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HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station visit Texas Instruments
TS3DV520ERUAR Texas Instruments Multi-Channel Differential Switch/Multiplexer Targeting DVI/HDMI Applications 42-WQFN visit Texas Instruments Buy
OMAP1611 Texas Instruments Applications Processor visit Texas Instruments
OMAP1610 Texas Instruments Applications Processor visit Texas Instruments
OMAP310 Texas Instruments Applications Processor visit Texas Instruments
RI-UHF-IC116-00 Texas Instruments PACKAGED UHF IC FOR PCB TRACKING APPLICATION 6-USON -40 TO 125 visit Texas Instruments

TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS

Catalog Datasheet MFG & Type PDF Document Tags

3phase ac to 5v dc converter

Abstract: DC to 3Phase converter 2.5V Video 3.3V Mother Boards 5V Ultra High Speed U-MOS III series CPU CORE : TPC8020-H + , CPU AC to DC MEMORY MACH 2Series (VDSS=150 to 250V) OPT?IF Ultra High Speed U-MOS , DP0540034_01 5 Ultra High Speed U ­ MOS III : 20 to 40 V Family Al Strap Structure Feature , Improvement by Ultra High Speed U-MOS Design High Efficiency EFFICIENCY Improvement by @ Vin=19V Vout=1.5V f=300kHz Burst Mode Ta=25 C Ultra High Speed 3phase (High Side : 1pc + Low Side x U-MOS
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TPC8112 TPC8114 TPC8021-H TPC8A01 TPC6003 3phase ac to 5v dc converter DC to 3Phase converter converter DC-DC SOP-8 TOSHIBA TRANSISTORS TPC8018-H TPC8018-H/TPC8A02-H TPCA8005-H TPCA8004-H

2SC4667

Abstract: TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS 2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Computer, Counter Applications · High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · Unit: mm High speed switching time , the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any , Storage temperature range JEDEC JEITA TOSHIBA Marking SC-70 2-2E1A Weight: 0.006 g
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TOSHIBA ULTRA HIGH SPEED SWITCHING APPLICATIONS

TPL621

Abstract: MCP3041 high speed IC photocoupler, the TLP2066, addresses isolation requirements and switching noise elimination in switching power supplies, instrument I/O, computer peripheral interfaces, high speed disk drive I/O, bus drivers for networking applications, and high speed logic systems. For demanding isolation , Transistor Coupler Photorelay TODX2402 High Speed Toslink Line Switch Switching Power Supply , IC Coupler High Speed Toslink TODX2402 Photosensor Switching Power Supply High Density
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TPL621 MCP3041 PC817 SOP-4 cosmo 817 opto coupler TLP250 PC923 APPLICATION NOTES TLP3113 TLP3215 TLP3216 TLP4227G TLP4176G

2SC752

Abstract: 2sc752 equivalent 2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Computer, Counter Applications · High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · Unit: mm High speed switching time: tstg = 15 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating , the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any
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2sc752 equivalent 2SC752G-TM 2sC752 transistor SC-43

2SC3437

Abstract: transistor marking c y 2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications · High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · Unit: mm High speed switching time , Storage temperature range JEDEC TO-236MOD JEITA TOSHIBA Marking SC-59 2-3F1A Weight , Turn-on time Switching time ton ¾ 70 ¾ Storage time tstg ¾ 15 ¾ ¾ 30
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transistor marking c y

2SC752

Abstract: TOSHIBA TRANSISTOR TOSHIBA 2SC752©TM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC752©TM ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS â'¢ High Transition Frequency â'¢ Low Saturation Voltage â'¢ High Speed Switching Time MAXIMUM RATINGS (Ta = 25°C) fT = 400MHz (Typ , . EMITTER 2. COLLECTOR 3. BASE JEDEC TO-92 EIAJ SC-43 TOSHIBA 2-5F1B Weight : 0.21g 1 2001-05-31 TOSHIBA 2SC752©TM ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN
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TOSHIBA TRANSISTOR transistor sf 127 400MH
Abstract: TO SH IB A 2SC3437 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3437 U nit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS â'¢ â'¢ â'¢ High Transition Frequency Low Saturation Voltage High Speed Switching Time fp = 400MHz , only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA , mW °C °C 1. 2. 3. BASE EMITTER COLLECTOR TO-236MOD JEDEC EIAJ SC-59 TOSHIBA -
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961001EAA1

2sK2750 equivalent

Abstract: 2SK3567 equivalent 6 ­ 28 35 41 ­ 19 1420 S2E U-MOSIII S2F Ultra High speed U-MOSIII , U-MOSIV Ultra High speed U-MOSIII Ultra High speed U-MOSIII U-MOSIII U-MOSIII U-MOSIII U-MOSVI , 1600 4600 7880 1190 4300 Remark Ultra High speed U-MOSIII Ultra High speed U-MOSIII Ultra High speed U-MOSIII Ultra High speed U-MOSIII U-MOSV-H* Ultra High speed U-MOSIII U-MOSIII U-MOSIII U-MOSIII -MOSVII Ultra High speed U-MOSIII -MOSV -MOSV -MOSV U-MOSIII U-MOSIII U-MOSIV
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2sK2750 equivalent 2SK3567 equivalent 4614 mosfet 2SK3799 equivalent TPC8107 application circuit 2SK3561 equivalent POWERMOSFET07 TPC6004 TPC6005 TPC6006-H TPC6105 TPC6107

toshiba UFS

Abstract: GT15J121 TOSHIBA Preliminary GT15J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT15J121 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) :tr=0.03s(typ.) High speed :tf=0.08s(typ.) :Eon=0.23mJ(typ.) Low switching loss :Eoff=0.18mJ(typ , Tstg 150 -55150 A 2001-7- 1/2 TOSHIBA GT15J121 Preliminary Electrical
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GT15J321 toshiba UFS

2SC4667

Abstract: 2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Computer, Counter Applications · · · High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns (typ.) Unit , (e.g. the application of high TOSHIBA 2-2E1A temperature/current/voltage and the significant change in , applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other
Toshiba
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2SC4667

Abstract: TOSHIBA 2SC4667 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 4 6 6 7 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATIONS. â'¢ High Transition Frequency : fr = 400MHz (Typ.) â'¢ Low Saturation Voltage : Vqe (sat) = 0-3V (Max.) â'¢ High Speed Switching , . BASE 2. EMITTER 3. COLLECTOR JEDEC EIAJ SC-70 TOSHIBA 2-2E1A Weight : 0.006g oo + I rt© öö +1 1 2001-05-31 TOSHIBA 2SC4667 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL
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Abstract: HN3C61FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C61FU Ultra High Speed Switching Application Computer, Counter Applications. High Transition Frequency Low Saturation Voltage Unit: mm : fT = 400MHz(Typ.) : VCE(sat) = 0.3V(Max.) : tstg = 15ns(Typ.) High Speed Switching , applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other , .BASE1 (C1) (E1) (C2) (E2) (B2) (B1) Using continuously under heavy loads (e.g. the application of high Toshiba
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2SC3437

Abstract: 2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications · High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · Unit: mm High speed , : Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current , TOSHIBA products listed in this document are intended for usage in general electronics applications
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2SC343

HN3C61FU

Abstract: HN3C61FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C61FU Ultra High Speed Switching Application Computer, Counter Applications. High Transition Frequency Unit: mm : fT = 400MHz(Typ.) Low Saturation Voltage : VCE(sat) = 0.3V(Max.) High Speed Switching Time : tstg , applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or , ) (E2) (B2) (B1) JEDEC JEITA TOSHIBA 2-2J1A Weight: 6.8mg(typ.) Electrical
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2Sc752

Abstract: 2SC752G-TM 2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Computer, Counter Applications · · · High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: VCE (sat) = 0.3 V (max) High speed switching time: tstg = 15 ns , applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other , high temperature/current/voltage and the significant change in JEDEC TO-92 temperature, etc.) may cause
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2SC3437

Abstract: TOSHIBA 2SC3437 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 3 4 3 7 ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS â'¢ High Transition Frequency â'¢ Low Saturation Voltage â'¢ High Speed Switching Time MAXIMUM RATINGS (Ta = 25°C) fT = 400MHz (Typ , -59 TOSHIBA 2-3F1A Weight : 0.012g 1 2001-05-31 TOSHIBA 2SC3437 ELECTRICAL CHARACTERISTICS (Ta = 25 , Collector Output Capacitance Cob Vcb = 10V, IE = 0, f= 1MHz â'" 4 6 pF Switching Time Turn-on Time ton
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5DL41

Abstract: 5DL41 TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5DL41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Toshiba high speed and high efficiency rectifiers, 5DL41, are specially designed for switching power supplies. These rectifiers are suitable for 9 to 24V power supplies to obtain high frequency and high efficiency. l Repetitive Peak Reverse Voltage : VRRM = 200V l Average Forward Current : IF (AV) = 5A l Ultra Fast Reverse-Recovery
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2sc752 k

Abstract: 2SC752 TOSHIBA TOSHIBA TRANSISTOR 2SC752©TM ULTRA HIGH SPEED SWITCHING APPLICATIONS COMPUTER, COUNTER APPLICATIONS 2SC752©TM SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm . 5.1 MAX. · · · High Transition Frequency frp= 400MHz (Typ.) Low Saturation Voltage v CE(sat) = °-3V (Max.) High Speed Switching Time tstg=15ns (Typ.) 0.45 0.55 MAX. 0.45 1.27 1.27 M A X IM U M , UNIT V V V mA mA mW °C °C 1. 2. 3. EMITTER COLLECTOR BASE TO-92 JEDEC EIAJ SC-43 TOSHIBA
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2sc752 k

2SC4667

Abstract: TOSHIBA 2SC4667 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2 S C 4 6 6 7 ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATIONS. â'¢ High Transition Frequency : Pp = 400MHz (Typ.) â'¢ Low Saturation Voltage : Vqe (sat) = 0-3V (Max.) â'¢ High Speed Switching , guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any , 2. emitter 3. collector JEDEC EIAJ SC-70 TOSHIBA 2-2E1A Weight : 0.006g 961001EAA2 #
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Abstract: HN3C61FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C61FU Ultra High Speed Switching Application Computer,Counter Applications. High Transition Frequency Unit: mm : fT = 400MHz(Typ.) Low Saturation Voltage : VCE(sat) = 0.3V(Max.) High Speed Awitching Time : tstg , presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for , TOSHIBA Weight: 6.8mg (C1) (E2) (C2) (E2) (B2) (B1) â'• â'• 2-2J1A Electrical Toshiba
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