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TPCP8H02 Datasheet

Part Manufacturer Description PDF Type
TPCP8H02 Toshiba Silicon NPN Epitaxial Transistor and Silicon N-Channel MOS FET Original

TPCP8H02

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TPCP8H02 NPN/NMOS TPCP8H02 : mm 0.33±0.05 0.05 M A 5 NPN Nch MOS FET , (Cu : 645mm2 , t =1.6mm) 3: (//) ( / ) () () 1 2006-11-08 TPCP8H02 , RL Vin 0 , < VGS(ON) VthVGS 3 2006-11-08 TPCP8H02 NPN IC ­ VCE hFE ­ IC 1000 3.0 20 mA , 1.0 1.2 VBE (V) 4 2006-11-08 TPCP8H02 rth (j-c) ­ tw rth (j-c) (°C/W -
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8H02
Abstract: TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS DC-DC , handle with caution. 2 1 2006-11-13 2.8±0.1 TPCP8H02 Common Absolute Maximum Rating (Ta = , % IB2 Input IB1 RL Output 2 2006-11-13 TPCP8H02 MOS FET Characteristics Gate leakage current , 2.5 V or higher. 3 2006-11-13 TPCP8H02 NPN IC ­ VCE 3.0 20 mA 2.5 15 mA 10 mA Ta = 100 Toshiba
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Abstract: TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 0.33±0.05 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING , . 1 Start of commercial production 2004-01 2013-11-01 TPCP8H02 Common Absolute Maximum , 2013-11-01 TPCP8H02 MOS FET Characteristics Symbol Test Condition Min Typ. Max Unit , product is 2.5 V or higher. 3 2013-11-01 TPCP8H02 NPN IC â'" VCE hFE â'" IC 1000 3.0 20 Toshiba
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Abstract: TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-12 TPCP8H02 , < 1% IB2 2 2004-07-12 TPCP8H02 MOS FET Characteristics Symbol Min Typ. Max , TPCP8H02 NPN IC ­ VCE hFE ­ IC 3.0 1000 20 mA 15 mA Ta = 100°C 10 mA 8 mA 2.0 DC Toshiba
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Abstract: TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 0.33±0.05 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING , TPCP8H02 Common Absolute Maximum Rating (Ta = 25°C) Characteristics Symbol Rating Unit Tstg , % IB1 RL 20 s Output IB2 2 2006-11-13 TPCP8H02 MOS FET Characteristics Symbol , 2006-11-13 TPCP8H02 NPN IC ­ VCE hFE ­ IC 1000 3.0 20 mA 15 mA 10 mA Ta = 100°C 2.5 Toshiba
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Abstract: 3.5 2SC5738 (T) 4 2SC5714 2SC6125 2SC5976 (T) TPCP8H02 ($)(P) ( ) ( ) (P , TPCP8H02 30 VCE(sat) Max hFE IC (A) IB (mA) Package (V) 0.5 0.2 1.6 53 , /Single TSM 2SA2061 PNP+S-MOS PS-8 *TPCP8H02 *Ultra-high-speed products 11 Battery , TPCP8701 TPCP8901 TPCP8902 TPCP8H02 TPCP8L01 PS-8 VCEO (V) IC (A) NPN/Single 120 1 , TPCP8602 TPCP8604 TPCP8701 TPCP8901 TPCP8902 TPCP8H02 TPCP8L01 TTA0001 TTA0002 TTA003 TTA005 Toshiba
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TTA1943 SMD TRANSISTOR H2A NPN MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA006B 2SA1941 amp circuit
Abstract: TPCP8H01 TPCP8H02 TPCP8F01 (*2,3) (*2,3) (*2) NPN+S-MOS PNP+S-MOS Under development items : It , TR in Strobe Flasher 2SC5906 2SC5976 S3J45 TPCP8H01 TPCP8H02 2SC5738 2SA2061 TPCP8503 2SA1971 Toshiba
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transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 pnp transistor 800v Bjt 60 w 600v .5A DP0540001
Abstract: ( ) (T ) ( ) ( ) ( ) (P ) 2SA2061 (T) 2SC5692 2SC6033 TPCP8602 2SC5976 (T) TPCP8H02 ($)(P) 2SC5712 , 2SC5976 2SC5906 2SC6033 2SC6126 2SC6000 TPCP8511 TPC6D02 TPCP8H02 PW-Mini TSM TSM TSM PW-Mini PW-Mold , *Ultra-high-speed products TSM TSM PS-8 2SC5738, *2SC5976, *2SC5906, *2SC6033 2SA2061 *TPCP8H02 Xe Lamp , TPCP8701 TPCP8901 TPCP8902 TPCP8F01 TPCP8G01 TPCP8H02 TPCP8L01 400 to 1000/200 to 500 200 to 500 200 to , TPCP8604 TPCP8701 TPCP8901 TPCP8902 TPCP8F01 TPCP8G01 TPCP8H02 TPCP8L01 TTA0001 TTA0002 TTA003 TTA005 Toshiba
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2SA114 TO3P package smd transistor h2a amplifier design tta1943 2SD880 2sb834 BCE0016F
Abstract: 2SC5976 2SA1359 2SC3422 TPCP8H02 2SC5738 2SC5714 2SC6125 S3F62 TPCP8601 , 2 TPCP8H02 30 3 1.0 250~400 2 2.5 0.18 2.5 , , *TPCP8H02 SBD VIN ICSBD VOUT VIN PNP Toshiba
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TTC003 2sC5200, 2SA1943 2sC5200 2SA1943 2sc5200 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 SC-63 TTA004 TTA007 TTB001 TTB002 TTC0001
Abstract: TPCP8H02 2SA1020 2SC2655 2SA1241 2SC3076 2SA1382 2SA2056 TPC6601 TPCP8701 W 2SA2060 2SA1428 , 0.13 1.6 53 PS-8 Incorporating S-MOS TPCP8H02 30 3 1.0 250 to 400 2 , Products 2SC5738, *2SC5976, *2SC5906, *2SC6033, *2SC6062 2SA2061 *TPCP8H01, *TPCP8H02 SBD for Toshiba
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2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent 2SC2383 equivalent 2SA1962 equivalent 2sA1013 equivalent BCE0016D
Abstract: 2SC5713 S3F61 4 2SC5976 TPCP8H02 TPCP8601 2SA1242 2SA1357 2SA1431 2SA1359 2SC3422 , 53 PS-8 Incorporating S-MOS TPCP8H02 Package List 2SC6125 30 3 1.0 250 to , , *TPCP8H02 VIN SBD for IC protection VOUT Transistor for charge control VIN PNP Toshiba
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transistor smd H2A 2sa1943 amplifier circuit diagram H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A BCE0016C E-28831
Abstract: TPCP8H02@4 ­ ­ 2SC5906 ­ 2SC5738 2SC5714 2SC6125 ­ 2SC6062 VCEO = 80 V PNP NPN Toshiba
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GT50N324 TC7600FNG TB6584FNG TMP91FU62 TB6819 TA2181AFNG TK5A50D TMPM370/TMP19A71 GT30J122 DIP26 TPD4125K GT60M324
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