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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

TRANSISTOR j412

Catalog Datasheet MFG & Type PDF Document Tags

VHB40-28F

Abstract: TRANSISTOR j412 VHB40-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability. PACKAGE STYLE .380 4L FLG B .112 x 45° A E C Ø.125 NOM. FULL R J FEATURES: .125 · 175 MHz 28 , j7.05 4.45 + j5.40 5.25 + j4.42 5.45 + j4.12 A D V A N C E D S E M I C O N D U C T O R, I N C
Advanced Semiconductor
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ASI10726 TRANSISTOR j412 transistor J132 J442 J142 J412 J705
Abstract: 412DD DPDT relay with internal transistor driver and coil transient suppression diode 412T , internal silicon suppression diode and transistor driver. This hybrid package reduces required PC board , Voltage (Vdc) 0.3 min. 412T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , (8.51) DIA. MAX. 10 TRANSISTOR BASE CONNECTION FOR 412T ONLY .035 (.89) ± .010 (0.25) 9 , , ER412D, ER412DD J412, J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420 Teledyne Relays
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ER411M3-12A 722XM3-26 ER411T ER412 ER412T ER421

J412

Abstract: 432T-26 polarity reversal protection 432DD DPDT relay with internal transistor driver and coil transient , protection. The hybrid 432T relay has an internal silicon suppression diode and a transistor driver. This , ) 0.3 min. 432T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , (0.08) .335 (8.51) DIA. MAX. TRANSISTOR BASE CONNECTION FOR 432T ONLY .035 (.89) ±.010 , ER412, ER412D, ER412DD J412, J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420
Teledyne Relays
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432T-26 j114dd 432D 432T 432T-5 Teledyne Relays 28vdc ER422 ER431T ER432 ER432T 712TN RF300

TRANSISTOR j412

Abstract: 712D-5 relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION , and transistor driver. The integrated packaging of the relay with its associated semiconductor , ) (@25°C & lc = 100 A) (Vdc) 712TN Transistor Characteristics 2.0 max 60 min. 0.3 min 6.0 min 60 , ) TRANSISTOR BASE CONNECTION FOR 712TN ONLY WIRE LEAD: .75 (19.05) MIN. +.002 (.05) .017 (.43) ­.001 , ER412, ER412D, ER412DD J412, J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420
Teledyne Relays
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712D-5 5 pin 30 amp relay 712-12 712D-26 TELEDYNE RELAYS j412 dpdt relay RF303 RF341 RF312 RF310 RF313 RF320

J412

Abstract: TRANSISTOR j412 412DD DPDT relay with internal transistor driver and coil transient suppression diode 412T , relay features an internal silicon suppression diode and transistor driver. This hybrid package , . 412T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min. Characteristics , TRANSISTOR BASE CONNECTION FOR 412T ONLY .035 (.89) ± .010 (0.25) 9 412 412DD 412D 412T , ] .200 [5.08] .393 (9.99) ER411T ER412, ER412D, ER412DD J412, J412D, J412DD .100 [2.54
Teledyne Relays
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Teledyne 412D ER134D M4 Teledyne Relays 412 teledyne relay 172 J411 j422d RF323 ER411 ER431 RF311 RF331 ER116C

J412

Abstract: TRANSISTOR j412 411DD SPDT relay with internal transistor driver and coil transient suppression diode 411T , relay features an internal silicon suppression diode and transistor driver. This hybrid package , 100 min. Base Turn Off Voltage (Vdc) 0.3 min. 411T Transistor Emitter-base breakdown Voltage , ] .100 [2.54] .200 [5.08] .393 (9.99) ER411T ER412, ER412D, ER412DD J412, J412D, J412DD , , ER412, ER412D ER412DD, J412, J412D, J412DD ER412T, J412T 712, 712D, 712TN ER431T, J431T, ER432
Teledyne Relays
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411D RF300 1d military relay teledyne J114D Teledyne Relays 411 ER136C RF180 RF100 RF103 ER114 ER134

transistor 431t

Abstract: h a 431 transistor reversal protection 431DD SPDT relay with internal transistor driver and coil transient suppression , relay features an internal silicon suppression diode and transistor driver. This hybrid package , ) 0.3 min. 431T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , ) .300 [7.62] .100 [2.54] .200 [5.08] .393 (9.99) ER411T ER412, ER412D, ER412DD J412 , ] SQ ER411T, J411T, ER412, ER412D ER412DD, J412, J412D, J412DD ER412T, J412T 712, 712D, 712TN
Teledyne Relays
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transistor 431t h a 431 transistor 431T transistor w 431 lm 431 DAtasheet a 431 transistor

432T-5

Abstract: polarity reversal protection 432DD DPDT relay with internal transistor driver and coil transient , silicon suppression diode and a transistor driver. This hybrid package reduces required PC board floor , ) 0.3 min. 432T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , . TRANSISTOR BASE CONNECTION FOR 432T ONLY .035 (.89) ±.010 (0.25) 432 8 +.002 (.05) .017 (.43 , , ER412D, ER412DD J412, J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420
Teledyne Relays
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J412

Abstract: TRANSISTOR j412 732TN DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL , and transistor driver. The integrated packaging of the relay with its associated semiconductor , ) (@25°C & lc = 100 A) (Vdc) 732TN Transistor Characteristics 2.0 max 60 min. 0.3 min 6.0 min 60 , : .75 (19.05) MIN. (.05) .017 (.43) +.002 (.03) DIA. ­.001 732 TRANSISTOR BASE CONNECTION , ) .300 [7.62] .100 [2.54] .200 [5.08] .393 (9.99) ER411T ER412, ER412D, ER412DD J412
Teledyne Relays
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J114 453124 TELEDYNE RELAYS 732D hybrid teledyne teledyne 732d-5

TRANSISTOR j412

Abstract: relay with internal transistor driver and coil transient suppression diode INTERNAL CONSTRUCTION , internal silicon diode and transistor driver. The integrated packaging of the relay with its associated , ) (Vdc) Collector-base breakdown Voltage (BVCBO) (@25°C & lc = 100 µA) (Vdc) 712TN Transistor , ) DIA. MAX. .035 (.89) ± .010 (0.25) TRANSISTOR BASE CONNECTION FOR 712TN ONLY WIRE LEAD , , ER412D, ER412DD J412, J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420
Teledyne Relays
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411D-5

Abstract: 411DD SPDT relay with internal transistor driver and coil transient suppression diode 411T , diode and transistor driver. This hybrid package reduces required PC board floor space by reducing the , 100 min. Base Turn Off Voltage (Vdc) 0.3 min. 411T Transistor Emitter-base breakdown Voltage , , ER412D, ER412DD J412, J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420 , ' Pad 5/ 6/ .390 [9.91] SQ ER411T, J411T, ER412, ER412D ER412DD, J412, J412D, J412DD ER412T
Teledyne Relays
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411D-5

h a 431 transistor

Abstract: transistor 431t reversal protection 431DD SPDT relay with internal transistor driver and coil transient suppression , transistor driver. This hybrid package reduces required PC board floor space by reducing the number of , Voltage (Vdc) 0.3 min. 431T Transistor Emitter-base breakdown Voltage (BVEBO) (@25°C) (Vdc) 6.0 min , , ER412D, ER412DD J412, J412D, J412DD .100 [2.54] .300 [7.62] .388 (9.86) ER420, J420 , ' Pad 5/ 6/ .390 [9.91] SQ ER411T, J411T, ER412, ER412D ER412DD, J412, J412D, J412DD ER412T
Teledyne Relays
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431T1 a/TRANSISTOR+431t

J406

Abstract: TRANSISTOR J406 URFDB Sec 03_2025B 11/3/99 10:35 AM Page 3-50 TM UPB2025B 25W, 2.0GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 2.0GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers in Class A or AB operation. · Industry standard package. · Low , Source Z Load .85 - j2.34 .82 - j2.45 .80 - j2.55 .79 - j4.06 .85 - j4.10 .91 - j4.12
UltraRF
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J406 TRANSISTOR J406 ultrarf J245

2395 transistor

Abstract: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 â'" 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved , transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline , . 2 of 17 BLF8G24LS-100(G)V NXP Semiconductors Power LDMOS transistor 5. Thermal , NXP Semiconductors Power LDMOS transistor 7.2 Impedance information Table 8. Typical impedance
NXP Semiconductors
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2395 transistor 2002/95/EC IS-95 24LS-100GV

teledyne relay 412 screening

Abstract: TRANSISTOR j412 DPDT relay with internal transistor driver and coil transient suppression diode INTERNAL , transistor driver. This hybrid package reduces required PC board floor space by reducing the number of , , 412T 100 min. Base Turn Off Voltage (Vdc) 0.3 min. 412T Transistor Emitter-base breakdown Voltage , from Terminals) .031 (.79) ± .003 (0.08) TRANSISTOR BASE CONNECTION FOR 412T ONLY 8 10 9 1 2 3 , ER412DD, J412, J412D, J412DD ER412T, J412T 712, 712D, 712TN ER431T, J431T, ER432, ER432D ER432DD, J432
Teledyne Relays
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teledyne relay 412 screening teledyne 732 412D 412DD-26 ER114D j114dd teledyne

TRANSISTOR j412

Abstract: J412 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications · Unit: mm 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) · High forward transfer admittance: |Yfs| = 7.7 S , junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution , µC Marking J412 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free
Toshiba
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2-10S1B

TRANSISTOR j412

Abstract: 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications · · · · · 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current , : Repetitive rating: pulse width limited by maximum junction temperature This transistor is an , J412 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb
Toshiba
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TRANSISTOR j412

Abstract: 2SJ412 2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications · Unit: mm 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) · High forward transfer admittance: |Yfs| = 7.7 S , junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution , dIDR/dt = 50 A/s 0.5 C Marking J412 Part No. (or abbreviation code) Lot No. A
Toshiba
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Teledyne J411-9WP

Abstract: GRF331 J412 TO-5 Relays, Non-Latching DPDT 29 J432 TO-5 Relays, Non-Latching Sensitive DPDT 29 , internal silicon diode and transistor driver. The integrated packaging of the relay with its associated , 50 mV 18 712D 220 12 880 13.0 0.68 26 TN = Internal transistor driver , and transistor driver. The integrated packaging of the relay with its associated semiconductor , /28Vdc TN = Internal transistor driver 732 6 200 4.5 1.00 Inductive: 200mA/28Vdc
Teledyne Relays
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Teledyne J411-9WP GRF331 D6-82479 MIL-STD-790 JISQ9100 S-311-P TR0114

TRANSISTOR j412

Abstract: 2SJ412 2SJ412 Silicon P Channel MOS Type (L2-MOSV) TOSHIBA Field Effect Transistor 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm · 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) · High forward transfer admittance: |Yfs| = 7.7 S , temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 , C Marking J412 Note 4: A line under a Lot No. identifies the indication of product Labels
Toshiba
Original
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