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TRANSISTOR SMD 2X K

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SMD General Purpose Transistor (NPN) MMBT4401 MMBT4401 SMD General Purpose Transistor (NPN) Features · NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data , 1 of 3 SMD General Purpose Transistor (NPN) MMBT4401 MMBT4401 Electrical Characteristics (T Ambient , Page 2 of 3 SMD General Purpose Transistor (NPN) MMBT4401 MMBT4401 Dimensions in mm SOT-23 How to , MMBT4401 MMBT4401 Unit Marking Code 2X VCBO Collector-Base Voltage 60 V VCEO ... Taitron Components
Original
datasheet

3 pages,
221.14 Kb

smd transistor 2x 4 FR MARKING SMD TRANSISTOR TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE TRANSISTOR SMD 2X F Marking Code 2X MARKING CODE SMD IC TRANSISTOR SMD 2X sot23 TRANSISTOR SMD MARKING CODE UA smd transistor marking 26 SMD TRANSISTOR MARKING 2X MMBT4401 TRANSISTOR SMD MARKING CODE 16 MMBT4401 2x smd transistor MMBT4401 TRANSISTOR SMD fr MMBT4401 TRANSISTOR SMD 2X MMBT4401 TRANSISTOR SMD 2X K MMBT4401 SMD transistor 2x sot 23 MMBT4401 TRANSISTOR SMD 2x t MMBT4401 smd transistor 2x MMBT4401 TRANSISTOR SMD MARKING CODE 2x MMBT4401 MMBT4401 MMBT4401 TEXT
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Abstract: Transistor · Higher Frequency Operation · Reduced Snubbing · Reduced Parts Count 1 N/C 3 Anode , noise and significantly lower switching losses in both the diode and the switching transistor. These , ­­­­ 2.0 0.07 300 1.7 40 ­­­­ ­­­­ Units °C K/W g (oz) 0.063 in. from Case (1.6mm , (0.09) 0.55 (0.02) 8.89 (0.35) 3X REF. 1.40 (0.055) 1.14 (0.045) 2X 1 0.46 , ) 2.08 (0.08) 2X 2.54 (0.10) 2X Conforms to JEDEC Outline D2PAK Dimensions in millimeters and ... International Rectifier
Original
datasheet

4 pages,
89.14 Kb

SMD-220 SMD Transistor Marking Code 335 HFA08TB120S smd marking dt2 PD-20603 TEXT
datasheet frame
Abstract: Specified at Operating Conditions (K) VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A Qrr , Switching Transistor · Higher Frequency Operation · Reduced Snubbing · Reduced Parts Count (N/C) 1 , switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count , "#Typical Socket Mount 2 K/W HFA06TB120S HFA06TB120S .Series Bulletin PD-20602 PD-20602 rev. C 12/00 100 1000 , (0.09) 0.55 (0.02) 8.89 (0.35) 3X REF. 1.40 (0.055) 1.14 (0.045) 2X 1 0.46 ... International Rectifier
Original
datasheet

8 pages,
146.83 Kb

20602 HFA06TB120S IRFP250 SMD-220 transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 207 TRANSISTOR SMD MARKING CODE 304 h transistor SMD MARKING CODE HF TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD MARKING CODE 304 a SMD TRANSISTOR MARKING 9bb smd dt2 smd TRANSISTOR code marking 2F TEXT
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Abstract: ) transistor, encapsulated in an ultra thin DFN2020D-3 DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD , DF N2 020 D-3 PBSS5330PAS PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 , 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package , NXP Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2 , Semiconductors 30 V, 3 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In ... NXP Semiconductors
Original
datasheet

18 pages,
245.82 Kb

PBSS5330PAS TEXT
datasheet frame
Abstract: ) transistor, encapsulated in an ultra thin DFN2020D-3 DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD , DF N2 020 D-3 PBSS4330PAS PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 11 September 2014 , 175 °C Reduced Printed-Circuit Board (PCB) area requirements Leadless small SMD plastic package , Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning , Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In ... NXP Semiconductors
Original
datasheet

18 pages,
243.88 Kb

PBSS4330PAS TEXT
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Abstract: Transistors SMD Type NPN Switching Transistor PXT4401 PXT4401 Features High current (max. 600 mA , Thermal resistance from junction to soldering point *1 *2 *3 250 156 113 K/W Rth(j-s) 30 K/W *1 Device mounted on a printed-circuit board, single-sided copper, tin-plated and , SMD Type PXT4401 PXT4401 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min , Marking 2 2X www.kexin.com.cn 0.02. Kexin ... Kexin
Original
datasheet

2 pages,
55.11 Kb

smd marking 2x PXT4401 2X Smd marking smd transistor js SMD TRANSISTOR MARKING 2X TRANSISTOR SMD 2X smd transistor 2x TRANSISTOR SMD 2X K TEXT
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Abstract: 83B PDTA144EMB PDTA144EMB SO T8 PNP resistor-equipped transistor; R1 = 47 k , R2 = 47 k Rev. 2 â , Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD , PNP resistor-equipped transistor; R1 = 47 k , R2 = 47 k 2. Pinning information Table 2. Pinning , transistor; R1 = 47 k , R2 = 47 k 5. Limiting values Table 5. Limiting values In accordance with , PDTA144EMB PDTA144EMB NXP Semiconductors PNP resistor-equipped transistor; R1 = 47 k , R2 = 47 k 6. Thermal ... NXP Semiconductors
Original
datasheet

12 pages,
109.86 Kb

PDTA144EMB TEXT
datasheet frame
Abstract: PDTA113ZMB PDTA113ZMB 83B PNP resistor-equipped transistor; R1 = 1 k, R2 = 10 k Rev. 1 - 21 June 2012 , Semiconductors PDTA113ZMB PDTA113ZMB PNP resistor-equipped transistor; R1 = 1 k, R2 = 10 k 2. Pinning information , PDTA113ZMB PDTA113ZMB PNP resistor-equipped transistor; R1 = 1 k, R2 = 10 k 5. Limiting values Table 5. Symbol VCBO , PDTA113ZMB PDTA113ZMB PNP resistor-equipped transistor; R1 = 1 k, R2 = 10 k 6. Thermal characteristics Table 6 , transistor; R1 = 1 k, R2 = 10 k 7. Characteristics Table 7. Symbol ICBO ICEO IEBO hFE VCEsat VI(off) VI ... NXP Semiconductors
Original
datasheet

12 pages,
496.94 Kb

PDTA113ZMB TEXT
datasheet frame
Abstract: PDTA144EMB PDTA144EMB 83B PNP resistor-equipped transistor; R1 = 47 k, R2 = 47 k Rev. 1 - 25 April 2012 , PNP resistor-equipped transistor; R1 = 47 k, R2 = 47 k 2. Pinning information Table 2. Pin 1 2 3 I , resistor-equipped transistor; R1 = 47 k, R2 = 47 k 5. Limiting values Table 5. Symbol VCBO VCEO VEBO VI IO ICM , PDTA144EMB PDTA144EMB PNP resistor-equipped transistor; R1 = 47 k, R2 = 47 k 6. Thermal characteristics Table 6 , transistor; R1 = 47 k, R2 = 47 k 7. Characteristics Table 7. Symbol ICBO ICEO IEBO hFE VCEsat VI(off) VI ... NXP Semiconductors
Original
datasheet

12 pages,
710.03 Kb

PDTA144EMB TEXT
datasheet frame
Abstract: 83B PDTA113EMB PDTA113EMB SO T8 PNP resistor-equipped transistor; R1 = 1 k , R2 = 1 k Rev. 1 — 4 , Transistor (RET) in a leadless ultra small DFN1006B-3 DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package , resistor-equipped transistor; R1 = 1 k , R2 = 1 k 2. Pinning information Table 2. Pinning information Pin , PNP resistor-equipped transistor; R1 = 1 k , R2 = 1 k 6. Thermal characteristics Table 6 , Semiconductors PNP resistor-equipped transistor; R1 = 1 k , R2 = 1 k 7. Characteristics Table 7 ... NXP Semiconductors
Original
datasheet

12 pages,
113.12 Kb

PDTA113EMB TEXT
datasheet frame

Archived Files

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this way the power dissipation in - side the device is low enough to allow the use of small SMD VBAT1. 23 GATE Driver for external Power MOS transistor. 21 VF Feedback input for DC/DC converter transistor (P-Channel) in order to generate the negative battery voltage needed for device operation. The just equal to the self generated battery with 2x(1500W+Rp) Where: "Open": the line port termination TIP2/RING2 AC impedance will be 2x(1500 W + Rp) or high impedance. Active D0 D1 D2 P1 P2 DET
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6466-v3.htm
STMicroelectronics 25/05/2000 48.43 Kb HTM 6466-v3.htm
way the power dissipation in - side the device is low enough to allow the use of small SMD package MOS transistor. 21 VF Feedback input for DC/DC converter controller. 22 CLK Power Switch Controller an ex - ternal power MOS transistor (P-Channel) in order to generate the negative battery voltage just equal to the self generated battery with 2x(1500W+Rp) Where: "Open": the line port termination is as the DC one. Depending on the P1, P2 bits the TIP1/RING1 and TIP2/RING2 AC impedance will be 2x
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6466.htm
STMicroelectronics 20/10/2000 50.75 Kb HTM 6466.htm
No abstract text available
/download/59539157-592504ZC/price-11.zip ()
NEDIS 28/02/2001 1026.63 Kb ZIP price-11.zip
allow the use of small SMD package (TQFP44 TQFP44). Other useful characteristics for application in the WLL DC/DC converter. Must be shorted to VBAT1. 23 GATE Driver for external Power MOS transistor. 21 VF an ex - ternal power MOS transistor (P-Channel) in order to generate the negative battery voltage self generated battery with 2x(1500W+Rp) Where: "Open": the line port termination is in high Depending on the P1, P2 bits the TIP1/RING1 and TIP2/RING2 AC impedance will be 2x(1500 W + Rp) or high
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6466-v2.htm
STMicroelectronics 14/06/1999 46.24 Kb HTM 6466-v2.htm
No abstract text available
/download/63482201-592495ZC/price-04.zip ()
NEDIS 22/02/2001 1894.94 Kb ZIP price-04.zip
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NEDIS 26/02/2001 1872.34 Kb ZIP price-07.zip
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NEDIS 28/02/2001 1026.63 Kb ZIP price-13.zip
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/download/38266838-592491ZC/price-00.zip ()
NEDIS 28/02/2001 1026.63 Kb ZIP price-00.zip
allow the use of small SMD package (TQFP44 TQFP44). Other useful characteristics for application in the WLL DC/DC converter. Must be shorted to VBAT1. 23 GATE Driver for external Power MOS transistor. 21 VF an ex - ternal power MOS transistor (P-Channel) in order to generate the negative battery voltage self generated battery with 2x(1500W+Rp) Where: "Open": the line port termination is in high Depending on the P1, P2 bits the TIP1/RING1 and TIP2/RING2 AC impedance will be 2x(1500 W + Rp) or high
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6466-v1.htm
STMicroelectronics 02/04/1999 46.28 Kb HTM 6466-v1.htm