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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

TRANSISTOR 612

Catalog Datasheet MFG & Type PDF Document Tags

transistor BU 104

Abstract: TRANSISTOR 612 NPN SILICON TRANSISTOR, DIFFUSED MESA TRANSISTOR NPN SILICIUM, MESA DIFFUSE BU 104 The BU 104 is a fast switching high voltage transistor. It is primarly intended for use in horizontal deflexion output stage of black and white TV receivers fitted with 110° picture tube. Le BU 104 est un transistor , 612 BU 104 SWITCHING TIMES TEST CIRCUIT SCHEMA DE MESURE DES TEMPS DE COMMUTATION 130'juH Leakage , est, ajouter une seif extérieure pour avoir 0,8 fiHI 3/7 612 BU 104 SAFE OPERATING AREA" Aire de
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mil 43

Abstract: process 65 Section 6 Bipolar Transistor Dice Process 03 , . 6-12 Process 75 . 6-12 Process 76 . 6-12 Process 77 . 6-12 Process 78
Fairchild Semiconductor
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str 5707

Abstract: 2SC 8050 TO-220/TO-3P fast-recovery rectifier SFPB SMD Schottky diode FN NPN transistor SFPL SMD ultra-fast recovery rectifier FP PNP transistor SFPM SMD rectifier HVR , ­ Sanken switching power supply SSB Sanken Schottky barrier diode STA Sanken transistor array STR Sanken transistor regulator SUM Sanken switching power supply TF Thyristor, reverse , rectifier 2SA EIAJ-registered PNP transistor 2SB EIAJ-registered PNP Darlington transistor
Allegro MicroSystems
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transistor

Abstract: TRANSISTOR 612 (Transistor Output) MOC211 Series. 6-6 (Transistor Output) MOC215 S eries. 6-9 (Transistor Output) MOC223 . 6-12 (Darlington Output) MOC256 . , (Transistor Output) MOCD208 Series .6-21 (Transistor Output) MOCD211 .6-24 (Transistor Output) MOCD213
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MOC205 MOC263 transistor TRANSISTOR 612 TRANSISTOR 618 transistor 624 MOCD207 MOCD217 MOCD223
Abstract: 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and , 460 RF transistor. BFP460 board This board shows BFR 360L3 in different ISM-band applications , TSFP package. Please specify the applications and the transistor in your order. BFR360L3 board BFR380F board BFR360F board BFR340F board RF transistor BFR 460L3 BFR 460L3 Evalboard RF transistor BFP 460 BFP 460 Evalboard RF transistor BFR 300 Family BFR 360L3 Evalboard RF Infineon Technologies
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BFR460L3 434MH 340L3 380L3 340F/BFR 360F/BFR

Transistor B C 458

Abstract: c 458 c transistor NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR *BF 457 *BF 458 *BF 459 BF 457, BF 458 and BF 459 are plastic encapsulated transistor designed for video output stages in black and , knee voltage of a transistor is that value of the collector emitter voltage at which the small signal , V. 3/5 BF 457, BF 458, BF 459 4/5 612 BF 457, BF 458, BF 459 DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES D YNAMIQUES (pour petits signaux) 4/6 612
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BF459 Transistor B C 458 c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 CB-16

BSH204

Abstract: Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor , mode MOS transistor in a SOT23 SMD package. CAUTION The device is supplied in an antistatic package , Semiconductors Objective specification P-channel enhancement mode MOS transistor , enhancement mode . .~ o + - * MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. . , = -0.4 A; Rgen = 6 £i V GS = 0 to -6 V; V DD = -6 V; Id = - 0.4 A; Rgen = 612 V GS = 0 to -6 V; V
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BSH204

iec 61287

Abstract: CM1200HG-66H HVIGBT CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor , . 7.7 61.2 ±0.5 12 ±0.3 +1.0 0 61.2 ±0.5 59.2 ±0.5 5 ±0.15 14 ±0.3 8-7 MOUNTING , Insulated Gate Bipolar Transistor) VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc , 5 2 HVIGBT CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor , CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor
Mitsubishi
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iec 61287 HVIGBT

CM900HG-90H

Abstract: HVIGBT HVIGBT CM900HG-90H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor , min. 16.5 18 ±0.3 41 ±0.5 22 ±0.3 +1.0 38 0 LABEL 40.4 ±0.3 61.2 ±0.5 12 ±0.3 +1.0 0 61.2 ±0.5 screwing depth min. 7.7 59.2 ±0.5 5 ±0.15 14 ±0.3 8-7 MOUNTING HOLES , Insulated Gate Bipolar Transistor) VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc , HVIGBT CM900HG-90H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor
Mitsubishi
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transistor 103 cm900hg CM900HG-90 ic 5m8

TORX1950

Abstract: TOTX1952 130 630 644 Transparent 50 4760 15000 605 612 Transparent 50 4760 10000 605 612 Transparent 50 2720 7500 605 612 Transparent 50 1530 5000 605 612 Transparent 50 1530 4500 605 612 Transparent 50 1530 3500 605 612 Orange transparent 50 850 2300 605 612 Transparent 50 850 2100 605 612 Orange transparent 50 850 2000 605 612 Transparent 50 476
Toshiba
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TORX1950 TOTX1952 todx2950 TOTX1950 TORX195 tcm9200md 2010/9SCE0004K TLRMHGH48T TLRMHGH48M TLRME20CP TLSH20TP TLRMH20TP

TRANSISTOR 612

Abstract: 2N7372 datasheet TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/612 DEVICES LEVELS 2N7372 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM , ) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/612 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters
Microsemi
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2N7372 datasheet MIL-PRF-19500/612 T4-LDS-0045

CM900HG-90H

Abstract: cm900hg Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM900HG-90H IC , ±0.5 22 ±0.3 LABEL 40.4 ±0.3 61.2 ±0.5 12 ±0.3 +1.0 38 0 61.2 ±0.5 screwing depth , Bipolar Transistor) Modules May 2009 1 MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules , Voltage Insulated Gate Bipolar Transistor) Modules May 2009 2 MITSUBISHI HVIGBT MODULES CM900HG
Mitsubishi
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hvigbt diode HVIGBT from Mitsubishi electric
Abstract: Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HG-66H G IC , 0 5 ±0.15 18 ±0.3 40.4 ±0.3 61.2 ±0.5 12 ±0.3 38 61.2 ±0.5 screwing depth , (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 1 MITSUBISHI HVIGBT MODULES , Bipolar Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj , nF nF µC V µs µs HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May -
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Abstract: Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM900HG-90H G IC , ±0.15 18 ±0.3 41 ±0.5 22 ±0.3 LABEL 40.4 ±0.3 61.2 ±0.5 12 ±0.3 +1.0 38 0 61.2  , Insulated Gate Bipolar Transistor) Modules May 2009 1 MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH , Transistor) Modules MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg , nF nF µC V µs µs HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May -
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BIPOLAR TRANSISTOR

Abstract: CM1200HG-66H Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HG-66H IC , 18 ±0.3 40.4 ±0.3 61.2 ±0.5 12 ±0.3 38 61.2 ±0.5 screwing depth min. 7.7 59.2 ±0.5 , Bipolar Transistor) Modules May 2009 1 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules , HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 2 MITSUBISHI HVIGBT
Mitsubishi
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BIPOLAR TRANSISTOR

lm 9805

Abstract: smd transistor marking DK transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BST120 QUICK REFERENCE DATA DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended , Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BST120 , From junction to ambient (note 1) Note 1. Transistor mounted on ceramic substrate: area = 2,5 cm2 and
Philips Semiconductors
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lm 9805 smd transistor marking DK smd transistor marking B3 diode SOT89 smd marking B mumbai transistor smd marking dk MAM354 SCA54

transistor on 4409

Abstract: transistor 3504 nec DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD , Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity. Document No. P12104EJ2V0DS00 (2nd edition , 0.602 0.575 ­21.2 ­26.2 ­32.8 ­39.3 ­44.5 ­49.2 ­54.7 ­58.2 ­61.2 VCE = 1 V, IC = 3 mA , 0.071 0.090 0.109 0.125 0.143 0.150 0.157 0.167 54.8 56.3 56.8 61.7 61.4 61.2 62.1 60.3
NEC
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transistor on 4409 transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA

AN 6752

Abstract: msc925 epilayer substrate MSC319 base emitter base collector Existing advanced bipolar transistor , process makes use of an advanced, self-aligned transistor technology that is vastly superior to existing , emitter on transition frequency. · Higher power gain The self-aligned transistor structure significantly , collector MSC317 n+ p Self-aligned double-polysilicon buried npn transistor Fig.1 In the advanced , frequency and low feedback capacitance increase the transistor's input impedance, simplifying matching to
Philips Semiconductors
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AN 6752 msc925 AN 6752 japan NIJ004 SCS60

2SC5180

Abstract: 2SC5180-T1 DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE , ± 0.1 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including , 0.199 43.7 0.647 -54.7 88.1 0.196 39.5 0.602 -58.2 81.8 0.201 35.8 0.575 -61.2 S12 S22 ANG MAG ANG , 1600.00 0.081 -141.9 3.839 71.9 0.143 61.2 0.377 -42.8 1800.00 0.072 -162.7 3.504 68.8 0.150 62.1 0.351
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2SC5180-T1 2SC5180-T2 transistor y 5910 TC-2477

NEC IC D 553 C

Abstract: transistor on 4409 DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD , T, T sig 1. 2. 3 4. Collector Emitter Base Emitter Caution; This transistor uses figh-frequency technology. Be careful not to allow excessive current to tow through the transistor, including , ANG -21.2 -26.2 -32.8 -39.3 -44.5 -49.2 - 54.7 -58.2 -61.2 Ic = 3 mA, Z o = 50 Cl S11 MAG , 0.143 0.150 0.157 0.167 S12 ANG 54.8 56.3 56.8 61.7 61.4 61.2 62.1 60.3 57.2 MAG 0.603 0.516 0.449 0.431
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NEC IC D 553 C NEC JAPAN 3504 ic 723 cn 2SC5180-- P12104EJ2VODSOO
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