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TRANSISTOR BC 448

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A , SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package , %. Continental Device India Limited Data Sheet Page 2 of 4 BC 446, A, B BC 448, A, B BC 450, A, B TO , of 4 Notes BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package Disclaimer The , Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions in mm unless specified otherwise Continental Device India
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BC446 BC448 BC450 transistors BC 446 TRANSISTOR BC 450 pnp C-120
Abstract: SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package , Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package ELECTRICAL CHARACTERISTICS (Ta , India Limited Data Sheet Page 2 of 4 BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic , of 4 Notes BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package Disclaimer The Continental Device India
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transistor BC 153 BC 450 BC448A
Abstract: SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package , EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package ELECTRICAL , India Limited Data Sheet Page 2 of 4 BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic , 13. 5" 32K 12. 5 kgs Page 3 of 4 Notes BC 446, A, B BC 448, A, B BC 450, A, B TO , Transistor and Adhesive Tape Visible 2000 pcs./Ammo Pack All dimensions in mm unless specified otherwise Continental Device India
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Abstract: ) - DIA. B.C. GROUND 50-OHM OUTPUT 'Measured in a 50 -ohm system at +15 Vdc unless otherwise , .304 .372 .448 ANG -132 -137 -132 -132 -137 -144 -156 -167 -180 166 MAG 2.536 2.573 2.577 2.571 2.594 , .130°C/W Transistor Power Dissipation P d .0.064 W Junction Temperature Rise Above -
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WJ-CA70 WJ-A70 SMA70 1-800-WJ1-4401
Abstract: , cutoff current = 1 00X ) Collector cutoff current ( " VcE = 0 5 VcEmax) ( - V c b = VfcBmax) ( - V 'BC = , « = 2 5 °C in * 10' 2 3V 0 0.4 OjB 12 *CE Wt 1.6V -*^BE 448 1 82 5 0-14 -
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transistor BD 680 transistor BD 677 bd678 TRANSISTOR Bd 137 676/BD 678/BD 680/BD Q62702-D239 Q62702-D241 Q62702-D243
Abstract: 0.300 ±0.010 {7.62 ± 0.25) DIA. B.C. Frequency (Min.) Small Signal Gain (Min.) Gain Flatness (Max , 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 S11 MAG .448 .247 .058 .040 .030 .030 .044 .050 .058 .071 , . 45°C/W Transistor Power Dissipation P d .0.448 W Junction Temperature Rise -
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Transistor BC 457 50QH bc 149 transistor ER-23 WJ-la17 WJ-LA17/SMLA17 50-QHM CLA17
Abstract: im VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR m R N 5 R G S E R IE S IOUTLINE The RN5RG Series are voltage regulator ICs with an external power transistor with high output voltage accu , Number t t t a bc t d Code Contents a Setting Output Voltage (V o ut ): Stepwise , Description GND Ground Pin Input Pin Output Pin External Transistor Drive Pin (Neh Open Drain Output , Transistor. Use External PNP Transistor of a low saturation type, with an hFE With respect to Test Circuits -
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RN5RG30A
Abstract: gate, quadruple polysilicon CMOS, 1 transistor memory cell â'¢ 524,288-word x 8-bit organization â , b72424D ODlfllBS i n 448 O K I Semiconductor MSM514800/L A C Characteristics (2/2) (Vcc = 5V  , Hidden Refresh Read Cycle J bc_ J rp I ras J bC_ tRAS ÌRP. tAR R A S, 7 tRCD -
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MSM514800 288-W MSM514800/ 28-P-400 ZIP28-P-400 MSM514800/L-70 MSM514800/L-80
Abstract: 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 *BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page *BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 *BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 *BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO-39 750 40 40-100 100 1 1000/100 50 307 BC 140 cl.10 TO-39 750 40 60-160 100 1 1000/100 50 307 BC 140 -
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brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals 3154-S
Abstract: ) C ata lo g u e 183 T2 184T2 185T2 BC 107 ec 108 BC BC BC BC BC 109 140 141 160 161 TPu 75 TPu , 849 367 367 367 373 373 379 379 385 385 391 391 395 395 BC 546 BC 547 BC 548 BC 549 BC 550 BC 556 BC 557 BC 558 BC 559 BC 560 BC 635 BC 636 BC 637 BC 638 BC 639 BC 640 BCW 29 BCW 30 BCW 31 BCW 32 BCW , 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 75 BC 177 BC 178 BC 179 BC 182 BC 183 BC 184 BC190A, B BC 211 BC 211 A BC 212 BC 213 BC 214 BC 215 B BC 237 BC 238 BC 239 BC 264 -
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3866S BF247 equivalent Triac GK BC547E TI Small Signal FET Catalogue SP309
Abstract: 419 BB 515 BB 619 BC 516 MPSA 63 MPSA 64 BC 516 BC 517 BC 546 BC 547 BC 548 BC 549 BC 550 BC 556 BC 557 BC 558 BC 559 BC 560 BC 618 BCX 58 BCX 59 BCX 78 BCX 79 BCX 73 BCX 74 BCX 75 BCX 76 BC 327 BC 328 BCX 22 BCX 23 MPS 2222 MPS 2222 A MPS 2907 MPS 2907 A 2N 4126 , 27 BC 846 bC b4/ BC 848 BC 849 BC 850 BC 856 BC 857 BC 858 BC 859 BC 860 BCV 47 BCW 60 BCX 70 BCW 61 BCX 71 BCW 65 BCW 66 BCW 67 BCW 68 BC 807 BC 808 BCX 41 BCX 42 SMBT 2222 -
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transistor Bc 949 datenblatt TRANSISTOR 131-6 BJ 946 TRANSISTOR BC 545 DIODE smd marking 22-16 transistor smd marking BA rn transistor bf 175 B132-H6450-X-X-7400 B3-B3789 B3789-X-X-7600 B123- B6253-X-X-7600 B132-B6483-X-X-7400
Abstract: IC O N PLANAR NPN AUDIO DRIVER BC 115 The BC115 is a silicon planar epitaxial NPN transistor , IC O N PLANAR PNP GENERAL PURPOSE TRANSISTOR BC 116A The BC116A is a silicon planar epitaxial , mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier , transistor in a. Jedec TO-72 metal case. It is designed for use in AG C prestages up to 260 MHz. ABSOLUTE , F 139 is a germanium mesa PNP transistor in a Je d e c TO-72 metal case. It is particularly designed -
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APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM AF106
Abstract: transistor outputs (NPN open collector) T1-FLK: 3 transistor outputs (NPN open collector) and RS-485 T1-L1: 3 transistor outputs (NPN open collector) and DC current (0 to 20 mA, 4 to 20 mA) T1-L2: 3 transistor outputs (NPN open collector) and DC voltage (0 to 5 V, 1 to 5 V, 0 to 10 V) T2: 3 transistor outputs (PNP open collector) T2-FLK: 3 transistor outputs (PNP open collector) and RS-485 3. Option , V, 1 to 5 V, 0 to 10 V) K3GN-NDC-L2-400 24 VDC 3 transistor outputs (NPN None open collector OMRON
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moving message display using 7 segment dc display K3MA-J
Abstract: outputs (SPST-NO) and DC voltage (0 to 5 V, 1 to 5 V, 0 to 10 V) T1: 3 transistor outputs (NPN open collector) T1-FLK: 3 transistor outputs (NPN open collector) and RS-485 T1-L1: 3 transistor outputs (NPN open collector) and DC current (0 to 20 mA, 4 to 20 mA) T1-L2: 3 transistor outputs (NPN open collector) and DC voltage (0 to 5 V, 1 to 5 V, 0 to 10 V) T2: 3 transistor outputs (PNP open collector) T2-FLK: 3 transistor outputs (PNP open collector) and RS-485 3. Option None: None -400: Normally energized relays 4 -
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transistor E111 DIGITAL PANEL METER K3GN-ND
Abstract: The Transistor and Diode Data Book for Design Engineers (Volume II) Northern European , Texas Instrum ents Lim ited THE TRANSISTOR AN D DIO DE D A T A BOOK VO LUME II Since 1954 when Texas Instruments introduced the first silicon transistor to the market place and later with the , Transistor and Diode Data Books for Design Engineers a useful addition to your Technical Library. CONTENTS TYPE NUMBER INDEX Page 7 GLOSSARY Page 13 TRANSISTOR SELECTION GUIDES Page -
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equivalent of transistor bc214 BF257 Texas TIS43 TIS61 TIS70 transistor bc 207 npn BS9300-C-738 BS9300-C-669 CV7671 BS9300-C-671 BS9300-C-670 V7672
Abstract: transistors Transistor arrays Medium-power transistors Power transistors Resistor-equipped transistors & arrays Transistors Transistor arrays Switching transistors Low-power transistors Medium-power transistors , 2PA1015Y BC177 BC177A BC177B BC307 BC307B BC327 BC327A BC327-16 BC327-25 BC.327-40 BC328 BC328-16 BC328 , LEADED DEVICES (continued) NPN GENERAL PURPOSE TRANSISTOR ARRAYS TYPE NUMBER BCY87 BCY88 BCY89 VCEO max , (continued) NPN GENERAL PURPOSE TRANSISTOR ARRAYS TYPE NUMBER BC847BS BCV61 BCV61A BCV61B BCV61C BCV63 BCV63B -
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2PC945K 2PC945Q BC337 TRANSISTOR BC 448 smd transistor TO-92 bc108 transistor MPSA77 smd transistor npn 491 JA101P transistor pn2222 2N2484 2N4124 2N5088 2PC945 2PC945P
Abstract: 0 8 Transistor Data Tables 4 BC 178 P+ 1 3 4 5 6 7 8 9 10 11 Type M n fr. Ma PI Gb , 100 4 ,1 9 ,2 0 ,2 2 ) ,k p l. B C 3 3 7 P Transistor Data Tables 6 BC 328+ 4 Typo M n fr .  , J J field-effect transistor ^ m J transistor l MOS field-effect transistor / Type num ber , * A raw material germanium B raw material silicon second letter C transistor for applications in AF range (Rlh >15° C/W) JC D power transistor for applications in AF range (FtlhJC 15° C/W) < F RF -
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KPL 3009 germanium 2N3924 transistor bc 5488 germanium transistor BSX12 C9/C10
Abstract: ) hFE = 10 Siemens Aktiengesellschaft 293 PNP Silicon Darlington Transistor BC 516 High , f (VEB, VCB) Siemens Aktiengesellschaft 321 NPN Silicon Darlington Transistor BC 517 , Transistors BC 257 . BC 259 High current gain q Low collector-emitter saturation voltage q Complementary types: BC 167, BC 168, BC 169 (NPN) q 1 3 2 Type Marking Ordering Code BC 257 BC 257 A BC 257 B BC 258 BC 258 A BC 258 B BC 258 C BC 259 BC 259 B BC 259 C ­ Siemens
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isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor Transistors Diodes smd A7H Q62702-A772 Q62702-A731 Q62702-A773
Abstract: high transistor densities are achieved by the use of a special array architecture, along with a , arrays of transistor pairs. Macro cells, which are the basic building blocks of logic design, are comprised of one or more transistor pairs in the arrays. All VGT200 Series gate arrays use the same transistor array and I/O cell structure. Thus, the same macros can be used throughout the VGT200 Series , ,800 10,140 152 VGT200042 42,632 12,790 172 VGT200056 56,448 16,934 196 -
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Abstract: 's proprietary Continuous Gate Technology. By utilizing Continuous Gate technology, in which high transistor , electrical components that are organized as structures of continuous arrays of transistor pairs. Macro cells, which are the basic building blocks of logic design, are comprised of one or more transistor pairs in the arrays. All VGT200 Series gate arrays use the same transistor array and I/O cell structure. Thus , 172 VGT200056 56,448 16,934 196 VGT200073 73,728 22,118 224 VGT200109 109,512 32,854 272 VGT200145 -
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PT6001 7474 d-flip flop PT6011 PT6021 VLSI Technology Kt 0912
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