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TO-220AB transistor package

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Abstract: Power Transistor For Switching Power Supply Applications The MJE/M JF18008 JF18008 have an applications , Distributions are Consistent Lot-to-Lot Two Package Choices: Standard T 0 -2 2 0 or Isolated TO -220 MJF18008 MJF18008 , CASE 221A-06 TO-220AB MJE18008 MJE18008 - PD TJ' Tstg 125 1.0 4500 3500 1500 45 0.36 Volts Watts W , for future use and best overall value. REV 1 3-742 Motorola Bipolar Power Transistor Device Data , Time M S - - ns - Motorola Bipolar Power Transistor Device Data 3-743 M JE ... OCR Scan
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8 pages,
286.35 Kb

transistor 3746 MJF1800B TEXT
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Abstract: PD - 91600A IRG4BC20K IRG4BC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR , motor controls possible · This part replaces the IRGBC20K IRGBC20K and IRGBC20M IRGBC20M devices TO-220AB Absolute , nH Measured 5mm from package 450 - VGE = 0V 61 - pF VCC = 30V See Fig. 7 14 - = , width 80us; duty factor 0.1%. U Pulse width 5.0us, single shot. Case Outline and Dimensions TO-220AB , 0.55 (.0 22) 0.46 (.0 18) 2.92 (.115 ) 2.64 (.104 ) 2X CONFORMS TO JEDEC OUTLINE TO-220AB D ... International Rectifier
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datasheet

8 pages,
134.88 Kb

IRGBC20M IRGBC20K IRG4BC20K TEXT
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Abstract: 5.0 10 6.0 75 0.6 -55 to +150 Unit Vdc Vdc Vdc Adc Adc W W/°C °C 1 2 3 TO-220AB CASE 221A-09 STYLE , must be observed. MJExx55T = Device Code xx = 29 or 30 G = Pb-Free Package A = Assembly Location Y = , package dimensions section on page 3 of this data sheet. *For additional information on our Pb-Free , ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the ... ON Semiconductor
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datasheet

4 pages,
130.51 Kb

transistor MJE3055T MJE30*T MJE305 MJE2955TG mje2955t MJE2955T MJE3055T TEXT
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Abstract: Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2 .8 7 ( .1 1 3 ) 2 .6 2 , ( See AN 1001) VDSS Rds(on) max ID 600V 1.2Ω 6.2A TO-220AB G DS Absolute , Transistor Forward 6/24/99 Notes  through … are on page 8 Document Number: 90145 , R S . Part Marking Information TO-220AB E X A M P L E : TH IS IS A N IR F 1 0 1 0 W IT H A S S ... International Rectifier
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datasheet

9 pages,
124.52 Kb

-91885A IRFBC40A TEXT
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Abstract: TJ, Tstg -55 to +150 °C Symbol Max Unit qJC 1.67 °C/W TO-220AB CASE , Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For , 5.0 ms 1.0ms There are two limitations on the power handling ability of a transistor: average , transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to ... ON Semiconductor
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datasheet

4 pages,
130.01 Kb

MJE3055TG MJE3055T MJE2955TG MJE2955T TEXT
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Abstract: BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features · High short circuit rating , TO-220AB Absolute Maximum Ratings Parameter VCES I C @ T C = 25°C I C @ T C = 100°C I CM I , from package 920 - VGE = 0V 110 - pF VCC = 30V See Fig. 7 27 - = 1.0MHz 42 60 ns TJ , Outline TO-220AB 2.87 (.113) 2.62 (.103) 10.5 4 ( .415 ) 10.2 9 ( .405 ) 4 3.7 8 (.14 9 , EC OU TLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s) WORLD HEADQUARTERS: 233 ... International Rectifier
Original
datasheet

10 pages,
237.32 Kb

IRGBC30MD2 IRGBC30KD2 irg4bc30kd IRG4BC30KD TEXT
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Abstract: in the JEDEC TO-220AB (VERSAWATT) plastic package. Fig. 1-Schem atic diagram fo r a ll types . , DESIGNATIONS Applications: Hammer drivers Series and shunt regulators Audio amplifiers JEDEC TQ-220AB , DARLINGTON TRANSISTOR UNDER TEST TRANSISTORS INPUT CHRONETICS PULSE GENERATOR MODEL No. PG-31 PG-31. OR ... OCR Scan
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6 pages,
255.88 Kb

2n6532 2N6533 2N6530 2N6531 2N6532 TEXT
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Abstract: Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRF820A IRF820A Package Outline TO-220AB , (See AN 1001) VDSS RDS(on) max ID 3.0 2.5A 500V l TO-220AB GDS Absolute , (1.6mm from case ) 10 lbf·in (1.1N·m) Typical SMPS Topologies: l l Two transistor Forward Half , U RRS . Part Marking Information TO-220AB E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A ... International Rectifier
Original
datasheet

8 pages,
102.69 Kb

IRF820A mosfet h bridge 25a TEXT
datasheet frame
Abstract: N-Channel HEXFETS www.irf.com 7 IRF840A IRF840A Package Outline TO-220AB Outline Dimensions are shown , AN1001 AN1001) VDSS Rds(on) max ID 500V 0.85 8.0A l TO-220AB G DS Absolute Maximum , from case ) 10 lbf·in (1.1N·m) Typical SMPS Topologies: l l l Two Transistor Forward Haft , Part Marking Information TO-220AB E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y ... International Rectifier
Original
datasheet

8 pages,
92.57 Kb

MOSFET IRF 1018 Datasheet AN1001 IRF840A TEXT
datasheet frame
Abstract: PD - 9.1629 IRG4BC30W IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C · , recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220AB , "tail" - mJ See Fig. 11,13, 14 - nH Measured 5mm from package - VGE = 0V - pF VCC = 30V , ) t=5u s E on E o ff E ts = ( Eon +E off ) IRG4BC30W IRG4BC30W Case Outline and Dimensions TO-220AB , (.0 2 2) 0 .4 6 (.0 1 8) 2.9 2 (.1 15 ) 2.6 4 (.1 04 ) 2X CONFORMS TO JED EC OU TLINE TO-220AB ... International Rectifier
Original
datasheet

8 pages,
173.25 Kb

IRG4BC30W TEXT
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Datasheet Package & Models Samples & Pricing Application Notes Parametric Table Printing Problems . Package Availability, Models, Samples & Pricing Part Number Package Status Models Samples & Electronic Orders Budgetary Pricing Std Pack Size Package Marking two input voltages: Vbias provides voltage to drive the gate of the N-MOS power transistor, while Vin extremely low quiescent current at any output load current. The use of an N-MOS power transistor results in
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BFR92AW BFR92AW     NPN 5 GHz wideband transistor Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW BFR92AW uses the same excellent reliability SOT323 (S-mini) package. It is designed for use in RF ) Marking/Packing Specific Package Device Status BFR92AW BFR92AW BFR92AW BFR92AW T/R 9340 229 40115 Standard BFR92AW BFR92AW NPN 5 GHz wideband transistor 18-Sep-95 Product Specification 12 74.1
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Description Features Datasheet Package & Models Samples & Pricing Reliability Metrics Printing Problems . Package Availability, Models, Samples & Pricing Part Number Package Status Models Samples & Electronic Orders Budgetary Pricing Std Pack Size Package Marking Format Type Pins MSL Pb-Free Availability Lead Time Qty SPICE voltages: Vbias provides voltage to drive the gate of the N-MOS power transistor, while Vin is the input
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