NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Transistor (PT) Tc « 100°C . Power of Transistor (Pj> tc â- 25°c 20. so WATTS WATTS TA - 25°C ... | OCR Scan |
1 pages, |
SS 5 transistor SS TRANSISTOR datasheet abstract |
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| Abstract: Volts • Thermal resistance each D7ST transistor Double sided cooling, Junction to Case Case to Sink Lubricated Rwc Raes .05 .02 °C/W . â- °c/w- Power Dissipation Tc =25°C each D7ST transistor Pj 30Q0 , Transistors D7ST NPN Power Switching Darlington Transistors NPN Power Switching Darlington Transistor Sets , : A DA11403508 DA11403508 Darlington Transistor Set consists of two discrete transistors, a D62T and a D7ST with , Darlington Transistor Sets 300-350-800 Amperes/400-500 Amperes/400-500 Volts Maximum Ratings Characteristics Symbol DA11 ... | OCR Scan |
8 pages, |
SWITCHING TRANSISTOR 144 D62T DA11403508 DA11503008 DB12408005 DB12508004 amerex npn darlington transistor 150 watts npn darlington transistor 200 watts NPN power transistor 15A amperes 0D057DS DA11/DB12 0D057DS abstract |
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| Abstract: .ICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC O VHF Band Power Amplifier Applications Po = 24W (Min-X f = 175MHz, VCC = 12.5X Pj = XW) • Recommended for Large Signal Class C.Power Amplifier •^liSr s » îooiïïife Ltv>i -J-0 SWR 50 : 1 PJ =4W, Vcc=14.5V, f=175MHz • 100* Tested Load Mismatch at All Phase Angles with 50: 1 VSWR, @Pj=4W, VCC = 14.5V, f = 175 MHz • gflilltt-tJ^^-f ^»ISiftilt^tto *5gtS MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT VcBO 40 V /^ii» • ^ ÃŽ -j » Rfl«Å' VcEO 1 8 ... | OCR Scan |
3 pages, |
transistor power rating 5w RFC-M datasheet abstract |
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| Abstract: 01945 0 71 31-// SEMICONDUCTOR TECHNICAL DATA TOSHIBA TRANSISTOR 2 S C 2 1 0 3 A SILICON NPN , High Collector Efficiency 1C = 1 0% (TYP. ) P0=2 7W (min) (f = 175MHz, Vcc=l 2.5 V , Pj = 4.2W) VSWR 50:i Pj = 4W, Vcc=14.5V, f = 1 7 5 MHz • 100 , l) Po Vcc=125V, f=1 75MHz pj-4.2w, % s 60 i 27 - - W ¡t^lJ^rÄ -f ^ K' - > J* Zin f=175MHz, Vcc-12SV , / Pj = 2W^- > y > A- S5ÎÈ;£ 1 . 10 11 12 13 14 15 16 «âg«Å' Vcc(V ... | OCR Scan |
3 pages, |
2SC2103A pj42 datasheet abstract |
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| Abstract: Pulsed Power Transistor, 40W v2.00 RF Test Fixture "cc 0 00 II p-j;I / x/4 r- , an AMP comDanv Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty PH1214-55EL PH1214-55EL 1.2 - 1.4 GHz v2.00 Features l l l l l l l l 903 (22 85) J NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic ... | Original |
2 pages, |
PH1214-55EL PH1214-40M ph1214-40 t 30 55el PH1214-55EL abstract |
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| Abstract: s-S> • S/ Compound Transistor BN1F4N ft it (Ri = 22 kfì, R2 = 47 kfì) mm ($ii:mm)* o , 25 Jlffli 50 Ta re: 75 100 3 - r-cu - r^ h- co to nexo i i i co pj «i - o N „COO) io r- h-o o o cvi-wcoco-woin-o-o-M¡io)on-o - pj - in , i ! i i i i i i ! r i i - ... | OCR Scan |
4 pages, |
datasheet abstract |
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| Abstract: HA16103 HA16103 PJ/FPJ Watchdog Timer Description The HA16103PJ/FPJ HA16103PJ/FPJ monolithic voltage control is , method 417 HA16103 HA16103 PJ/FPJ Pin Arrangement HA16103FPJ HA16103FPJ HA16103PJ HA16103PJ P-RUN 1 18 STBY , NC 10 11 NC VOUT NC 8 9 11 10 (Top View) 418 (Top View) HA16103 HA16103 PJ , ( ) shows pin No. of SOP 419 HA16103 HA16103 PJ/FPJ Pin Functions No. Pin Name Description (1 , transistor. The pin supplies 5-V regulated voltage for internal circuit 9,(10) NC NC pin 10,(11 ... | Original |
18 pages, |
HA16103PJ HA16103FPJ HA16103 h a 431 transistor 2SB857D H8/532 TRANSISTOR PJ PJ 431 Transistor PJ 431 HA16103PJ/FPJ HA16103 abstract |
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| Abstract: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS Power Output Circuit Output , PLASTIC FAMILY [n-p-n] (silicon) [cont'd] fj = 0.8 MHz min; Pj = 50 W max 2N TYPES DESCRIPTION VnrnlsUil , 4 0.5 3.5 70 1 3.5 0.35 1.7 3.5 2N TYPES fj = 0.4 MHz min; Pj = 300 W max CEX (sus) 'CEV 2N TYPES 2N5671 2N5671 2N5672 2N5672 2N5671 2N5671 FAMILY [n-p-n] (silicon) fT = 50 MHz min; Pj = 140 W max High-Current , ] (silicon) fT = 8 MHz min; Pj = 10 W max PNP Complement of 2N5786 2N5786 PNP Complement of 2N5785 2N5785 PNP Complement ... | OCR Scan |
2 pages, |
2N6269 2N6111 2N6103 2N5495 2N5492 2N4036 2n3055 audio output circuit 2N2102 2N6320 2N6386 300W TRANSISTOR AUDIO AMPLIFIER 40360 transistor 40632 40872 2N6292 2N6111 2N6292 abstract |
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| Abstract: SEMICONDUCTOR TECHNICAL DATA ssîfjyi'ii toshiba transistor 2 s 0 5 4 7 silicon h pn epitaxial plan ab o vhf nummm o mum t ^SB O VHP Power Amplifiers, Frequency Multiplier and F. F High Power Drivers Applications 1 1 5MHi t PD = 2-5W (Mln. ) ( Pj = 0.2 5W, Vco = 2 8 V) |. ? y i> y a ; fj= 5 0 0MHz ( Typ.) it ^ maximum ratings (Ta = 2 5'C) charaoteristic symbol ratino unit = -j - fül b ee , cot VCB = 30V IE = 0 t - 1MHz - - 10 PF asms p0 VCC = 28V f = 175MHz Pj = 0.25W V > 50« Fig. 1 2.5 - ... | OCR Scan |
4 pages, |
9At TRANSISTOR 2SC547 datasheet abstract |
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| Abstract: central Semiconductor Corp. central ™ semiconductor corp. 145 Adams Avenue Hauppauge, New York 11 788 ♦ I 2N404A 2N404A GERMANIUM TRANSISTOR JEDEC TO - 5 CASE ( all leads insulated from case ) DESCRIPTION The CENTRAL SEMICONDUCTOR 2N404A 2N404A is a Germanium PNP Transistor designed for low frequency medium power amplifier and swithcing applications. V CBO MAXIMUM RATINGS ( TA = 25° C ) Collector-Base , Emitter Current lE Power Dissipation P-j- Operating Junction Temperature T, Storage Temperature ;J ... | OCR Scan |
1 pages, |
GERMANIUM TRANSISTOR 2N404A 2N404A abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| MOS Scaling: Transistor Challenges for the 21st Century MOS Scaling: Transistor Challenges for the 21st Century (continued) Page 9 of 10 Acknowledgments/References Acknowledgments The authors would like to acknowledge the collaborative efforts of our colleagues in the Portland Technology Development and Technology Computer Aided ] H.-H. Tseng, P.G.Y. Tsui, P.J. Tobin, J. Mogab, M. Khare, X.W. Wang, T.P. Ma, R. Hegde, C www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3i-v1.htm |
Intel | 02/02/1999 | 9.01 Kb | HTM | art_3i-v1.htm |
| MOS Scaling: Transistor Challenges for the 21st Century MOS Scaling: Transistor Challenges for the 21st Century (continued) Page 9 of 10 Acknowledgments/References Acknowledgments The authors would like to acknowledge the collaborative efforts of our colleagues in the Portland Technology Development and Technology Computer Aided ] H.-H. Tseng, P.G.Y. Tsui, P.J. Tobin, J. Mogab, M. Khare, X.W. Wang, T.P. Ma, R. Hegde, C www.datasheetarchive.com/files/intel/techno~1/itj/q31998/articles/art_3i.htm |
Intel | 31/10/1998 | 9.01 Kb | HTM | art_3i.htm |
| MOS Scaling: Transistor Challenges for the 21st Century MOS Scaling: Transistor Challenges for the 21st Century (continued) Page 9 of 10 Acknowledgments/References Acknowledgments The authors would like to acknowledge the collaborative efforts of our colleagues in the Portland Technology Development and Technology Computer Aided Design groups: T. Ghani, R. Rios, M .-H. Tseng, P.G.Y. Tsui, P.J. Tobin, J. Mogab, M. Khare, X.W. Wang, T.P. Ma, R. Hegde, C.Hobbs, J www.datasheetarchive.com/files/intel/technologies/itj/q31998/articles/art_3i-v1.htm |
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| Transistor, N-Chan, 2N7002 2N7002 2N7002 2N7002, SOT-23 Fairchild, Semi., 2N7002 2N7002 2N7002 2N7002 1.0 T1 Trans, L10-1019 L10-1019 L10-1019 L10-1019 BH Electronics, L10 CONN.,DC POWER JACK, T/H, PJ-102AH CUI INC., CUI-PJ-102AH (PBF) 1.0 J2 Right-Angle Header, Keyless Transistor, P-Chan, BSS84 BSS84 BSS84 BSS84, SOT-23 Diodes Inc., BSS84-7-F BSS84-7-F BSS84-7-F BSS84-7-F 0.0 T2 Trans, VP5-0155-R VP5-0155-R VP5-0155-R VP5-0155-R Cooper Bussmann, VP5 www.datasheetarchive.com/download/59883040-364657ZC/1259a.zip (DC1259Acf.xls) |
Linear | 22/09/2009 | 1702.01 Kb | ZIP | 1259a.zip |
| Type B FCI 609-1039-ND 609-1039-ND 609-1039-ND 609-1039-ND USB_HOST 73725-0110BLF 73725-0110BLF 73725-0110BLF 73725-0110BLF USB Type A FCI 609-1041-ND 609-1041-ND 609-1041-ND 609-1041-ND 5V_PWR PJ-102A Modular Jack Digi-Key P/N IC2 TJA1040D TJA1040D TJA1040D TJA1040D CAN transceiver NXP Q1 PMBTA92 PMBTA92 PMBTA92 PMBTA92 transistor-pnp NXP Q2 PMP5201Y PMP5201Y PMP5201Y PMP5201Y PNP transistors NXP Q3 PMP4201Y PMP4201Y PMP4201Y PMP4201Y NPN transistors NXP Q4 PDTC124TT PDTC124TT PDTC124TT PDTC124TT transistor-npn NXP Q5 PDTC114TT PDTC114TT PDTC114TT PDTC114TT transistor-npn NXP Q6 PMGD280UN PMGD280UN PMGD280UN PMGD280UN N-channel MOSFET NXP Q7 MMBT3904 MMBT3904 MMBT3904 MMBT3904 transistor-npn NXP Q8 MMBT3904 MMBT3904 MMBT3904 MMBT3904 transistor-npn NXP RESET PTS www.datasheetarchive.com/download/36331940-595893ZC/ird.cd.contents.zip (IRD Platform 1v3 BOMrel1.pdf) |
NXP | 23/10/2012 | 35869.34 Kb | ZIP | ird.cd.contents.zip |
| Type B FCI 609-1039-ND 609-1039-ND 609-1039-ND 609-1039-ND USB_HOST 73725-0110BLF 73725-0110BLF 73725-0110BLF 73725-0110BLF USB Type A FCI 609-1041-ND 609-1041-ND 609-1041-ND 609-1041-ND 5V_PWR PJ-102A Modular Jack Digi-Key P/N IC2 TJA1040D TJA1040D TJA1040D TJA1040D CAN transceiver NXP Q1 PMBTA92 PMBTA92 PMBTA92 PMBTA92 transistor-pnp NXP Q2 PMP5201Y PMP5201Y PMP5201Y PMP5201Y PNP transistors NXP Q3 PMP4201Y PMP4201Y PMP4201Y PMP4201Y NPN transistors NXP Q4 PDTC124TT PDTC124TT PDTC124TT PDTC124TT transistor-npn NXP Q5 PDTC114TT PDTC114TT PDTC114TT PDTC114TT transistor-npn NXP Q6 PMGD280UN PMGD280UN PMGD280UN PMGD280UN N-channel MOSFET NXP Q7 MMBT3904 MMBT3904 MMBT3904 MMBT3904 transistor-npn NXP Q8 MMBT3904 MMBT3904 MMBT3904 MMBT3904 transistor-npn NXP RESET PTS www.datasheetarchive.com/download/36331940-595893ZC/ird.cd.contents.zip (IRD 1v3 BOMrel1.pdf) |
NXP | 23/10/2012 | 35869.34 Kb | ZIP | ird.cd.contents.zip |
| -T1-E3 1.0 Q7 TRANSISTOR, MMBT3906WT1 MMBT3906WT1 MMBT3906WT1 MMBT3906WT1 SOT-323 On Semi., MMBT3906WT1G MMBT3906WT1G MMBT3906WT1G MMBT3906WT1G 1.0 Q10 Optional Circuit installed DUAL TRANSISTOR, EMX1 ROHM, EMX1 1.0 Q14 Optional Circuit installed NPN TRANSISTOR, 2SC2412K 2SC2412K 2SC2412K 2SC2412K ROHM HEADER SAMTEC, TMM103-02-L-D TMM103-02-L-D TMM103-02-L-D TMM103-02-L-D 1.0 J1 Connector Cui-Stack, CUI-PJ002A (PBF) 1.0 J2 Connector AMP Inc www.datasheetarchive.com/download/39402682-364655ZC/1256a.zip (1256ACF.xls) |
Linear | 07/10/2009 | 1506.24 Kb | ZIP | 1256a.zip |
| 23","-","Y","Philips","Low Power NPN transistor SMD" "BC847B BC847B BC847B BC847B","T2","SOT23","-","Y","Philips","Low Power NPN transistor SMD" " turn horizontal -19-006-10-809" "HEADER BOX 14P","J7","HEADER BOX 14","","N","Harting","Regular Boxed Header Gold Plated Contacts 09185146324" "HEADER DUAL 4P","J3","HEADER DUAL 4","","N","PreciDip","PCB Dual Row Header Gold Plated 892-19-004-10-809" "HEADER DUAL 4P","J11","HEADER DUAL 4","","N","PreciDip","PCB Dual Row Header Gold Plated 892 www.datasheetarchive.com/download/52872592-996090ZC/ug019.zip (XlvdsBoardRev02Parts.csv) |
Xilinx | 08/10/2003 | 3632 Kb | ZIP | ug019.zip |
| power for a speed power product of only 9pJ. For higher density devices internal gates run at 100ps with 5mW of power for a speed power product of only 0.5pJ. Internal Differential Interconnect The BaseÃ'toÃ'emitter voltage drop of a transistor at specified collector and base currents. VCB CollectorÃ'toÃ'base voltage drop of a transistor at specified collector and base currents. VCC The most www.datasheetarchive.com/files/motorola/design-n/logic/dl140_ov.htm |
Motorola | 25/11/1996 | 19.64 Kb | HTM | dl140_ov.htm |
| -2-00-80-00-00-07-0 2.0 1.0 J1 Connector Cui-Stack, CUI-PJ002A(PBF) 3.0 1.0 J2 Connector AMP Inc. 787441-1 (PBF) 4.0 5 6,Q5,Q13 P-Chan., TP0610T TP0610T TP0610T TP0610T SOT-23 VISHAY, TP0610T-E3 TP0610T-E3 TP0610T-E3 TP0610T-E3 8.0 1.0 Q7 TRANSISTOR, MMBT3906WT1 MMBT3906WT1 MMBT3906WT1 MMBT3906WT1 SOT-323 On www.datasheetarchive.com/download/16772563-364559ZC/1104a.zip (1104ACF .xls) |
Linear | 22/09/2009 | 1014.36 Kb | ZIP | 1104a.zip |