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Part : TP0606N3-G Supplier : Microchip Technology Manufacturer : Avnet Stock : - Best Price : $0.3934 Price Each : $0.4403
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Part : TP0606N3-G Supplier : Microchip Technology Manufacturer : microchipDIRECT Stock : 14,000 Best Price : $0.82 Price Each : $0.82
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Part : TP0606N3-G Supplier : Supertex Manufacturer : TME Electronic Components Stock : 334 Best Price : $0.47 Price Each : $0.68
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Part : TP0606N3-G Supplier : Microchip Technology Manufacturer : Chip1Stop Stock : 94 Best Price : $0.6620 Price Each : $0.6620
Part : TP0606N3 Supplier : Supertex Manufacturer : Master Electronics Stock : 41 Best Price : $0.39 Price Each : $0.70
Part : TP0606N3-G Supplier : Supertex Manufacturer : Master Electronics Stock : 2,441 Best Price : $0.3970 Price Each : $0.5720
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TP0606N3 Datasheet

Part Manufacturer Description PDF Type
TP0606N3 Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original

TP0606N3

Catalog Datasheet MFG & Type PDF Document Tags

TN0604N3

Abstract: HV5808 N2 VP2206N2 TP0606N3 obs TP0606 N5 - TP0606N3 obs TP0606 N6 - , TP0610 N3 TP0606N3 - obs TP0610 N5 - TP2510N8 obs TP0616 N2 -
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Original
VP0109N3 VP2210 VQ1000 VN3205N6 TN0604N3 HV5808 HV5708 HV50530 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332
Abstract: TP0606N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.5 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case125 Thermal Resistance Junc-Amb.170 V(GS)th Max. (V)2.4 V(GS)th (V) (Min)1.0 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)1m I(DSS) Max. (A American Microsemiconductor
Original

mosfet cross reference

Abstract: pj 929 diode BST110 BST120 VN2210N3 TN0620N3 TP0606N3 VP0109N3 TP2510N8 MFQ6660P MPF480 MPF481 MPF500 , TN0606N3 VN0109N9 TN0610N2 TN0524N3 TP0610L TP0610T TP1220L TP2010L TP2020L TP0606N3 TP0610T , ZVP0204B ZVP0206A VP0109N5 VP0120N3 TP0606N3 TP0610N2 TP0606N3 ZVN0530A ZVN0530B ZVN0535A , ZVP2106C ZVP2106E VP0535N3 TP0606N3 TP0610N2 TP0606N3 TP0606N6 ZVN1206B ZVN1208B ZVN1209B
Supertex
Original
mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode T0-92 TN2101 TN2501 TN0602 TN0702 TN0102

DN2540N5

Abstract: HT0440LG VP0550N3 TN5325K1-G TN5325N3-G TN5325N8-G TN5335K1-G TN5335N8-G TP0604N3-G TP0604WG-G TP0606N3-G , ) TN5325K1 TN5325N3 TN5325N8 TN5335K1 TN5335N8 TP0604N3 TP0604WG TP0606N3 TP0610T TP0620N3 TP2104K1
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Original
DN2540N5 HT0440LG DN2530N3-G DN3135K1-G HT0440LG-G VN10KN3 hv5308pj-b LR8N3-G TN2130K1-G TN2510N8 2N7000 2N7002 2N7008 DN2470K4 DN2530N3 DN2530N8

TP06A

Abstract: ^ Supertex incOrdering Information Standard Commercial Devices TP06A Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs If BVDSS/ BV qgs ^DSfON) V g s (Ui ) Order Number / Package TO-39 TP0606N2 TP0610N2 (max) 3 .5 n 3.5Î2 (max) -2.4V -2.4V TO-92 TP0606N3 TP0610N3 TO-220 TP0606N5 TP0610N5 Quad P-DIP TP0606N6 - Quad C-DIP* TP0606N7 - DICE* TP0606ND TP0610ND -60 V -100V -1.5A -1.5A a v a ila b le * 1 4 p in s id e b r a z e d c e r a m
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OCR Scan

TP0606

Abstract: TP0606N3 TP0606 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS(ON) BVDGS (max) -60V 3.5 ID(ON) (min) VGS(th) (max) Order Number / Package -1.5A -2.4V TP0606N3 TO-92 7 Features Low Threshold DMOS Technology s Low threshold - -2.4V max These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination
Supertex
Original
TP0606/TP0610

TP0606N5

Abstract: S u p e r t e x in c . TP0606 TP0610 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B W B V jx -s -60V -100V ^DS(ON) (max) 3 .5 ft 3 .5 0 If ^GS(lh) (max) -2.4V -2.4V TO-39 - Order Num ber / Package TO-92 TP0606N3 TP0610N3 TO-220 TP0606N5 - -1.5A -1.5A TP0610N2 * 14 pin side b ra z ed cera m ic D IP * * 14*pin plastic D IP High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information
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OCR Scan
Abstract: TP0606 TP0610 Law Threshold g mm\ « « « P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs ^D S(O N ) ^D(ON) ^G S (th ) Order Number / Package TO-39 TP0606N2 TP0610N2 (max) 3.5Q 3.5Q (min) -1.5A -1.5A (max) -2.4V -2.4V TO-92 TP0606N3 TP0610N3 TO-220 TP0606N5 TP0610N5 Quad P-DIP TP0606N6 - Quad C-DIP* TP0606N7 DICE' TP0606ND TP0610ND -60V -100V * 14 pin side brazed ceram ic DIP "I" MIL visual screening available -
OCR Scan

TP0606N5

Abstract: TP0610N5 M Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs TP0606 TP0610 Low Threshold Ordering Information BVDSS/ Bv dgs -60V -100V ^DS(ON) ' d (ON) ^GSfth) Order Number / Package TO-39 TP0606N2 TP0610N2 TO-92 TP0606N3 TP0610N3 TO-220 TP0606N5 TP0610N5 Quad P-DIP TP0606N6 - Quad C-DIP* TP0606N7 - DICE+ TP0606ND TP0610ND (max) 3.5OE 3.5Î2 (min) -1.5A -1.5A (max) -2.4V -2.4V * 14 pin side brazed ceramic DIP t MIL visual screening available mm Low Threshold DMOS Technology
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OCR Scan
042Q0
Abstract: TP0606 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S(ON) I d (ON) ^GS(th) Order Num ber / Package b v dgs (max) (min) (max) TO-92 -60V 3.5Ã2 -1.5A -2.4V TP0606N3 Features â¡ High input impedance â¡ Low input capacitance â'" 80pF typical â¡ Fast switching speeds â¡ Low on resistance â¡ Free from secondary breakdown â¡ Low input and output -
OCR Scan

TP0606

Abstract: TP0606N3 TP0606 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) VGS(th) (max) Order Number / Package -60V 3.5 -1.5A -2.4V TP0606N3 TO-92 Features Low Threshold DMOS Technology Low threshold - -2.4V max These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices
Supertex
Original

TP0606N5

Abstract: TP0610N3 TP0606 TP0610 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS(ON) BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE -60V 3.5 -1.5A -2.4V TP0606N2 TP0606N3 TP0606N5 TP0606N6 TP0606N7 TP0606ND -100V 3.5 -1.5A -2.4V TP0610N2 TP0610N3 TP0610N5 - - TP0610ND 7 * 14 pin side brazed ceramic DIP MIL visual screening available
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Original

TP0610N3

Abstract: TP0606N5 TP0606 TP0610 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS(ON) BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 -60V 3.5 -1.5A -2.4V - TP0606N3 TP0606N5 -100V 3.5 -1.5A -2.4V TP0610N2 TP0610N3 - * 14 pin side brazed ceramic DIP * 14-pin plastic DIP Low Threshold DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process
Supertex
Original

PLCC-6 5050

Abstract: P-Channel mosfet 400v to220 -20 4.37 3.60 3.14 TP0606N3 MOSFET, P-CHANNEL, 60V, 3.5 OHMS. TO-92 0.57 0.47 0.41
Supertex
Original
PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 240v n-channel depletion mosfet MOSFET 400V depletion p channel SA146RS

TCA780

Abstract: TFK U 111 B TN5335K1-G TN5335N8-G TP0604N3-G TP0606N3-G TP0610T-G TP0620N3-G TP2104K1-G TP2104N3-G TP2424N8-G
Temic Semiconductors
Original
TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725

SEMICON INDEXES

Abstract: ss120a ) VP2206N2 -VP2206N2 TP0606N3-G -TP0620N3-G -TP2104K1-G TP2104N3-G -VN2210N2 -VN3205P-G , pkg alt is not close) TP0606N3-G TP0606N3-G (x4) TP0606N3-G (x4) TP0604N3-G TP2510N8-G , -VP2206N2 -TP0620N3-G -TP0620N3-G -VP2206N2 TP0606N3-G -VP2206N2 VP3203N3-G / TP0604N3-G , VP0109N3-G VP0109N3-G VP0109N3-G TP5322K1-G TP5322K1-G TP5322N8-G TP5322N8-G -TP5322N8-G -TP0606N3-G / TP2510N8-G TP0606N3-G / TP2510N8-G TP0604N3-G -TP2640N3-G / TP2640LG-G TP2640N3-G / TP2640LG-G
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OCR Scan
SEMICON INDEXES ss120a AF267 MJ310 2n4121 GES 9515 T0226 T0237

SEMICON INDEXES

Abstract: Ericsson SPO 1410 -20 4.37 3.60 3.14 TP0606N3 MOSFET, P-CHANNEL, 60V, 3.5 OHMS. TO-92 0.57 0.47 0.41
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OCR Scan
Ericsson SPO 1410 tr/NEC Tokin 0d 108 irfp240f LT5202 diode appian adi/2 e420 dual jfet VV276
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