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TPC5663NND03

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Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TPC5663NND03 WBFBP-03B TRANSISTOR TOP (1.2×1.2×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor B E C 1. BASE FEATURES Collector saturation voltage is low. VCE (sat) 250mA At IC =200mA / IB =10mA BACK 2. EMITTER 3. COLLECTOR E B APPLICATION For , =100MHz 320 MHz VCB=10V, IE=0,f=1MHz 7.5 pF Typical Characteristics TPC5663NND03 Jiangsu Changjiang Electronics Technology
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100MH
Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TPC5663NND03 WBFBP-03B TRANSISTOR TOP (1.2×1.2×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor B E C 1. BASE FEATURES Collector saturation voltage is low. VCE (sat) ≤250mA At IC =200mA / IB =10mA BACK 2. EMITTER 3. COLLECTOR E B APPLICATION For switching For muting For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note Jiangsu Changjiang Electronics Technology
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