) -10000 Ta=100 , Ta=100°C -10 25 -25 EMITTER COMMON IC/IB=20 -1 -0.1 -1 -10 COLLECTOR CURRENT IC Toshiba
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Abstract: RN2910FS,RN2911FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , IC (µA) -10000 Ta=100°C -10 25 -25 EMITTER COMMON VCE=-0.2V -0.1 -0.1 -25 -10 , VI(OFF) -10000 COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) -100 -1000 Ta=100 , ,RN2911FS hFE - IC RN2910FS RN2910FS Ta=100°C 1000 -25 100 25 EMITTER COMMON VCE=-5V 10 -0.1 -1 -10 -100 Ta=100°C -100 25 -10 -25 EMITTER COMMON IC/IB Toshiba
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RN1910FS RN1911FS
Abstract: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications package Incorporating a bias resistor into a transistor reduces parts count , VI(OFF) 10000 COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 Ta=100°C 25 , Ta=100°C 10 25 -25 1 0.1 100 COLLECTOR CURRENT IC (mA) hFE - IC RN1973FS Toshiba
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Abstract: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver , "¦ 2004-04-12 RN1972FS,RN1973FS (Q1,Q2 common) RN1972FS IC - VI(ON) RN1972FS Ta=100°C 10 25 , COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 Ta=100°C 25 1 -25 EMITTER COMMON , 100 EMITTER COMMON VCE=5V 10 0.1 1 10 100 Ta=100°C 10 -25 EMITTER COMMON IC Toshiba
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Abstract: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , (ON) RN1904FS 100 COLLECTOR CURRENT IC (mA) Ta=100°C 10 1 INPUT VOLTAGE VI(ON) (V) 100 COLLECTOR CURRENT IC (mA) Ta=100°C 10 0.1 0.1 25 1 -25 COMMON EMITTER VCE , ) IC - VI(ON) RN1906FS 100 100 Ta=100°C COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC , =5V COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (µA) 10000 1000 Ta=100°C 25 -25 100 Toshiba
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RN1902FS RN1903FS RN1905FS RN2901FS RN2906FS 1906FS
Abstract: RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , ) RN1901FS 100 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 100 Ta=100°C 10 25 1 , =0.2V 100 0.1 10 100 IC - VI(ON) RN1904FS 100 COLLECTOR CURRENT IC (mA) 100 Ta=100°C 10 1 INPUT VOLTAGE VI(ON) (V) IC - VI(ON) RN1903FS COLLECTOR CURRENT IC (mA) Ta=100 , VOLTAGE VI(ON) (V) INPUT VOLTAGE VI(ON) (V) IC - VI(ON) IC - VI(ON) RN1906FS 100 100 Ta=100 Toshiba
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1904FS
Abstract: RN2901FS~RN2906FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , 0.1 0.12 2004-02-27 RN2901FS~RN2906FS RN2901FS RN2902FS IC - VI(ON) Ta=100 , RN2904FS IC - VI(ON) COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta=100°C 25 -1 -25 , ) -100 COLLECTOR CURRENT IC (mA) -100 Ta=100°C -10 25 -1 -25 EMMITER COMMON VCE= -0.2V -0.1 -0.1 IC - VI(ON) Ta=100°C INPUT VOLTAGE VI(ON) ( V) RN2905FS -100 -100 Toshiba
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RN2903FS 2906FS 2904FS
Abstract: RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor , ) RN2693FS RN2694FS IC - VI(ON) COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Ta=100 , (ON) IC - VI(ON) -100 COLLECTOR CURRENT IC (mA) -100 Ta=100°C -10 25 -1 -25 EMMITER COMMON VCE= -0.2V -0.1 -0.1 IC - VI(ON) Ta=100°C INPUT VOLTAGE VI(ON) ( V , CURRENT IC (µA) -25 -100 INPUT VOLTAGEã''VI(OFF) ( V) Ta=100°C 25 -25 -100 -10 Toshiba
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RN2962FS RN2963FS RN2964FS RN2965FS RN1961FS RN1966FS
Abstract: RN1961FS~RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor , COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 100 Ta=100°C 10 25 1 -25 COMMON EMITTER , 10 100 IC - VI(ON) RN1964FS 100 COLLECTOR CURRENT IC (mA) 100 Ta=100°C 10 1 INPUT VOLTAGE VI(ON) (V) IC - VI(ON) RN1963FS COLLECTOR CURRENT IC (mA) Ta=100°C 10 , (ON) (V) INPUT VOLTAGE VI(ON) (V) IC - VI(ON) IC - VI(ON) RN1966FS 100 100 Ta=100 Toshiba
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RN1962FS RN1965FS 1966FS 1964FS
Abstract: RN4986FS TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in , CURRENT IC (µA) COLLECTOR CURRENT IC (mA) 100 Ta=100°C 10 25 1 -25 COMMON EMITTER VCE , hFE 25 Ta=100°C 25 -25 100 COMMON EMITTER VCE = 5V 10 1 10 COMMON EMITTER IC / IB = 20 100 Ta=100°C 25 -25 10 100 1 COLLECTOR CURRENT IC (mA) 10 100 , COLLECTOR CURRENT IC (µA) COLLECTOR CURRENT IC (mA) -100 Ta=100°C -10 25 -1 -25 EMMITER Toshiba
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Abstract: RN4992HFE, RN4993HFE TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias , RN4992HFE RN4992HFE IC - VI(ON) Ta=100°C 10 25 1 -25 EMITTER COMMON VCE=5V 0.1 1000 , ) RN4993HFE 0 100 COLLECTOR CURRENT IC (µA) Ta=100°C -1 -25 -0.1 -0.1 0.4 0.6 0.8 , ) COLLECTOR CURRENT IC (mA) 100 EMITTER COMMON VCE=5V -1000 Ta=100°C 25 -25 -100 , RN4992HFE RN4992HFE hFE - IC Ta=100°C 1000 25 -25 100 EMITTER COMMON VCE=5V 10 0.1 Toshiba
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