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Part Manufacturer Description Datasheet BUY
CC3000YFVR Texas Instruments CC3000 126-DSBGA visit Texas Instruments
LMT84LPC Texas Instruments ANALOG TEMP SENSOR-VOLTAGE, 2.70Cel, RECTANGULAR, SCREW MOUNT, THROUGH HOLE MOUNT, PLASTIC, TO-126, 3 PIN visit Texas Instruments
LMT85LPC Texas Instruments LMT85 - SC70, Analog Temperature Sensor with Class-AB Output 3-TO-126 -50 to 150 visit Texas Instruments
LMT87LPC Texas Instruments LMT87 - SC70, Analog Temperature Sensor with Class-AB Output 3-TO-126 -50 to 150 visit Texas Instruments
LMT86LPC Texas Instruments ANALOG TEMP SENSOR-VOLTAGE, 2.70Cel, RECTANGULAR, THROUGH HOLE MOUNT, TO-126, 3 PIN visit Texas Instruments
2-1601059-2 TE Connectivity (2-1601059-2) 131-126-025=TAB,110X020,STDSMZ visit TE Connectivity

TO-126 fairchild

Catalog Datasheet MFG & Type PDF Document Tags

DG8 Transistor

Abstract: LME49830 -35 Fairchild Semiconductor 1N5242BTR DG1, DG2, DG3, DG4, DG5, DG6, DG7, DG8 10V 5% 1W Zener diode, DO-41 Fairchild Semiconductor 1N4740A U1 200V Complementary MOSFET power amplifier input stage National Semiconductor LME49830TB QVBE1 80V 1.5A NPN transistor, TO-126 Fairchild Semiconductor BD13916STU Q1, Q3 200V 12A N-Channel MOSFET, 150W, TO-3PL (2-21F1B
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LME49830 EF125WT1 MFR-25FBF-249R DG8 Transistor MFR Yageo Yageo KobiConn fairchild dg5 ECQ-E2104KF EEU-FC2A471 CD15ED200J03 CD15ED300J03

LM49830

Abstract: 150w audio amplifier circuit diagram class AB , TO-126 Fairchild Semiconductor BD13916STU Q1, Q3 200V, 12A N-Channel MOSFET, 150W , -35 Fairchild Semiconductor 1N5242BTR DG1, DG2, DG3, DG4, DG5, DG6, DG7, DG8 10V 5% 1W Zener diode, DO-41 Fairchild Semiconductor 1N4740A National Semiconductor LME49830TB U1
National Semiconductor
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AN-1850 LM49830 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM lm4702 OUTPUT STAGE INFORMATION

LM49830

Abstract: Audio Power Amplifier MOSFET TOSHIBA , TO-126 Fairchild Semiconductor BD13916STU Q1, Q3 200V, 12A N-Channel MOSFET, 150W , -35 Fairchild Semiconductor 1N5242BTR DG1, DG2, DG3, DG4, DG5, DG6, DG7, DG8 10V 5% 1W Zener diode, DO-41 Fairchild Semiconductor 1N4740A National Semiconductor LME49830TB U1
National Semiconductor
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Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 300w mosfet audio amplifier circuit diagram high power fet amplifier schematic 450w power supply schematic diagram

400w pfc

Abstract: 230V ac to 36V dc converter circuit diagram capability of 110%, Mg_max is increased to 1.15 × 110% = 1.26. TIDU789 â'" March 2015 Submit , Mg_ap = 1.3, which is greater than Mg_max = 1.26. Any other Ln curve which is not shown in Figure 3
Texas Instruments
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UCC25600 400w pfc 230V ac to 36V dc converter circuit diagram rr 681k- 1kv capacitor TIDA-00355 UCC28180 UCC27714 UCC28722 TLV70450

QBD135

Abstract: bd139 BD136, BD138 and BD140 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial , Base-Emitter ON Voltage hFE Classification Classification hFE3 ©2000 Fairchild Semiconductor International , 150 175 TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD135/137/139 Package Demensions TO-126 ±0.10 3.90 8.00 , ±0.20 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International
Fairchild Semiconductor
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BD135 QBD135 bd139 BD13916S bd135 to-126 Cross-Reference DATE transistor cross reference BD137 BD139 BD13510S BD1356S BD1356STU

TO126

Abstract: of ic BD140 BD135, BD137 and BD139 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial , hFE3 6 40 ~ 100 10 63 ~ 160 16 100 ~ 250 ©2000 Fairchild Semiconductor International Rev. A , TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD136/138/140 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 , 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A
Fairchild Semiconductor
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BD13610S TO126 of ic BD140 BD139 TRANSISTOR bd140 Complement BD139 pspice BD13610STU BD1366S BD13616S BD1366STU BD13616STU

bd379

Abstract: BD37916STU =25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD375 : BD377 : BD379 1 TO-126 , =2% Pulsed hFE Classification Classification hFE1 ©2000 Fairchild Semiconductor International 6 40 , Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 VCEO MAX. 100 BD379 BD377 BD375 BD375/377/379 Package Demensions TO-126 ±0.10 3.90 , ±0.20 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International
Fairchild Semiconductor
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BD376 BD37916STU BD37525STU BD377-10 BD378 BD380 BD3796STU BD37925STU
Abstract: KSC2688 KSC2688 Color TV Chroma Output & Video Output 1 TO-126 2.Collector 3.Base 1 , Classification hFE R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 G 160 ~ 250 ©2000 Fairchild Semiconductor International , TEMPERATURE Figure 3. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2688 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX , Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS Fairchild Semiconductor
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PW350 KSC2688YSTSSTU KSC2688YSTU KSC2688OSTU KSC2688YS KSC2688OS

D882Y

Abstract: D882-y TO-126 3 RAIL * Fairchild 1,000 piece Budgetary Pricing * A sample button will appear if , TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings , Fairchild Semiconductor International Rev. A, February 2000 KSD882 Typical Characteristics 2.0 , Fairchild Semiconductor International Rev. A, February 2000 KSD882 Typical Characteristics , Operating Areas Figure 8. Power Derating ©2000 Fairchild Semiconductor International Rev. A
Fairchild Semiconductor
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D882-R KSD882YSTU D882Y D882-y D882R TRANSISTOR D882-y KSB772 KSD882RS KSD882YS D882-Y KSD882YSTSSTU

KSE340

Abstract: kse340stu Fairchild Semiconductor International Rev. A1, December 2000 KSE340 Package Demensions TO-126 , /A TO-126 3 RAIL Line 1: $Y (Fairchild logo) &3 (3-Digit Date Code) Line 3: KSE340 , Voltage · Suitable for Transformer · Complement to KSE350 1 TO-126 2.Collector 3.Base 1. Emitter , , IC = 0 VCE = 10V, IC = 50mA 30 Min. 300 Max. 100 100 240 Units V µA µA ©2000 Fairchild , ] 13.06 16.10 ±0.20 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild
Fairchild Semiconductor
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kse340stu KSE340S KSE340STSTU KSE340STU

c3503d

Abstract: C3503-D Complement to 2SA1381/KSA1381. Absolute Maximum Ratings* Symbol TO-126 1 1. Emitter 2 , E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 © 2008 Fairchild Semiconductor , 2SC3503C TO-126 TUBE hFE1 C grade 2SC3503DSTU 2SC3503D TO-126 TUBE hFE1 D grade 2SC3503ESTU 2SC3503E TO-126 TUBE hFE1 E grade 2SC3503FSTU 2SC3503F TO-126 TUBE hFE1 F grade KSC3503CSTU C3503C TO-126 TUBE hFE1 C grade KSC3503DSTU C3503D TO-126
Fairchild Semiconductor
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C3503-D 2SC3503 c3503 C3503E 2sc3503 spice KSA1381 spice model 2SC3503/KSC3503 150MH

BD681 cross reference

Abstract: bd677as Medium Power Darlington TR · Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 2 , ) * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A , [ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD675A/677A/679A/681 Package Demensions TO-126 ±0.10 3.90 8.00 , ±0.20 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International
Fairchild Semiconductor
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BD681 cross reference bd677as BD679AS 679a BD675A BD677A BD679A BD681 BD675A/677A/679A BD681STU

KSC2690A

Abstract: KSC2690AYS KSA1220/KSA1220A 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor , Classificntion Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 ©2000 Fairchild Semiconductor , Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area ©2000 Fairchild , Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2690/2690A Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10
Fairchild Semiconductor
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KSC2690A KSC2690AYS KSC2690 KSC2690AOS KSC2690AOSTSTU KSC2690AYSTSTU

TO-126 fairchild

Abstract: 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum , O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A , Gain Bandwidth Product Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International , ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB772 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20
Fairchild Semiconductor
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TO-126 fairchild KSB772YS KSB772YSTSTU KSB772OS KSB772YSTSSTU KSB772YSTU

d1691

Abstract: d1691-y (Fairchild logo) &3 (3-Digit Date Code) Line 3: D1691-Y N/A KSD1691OS Full Production $0.316 TO-126 , High Power Dissipation: PC = 1.3W (Ta=25°C) · Complementary to KSB1151 1 TO-126 2.Collector 3 , % Pulsed hFE Classificntion Classification hFE 2 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400 ©2000 Fairchild , . Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International Rev. A, February , . Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1691
Fairchild Semiconductor
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D1691-G d1691 D1691-O KSD1691YS KSD1691YSTSTU KSD1691YSTU KSD1691GS

A1381E

Abstract: 2SA1381 Full thermal and electrical Spice models are available Complement to 2SC3503/KSC3503 1 TO-126 2 , Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A 1 www.fairchildsemi.com 2SA1381/KSA1381 - , A1381E A1381F Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 Packing Method TUBE , character as packing method. © 2007 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A 2 , . Base-Emitter On Voltage © 2007 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A 3
Fairchild Semiconductor
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2SA1381 pnp transistor crt high definition KSA1381FSTU A1381D
Abstract: FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mâ"¦ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductorâ'™s proprietary planar , electronic lamp ballasts. â'¢ 12.6 A, 800 V, RDS(on) = 750 mâ"¦ (Max.) @ VGS = 10 V, ID = 6.3 A â'¢ Low , Continuous (TC = 25°C) 12.6 A IDM Drain Current - Pulsed VGSS Gate-Source Voltage , Avalanche Energy (Note 2) 1100 mJ IAR Avalanche Current (Note 1) 12.6 A EAR Fairchild Semiconductor
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C3503D

Abstract: c3503-d (Fairchild logo) KSC3503DSTSSTU Full Production $0.153 TO-126 3 RAIL &3 (3-Digit Date , KSC3503ESTU Full Production $0.153 TO-126 3 RAIL N/A * Fairchild 1,000 piece Budgetary , Capacitance : Cre=1.8pF @ VCB=30V 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon , hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 ©2000 Fairchild Semiconductor International Rev , Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance ©2000 Fairchild
Fairchild Semiconductor
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KSC3503 C3503-C KSC3503DS KSC3503DSTSTU KSC3503CS

C3503D

Abstract: 2sc3503 Full thermal and electrical Spice models are available Complement to 2SA1381/KSA1381. 1 TO-126 2 , Classification Classification hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 © 2007 Fairchild , 2SC3503D 2SC3503E 2SC3503F C3503C C3503D C3503E C3503F Package TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 Packing Method TUBE TUBE TUBE TUBE TUBE TUBE TUBE TUBE Remarks hFE1 C grade , "TU" could be replaced to other suffix character as packing method. © 2007 Fairchild Semiconductor
Fairchild Semiconductor
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TO126 package

Abstract: available â'¢ Complement to 2SA1381/KSA1381. Absolute Maximum Ratings* Symbol TO-126 1 1 , C D E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 © 2008 Fairchild , * Marking Package Packing Method Remarks 2SC3503CSTU 2SC3503C TO-126 TUBE hFE1 C grade 2SC3503DSTU 2SC3503D TO-126 TUBE hFE1 D grade 2SC3503ESTU 2SC3503E TO-126 TUBE hFE1 E grade 2SC3503FSTU 2SC3503F TO-126 TUBE hFE1 F grade KSC3503CSTU
Fairchild Semiconductor
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TO126 package
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