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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
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HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

TRANSISTOR bc177b

Catalog Datasheet MFG & Type PDF Document Tags

TRANSISTOR bc177b

Abstract: bc177a Philips Semiconductors Product specification PNP general purpose transistor FEATURES · Low , amplification. DESCRIPTION PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. PINNING PIN 1 , purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , . Transistor mounted on an FR4 printed-circuit board. 1997 Jun 04 234 Philips Semiconductors, Product specification PNP general purpose transistor CHARACTERISTICS Tj = 25 JC unless otherwise
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TRANSISTOR bc177b bc177a BC177 pnp transistor SOT-18 Transistor BC177 bc177 BC177 BC177A BC177B

BC177 NPN transistor

Abstract: transistor 200mhz 100w Description Package Polarity FET: Diode: 2N918AQF Quad Transistor Quad Ceramic Flat Pack NPN VDSS IC(cont) ID , Transistor Quad Ceramic Flat Pack NPN VDSS IC(cont) ID(cont) HFE(min) HFE(max) @ VCE/IC FT RDSS Voltage , downloaded as Acrobat PDF files. Bipolar Products PRODUCT BC177 BC177B BC177CSM BC177CSM-JQR-B BC177DCSM
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BC377 BC177 NPN transistor transistor 200mhz 100w 2S026 IC202 to-53 2N918A 2N918ACSM 2N918ACSM-JQR-B 2N918ADCSM 600MH 2N930C

BC177 NPN transistor

Abstract: BC177 pnp transistor BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm (inches) GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) APPLICATIONS ) 0 0 1 7 2 1 . . 0 0 ( ( 3 2 3 3 . . 5 4 1 2 .7 (0 .5 0 0 ) m in . , 260 IC = -2mA BC177B 240 500 f = 1kHz BC178A 125 260 BC178B 240 500
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Transistor BC 177 Datasheet BC177 transistor BC178-BC179 BC177 NPN transistor datasheet transistor bc178 BC179B 100MH

Transistor BC177

Abstract: SOT-18 DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor , Jun 04 Philips Semiconductors Product specification PNP general purpose transistor BC177 , switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO , 2 MHz Philips Semiconductors Product specification PNP general purpose transistor , 1. Transistor mounted on an FR4 printed-circuit board. 3 0.5 K/mW 0.2 Note 1997
Philips Semiconductors
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DATASHEET Transistor BC107 transistor BC107 specifications BC107 Transistor application notes sot18 MAM263 SCA54

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE STZTA92 MMBTA42 MMBTA92 (1) Different PIN OUT (2) Similar Package (3) Medium Power Transistor For , Driver For LED High gain transistor used to drive 100mA relay. High gain transistor used to drive 20mA LED. Due to the high gain characteristic the transistor will switch on with just IB=300µA. Due to the high gain characteristic the transistor will switch on with just IB=100µA. ST Nearest , ) Medium Power Transistor 1 6 Industry Standard 2N3904 2N3906 2N4401 2N4403 2PB709AR 2PD601
STMicroelectronics
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MMBT3094 transistor 2N3906 smd 2A SOT23 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BF722 BF723 BFN38 CZTA42 CZTA92 KSA539

EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 2N930 NPN TO-18 BC169C 2N2484 NPN TO-18 BC177 2N2604* PNP TO-18 BC177A 2IM2604* PNP TO-18 BC177B , -18 BFX29 2 N 2904A . ?NP TO-39 3-16 EgAVTHEONj Discrete Devices Beam Lead Chips Transistor Chips
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2N328A 2N1025 2N1026 2N2280 EQUIVALENT TRANSISTOR bc109c TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N327A 2N327B 2N328B 2N329A 2N329B

EQUIVALENT TRANSISTOR bc109c

Abstract: equivalent transistor 2N1711 2N930 NPN TO-18 BC169C 2N2484 NPN TO-18 BC177 2N2604* PNP TO-18 BC177A 2IM2604* PNP TO-18 BC177B , Dual-in-line Quad TO-86 Flat Pack 3-17 Discrete Devices Beam Lead Chips Transistor Chips 100% Probed
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equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola transistor bc107b equivalent 2N760 2N760A 2N929 2N929A 2N930A 2N930B

993 395 pnp npn

Abstract: bc237 smd sot23 package Low-power transistors 2 5 ­ 23 26 Transistor arrays 7 ­ 29 29 29 , ­ ­ ­ Power transistors Resistor-equipped transistors & arrays Transistors Transistor , 300 200 450 100 BC177B 222 BC108 TO-18 20 100 300 110 800 100 , 260 100 BC107A 231 BC177B TO-18 45 100 300 240 500 100 BC107B , GENERAL PURPOSE TRANSISTOR ARRAYS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot
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993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BF622 BF721 BF720 BSP15 BSP19 BSP16

TRANSISTOR BC 448 smd

Abstract: transistor MPSA77 transistors Transistor arrays Medium-power transistors Power transistors Resistor-equipped transistors & arrays Transistors Transistor arrays Switching transistors Low-power transistors Medium-power transistors , 2PA1015Y BC177 BC177A BC177B BC307 BC307B BC327 BC327A BC327-16 BC327-25 BC.327-40 BC328 BC328-16 BC328 , 2PA1015BL 2PA1015GR 2PA1015Y BC177 BC177A BC177B BC307 BC307B BC327 BC327A BC327-16 BC327-25 BC327-40 BC328 , LEADED DEVICES (continued) NPN GENERAL PURPOSE TRANSISTOR ARRAYS TYPE NUMBER BCY87 BCY88 BCY89 VCEO max
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2PC945K 2PC945Q BC337 TRANSISTOR BC 448 smd transistor MPSA77 JA101P transistor pn2222 BC853B smd transistor npn 491 2N4124 2N5088 2PC945 2PC945P

SMD Codes

Abstract: TRANSISTOR SMD T1P example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , dual gate digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small , effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
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SMD Codes TRANSISTOR SMD T1P BAW92 MMBD2104 schottky diode s6 81A smd transistor A6a BC846A FMMT3904 BZV49 BZV55 BAS32 BAS45

MMBD2103

Abstract: ZENER DIODE t2d example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum , digital transistor (see codebook introduction) enhancement (mode - FETs) field effect transistor transition frequency Gallium Arsenide field effect transistor gate ground general purpose small signal , transistor maximum available gain maximum minimum microwave minature integrated circuit modular amplifier - an mmic amplifier metal oxide insulated gate fet n-channel fet (any type) npn bipolar transistor
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MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 Transistor NEC 05F ZENER DIODE t2d 93 BAV105 LL4148 LL4448 BB241 BB249 LL914

KT 819 transistor

Abstract: 2N2222A 338 Transistor KCZ58.KC8l0;irfert je Tramsistor BC177B.KT209M; -ÜE0»2O V BC177B,KT209M; - ^ * 2 0 V KT3107B f , 130 150 150 150 330 200 KT3107B,BC177B I F , BC109C BC550B BC550B BC550B BC560B BC560B BC560B BC560B BC107B BC177B SF129D 2N2905A KFY1Ö KFY18 300 , SS108D KCZ5Ö.2 Tr« im Aluquader t i f e r t e je Transistor . BC107B,SC237Es F< 5dB SC239E ; BC109C , ,KT3107B , F< 6dB BC560B.KT3107B j F< 2dB BC179C.KT3107B ; F
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KT 819 transistor 2N2222A 338 SF137D SSY20B KT819W SF127E 400MH

MMBD2104

Abstract: Transistor NEC 05F transistor with a Vc e (max) of 20V, maximum collector current of 100mA and a maximum total power dissipation
SMD Code Book
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hp2835 diode what is the equivalent of ZTX 458 transistor T2D DIODE 3w NDS358N mmbf4932 2n2222 as equivalent for bfr96 LL4150 BB219 LL300 BA682 BA683 BA423L

BC237

Abstract: transistor BC107 specifications MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor NPN Silicon COLLECTOR 3 2 BASE 1 , TIME C < COPT C=0 Figure 3. QT Test Circuit NOTE 1 When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or "stored" in the transistor. QS may be written , . The charge required to turn a transistor "on" to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant
ON Semiconductor
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MPS3646 BC237 mps4123 opposite transistor equivalent 2n5551 transistor equivalent book 2N5401 2n3819 equivalent transistor 226AA MM3001 MM3725 MM4001 MMAD1106

Transistor 2N2905A

Abstract: BC237 Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , CHARACTERISTICS - MUN5311DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = , CHARACTERISTICS - MUN5311DW1T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC , TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE
ON Semiconductor
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Transistor 2N2905A applications of Transistor BC108 transistor c-1000 MMBF4856LT1 MMBF4860LT1 MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1

bc547 spice model

Abstract: SPICE model BC237 . It allows the external transistor to have its emitter/source directly grounded and still operate with , , and RF transistor current in "STANDBY." This device is intended to replace a circuit of three to six , VENBL = VCC TA = 25°C 50 100 150 200 250 EXTERNAL TRANSISTOR DC BETA @ IC3 300 IC3 = 15 mA IC3 = 10 mA , °C Figure 8. DVref versus External Transistor DC Beta @ IC3 5.0 D I C 3 (%) 0 ­5.0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA 0 50 250 100 150 200 HFE, EXTERNAL TRANSISTOR DC BETA 300 ­10 ­15
ON Semiconductor
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bc547 spice model SPICE model BC237 BC238 spice model BF256B spice model bc237 SPICE bc237 SPICE model MDC5001T1 MMPQ3799 MMSV3401T1 MPF970 MPF971 MPF3821

transistor 2N5458

Abstract: BC237 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN2211T1 SERIES Motorola Preferred Devices NPN SILICON BIAS RESISTOR TRANSISTOR 3 2 1 CASE
ON Semiconductor
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transistor 2N5458 2N930 NPN transistor FREE BC848 MPF3822 MPF4856 MPF4857 MPF4858 MPF4859 MPF4860

transistor marking wt

Abstract: BC237 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10­23 j/°K) T , transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall , Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input , µs 1.0 s The safe operating area curves indicate IC­VCE limits of the transistor that must be
ON Semiconductor
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transistor marking wt motorola application note AN-569 modes of operation of transistor BC177 MOTOROLA TRANSISTOR 2N3819 2N2222 MPS2222 npn transistor hie for bc547b MPS6521 MPS6523 MPS6520/D MPF4861 MPQ6501 MPS3638

BC237

Abstract: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base , ) MUN5111T1 SERIES Motorola Preferred Devices PNP SILICON BIAS RESISTOR TRANSISTOR 3 1 2 CASE
ON Semiconductor
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70/SOT MPS3866 MPS4123 MPS4125 MPS4258 MPS5771

BC237

Abstract: 2N2904 PNP Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon COLLECTOR 3 2 , ) 4KTRS ) In 2RS2 12 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 , µs 1.0 s The safe operating area curves indicate IC­VCE limits of the transistor that must be , TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style M fan fold box is equivalent to styles E and F of reel pack
ON Semiconductor
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2N2904 PNP Transistor MPS3906 MPS6520 2N5551 MPS2222A 2N5401 BAS16LT1
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