TMM2018AP-25 Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
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1 - 3 of about 3 for TMM2018AP-25 |
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First line: mmvm TMM2018AP-25, TMM2018AP-35, TMM2018AP-45 [description! TMM2018AP 16,384 bits high speed power static random access memory organized 2,048 words bits operates from single supply. Toshiba's high performance device technology provides both high speed power features with maximum access time 25ns/35 Abstract: .. mmvm TMM2018AP-25, TMM2018AP-35 TMM2018AP-35 , TMM2018AP-45 TMM2018AP-45 [description! The TMM2018AP TMM2018AP is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates .. Tags: datasheet abstract.. |
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First line: TMM2018AP-35 TOSHIBA TMM2018AP-25. TMM2018AP-35, TMM2018AP-45 iDESCRIPTIONl TMM2018AP 16,384 bits high speed power static random access memory organized 2,048 words bits operates from single supply. Toshiba's high performance device technology provides both high speed power features with maximum acc Abstract: .. TOSHIBA MOS TMM2018AP-25. TMM2018AP-35 TMM2018AP-35 , TMM2018AP-45 TMM2018AP-45 iDESCRIPTIONl The TMM2018AP TMM2018AP is a 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and .. Tags: TMM2018AP-35 datasheet abstract.. |
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First line: CMOS Static (2048x8) 24PIN 6117 [*typ] TAAC (ns) TCAC (ns) (ns) (ns) (ns) (ns) (ns) (ns) (ns) STANDBY SB/1 SB2) (pF) VOL/ (V/mA) V0H/ (V/mA) (pF) MB8417-20 FUJITSU 5-5. 4/4.0 4/1.0 MB8417-20L FUJITSU -40-85 5-5. 4/4. 4/1.0 MB8417A-12 FUJITSU 0.4/4 2.4/1 MB8417A-12L FUJITSU 4/4. 4/1.0 MB8417A-15 FUJI Abstract: .. 5 30 3/0.001 0.8 2.2 10 0.4/2 2.4/1 10 TMM2018AP-25 TOSHIBA 0—70 25 25 15 5 20 12 0 0 0 4. 5—5. 5 150 20/40 0.8 2.0 5 0.4/8 2. 4/4. 0 10 THIM2018AP-35 THIM2018AP-35 TOSHIBA 0-70 35 35 20 5 30 15 0 0 0 4. 5—5. 5 135 20/40 .. Tags: datasheet abstract.. |
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| Specsheet Results |
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TMM2018AP25 |
Toshiba |
General-Purpose Static RAM - Asych., TTL compatible I/O |
Specification |
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