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ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 visit Texas Instruments

TRANSISTOR SMD 2X K

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR SMD MARKING CODE 2x

Abstract: smd transistor 2x SMD General Purpose Transistor (NPN) MMBT4401 SMD General Purpose Transistor (NPN) Features · NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data , 1 of 3 SMD General Purpose Transistor (NPN) MMBT4401 Electrical Characteristics (T Ambient , Page 2 of 3 SMD General Purpose Transistor (NPN) MMBT4401 Dimensions in mm SOT-23 How to , MMBT4401 Unit Marking Code 2X VCBO Collector-Base Voltage 60 V VCEO
Taitron Components
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TRANSISTOR SMD MARKING CODE 2x smd transistor 2x TRANSISTOR SMD 2x t SMD transistor 2x sot 23 TRANSISTOR SMD 2X K TRANSISTOR SMD 2X MIL-STD-202G 100MH

smd marking dt2

Abstract: b1103 Transistor · Higher Frequency Operation · Reduced Snubbing · Reduced Parts Count 1 N/C 3 Anode , noise and significantly lower switching losses in both the diode and the switching transistor. These , ­­­­ 2.0 0.07 300 1.7 40 ­­­­ ­­­­ Units °C K/W g (oz) 0.063 in. from Case (1.6mm , (0.09) 0.55 (0.02) 8.89 (0.35) 3X REF. 1.40 (0.055) 1.14 (0.045) 2X 1 0.46 , ) 2.08 (0.08) 2X 2.54 (0.10) 2X Conforms to JEDEC Outline D2PAK Dimensions in millimeters and
International Rectifier
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HFA08TB120S SMD-220 smd marking dt2 b1103 SMD Transistor Marking Code 335 PD-20603

smd TRANSISTOR code marking 2F

Abstract: smd dt2 Specified at Operating Conditions (K) VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A Qrr , Switching Transistor · Higher Frequency Operation · Reduced Snubbing · Reduced Parts Count (N/C) 1 , switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count , "#Typical Socket Mount 2 K/W HFA06TB120S .Series Bulletin PD-20602 rev. C 12/00 100 1000 , (0.09) 0.55 (0.02) 8.89 (0.35) 3X REF. 1.40 (0.055) 1.14 (0.045) 2X 1 0.46
International Rectifier
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smd TRANSISTOR code marking 2F smd dt2 TRANSISTOR SMD MARKING CODE 304 a SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD MARKING CODE 207
Abstract: ) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD , DF N2 020 D-3 PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 , 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package , NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2 , Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In NXP Semiconductors
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PBSS4330PAS AEC-Q101
Abstract: ) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD , DF N2 020 D-3 PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 11 September 2014 , 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package , Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning , Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In NXP Semiconductors
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TRANSISTOR SMD 2X K

Abstract: smd transistor 2x Transistors SMD Type NPN Switching Transistor PXT4401 Features High current (max. 600 mA , Thermal resistance from junction to soldering point *1 *2 *3 250 156 113 K/W Rth(j-s) 30 K/W *1 Device mounted on a printed-circuit board, single-sided copper, tin-plated and , SMD Type PXT4401 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min , Marking 2 2X www.kexin.com.cn 0.02. Kexin
Kexin
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SMD TRANSISTOR MARKING 2X smd transistor js smd marking 2x 2X Smd marking
Abstract: 83B PDTA144EMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 47 k Rev. 2 â , Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD , PNP resistor-equipped transistor; R1 = 47 k , R2 = 47 k 2. Pinning information Table 2. Pinning , transistor; R1 = 47 k , R2 = 47 k 5. Limiting values Table 5. Limiting values In accordance with , PDTA144EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 47 k , R2 = 47 k 6. Thermal NXP Semiconductors
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PDTC144EMB
Abstract: PDTA113ZMB 83B PNP resistor-equipped transistor; R1 = 1 k, R2 = 10 k Rev. 1 - 21 June 2012 , Semiconductors PDTA113ZMB PNP resistor-equipped transistor; R1 = 1 k, R2 = 10 k 2. Pinning information , PDTA113ZMB PNP resistor-equipped transistor; R1 = 1 k, R2 = 10 k 5. Limiting values Table 5. Symbol VCBO , PDTA113ZMB PNP resistor-equipped transistor; R1 = 1 k, R2 = 10 k 6. Thermal characteristics Table 6 , transistor; R1 = 1 k, R2 = 10 k 7. Characteristics Table 7. Symbol ICBO ICEO IEBO hFE VCEsat VI(off) VI NXP Semiconductors
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PDTC113ZMB
Abstract: 83B PDTA113EMB SO T8 PNP resistor-equipped transistor; R1 = 1 k , R2 = 1 k Rev. 1 â'" 4 , Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package , resistor-equipped transistor; R1 = 1 k , R2 = 1 k 2. Pinning information Table 2. Pinning information Pin , PNP resistor-equipped transistor; R1 = 1 k , R2 = 1 k 6. Thermal characteristics Table 6 , Semiconductors PNP resistor-equipped transistor; R1 = 1 k , R2 = 1 k 7. Characteristics Table 7 NXP Semiconductors
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PDTC113EMB
Abstract: PDTA144EMB 83B PNP resistor-equipped transistor; R1 = 47 k, R2 = 47 k Rev. 1 - 25 April 2012 , PNP resistor-equipped transistor; R1 = 47 k, R2 = 47 k 2. Pinning information Table 2. Pin 1 2 3 I , resistor-equipped transistor; R1 = 47 k, R2 = 47 k 5. Limiting values Table 5. Symbol VCBO VCEO VEBO VI IO ICM , PDTA144EMB PNP resistor-equipped transistor; R1 = 47 k, R2 = 47 k 6. Thermal characteristics Table 6 , transistor; R1 = 47 k, R2 = 47 k 7. Characteristics Table 7. Symbol ICBO ICEO IEBO hFE VCEsat VI(off) VI NXP Semiconductors
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Abstract: 83B PDTC123YMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k Rev. 1 â , Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD , Semiconductors NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k 2. Pinning information Table 2 , resistor-equipped transistor; R1 = 2.2 k , R2 = 10 k 5. Limiting values Table 5. Limiting values In , transistor; R1 = 2.2 k , R2 = 10 k 006aab603 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 NXP Semiconductors
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PDTA123YMB
Abstract: PDTC123EMB 83B NPN resistor-equipped transistor; R1 = 2.2 k, R2 = 2.2 k Rev. 1 - 3 April 2012 , Semiconductors PDTC123EMB NPN resistor-equipped transistor; R1 = 2.2 k, R2 = 2.2 k 2. Pinning information , PDTC123EMB NPN resistor-equipped transistor; R1 = 2.2 k, R2 = 2.2 k 5. Limiting values Table 5. Symbol , transistor; R1 = 2.2 k, R2 = 2.2 k 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal , PDTC123EMB NPN resistor-equipped transistor; R1 = 2.2 k, R2 = 2.2 k 7. Characteristics Table 7. Symbol NXP Semiconductors
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PDTA123EMB
Abstract: 83B PDTA113ZMB SO T8 PNP resistor-equipped transistor; R1 = 1 k , R2 = 10 k Rev. 1 â , Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD , PNP resistor-equipped transistor; R1 = 1 k , R2 = 10 k 2. Pinning information Table 2. Pinning , transistor; R1 = 1 k , R2 = 10 k 5. Limiting values Table 5. Limiting values In accordance with the , PDTA113ZMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 1 k , R2 = 10 k 6. Thermal NXP Semiconductors
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Abstract: PDTC144WMB 83B NPN resistor-equipped transistor; R1 = 47 k, R2 = 22 k Rev. 1 - 2 July 2012 , Semiconductors PDTC144WMB NPN resistor-equipped transistor; R1 = 47 k, R2 = 22 k 2. Pinning information , PDTC144WMB NPN resistor-equipped transistor; R1 = 47 k, R2 = 22 k 5. Limiting values Table 5. Symbol , PDTC144WMB NPN resistor-equipped transistor; R1 = 47 k, R2 = 22 k 103 duty cycle = Zth(j-a) (K/W) 102 1 , transistor; R1 = 47 k, R2 = 22 k 103 hFE 006aad104 10-1 006aad105 (1) (2) (3) VCEsat (V NXP Semiconductors
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PDTA144WMB

nxp MARKING CC

Abstract: PDTA144VMB 83B PNP resistor-equipped transistor; R1 = 47 k, R2 = 10 k Rev. 1 - 26 June 2012 , Semiconductors PDTA144VMB PNP resistor-equipped transistor; R1 = 47 k, R2 = 10 k 2. Pinning information , PDTA144VMB PNP resistor-equipped transistor; R1 = 47 k, R2 = 10 k 5. Limiting values Table 5. Symbol , PDTA144VMB PNP resistor-equipped transistor; R1 = 47 k, R2 = 10 k 103 duty cycle = Zth(j-a) (K/W) 102 1 , mV V V k pF MHz - [1] Characteristics of built-in transistor. PDTA144VMB All
NXP Semiconductors
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nxp MARKING CC PDTC144VMB
Abstract: 83B PDTA144VMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 10 k Rev. 1 â , Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD , Semiconductors PNP resistor-equipped transistor; R1 = 47 k , R2 = 10 k 2. Pinning information Table 2 , resistor-equipped transistor; R1 = 47 k , R2 = 10 k 5. Limiting values Table 5. Limiting values In , transistor; R1 = 47 k , R2 = 10 k 006aab603 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 NXP Semiconductors
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Abstract: 83B PDTA124XMB SO T8 PNP resistor-equipped transistor; R1 = 22 k , R2 = 47 k Rev. 1 â , Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD , Semiconductors PNP resistor-equipped transistor; R1 = 22 k , R2 = 47 k 2. Pinning information Table 2 , resistor-equipped transistor; R1 = 22 k , R2 = 47 k 5. Limiting values Table 5. Limiting values In , transistor; R1 = 22 k , R2 = 47 k 006aab603 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 NXP Semiconductors
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PDTC124XMB
Abstract: 83B PDTC124XMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = 47 k Rev. 1 â , Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD , Semiconductors NPN resistor-equipped transistor; R1 = 22 k , R2 = 47 k 2. Pinning information Table 2 , resistor-equipped transistor; R1 = 22 k , R2 = 47 k 5. Limiting values Table 5. Limiting values In , transistor; R1 = 22 k , R2 = 47 k 006aab603 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 NXP Semiconductors
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Abstract: 83B PDTA115EMB SO T8 PNP resistor-equipped transistor; R1 = 100 k , R2 = 100 k Rev. 1 â , Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD , Semiconductors PNP resistor-equipped transistor; R1 = 100 k , R2 = 100 k 2. Pinning information Table 2 , resistor-equipped transistor; R1 = 100 k , R2 = 100 k 5. Limiting values Table 5. Limiting values In , transistor; R1 = 100 k , R2 = 100 k 006aab603 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 NXP Semiconductors
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PDTC115EMB
Abstract: PDTA124XMB 83B PNP resistor-equipped transistor; R1 = 22 k, R2 = 47 k Rev. 1 - 11 June 2012 , Semiconductors PDTA124XMB PNP resistor-equipped transistor; R1 = 22 k, R2 = 47 k 2. Pinning information , PDTA124XMB PNP resistor-equipped transistor; R1 = 22 k, R2 = 47 k 5. Limiting values Table 5. Symbol , PDTA124XMB PNP resistor-equipped transistor; R1 = 22 k, R2 = 47 k 103 duty cycle = Zth(j-a) (K/W) 102 1 , mV V V k pF MHz - [1] Characteristics of built-in transistor. PDTA124XMB All NXP Semiconductors
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