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Part : TN3019A Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 12,328 Best Price : $0.18 Price Each : $0.18
Part : TN3019A Supplier : ON Semiconductor Manufacturer : Chip1Stop Stock : 4,766 Best Price : $0.1114 Price Each : $0.1114
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TN3019A Datasheet

Part Manufacturer Description PDF Type
TN3019A Fairchild Semiconductor NPN General Purpose Amplifier Original
TN3019A Fairchild Semiconductor NPN General Purpose Amplifier Original
TN3019A National Semiconductor NPN Medium Power Transistors Scan
TN3019A National Semiconductor NPN General Purpose Amplifier Scan
TN3019A_J05Z Fairchild Semiconductor TRANS GP BJT NPN 80V 1A 3TO-226 BULK Original
TN3019A_NL Fairchild Semiconductor NPN General Purpose Amplifier Original

TN3019A

Catalog Datasheet MFG & Type PDF Document Tags

1N4548

Abstract: 1N4008 2N1474A 2N1475 2N1491 2N1492 2N1505 2N1506 TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A PN2369A PN2369A PN2369A PN2369A PN2369A PN2369A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A TN3019A PN2907 PN2222 PN2222 PN2222 PN2222 PN2222 PN2907A PN2907A , TN2219A TN3019A TN3019A TN2219A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN2219A TN3019A PN2907 TN2219A TN2219A TN2219A TN2219A PN2369A TN2219A TN2219A TN2219A TN2219A TN2219A
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Original
1N1744A 1N4548 1N4008 Diode 1N4008 1N4008 diode 1n4148 1N100 1N100A 1N101 1N102 1N103 1N104

transistor 2N3563

Abstract: 2SK30 2N834A 2N847 2N858 2N859 2N860 2N861 2N862 Recommended Fairchild Device TN3019A TN2219A TN2219A TN3019A TN3019A PN2369A PN2369A PN2369A PN2907 PN2907 PN2222A PN2484 PN2484 PN2484 PN2484 PN2484 PN2484 , Recommended Fairchild Device PN2369A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A PN2369A PN2369A PN2369A PN2369A PN2369A PN2369A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A TN3019A , TN2907A TN2907A TN2219A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN2219A TN3019A TN3019A
Fairchild Semiconductor
Original
transistor 2N3563 2SK30 2n3819 cross reference 2SA726 2sk41e transistor 2sc1417 2N669B 2N696 2N697 2N699 2N699A 2N706

TN3019A

Abstract: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general , Thermal Resistance, Junction to Ambient Max Units TN3019A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN3019A N Discrete POWER & Signal Technologies (continued) Electrical , pF pF 400 400 pS 4.0 dB TN3019A NPN General Purpose Amplifier (continued , 60 40 Ceb 20 0 0.1 C cb 1 10 REVERSE BIAS VOLTAGE (V) P 12 50 TN3019A NPN
National Semiconductor
Original
Abstract: H E M iQ Q N P U S T O R TN3019A TO-226 NPN General Purpose Amplifier This device is , TA = 25°C unless otherwise noted Characteristic Max Units TN3019A Rejc Total , Semiconductor Corporation w TN3019A Discrete POWER & Signal Technologies (continued) Electrical , 60 PF 400 400 pS 4.0 dB TN3019A NPN General Purpose Amplifier TN3019A TN3019A (continued) Test Circuit - 4 .0 V 50 V To Sampling Scope Rise Time < 5.0 ns Input Z -
OCR Scan

TN3019A

Abstract: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general , TN3019A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN3019A Discrete POWER & Signal Technologies , Cycle 1.0% MHz 12 60 80 pF pF 400 400 pS 4.0 dB TN3019A NPN General , ) 125 80 60 40 Ceb 20 0 0.1 C cb 1 10 REVERSE BIAS VOLTAGE (V) P 12 50 TN3019A , TEMPERATURE (o C) 125 150 TN3019A NPN General Purpose Amplifier (continued) Test Circuit -
Fairchild Semiconductor
Original

SSP35n03

Abstract: bc417 2KBP06M 2KBP08M 2KBP10M TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A PN2369A PN2369A PN2369A PN2369A PN2369A PN2369A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A TN3019A TN2907A PN2222 PN2222 PN2222 PN2222 PN2222 TN2907A TN2907A TN2907A TN2907A TN2907A , Fairchild Closest Equivalent TN2907A TN2219A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN2219A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN2219A TN3019A TN2907A
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Original
SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA
Abstract: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed , Semiconductor Corporation Max Units TN3019A 1.0 8.0 125 W mW/°C °C/W 50 °C/W , , Duty Cycle ≤ 1.0% MHz 12 80 pF 60 pF 400 400 pS 4.0 dB TN3019A NPN , BIAS VOLTAGE (V) 50 TN3019A NPN General Purpose Amplifier (continued) Typical , 75 100 TEMPERATURE (o C) 125 150 TN3019A NPN General Purpose Amplifier (continued Fairchild Semiconductor
Original

CEB120

Abstract: TN3019A TN3019A C B TO-226 E NPN General Purpose Amplifier This device is designed , Max TN3019A 1.0 8.0 125 50 Units W mW/°C °C/W °C/W ã 1997 Fairchild Semiconductor Corporation 3-58 TN3019A NPN General Purpose Amplifier Electrical Characteristics Symbol Parameter TA = 25 , *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0% 3-59 TN3019A NPN General Purpose Amplifier , TN3019A NPN General Purpose Amplifier Typical Characteristics (continued) (continued) Small
Fairchild Semiconductor
Original
CEB120

si167

Abstract: TN3019A i= > E \I P 3 G H l I- O Discrete POWER & Signal Technologies ggM C O N O U C TO R TN3019A NPN General Purpose Amplifier This device is designed for general purpose medium , Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TN3019A 1.0 8.0 125 50 Units w m W /°C °C/W °C/W < s) 1997 Fairchild S em ico nd ucto r C orporation TN3019A NPN , dB * P u ls e T e st: P ulse W idth
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OCR Scan
si167

bc337 cross-reference

Abstract: bc337-16 BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings , New products collector currents to 500 mA. Sourced from Product selection and Process 12. See TN3019A , and Process 12. See TN3019A for characteristics. parametric search Cross-reference back to top search
Fairchild Semiconductor
Original
bc337 cross-reference bc337 fairchild BC-337-16 bc33716 BC33725 BC33716 cross BC33716 BC337 BC33716TA BC33716BU

transistor TD-100 le

Abstract: pn222 TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed , Corporation Max Units TN3019A 1.0 8.0 125 W mW/°C °C/W 50 °C/W (continued , 1.0% MHz 12 80 pF 60 pF 400 400 pS 4.0 dB TN3019A NPN General , - AMBIENT TEMPERATURE (° C) 125 0 0.1 1 10 REVERSE BIAS VOLTAGE (V) 50 TN3019A , TN3019A NPN General Purpose Amplifier (continued) Test Circuit 50 V - 4.0 V IC Rb
Fairchild Semiconductor
Original
transistor TD-100 le pn222 ad label information on the box CBVK741B019 F63TNR PN2222N

bd113

Abstract: common collector amplifier circuit designing tà Discrete POWER & Signal National â'ž â  , . Technologies Semiconductor'" TN3019A NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings* ta = 25*C unless otherwise noted Symbol Parameter Value Units VcEO , TN3019A Po Total Device Dissipation 1.0 w Derate above 25 C 8.0 mW/°C R»jc Thermal Resistance
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OCR Scan
bd113 common collector amplifier circuit designing 25CC npn 4111 LS01130 00MQL37
Abstract: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 Fairchild Semiconductor
Original

1285_TN3019A

Abstract: F = A in C H I L .D S Ê M (C O N D U C T O R im 1285_TN3019A (WAFER SALES) NPN GENERAL PURPOSE AMPLIFIER B vceo . . . . 80 V (Mfn) @ Ic = 10 mA H f e . 100 (Min) - 300 (Max) @ Ic = 150 mA, VCE = 10 V 30.0 mils (762.0 urn) 30.0 mils (762.0 urn) ABSOLUTE MAXIMUM RATINGS (0 P rocess 1 2 TEMPERATURES Operating Junction Temperature VOLTAGES & CURRENTS V c e o Collector-Emitter Voltage V c b o Collector-Base Voltage Vebo Emitter-Base Voltage Ic Collector Current (Continuous) -55
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OCR Scan
1285_TN3019A

C 337-25

Abstract: C 33725 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC
Fairchild Semiconductor
Original
C 337-25 C 33725 NPN general purpose transistor BC337 BC337 NPN transistor datasheet transistor BC337 transistor bc337 npn

mpsa06 539

Abstract: Test Conditions Process No. TO-92 (92) 150 150 1.0 500 12 12 (5-39) 120 I TN3019A
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OCR Scan
mpsa06 539 PN3568 MPS80S MPSA05 MPSA06 TN5320A TN3440A

PN3568

Abstract: MPS805 NPN Transistors Discrete POWER & Signal MLà National Technologies Semiconductor1" ^ ^¡^ powe|p Device No. Case Style V cbo (V) Min V ceo (V) Min V ebo (V) Min 'cbo y (nA)@ " Max hfe @ 'c & vce Min Max (mA) (V) V V yce(sat) be(sat) i (V) & (V) 0 c Max Min Max c* (PF) Max *t , (MHz) @ C Min Max '(ol) (us) Max Test Conditions Process No. PN3568 TO-92 (92) 80 60 5 50 40 40 30 1 40 120 150 1 0.25 150 20 60 600 50 12 TN3019A TO-226 (99) 140 80 7 10 90 50 1 10 90 10 10 100
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OCR Scan
MPS805 TN6714A TN6705A TN6715A TN67 TO-226
Abstract: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 Fairchild Semiconductor
Original

PNP 3-224

Abstract: NPN Transistor PN100A . 3-52 TN3019A NPN GPA
Fairchild Semiconductor
Original
PNP 3-224 NPN Transistor PN100A 2n3904 TRANSISTOR PNP 2N3906 Darlington transistor PNP 2N3904 PNP switching transistor 2N3906 PN100 PN100A MMBT100 MMBT100A PN200 PN200A

C 337-25

Abstract: BC337-16 BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0
Fairchild Semiconductor
Original
transistor BC337-16
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