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TN2524N8 Datasheet

Part Manufacturer Description PDF Type
TN2524N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original
TN2524N8 Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original
TN2524N8-G Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original

TN2524N8

Catalog Datasheet MFG & Type PDF Document Tags

mosfet discrete totem pole drive CIRCUIT

Abstract: analog switch circuit using mosfet be driven from +100V TN2524N8 3.3V to 5.0V Logic 8 2 7 Figure 7 + A B CLK , VOUTB GND ­ 6 TN2524N8 ­100V HT04 3-80 HT04 Series Applications HIGH VOLTAGE , CLK 4 TN2524N8 VOUTA ­ + VPP 3 5 TN2524N8 VOUTB ­ GND 6 HV2216 , ISOLATION BARRIER 1 B CLK 4 TN2524N8 VOUTA ­ + 3 VNN 5 TN2524N8 VOUTB , CISS). TN2524N8 TN2540N8 LND150N8 1 A 8 B 2 CLK 7 GND Figure 9 4 + VOUTA 3 ­
Supertex
Original
HT0440 mosfet discrete totem pole drive CIRCUIT analog switch circuit using mosfet 1mhz ultrasound transducer circuit driver mosfet discrete totem pole CIRCUIT solid state switch ic 120v HT04 AN-D26

HT04

Abstract: mosfet discrete totem pole CIRCUIT in backlight systems in a portable application. +100V TN2524N8 1 3.3V to 5.0V Logic 8 2 7 A HIGH , GND TN2524N8 Figure 7 HT04 3-101 HT04 Series Applications HIGH VOLTAGE SELECTOR , Logic 8 2 7 A HIGH VOLTAGE ISOLATION BARRIER + VOUTA ­ + VOUTB ­ 4 3 5 6 +40V ­10V TN2524N8 VPP B CLK TN2524N8 GND HV2216 Analog Switch IC TN2524N8 VNN 1 3.3V to 5.0V Logic 8 2 7 A HIGH VOLTAGE ISOLATION BARRIER + VOUTA ­ + VOUTB ­ 4 3 5 6 ­120V B CLK TN2524N8
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Original
ultrasound transducer circuit driver 1mhz 5v opto isolated 2 channel relay board

ultrasound transducer circuit driver 1mhz

Abstract: HT04 backlight systems in a portable application. +100V TN2524N8 3.3V to 5.0V Logic 8 2 7 Figure , 5 ­ EL Panel 100nF VOUTB GND 6 ­ TN2524N8 ­100V HT04 4 HT04 Series , BARRIER 1 B CLK 4 TN2524N8 VOUTA ­ + VPP 3 5 TN2524N8 VOUTB ­ GND 6 , VOLTAGE ISOLATION BARRIER 1 B CLK 4 TN2524N8 VOUTA ­ + 3 VNN 5 TN2524N8
Supertex
Original
VN3205N8 analog switch circuit using mosfet to control N-Channel Depletion-Mode MOSFET high voltage analog switch using mosfet P-Channel Depletion-Mode

TN0604N3

Abstract: HV5808 - TN2510N8 or TN0610N3 obs TN0620 N2 - TN0620N3 or TN2524N8 obs TN0620 N5 - TN2524N8 or TN0620N3 obs TN0624 N2 - TN2524N8 obs TN0624 N3 TN0620N3 TN2524N8 obs - 2N6661 2 EACH: TN0604N3 and TP0604N3 obs TN0104N3 obs , same pkg alt is not close) Drop-In Alt Status TN0624 N5 - TN2524N8 obs TN0635 , VN2224N3 obs VN2406 B - TN2524N8 or VN2406L obs VN2406 D - TN2524N8 or
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Original
VP2206N2 VP0109N3 VP2210 VQ1000 VN3205N6 HV5808 TP0606N3 HV5708 HV50530 2N6659 VN2210N2 2N7007 TN5325N3 AN0332 AP0332

P-Channel Depletion Mosfets

Abstract: analog switch circuit using mosfet to control backlight systems in a portable application. +100V TN2524N8 3.3V to 5.0V Logic 8 2 7 Figure , 5 ­ EL Panel 100nF VOUTB GND 6 ­ TN2524N8 ­100V HT04 4 HT04 Series , BARRIER 1 B CLK 4 TN2524N8 VOUTA ­ + VPP 3 5 TN2524N8 VOUTB ­ GND 6 , VOLTAGE ISOLATION BARRIER 1 B CLK 4 TN2524N8 VOUTA ­ + 3 VNN 5 TN2524N8
Supertex
Original
P-Channel Depletion Mosfets fast high side mosfet driver mosfet driver to drive 50V VDD h-bridge mosfet

P-Channel Depletion Mosfets

Abstract: ultrasound transducer circuit driver 1mhz from +100V TN2524N8 3.3V to 5.0V Logic 8 2 7 Figure 7 A + B CLK HIGH , Panel 100nF 6 TN2524N8 ­100V HT04 3-101 3 HT04 Series Applications HIGH VOLTAGE , TN2524N8 VOUTA ­ + VPP 3 5 TN2524N8 VOUTB ­ GND 6 HV2216 Analog Switch IC , 4 TN2524N8 VOUTA ­ + 3 VNN 5 TN2524N8 VOUTB GND ­ 6 ­120V HT04 , using TN2524N8 TN2540N8 3.3V to 5.0V Logic 1 A 8 B 2 CLK 7 GND Figure 9 HIGH
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Original
ultrasound transducer circuit driver ultrasound transducer transformer p channel depletion mosfet p channel mosfet 100v ultrasound transducer high power driver mosfet power totem pole CIRCUIT

P-Channel Depletion Mosfets

Abstract: mosfet discrete totem pole drive CIRCUIT + A B CLK HIGH VOLTAGE ISOLATION BARRIER 1 VOUTA + TN2524N8 +100V 4 3 -100V 5 EL Panel 100nF TN2524N8 VOUTB GND - HT0440 High Voltage Selector Switch , 1 VOUTA 4 - 3 + 5 - GND 8 2 7 B CLK TN2524N8 6 +40V -10V , TN2524N8 4 HV20220 Analog Switch IC TN2524N8 VOUTA + 3 VNN 5 TN2524N8 VOUTB
Supertex
Original
relay driver circuit using microprocessor ultrasound transducer circuit driver HV20220 mosfet application solenoid driver Mosfet analog switch low voltage low resistance 700V mos logic level n channel MOSFET

mosfet cross reference

Abstract: pj 929 diode MOSFETs: TN2524N8 and TP2522N8. 3. Consult factory for availability. 6-11 Page No. 11-1 Built , VN0660N3 TN2106K1 VN2110K1 IRFS1Z0 IRFS1Z3 MFE350 MFE500 MFE910 TN2524N8 TN0104N8 VN0535N2 , VN2110K1 MPF960 MPF990 MTP2P50 MXF350 MXF500 TN0606N3 TN0610N3 VP0350N5 TN2524N8 TN2524N8 , BUK451-100B D80AK2 D80AL2 TN2524N8 TN2524N8 TN0610N5 TN0606N3 TN0610N3 MXF930 MXF960 MXF990 ND2012E ND2012L TN0104N8 TN0104N8 TN2524N8 DN2535N3 DN2530N3 SD1106DD SD1107BD SD1107CHP
Supertex
Original
mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode T0-92 TN2101 TN2501 TN0602 TN0702 TN0102

IRF-520 Mosfet

Abstract: VN2224 to-220 is 100mA, TN2524N8 will typically need V GS = 1.75V and VN2224N3 will require 2.4 volts to achieve , VN2224, the TN2524N8 performance is far superior at low gate to source voltages. Supertex measures , the given minimum gate-to-source voltage. 150 TN2524N8 100 Comparison of Approach 1 and 2 50
Supertex
Original
IRF-520 Mosfet VN2224 to-220 definition of photovoltaic effect IRF P CHANNEL MOSFET TO-220 IRF P CHANNEL MOSFET TN2124K1

ICM7555

Abstract: IRF520 . For example, if the drain current requirement is 100mA, TN2524N8 will typically need VGS = 1.75V and , 3.6 times smaller than the VN2224, the TN2524N8 performance is far superior at low gate to source , than a higher threshold device. 150 TN2524N8 100 50 VN2224N3 0 0 0.5 1.0 1.5 2.0
Supertex
Original
ICM7555 IRF520 VN2210N3 TN2524N AN-D02 12VDC

power supply 220v 12v diagram

Abstract: zero voltage switching adjustable ramp two Supertex MOSFETs: one N-Channel MOSFET, the TN2524N8 and one P-Channel MOSFET, the TP2522N8. The , VNN2 VPP2 Vpsen 1.0 0.1µF TN2524N8 0.1µF 25V TP2522N8 1.0 VNN1 = -160V
Supertex
Original
HV441 HV441PJ BAS21 power supply 220v 12v diagram zero voltage switching adjustable ramp regulator input 220V AC output 3,3V DC high power pulse generator with mosfet 220V ac to 12V dc circuit diagram OPamp 60V 100KH 400KH

VP1304N2

Abstract: LND150N8 fflpSupertex inc. Device 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 DN2540ND HT0440LG HT0440N4 LND150N3 LND150N8 LND150ND LP0701LG LP0701N3 LP0701ND TC0604WG TD9944TG TN0102N2 TN0102N3 TN0102ND TN0104N2 TN0104N3 TN0104N8 TN0104ND TN0604WG TN2101K1 Page # 20 24 28 28 28 28 28 28 28 28 28 30 30 34 34 34 38 38 38 42 43 47 47 47 47 47 47 47 51 55 Device TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND TN2502ND TN2504N8 TN2504ND TN2506ND TN2510N8 TN2510ND TN2520ND TN2524N8
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OCR Scan
TP2540ND VN1304N3 VN1310N3 VN3205N5 VP1304N2 VP1306N2 VP3203N3 TN2524ND TN2535ND TN2540ND TP0102N2 TP0102N3 TP0102ND

pwm using XR-2206

Abstract: XR-2206 Supertex MOSFETs, TP2522N8 and TN2524N8 for loads of up to 20 RENs. Complete schematics for a 5 REN and a , , on the HV440 is designed to drive external Supertex MOSFETs TP2522N8 and TN2524N8 for load , TN2524N8 are used for Q1 and Q2 to accommodate for the higher REN load requirement. The internal , TN2524N8 Q1 TP2522N8 C7 0.1µF C8 C13 0.1µF 680pF 10 VNsen VNgate HVOUT VPgate , N-channel MOSFET TN2524N8 - 240V U1 Quad operational amplifier IC LM2902M - -
Supertex
Original
pwm using XR-2206 XR-2206 XR-2206 DATASHEET XR-2206 CIRCUIT IC XR2206 pin diagram of XR 2206 AN-H37 62VRMS 40VRMS BAV99 LM2903M HV440WG

charge pump relay drive circuit

Abstract: IRF P CHANNEL MOSFET . For example, if the drain current requirement is 100mA, TN2524N8 will typically need V GS = 1.75V and , TN2524N3 die being 3.6 times smaller than the VN2224, the TN2524N8 performance is far superior at low gate , TN2524N8 100 Comparison of Approach 1 and 2 50 1. Large die always have larger parasitic
Supertex
Original
charge pump relay drive circuit pioneer mosfet
Abstract: TN2524N8 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)240 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)200m @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case15 Thermal Resistance Junc-Amb.78 V(GS)th Max. (V)2.0 V(GS)th (V) (Min).60 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)1.0m I American Microsemiconductor
Original

pulse wave signal generator

Abstract: 220v to 12v power supply switching circuit MOSFETs: one N-Channel MOSFET, the TN2524N8 and one P-Channel MOSFET, the TP2522N8. The high voltage , VPP2 Vpsen 1.0 0.1µF TN2524N8 TP2522N8 0.1µF 25V 1.0 VNN1 = -160V BAS21
Supertex
Original
pulse wave signal generator 220v to 12v power supply switching circuit linear regulator for 240v ac to 3.3v voltage osc 11-18 sine wave generator using opamp 220V Driver

pwm using XR-2206

Abstract: XR2206 than 5 RENs, the HV440 can also drive external Supertex MOSFETs, TP2522N8 and TN2524N8 for loads of up , Supertex MOSFETs TP2522N8 and TN2524N8 for load requirements of up to 20 RENs. When using external MOSFETs , TN2524N8 are used for Q1 and Q2 to accommodate for the higher REN load requirement. The internal , TN2524N8 Q1 TP2522N8 C7 0.1µF C8 C13 0.1µF 680pF 10 VNsen VNgate HVOUT VPgate , N-channel MOSFET TN2524N8 - 240V U1 Quad operational amplifier IC LM2902M - -
Supertex
Original
XR2206 capacitor 4.7uf 250v polyester amplitude controlled Wien Bridge Oscillator xr2206 truth table sine wave generator circuit using xr2206 Wien Bridge Oscillator

sine wave generator using opamp

Abstract: regulator input 220V AC output 3,3V DC N-Channel MOSFET, the TN2524N8 and one P-Channel MOSFET, the TP2522N8. The high voltage outputs have pulse , VNN2 VPP2 Vpsen 1.0 0.1µF TN2524N8 0.1µF 25V TP2522N8 1.0 VNN1 = -160V
Supertex
Original
Reference sine wave OP-AMP OSCILLATOR CIRCUIT linear a

DN2540N5

Abstract: HT0440LG TN2425N8-G TN2435N8-G TN2501N8-G TN2504N8-G TN2510N8-G TN2524N8-G TN2535N8-G TN2540N3-G TN2540N8-G , TN2130K1 TN2425N8 TN2435N8 TN2501N8 TN2504N8 TN2510N8 TN2524N8 TN2535N8 TN2540N3 TN2540N8
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Original
DN2530N3-G DN3135K1-G HT0440LG-G TP0610T VN10KN3 VN3205N8-G hv5308pj-b LR8N3-G TN2130K1-G LR8N3 2N7000 2N7008 DN2470K4 DN2530N8 DN3135K1 DN3135N8

zero voltage switching adjustable ramp

Abstract: OPamp 60V addition of two Supertex MOSFETs: one N-Channel MOSFET, the TN2524N8 and one P-Channel MOSFET, the TP2522N8 , +60V 1.0 Vpsen Vpgate VPP2 HVOUT VDD2 Linear Reg PGND VNN2 Vngate TN2524N8 0.1µF Vnsen 1.0 VNN1 = -160V
Supertex
Original

schematic diagram pv pwm Charge controller

Abstract: transformer bobbin TN2524N8 R7 2.4 Figure 1 09/16/02 Supertex Inc. does not recommend the use of its products in life , of Q1, the TN2524N8. This Supertex MOSFET is a low threshold, 240V, 6 device designed to work in , resistive loss, I2RDS(ON), which is called the conduction loss. The TN2524N8 is available in a small SOT
Supertex
Original
HV9605C LLSD101 HV9605CNG schematic diagram pv pwm Charge controller transformer bobbin LL4148 AN-H41 HV9120C

pwm using XR-2206

Abstract: XR-2206 IC TN2524N8 for loads of up to 20 RENs. Complete schematics for a 5 REN and a 20 REN ring generator with , drive external Supertex MOSFETs TP2522N8 and TN2524N8 for load requirements of up to 20 RENs. When , TN2524N8 are used for Q1 and Q2 to accommodate for the higher REN load requirement. The internal , 12 VNN2 Q2 TN2524N8 Q1 TP2522N8 C7 0.1µF C8 C13 0.1µF 680pF 10 VNsen
Supertex
Original
XR-2206 IC 10mH inductor electrolytic capacitor 470uf xr2206 application Philips Electrolytic Capacitor 22uf 250v 110v to 5v dc schematic TP2522N8-G HV440WG-G

negative floating regulator

Abstract: sine wave generator using opamp two Supertex MOSFETs: one N-Channel MOSFET, the TN2524N8 and one P-Channel MOSFET, the TP2522N8. The , VNN2 VPP2 Vpsen 1.0 0.1µF TN2524N8 0.1µF 25V TP2522N8 1.0 VNN1 = -160V
Supertex
Original
negative floating regulator MS-018 DSPD-44PLCCPJ B041807

smps transformer pc

Abstract: 5v pc smps pwm design TN2524N8 R7 2.4 Figure 1 03/13/00 Supertex Inc. does not recommend the use of its products in life , of Q1, the TN2524N8. This Supertex MOSFET is a low threshold, 240V, 6 device designed to work in , resistive loss, I2RDS(ON), which is called the conduction loss. The TN2524N8 is available in a small SOT
Supertex
Original
HV9120 smps transformer pc 5v pc smps pwm design schematic pc smps HV9120-Controlled smps transformer design HV9110

capacitor 10nf

Abstract: ring generator ic 12 VNN2 Q2 TN2524N8 Q1 TP2522N8 C7 0.1 F C8 C13 0.1 F 680pF 10 VNsen , P-channel MOSFET TP2522N8 - 220V, 0.75A Q2 N-channel MOSFET TN2524N8 - 240V, 1.0A
Supertex
Original
HV440DB2 capacitor 10nf ring generator ic schematic diagram 50v generator 250v 1.0 K capacitor ringer ic HV440DB1
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