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TPCP8H02 Datasheet

Part Manufacturer Description PDF Type
TPCP8H02 Toshiba Silicon NPN Epitaxial Transistor and Silicon N-Channel MOS FET Original

TPCP8H02

Catalog Datasheet MFG & Type PDF Document Tags

TPCP8H02

Abstract: 8H02 TPCP8H02 NPN/NMOS TPCP8H02 : mm 0.33±0.05 0.05 M A 5 NPN Nch MOS FET , (Cu : 645mm2 , t =1.6mm) 3: (//) ( / ) () () 1 2006-11-08 TPCP8H02 , RL Vin 0 , < VGS(ON) VthVGS 3 2006-11-08 TPCP8H02 NPN IC ­ VCE hFE ­ IC 1000 3.0 20 mA , 1.0 1.2 VBE (V) 4 2006-11-08 TPCP8H02 rth (j-c) ­ tw rth (j-c) (°C/W
-
Original
8H02
Abstract: TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS DC-DC , handle with caution. 2 1 2006-11-13 2.8±0.1 TPCP8H02 Common Absolute Maximum Rating (Ta = , % IB2 Input IB1 RL Output 2 2006-11-13 TPCP8H02 MOS FET Characteristics Gate leakage current , 2.5 V or higher. 3 2006-11-13 TPCP8H02 NPN IC ­ VCE 3.0 20 mA 2.5 15 mA 10 mA Ta = 100 Toshiba
Original
Abstract: TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 0.33±0.05 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING , . 1 Start of commercial production 2004-01 2013-11-01 TPCP8H02 Common Absolute Maximum , 2013-11-01 TPCP8H02 MOS FET Characteristics Symbol Test Condition Min Typ. Max Unit , product is 2.5 V or higher. 3 2013-11-01 TPCP8H02 NPN IC â'" VCE hFE â'" IC 1000 3.0 20 Toshiba
Original

8h02

Abstract: TPCP8H02 TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING APPLICATIONS , transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-12 TPCP8H02 , < 1% IB2 2 2004-07-12 TPCP8H02 MOS FET Characteristics Symbol Min Typ. Max , TPCP8H02 NPN IC ­ VCE hFE ­ IC 3.0 1000 20 mA 15 mA Ta = 100°C 10 mA 8 mA 2.0 DC
Toshiba
Original

8H02

Abstract: TPCP8H02 TPCP8H02 TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type TPCP8H02 0.33±0.05 STROBE FLASH APPLICATIONS HIGH-SPEED SWITCHING , TPCP8H02 Common Absolute Maximum Rating (Ta = 25°C) Characteristics Symbol Rating Unit Tstg , % IB1 RL 20 s Output IB2 2 2006-11-13 TPCP8H02 MOS FET Characteristics Symbol , 2006-11-13 TPCP8H02 NPN IC ­ VCE hFE ­ IC 1000 3.0 20 mA 15 mA 10 mA Ta = 100°C 2.5
Toshiba
Original

amplifier circuit using 2sa1943 and 2sc5200

Abstract: SMD TRANSISTOR H2A NPN 3.5 2SC5738 (T) 4 2SC5714 2SC6125 2SC5976 (T) TPCP8H02 ($)(P) ( ) ( ) (P , TPCP8H02 30 VCE(sat) Max hFE IC (A) IB (mA) Package (V) 0.5 0.2 1.6 53 , /Single TSM 2SA2061 PNP+S-MOS PS-8 *TPCP8H02 *Ultra-high-speed products 11 Battery , TPCP8701 TPCP8901 TPCP8902 TPCP8H02 TPCP8L01 PS-8 VCEO (V) IC (A) NPN/Single 120 1 , TPCP8602 TPCP8604 TPCP8701 TPCP8901 TPCP8902 TPCP8H02 TPCP8L01 TTA0001 TTA0002 TTA003 TTA005
Toshiba
Original
amplifier circuit using 2sa1943 and 2sc5200 SMD TRANSISTOR H2A NPN TTA1943 A06 smd transistor MARKING SMD PNP TRANSISTOR Wf TTA006B

transistor 2sc5353

Abstract: 2sa2035 TPCP8H01 TPCP8H02 TPCP8F01 (*2,3) (*2,3) (*2) NPN+S-MOS PNP+S-MOS Under development items : It , TR in Strobe Flasher 2SC5906 2SC5976 S3J45 TPCP8H01 TPCP8H02 2SC5738 2SA2061 TPCP8503 2SA1971
Toshiba
Original
transistor 2sc5353 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A TPC6D02 DP0540001

2SA1941 amp circuit

Abstract: 2SA114 ( ) (T ) ( ) ( ) ( ) (P ) 2SA2061 (T) 2SC5692 2SC6033 TPCP8602 2SC5976 (T) TPCP8H02 ($)(P) 2SC5712 , 2SC5976 2SC5906 2SC6033 2SC6126 2SC6000 TPCP8511 TPC6D02 TPCP8H02 PW-Mini TSM TSM TSM PW-Mini PW-Mold , *Ultra-high-speed products TSM TSM PS-8 2SC5738, *2SC5976, *2SC5906, *2SC6033 2SA2061 *TPCP8H02 Xe Lamp , TPCP8701 TPCP8901 TPCP8902 TPCP8F01 TPCP8G01 TPCP8H02 TPCP8L01 400 to 1000/200 to 500 200 to 500 200 to , TPCP8604 TPCP8701 TPCP8901 TPCP8902 TPCP8F01 TPCP8G01 TPCP8H02 TPCP8L01 TTA0001 TTA0002 TTA003 TTA005
Toshiba
Original
2SA1941 amp circuit 2SA114 TO3P package smd transistor h2a amplifier design tta1943 2SD880 BCE0016F

2sC5200, 2SA1943

Abstract: TPCP8L01 2SC5976 2SA1359 2SC3422 TPCP8H02 2SC5738 2SC5714 2SC6125 S3F62 TPCP8601 , 2 TPCP8H02 30 3 1.0 250~400 2 2.5 0.18 2.5 , , *TPCP8H02 SBD VIN ICSBD VOUT VIN PNP
Toshiba
Original
TTC003 2sC5200, 2SA1943 2sC5200 2SA1943 2sc5200 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 SC-63 TTA004 TTA007 TTB001 TTB002 TTC0001

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent TPCP8H02 2SA1020 2SC2655 2SA1241 2SC3076 2SA1382 2SA2056 TPC6601 TPCP8701 W 2SA2060 2SA1428 , 0.13 1.6 53 PS-8 Incorporating S-MOS TPCP8H02 30 3 1.0 250 to 400 2 , Products 2SC5738, *2SC5976, *2SC5906, *2SC6033, *2SC6062 2SA2061 *TPCP8H01, *TPCP8H02 SBD for
Toshiba
Original
2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent 2SC2383 equivalent 2SA1962 equivalent 2sA1013 equivalent BCE0016D

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN 2SC5713 S3F61 4 2SC5976 TPCP8H02 TPCP8601 2SA1242 2SA1357 2SA1431 2SA1359 2SC3422 , 53 PS-8 Incorporating S-MOS TPCP8H02 Package List 2SC6125 30 3 1.0 250 to , , *TPCP8H02 VIN SBD for IC protection VOUT Transistor for charge control VIN PNP
Toshiba
Original
transistor smd H2A 2sa1943 amplifier circuit diagram H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A BCE0016C E-28831

TC7600FNG

Abstract: TB6584FNG TPCP8H02@4 ­ ­ 2SC5906 ­ 2SC5738 2SC5714 2SC6125 ­ 2SC6062 VCEO = 80 V PNP NPN
Toshiba
Original
GT50N324 TC7600FNG TB6584FNG TMP91FU62 TB6819 TA2181AFNG TK5A50D TMPM370/TMP19A71 GT30J122 DIP26 TPD4125K GT60M324
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