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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

TRANSISTOR 6019

Catalog Datasheet MFG & Type PDF Document Tags

TTL 7400 national semiconductor

Abstract: TRANSISTOR 6019 N-channel type CMOS the Ideal Logic Family CMOS the Ideal Logic Family TL F 6019 ­ 1 FIGURE 2-1 , transistor has virtually no voltage drop across it if there is no current flowing through it and since the , C1995 National Semiconductor Corporation TL F 6019 RRD-B30M105 Printed in U S A If we try to , or N-channel transistor is conducting Now if we increase VCC and therefore VGS the inverter must , an MOS transistor is essentially capacitive looking like a 1012X resistor shunted by a 5 pF
National Semiconductor
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AN-77 TTL 7400 national semiconductor TRANSISTOR 6019 CV2f power transistor transistors equivalents CD4000A

FR110

Abstract: 3059 npn transistor PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES · · · · H IG H fT : NE698M01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 TOP VIEW 2.1 ± 0.1 H «- 1.25 ± 0 .1 - H 17 GHz TYP H IG H G A IN : IS21 e|2 = 15.5 dB TYP at f = 2 , frequency silicon epitaxial transistor encapsulated in an ultra small 6 pin SOT-363 pack age. Its four , 6.225 6.019 5.728 5.541 5.326 5.112 4.951 4.761 4.602 169.5 160.4 151.7 143.2 135.6 127.9 121.5 115.1
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FR110 3059 npn transistor SOT-363 RF 2.0GHZ transistor 554-1 3268

uA 741 IC

Abstract: TRANSISTOR 6019 PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE698M01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 HIGH fT: 17 GHz TYP · HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz, VCE = 2 V, IC = 1 mA · NF = 1.1 dB at f = 2 GHz , silicon epitaxial transistor encapsulated in an ultra small 6 pin SOT-363 package. Its four emitter pins , 6.225 6.019 5.728 5.541 5.326 5.112 4.951 4.761 4.602 EXCLUSIVE NORTH AMERICAN AGENT FOR
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uA 741 IC IC ua 741 SOT-363 662 ic ca 741 S21E NE698M01-T1

2SC5408

Abstract: 2SC5408-T1 PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) · High fT 17 GHz TYP. 2.1±0.1 · High gain C E E E B PACKING STYLE 0.15 +0.1 ­0 8-mm wide emboss taping, 6-pin (collector) feed hole direction 0 to 0.1 3 kpcs/reel 0.7 2SC5408-T1 QUANTITY , 8.988 8.510 8.017 7.572 7.203 6.876 6.569 6.225 6.019 5.728 5.541 5.326 5.112 4.951 4.761
NEC
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p1209 P12095EJ1V0DS00

2SC5408

Abstract: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE · High fr PACKAGE DIMENSIONS (in mm) 17 GHzTYP. · High gain 2.1 ±0.1 |Szie|2 = 15.5 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 7 mA · , 1.25+0.1 , NF = 1.1 dB, @ f = 2 GHz Vce = 2 V, Ic = 1 mA 6-pin Small Mini Mold Package 1F · jl m f CD ! , 8.017 7.572 7.203 6.876 6.569 6.225 6.019 5.728 5.541 5.326 5.112 4.951 4.761 4.602 S 21 ANG 169.5
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ic 4518 applications

Abstract: 55GN01M 5Ordering number : ENN7541 55GN01M NPN Epitaxial Planar Silicon Transistor 55GN01M UHF Wide-band Low-noise Amplifier Applications Features · · Package Dimensions High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). unit : mm 2059B 0.3 0.2 0.425 [55GN01M] 0.15 3 0.425 2.1 1.250 0 to 0.1 1 2 0.65 0.65 2.0 0.3 0.6 0.9 1 , 3.379 66.41 0.134 67.71 0.252 -51.39 1200 0.401 172.13 2.862 60.19
SANYO Electric
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ic 4518 applications IC 5276 8723 transistor transistor mcp 6723 Sanyo 6324 ta 8227 CIRCUIT

2N8491

Abstract: 2N648B . is 5 5 5 A 'TRANSISTOR DISSIPATION: Pr At case temperatures up to 25°C 57 75 75 W At , , ANO iBj Igr AM) Iqj ARE: MEASIKEO WITH TEKTRONIX CURRENT PROBE P-6019 ANO TYPE >34 AUPLIFIER.OR
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2N6486 2N6489 TA8325 TA8328 TA8327 TA8326 2N8491 2N648B 2N6491 equivalent equivalent 2n6488 tektronix 454 00174S0 2N6487 2N6488

IC 7485

Abstract: IC 4511 55GN01S Ordering number : ENN7687 NPN Epitaxial Planar Silicon Transistor 55GN01S UHF Wide-band Low-noise Amplifier Applications Features · · · High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions , 53.63 0.312 -60.19 800 0.522 -165.18 4.152 79.02 0.099 57.04 0.294
SANYO Electric
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IC 7485 IC 4511 transistor 7929 IC 8898 of IC 4511
Abstract: Ordering number : ENA1114A 55GN01MA RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP Features · · http://onsemi.com High cut-off frequency : fT=5.5GHz typ High gain : S21e2=10dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage , 60.19 54.45 48.82 43.51 38.32 33.45 29.00 24.92 21.39 18.07 S12 0.026 0.037 0.060 0.084 0.109 0.134 ON Semiconductor
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SC-70 55GN01MA-TL-E TKIM/O2908AB TC-00001677 A1114-1/8 A1114-8/8

TA8724

Abstract: transistor 2n6246 N T . IB ` TRANSISTOR DISSIPATION: A t case temperatures , MEASURED FOR X g , AND I g g I g | ANO I e 2 ARE MEASURED WITH TEKTRONIX CURRENT PROBE P-6019 AND TYPE 134
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2N6248 2N6469 TA8724 transistor 2n6246 2N6246 2N6247 TA7281 TA7280

ic 4518 applications

Abstract: transistor 7089 5Ordering number : ENN7541 55GN01M NPN Epitaxial Planar Silicon Transistor 55GN01M UHF Wide-band Low-noise Amplifier Applications Features · · Package Dimensions High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). unit : mm 2059B 0.3 0.2 0.425 [55GN01M] 0.15 3 0.425 2.1 1.250 0 to 0.1 1 2 0.650.65 2.0 0.3 0.6 0.9 1 , 67.71 0.252 -51.39 1200 0.401 172.13 2.862 60.19 0.159 66.77 0.255
SANYO Electric
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transistor 7089 ic 8705 am

ic 7485

Abstract: TRANSISTOR 6019 55GN01S Ordering number : ENN7687 NPN Epitaxial Planar Silicon Transistor 55GN01S UHF Wide-band Low-noise Amplifier Applications Features · · · High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit , 53.63 0.312 -60.19 800 0.522 -165.18 4.152 79.02 0.099 57.04 0.294
SANYO Electric
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4868

nec 473

Abstract: p1209 PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE · High fT 17 GHz TYP. · High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA · NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA · 6-pin Small Mini Mold Package PACKAGE DIMENSIONS (in mm) 2.1±0.1 1.25±0.1 0.2 +0.1 ­0 0.15 +0.1 ­0 1.3 0.65 0.65 , 8.017 7.572 7.203 6.876 6.569 6.225 6.019 5.728 5.541 5.326 5.112 4.951 4.761 4.602 S 21 ANG 169.5 160.4
NEC
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nec 473 NEC 596 nec 646 nec 1299 662 nec 731 PU10041EJ01V0DS

IR2132 APPLICATION NOTE

Abstract: IR2130 Data Sheet No. PD-6.019-G IR2130/IR2132 3-PHASE BRIDGE DRIVER Features · · · · · · · · Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage , Transistor Count Die Size Die Outline Thickness of Gate Oxide Connections First Layer Second , 10 Data Sheet No. PD-6.019-G IR2130/IR2132 IR2130/IR2132 3-PHASE BRIDGE DRIVER Graphs
International Rectifier
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IR2130 IR2132 APPLICATION NOTE IR2130 APPLICATION NOTE power supply IRF830 APPLICATION Mosfet driver IR2130 igbt driver ir2130 circuit 019-G IR2132 IRF820 IRF830 IRF450

55GN01MA

Abstract: ic 4518 applications 55GN01MA Ordering number : ENA1114 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =10dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage , 0.134 67.71 0.252 -51.39 1200 0.401 172.13 2.862 60.19 0.159 66.77
SANYO Electric
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491 marking transistor SANYO DC 303 temperature control IM 314 IM 304 zo 103 ma A1114 A1114-6/6

5271 sanyo

Abstract: Ic 9148 Ordering number : ENN7326 2SC5647 NPN Epitaxial Planar Silicon Transistor 2SC5647 UHF to S Band Low-Noise Amplifier and OSC Applications · · · Package Dimensions Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2106A : fT=11.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). [2SC5647] 0.75 0.6 0.3 3 , 0.257 -93.26 3.758 77.71 0.138 60.19 0.519 -49.35 1800 0.227 -97.38
SANYO Electric
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5271 sanyo Ic 9148 TRANSISTOR C 5857 AN 7323 IC D2502 ma 8630

BT 1840 PA

Abstract: NPN 8 GHz wideband transistor FEATURES Product specification b7E â'" BFG67; BFG67/X , DESCRIPTION BFG67/X (Fig.1) Code: V12 The BFG67 is a silicon npn transistor in a 4-pin, dual-emitter , collector 2 emitter 3 base 4 emitter 2 This transistor is designed for wideband , BFG67; BFG67/X; BFG67R; BFG67/XR NPN 8 G H z wideband transistor LIMITING VALUES In accordance , Semiconductors Product specification BFG67; BFG67/X; BFG67R; BFG67/XR NPN 8 G H z wideband transistor
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BT 1840 PA 53T31 MSB014 MSB035

TLE 4984

Abstract: transistor mcp 6723 Ordering number : ENA1114A 55GN01MA SANYO Semiconductors DATA SHEET 55GN01MA Features · · NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications High cut-off frequency : fT=5.5GHz typ High gain : S21e2=10dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage , 60.19 54.45 48.82 43.51 38.32 33.45 29.00 24.92 21.39 18.07 S12 0.026 0.037 0.060 0.084 0.109 0.134
SANYO Electric
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TLE 4984
Abstract: 55GN01MA Ordering number : ENA1114A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features â'¢ â'¢ High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=10dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions , 1.574 1.472 1.387 1.321 â S21 123.28 104.33 89.00 80.60 73.14 66.41 60.19 54.45 48.82 SANYO Electric
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ma 8630

Abstract: Ic 9148 Ordering number : ENN7326 2SC5647 NPN Epitaxial Planar Silicon Transistor 2SC5647 UHF to S Band Low-Noise Amplifier and OSC Applications · · · Package Dimensions Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2106A : fT=11.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). [2SC5647] 0.75 0.6 0.3 3 , 77.71 0.138 60.19 0.519 -49.35 1800 0.227 -97.38 3.421 72.32 0.152
SANYO Electric
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2SC564 FT115 TA-3664
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