Datasheet Search Results			1 - 14 of about 14 for TS-98
	TS-98	Beijing Chaoyang Kehai Industrial Automated Instruments Factory	Ultrasonic Level Meter	130.6 Kb,  2 Pages.
	TS982	STMicroelectronics	Wide bandwidth dual bipolar operational amplifier	482.69 Kb,  20 Pages.
	TS982	STMicroelectronics	RAIL TO RAIL HIGH OUTPUT CURRENT DUAL OPERATIONAL AMPLIFIER	567.99 Kb,  15 Pages.
	TS982	STMicroelectronics	RAIL TO RAIL HIGH OUTPUT CURRENT DUAL OPERATIONAL AMPLIFIER	424.36 Kb,  16 Pages.
	TS982C6R	Fuji Electric Co., Ltd.	SILICON DIODE	388.9 Kb,  12 Pages.
	TS982DW	STMicroelectronics	Rail to Rail High Output Current Dual Operational Amplifier	567.99 Kb,  15 Pages.
	TS982DWT	STMicroelectronics	Rail to Rail High Output Current Dual Operational Amplifier	567.99 Kb,  15 Pages.
	TS982IDW	STMicroelectronics	Wide bandwidth dual bipolar operational amplifier	482.67 Kb,  20 Pages.
	TS982IDW	STMicroelectronics	RAIL TO RAIL HIGH OUTPUT CURRENT DUAL OPERATIONAL AMPLIFIER	424.36 Kb,  16 Pages.
	TS982IDWT	STMicroelectronics	Wide bandwidth dual bipolar operational amplifier	482.67 Kb,  20 Pages.
	TS982IDWT	STMicroelectronics	RAIL TO RAIL HIGH OUTPUT CURRENT DUAL OPERATIONAL AMPLIFIER	424.36 Kb,  16 Pages.
	TS982IYDW	STMicroelectronics	Wide bandwidth dual bipolar operational amplifier	482.68 Kb,  20 Pages.
	TS982IYDWT	STMicroelectronics	Wide bandwidth dual bipolar operational amplifier	482.19 Kb,  20 Pages.
	TS985C6R	Fuji Electric Co., Ltd.	SILICON DIODE	391.66 Kb,  12 Pages.

Fulltext Datasheet Results		1 - 21 of about 21 for TS-98
	First line: ultrasonic level sensor distance measure ultrasonic DATASHEET of ULTRASONIC-LEVEL ultrasonic distance meter Ultrasonic Distance sensor TS-98 Ultrasonic Level Meter Special Characteristics xxxxThe TS-98 Ultrasonic Level Meter type instrument measuring amount solid liquid material container. instrumen Abstract: .. TS-98 Ultrasonic Level Meter. Special Characteristics. xxxxThe TS-98 Ultrasonic Level Meter is a new type of instrument for measuring the amount of solid or liquid material in a container. The ..  Tags: Ultrasonic Distance sensor DATASHEET of ULTRASONIC-LEVEL ULTRASONIC METER  ultrasonic level sensor  ultrasonic distance meter  Ultrasonic distance  ULTRASONIC  distance measure ultrasonic   TS-98	130.6 Kb	2 Pages	Original
	First line: BFP620F Silicon Germanium Transistor Preliminary data high gain noise amplifiers Smallest Package 0.59mm Noise figure 0.65 outstanding Abstract: .. TS 98 °C 1 Ptot 185 mW. Junction temperature Tj 150 °C. Ambient temperature TA -65 .. 150. Storage ..  Tags: TRANSISTOR MARKING YB   BFP620F	48.86 Kb	3 Pages	Original
	First line: BFP620F Silicon Germanium Transistor Preliminary data high gain noise amplifiers Smallest Package 0.59mm Noise figure 0.65 outstanding Abstract: .. TS 98 °C 1 Ptot 185 mW. Junction temperature Tj 150 °C. Ambient temperature TA -65 .. 150. Storage ..  Tags: BFP620*   BFP620F	48.87 Kb	3 Pages	Original
	First line: 4 pin dual-emitter 10GHz oscillator RF POWER TRANSISTOR NPN RF TRANSISTOR 10GHZ low noise BFU510* M3D124 BFU540 SiGe wideband transistor Preliminary specification 2001 Abstract: .. Ptot total power dissipation Ts ≤ 98 °C − −115 mW. hFE DC current gain IC = 40 mA; V CE = 2 V; T j = 25 °C 70 140 210. Gmax maximum power gain IC = 40 mA; V CE = 2 V; f = 2 GHz; Tamb = 25 °C − 20 − dB. NF noise figure IC = 2 mA ..  Tags: BFU510* RF TRANSISTOR 10GHZ low noise RF POWER TRANSISTOR NPN 4 pin dual-emitter 10GHz oscillator   BFU540	118.87 Kb	12 Pages	Original
	First line: RF NPN POWER TRANSISTOR 2.5 GHZ 4 pin dual-emitter o-50 MARKING A4 transistor 10GHz oscillator M3D124 BFU540 SiGe wideband transistor Preliminary specification 2002 Abstract: .. Ptot total power dissipation Ts ≤ 98 °C − −115 mW. hFE DC current gain IC = 40 mA; V CE = 2 V; T j = 25 °C 70 140 210. Gmax maximum power gain IC = 40 mA; V CE = 2 V; f = 2 GHz; Tamb = 25 °C − 20 − dB. NF noise figure IC = 2 mA ..  Tags: 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ 4 pin dual-emitter   BFU540	141.32 Kb	12 Pages	Original
	First line: 44s sot23 BAS40./BAS40W Silicon Schottky Diode General-purpose diode high-speed switching Circuit protection Voltage clamping High-level detecting mixing Abstract: .. 127 °C BAS40-04 BAS40-04 , BAS40-06 BAS40-06 , TS 56 °C BAS40-06W BAS40-06W , TS 106 °C BAS40-05 BAS40-05 , TS 31 °C BAS40-05W BAS40-05W , TS 98 °C BAS40-07W BAS40-07W , TS 118 °C. Ptot. 250. 250. 250. 250. 250. 250. 250. 250. mW. Junction temperature Tj 150 °C. Operating temperature ..  Tags: 44s sot23 datasheet ts 40  BAS40-02L   BAS40	496.29 Kb	8 Pages	Original
	First line: BFR360F Silicon Transistor Preliminary data voltage/ current operation noise amplifiers Oscillators Pout noise figure: Abstract: .. TS 98 °C Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 .. 150 ..  Tags: BFR360*   BFR360F	140.15 Kb	8 Pages	Original
	First line: BAS40./BAS140W Silicon Schottky Diode General-purpose diode high-speed switching Circuit protection Voltage clamping High-level detecting mixing BAS140W BAS40-02L BAS40 Abstract: .. ≤ 127 °C BAS40-04 BAS40-04 , BAS40-06 BAS40-06 , TS ≤ 56 °C BAS40-06W BAS40-06W , TS ≤ 106 °C BAS40-05 BAS40-05 , TS ≤ 31 °C BAS40-05W BAS40-05W , TS ≤ 98 °C. Ptot. 250. 250. 250. 250. 250. 250. 250. mW. Junction temperature Tj 150 °C. Operating temperature range Top ..  Tags: datasheet ts 40  BAS40-02L   BAS140W	502.92 Kb	8 Pages	Original
	First line: BFR360F BFR360F Silicon Transistor* voltage/ current operation noise amplifiers Oscillators Pout noise figure: Pb-free (RoHS compliant) package Qualified according Q101 Short term description Abstract: .. TS ≤ 98 °C Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 .. 150 ..  Tags: BFR360F BFR360*   BFR360F	83.4 Kb	10 Pages	Original
	First line: BFR360F* BFR360F Silicon Transistor Preliminary data voltage/ current operation noise amplifiers Oscillators Pout noise figure: Abstract: .. TS 98 °C Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 .. 150 ..  Tags: BFR360F* BFR360F   BFR360F	214.15 Kb	10 Pages	Original
	First line: BFR360F* BFR360F Silicon Transistor noise amplifier current applications Collector design supports supply voltage oscillators noise figure Pb-free (RoHS compliant) package Qualified according Q101 (Electrostatic discharge) sensitive device, observe handling precaution! Abstract: .. TS ≤ 98 °C Ptot 210 mW Junction temperature TJ 150 °C Storage temperature TStg -55 ..  Tags: BFR360F*   BFR360F	543.74 Kb	11 Pages	Original
	First line: BAS40./BAS140W Silicon Schottky Diode General-purpose diode high-speed switching Circuit protection Voltage clamping High-level detecting mixing BAS140W BAS40-02L BAS40 Abstract: .. ≤ 127 °C BAS40-04 BAS40-04 , BAS40-06 BAS40-06 , TS ≤ 56 °C BAS40-06W BAS40-06W , TS ≤ 106 °C BAS40-05 BAS40-05 , TS ≤ 31 °C BAS40-05W BAS40-05W , TS ≤ 98 °C BAS40-07W BAS40-07W , TS ≤ 118 °C. Ptot. 250. 250. 250. 250. 250. 250. 250. 250. mW. Junction temperature Tj 150 °C. Operating ..  Tags: BAS40-02L   BAS140W	91.85 Kb	9 Pages	Original
	First line: BFR360F Silicon RFTransistor Preliminary data voltage/ current operation noise amplifiers Oscillators Pout noise figure: Abstract: .. Total power dissipation1 , TS = 98 °C Ptot 210 mW. Junction temperature Tj 150 °C. Ambient temperature TA -65 .. 150. Storage temperature Tstg -65 .. 150. Thermal Resistance. Junction - soldering ..  Tags: transistor bf 422 NPN  transistor bf 422   BFR360F	74.5 Kb	8 Pages	Original
	First line: M3D124 BFU540 SiGe wideband transistor Abstract: .. Ptot total power dissipation Ts ≤ 98 °C - -115 mW. hFE DC current gain IC = 40 mA; VCE = 2 V; T j = 25 °C 70 140 210. Gmax maximum power gain IC = 40 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 ° C - 20 - dB. NF noise figure IC = 2 mA ..  Tags:   BFU540	99.56 Kb	16 Pages	Original
	First line: transistor marking 47s BAS40./BAS140W Silicon Schottky Diode General-purpose diode high-speed switching Circuit protection Voltage clamping High-level detecting mixing BAS140W BAS40-02L BAS40 Abstract: .. ≤ 127 °C BAS40-04 BAS40-04 , BAS40-06 BAS40-06 , TS ≤ 56 °C BAS40-06W BAS40-06W , TS ≤ 106 °C BAS40-05 BAS40-05 , TS ≤ 31 °C BAS40-05W BAS40-05W , TS ≤ 98 °C BAS40-07W BAS40-07W , TS ≤ 118 °C. Ptot. 250. 250. 250. 250. 250. 250. 250. 250. mW. Junction temperature Tj 150 °C. Operating ..  Tags: transistor marking 47s BAS40-02L   BAS140W	302.2 Kb	15 Pages	Original
	First line: BAS40./BAS140W Silicon Schottky Diode General-purpose diode high-speed switching Circuit protection Voltage clamping High-level detecting mixing Pb-free (RoHS compliant) package Qualified according Q101 BAS140W BAS40-02L BAS40 Abstract: .. ≤ 127 °C BAS40-04 BAS40-04 , BAS40-06 BAS40-06 , TS ≤ 56 °C BAS40-06W BAS40-06W , TS ≤ 106 °C BAS40-05 BAS40-05 , TS ≤ 31 °C BAS40-05W BAS40-05W , TS ≤ 98 °C BAS40-07W BAS40-07W , TS ≤ 118 °C. Ptot. 250. 250. 250. 250. 250. 250. 250. 250. mW. Junction temperature Tj 150 °C. Operating ..  Tags: BAS40-02L   BAS140W	165.3 Kb	15 Pages	Original
	First line: NXP Bluetooth IC RF TRANSISTOR 10GHZ BFP740ESD BFP740ESD Robust High Performance Noise Bipolar Transistor Revision 1.0, 2010-06-29 Abstract: .. Total power dissipation Ptot – – 160 mW TS ≤ 98 °C. BFP740ESD BFP740ESD . Product Brief. Data Sheet 9 Revision 1.0, 2010-06-29. Table 2 Quick Reference AC Characteristics at TA = 25 °C Parameter Symbol Values Unit ..  Tags: BFP740ESD RF TRANSISTOR 10GHZ NXP Bluetooth IC   BFP740ESD	1431.23 Kb	29 Pages	Original
	First line: N193 JT2F Device Mbit/s Framer TXC-03702B DATA SHEET FEATURES Framer for: Recommendation G.704 NTT-specified 6312 kbit/s format NTT-specified technical reference cell relay interface Positive negative rail line side interface with clock inversion option B8ZS B6ZS codec line side rail interface Termi Abstract: .. TS 97 AND TS 98 EVERY FRAME. 1 768 769 784 785 786 788 789 769 784 785 786 787 788 789 768 1 787. TS 1 to 96 F-BITS TS 1 to 96 TS 97 & 98 F-BITS TS 97 & 98. FRAME 1 FRAME 2. 1. - 26 - TXC-03702B-MB TXC-03702B-MB . Ed. 2, January 1998. JT2F ..  Tags: txc 7a  N193   TXC-03702B	501.88 Kb	58 Pages	Original
	First line: XCK-L option txc 7a LIMING VOLTAGE RELAY LIMING RELAY XCKJ JT2F Device Mbit/s Framer TXC-03702B Framer for: Recommendation G.704 NTT-specified 6312 kbit/s format NTT-specified technical reference cell relay interface Abstract: .. jmruij ruuin n TS 97 AND TS 98 EVERY FRAME. "L..J L.. jinrui..m..JinnriJinnri..jui_iinnnnnnn i_r. • tcYC - tpWH tpWL XCK Input ..  Tags: XCKJ LIMING RELAY LIMING VOLTAGE RELAY txc 7a XCK-L option   datasheet abstract..	2242.3 Kb	46 Pages	OCR Scan
	First line: pcm multiplexer c166 programming c Infineon NFC Switching 20451 20471 24471 HTSI HTSI-L HTSI-XL Communications Abstract: .. TS 98. switi_031.emf. PEF 20451 / 20471 / 24471. Programming the Device. Preliminary Data Sheet 120 ..  Tags: Infineon NFC c166 programming c pcm multiplexer switi  IDC7 DSP JTAG  DELIC  68040*   datasheet abstract..	2000.76 Kb	164 Pages	Original
	First line: pcm multiplexer Infineon NFC SWITI Switching 20451 20471 24471 Version HTSI HTSI-L HTSI-XL Wired Communications Abstract: .. TS 98. switi_031.emf. PEF 20451 / 20471 / 24471. Programming the Device. Preliminary Data Sheet 120 ..  Tags: Infineon NFC pcm multiplexer switi  nfc passive  MTSI-XL  IDC7 DSP JTAG  68040*   datasheet abstract..	1978.74 Kb	164 Pages	Original

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