NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: 2SA1020 2SA1020 PNP 2 1 3 1. EMITTER 2. COLLECTOR 3. BASE 1 V CEO 2 3 TO-92MOD Value -50 -50 -5 -2,0 900 1 7.25 138 2SA1020 2SA1020=A1020 A1020 -10 -40 -5.0 1 WEITRON http://www.weitron.com.tw -50 -0.1 u -0.1 u 2SA1020 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 , 2SA1020 2SA1020 C FIG7 FIG9 WEITRON http://www.weitron.com.tw C FIG8 2SA1020 2SA1020 TO-92MOD , B L WEITRON http://www.weitron.com.tw TO-92MOD Min Max 5.100 4.700 2.030 1.730 ... | Original |
5 pages, |
IC1500 5100 b2 2SA1020 datasheet a1020 datasheet TO92mod A1020(Y)T TO-92MOD 2SA1020 TO92-MOD A1020 Y pnp A1020 a1020 pnp A1020 Y 2SA1020 abstract |
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| Abstract: 2SC2655 2SC2655 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICSTamb=25 Symbol Parameter Test unless otherwise conditions specified MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100A,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic=10mA,IB=0 , ://www.weitron.com.tw 1/2 19-Feb-09 2SC2655 2SC2655 TO-92MOD Outline Dimensions unit:mm G J TO-92MOD Dim ... | Original |
2 pages, |
2sc2655 2SC2655 2SC2655 abstract |
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| Abstract: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SB764 2SB764 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25) 3. BASE Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX ... | Original |
1 pages, |
TO-92MOD 2SB764 datasheet abstract |
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| Abstract: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SB985 2SB985 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 1 W (Tamb=25) 3. BASE Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX ... | Original |
1 pages, |
TO-92MOD 2SB985 datasheet abstract |
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| Abstract: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1283 2SA1283 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation PCM : 0.9 2. COLLECTOR W (Tamb=25) 3. BASE Collector current A ICM : -1 Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX ... | Original |
1 pages, |
TO-92MOD 2SA1283 datasheet abstract |
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| Abstract: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SC2060 2SC2060 TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25) 3. BASE Collector current 1 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX UNIT ... | Original |
1 pages, |
2sc2060 datasheet abstract |
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| Abstract: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA966 2SA966 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation PCM : 0.9 2. COLLECTOR W(Tamb=25) 3. BASE Collector current A ICM : -1.5 Collector-base voltage V V(BR)CBO : -30 Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX ... | Original |
1 pages, |
2SA966 datasheet abstract |
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| Abstract: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SB892 2SB892 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25) 3. BASE Collector current -2 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX UNIT ... | Original |
1 pages, |
2SB892 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSC2316 KSC2316 TO-92MOD TRANSISTOR (NPN) FEATURES · Driver stage amplifier · Complement to KSA916 KSA916 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA ... | Original |
2 pages, |
KSC2316 KSA916 KSC2316 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC1627A 2SC1627A TRANSISTOR (NPN) 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA817A 2SA817A Driver Stage Application of 30 to 35 Watts Amplifiers 3. BASE MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol parameter Value 123 Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC ... | Original |
2 pages, |
2SC1627A 2SA817A datasheet abstract |
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| Abstract: TO92mod RENESAS Code PRSS0003DC-A PRSS0003DC-A Previous Code TO-92 Mod / TO-92 ModV 4.8 ± 0.4 MASS[Typ.] 0.35g Unit: mm 0.65 ± 0.1 0.75 Max 0.60 Max 0.55 Max 1.27 2.54 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 2.3 Max JEITA Package Code SC-51 SC-51 0.7 Package Name TO-92 Mod 0.5 Max ... | Original |
1 pages, |
PRSS0003DC-A SC-51 SC-51 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors KSA910 KSA910 TRANSISTOR (PNP) TO-92MOD FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM: 0.8 W (Tamb=25) 3. BASE Collector current ICM: -0.05 A Collector-base voltage -150 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP ... | Original |
1 pages, |
TO-92MOD KSA910 KSA910 abstract |
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| Abstract: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SB740 2SB740 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25) 3. BASE Collector current -1 A ICM: Collector-base voltage -70 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 123 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX ... | Original |
1 pages, |
2SB740 datasheet abstract |
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| Abstract: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SC1627A 2SC1627A TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.8 W (Tamb=25) 3. BASE Collector current ICM: 0.4 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX UNIT ... | Original |
1 pages, |
2SC1627A datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1283 2SA1283 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation PCM : 0.9 2. COLLECTOR W (Tamb=25) 3. BASE Collector current A ICM : -1 Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX ... | Original |
1 pages, |
2SA1283 datasheet abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2060 2SC2060 TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.75 W (Tamb=25) 3. BASE Collector current 1 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX ... | Original |
1 pages, |
2sc2060 2SC2060 2SC2060 abstract |
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| Abstract: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1627A 2SC1627A TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.8 W (Tamb=25) 3. BASE Collector current ICM: 0.4 A Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN MAX ... | Original |
1 pages, |
2SC1627A datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Microsoft Excel 5.0-Tabelle AUDIO LSTM (TO-92 MOD) LSTM (TO-92 MOD) Benutzerdefinierte Seite 1 Benutzerdefinierte Seite 2 Benutzerdefinierte Seite 3 VCEO (V) VCEO GENERAL PURPOSE VCEO (V) VCEO Katalog CD TOSHIBA LSTM Dirk Krause Microsoft Excel www.datasheetarchive.com/download/7405639-946835ZC/lstm.xls |
Toshiba | 30/10/1996 | 14 Kb | XLS | lstm.xls |
| * * Copyright Intusoft 1988-1997 * All Rights Reserved * * *SRC=BCY59X BCY59X BCY59X BCY59X;BCY59X BCY59X BCY59X BCY59X;BJTs NPN;Amplifier;32V 200mA .MODEL BCY59X BCY59X BCY59X BCY59X NPN (IS=19.9F NF=1 BF=551 VAF=120 IKF=.35 ISE=2.35P NE=2 + BR=4 NR=1 VAR=28 IKR=.525 RE=.315 RB=1.26 RC=.126 XTB=1.5 + CJE=13.5P VJE=1.1 MJE=.5 CJC=9.59P VJC=.3 MJC=.5 TF=530P TR=170N) * Motorola 45 Volt .2 Amp 300 MHz SiNPN Transistor 09-09-1991 *PINOUT TO-18 3 2 1 * *SRC=BC338 BC338 BC338 BC338;BC338 BC338 BC338 BC338;BJTs NPN;Amplifier;25V 500mA .MODEL BC www.datasheetarchive.com/files/spicemodels/misc/modelos/spice_complete/bjtn.lib |
Spice Models | 18/04/2010 | 92.14 Kb | LIB | bjtn.lib |
| 1 @pinout t TO92L g 1 p D 1 p G 2 p S 3 *package TO92-M @types 1 g 1 @attributes @pinout t TO92MOD,2 www.datasheetarchive.com/files/spicemodels/misc/models/jjfet.plb |
Spice Models | 01/09/2003 | 9.93 Kb | PLB | jjfet.plb |
| * Library of diode model parameters * * Copyright 1989-1995 by MicroSim Corporation * Neither this library nor any part may be copied without the express * written consent of MicroSim Corporation * * $Revision: 1.23.1.0 $ * $Author: MSB $ * $Date: 09 Sep 1996 09:00:06 $ *- * MicroSim Corporation would like to acknowledge Sandia National Laboratories * for the contribution of their measurement-based www.datasheetarchive.com/files/spicemodels/misc/schematics_layouts/diode.lib |
Spice Models | 17/06/1998 | 619.54 Kb | LIB | diode.lib |
| * Library of diode model parameters * * Copyright OrCAD, Inc. 1998 All Rights Reserved. * * $Revision: 1.27 $ * $Author: rperez $ * $Date: 04 Nov 1998 09:51:08 $ *- * OrCAD Incorporated would like to acknowledge Sandia National Laboratories * for the contribution of their measurement-based models included in this * library. *- www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/diode.lib |
Spice Models | 29/07/2012 | 634.77 Kb | LIB | diode.lib |
| * Library of diode model parameters * * Copyright Cadence Design Systems, Inc. 2002 All Rights Reserved. * * * $Revision: 1.3 $ * $Author: HIRASUNA $ * $Date: 11 May 2000 13:26:32 $ *- * Cadence Design Systems, Inc. would like to acknowledge Sandia National * Laboratories for the contribution of their measurement-based models * included in this library. * The parameters in this model library were www.datasheetarchive.com/files/spicemodels/misc/diode.lib |
Spice Models | 09/10/2003 | 634.72 Kb | LIB | diode.lib |