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TLN110 Datasheet

Part Manufacturer Description PDF Type
TLN110 Toshiba Optical Semiconductor Devices Original
TLN110 Toshiba Japanese - Optical Semiconductor Devices Original
TLN110 N/A The Optical Devices Data Book (Japanese) Scan
TLN110 N/A Infrared Lamp Scan
TLN110 Toshiba Infrared Lamp Scan
TLN110F Toshiba Infrared LED, GaAs Infrared Emitter Original

TLN110

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TOSHIBA TOSHIBA INFRARED LED TLN110 Ti m 'm n GaAs INFRARED EMITTER 11 n m m INFRARED LED FOR REMOTE CONTROL SYSTEM Unit in mm REMOTE CONTROL SYSTEM SMOKE SENSOR OPTO-ELECTRONIC SWITCH · High radiant intensity ; Ig - 30mW / sr (TYP.) · Excellent linearity of radiant intensity and , Handbook. 1997 09-08 - 1/5 TOSHIBA TLN110 PRECAUTION Please be careful of the followings , ) iD \o i 0 1 o TLN110 00 OJ TOSHIBA TLN110 WAVELENGTH CHARACTERISTIC -
OCR Scan
TPS703 961001EAC2
Abstract: TLN110(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead Free Product , TLN110(F) Precautions Please be careful of the followings. 1. Soldering temperature : 260°C max , ) 2 2004-02-06 TLN110(F) IF ­ Ta 120 1000 IFP ­ VFP (typ.) 100 500 300 , 2004-02-06 TLN110(F) Wavelength Characteristic 1.0 IF = 50mA Ta = 25°C 0.8 (typ.) 10 Relative , 2004-02-06 TLN110(F) Distance Characteristics (long distance) 1000 100 IEP = 200mW / sr at IFP Toshiba
Original
Abstract: .1 Switching time test circuit Input pulse Input TLN110(F) VCC TPS611(F) Output R RL Output pulse 0 tr tf 10 , °C Light source = TLN110(F) Directional Sensitivity Characteristics (typ.) (dB) 30° 40° 50° 60° 70° 80 , (typ.) Ta = 25°C Input TLN110(F) VCC 10V R 200 tr (RL=10k) 100 50 30 tf (RL=10k) Output RL 50 Output pulse Input pulse td tr tf 30 Coupling Characteristics With TLN110(F) Switching time (µs) (mA) 10 90% 10% Collector current IC TLN110(F) IE = 50mW / sr 5 3 10 Ta = 25°C TPS611(F) Using Toshiba
Original
2870K

TOSHIBA PHOTOTRANSISTOR SILICON NPN

Abstract: Input TLN110(F) R VCC TPS610(F) Output RL Output pulse 0 tr tf 10% Input pulse 0 90% PC ­ Ta 160 10 , °C) 12 8 4 0 -4 -8 -12 Frequency Characteristics (typ.) VCC = 5 V Ta = 25°C Light source = TLN110(F , (typ.) 30 Ta=25°C Input TLN110(F) VCC 10V Output RL tr tf Output pulse Input pulse td 90% 10% Coupling Characteristics With TLN110(F) TLN110(F) IE = 50mW/sr (mA) Collector current IC Switching , 150A at VCE = 3V E = 0.1mW/cm2 0.5 0.3 TLN110(F) d 30 tf (RL=10k) tr (RL=1k) 10 td (RL=10k) 3
Toshiba
Original
TOSHIBA PHOTOTRANSISTOR SILICON NPN

TLN110

Abstract: 46C4 TLN110(F) GaAs LED TLN110(F) : mm · : IE=30mW / sr() · · PIN , 1 2007-10-01 TLN110(F) · 260°C5s() · · LED 1 : 1 I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN110(F) IF ­ Ta IFP ­ VFP () 1000 100 , ) 2007-10-01 TLN110(F) () 1.0 IE ­ Ta () 10 IF = 50mA Ta = 25°C 5 0.8 , 100 300500 1m 3 5 10m PW (s) 4 2007-10-01 TLN110(F) () 100
Toshiba
Original
46C4

TLN110

Abstract: c4060 260°C5s 1 2007-10-01 TPS610(F) 1. VCC TLN110(F) 0 TPS610(F) R , ) 2007-10-01 TPS610(F) () () 12 VCC = 5V Ta = 25°C 8 Ta = 25°C = TLN110(F , ) TLN110(F) () 100 30 Ta = 25°C RL td tr 10 tf 200 50 30 3 tf , ) TLN110(F) TLN110(F) IE = 50mW / sr VCC 10V 10 Ta = 25°C 1 TPS610(F) :IL = 150A at VCE = 3V E = 0.1mW / cm2 0.5 3V IC 0.3 TLN110(F) 0.3 1 IC 3 10
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Original
c4060
Abstract: TLN110(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead(Pb)-Free Remote-control , 20 940 45 ±8 Max 1.5 10 Unit V A mW / sr mW pF nm nm ° 1 2 1 2007-10-01 TLN110(F , fluctuation in optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN110(F , Forward current IF (mA) Forward current IF (mA) 3 2007-10-01 TLN110(F) Wavelength , 300 1m 3m 10m Pulse width PW (s) 4 2007-10-01 TLN110(F) Distance Toshiba
Original

"Smoke Sensor"

Abstract: TLN110 TOSHIBA TLN110 TOSHIBA INFRARED LED GaAs INFRARED EMITTER TLN110 INFRARED LED FOR REMOTE , TLN110 PRECAUTION Please be careful of the followings. 1. Soldering temperature : 260°C MAX , without notice. 1997-09-08 2/5 TOSHIBA TLN110 IF - Ta ifp - VFP (TYP.) 20 40 60 80 100 120 AMBIENT , °C 3 10 30 100 300 FORWARD CURRENT IF (mA) 1000 1997-09-08 3/5 TOSHIBA TLN110 880 WAVELENGTH , (NEAR DISTANCE) = 100 - 10 -1 â'"10.1 (mm) 1997-09-08 4/5 TOSHIBA TLN110 1000c DISTANCE
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OCR Scan
100//S

TLN110

Abstract: TPS703 TOSHIBA TLN110 TOSHIBA INFRARED LED GaAs INFRARED EMITTER TLN110 INFRARED LED FOR , mA â'" 45 â'" nm Half Value Angle 0* Ip = 50 mA â'" ±8 â'" o 1 2002-03-20 TOSHIBA TLN110 , TLN110 IF - Ta ifp - VFP 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (°C) 140 IF - vf (typ.) Ta , °C 3 10 30 100 300 FORWARD CURRENT IF (mA) 1000 3 2002-03-20 TOSHIBA TLN110 WAVELENGTH , (mm) 4 2002-03-20 TOSHIBA TLN110 5 2002-03-20 TOSHIBA TLN110 RESTRICTIONS ON PRODUCT USE â
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OCR Scan

TLN110

Abstract: TPS611 TLN110(F) 0 TPS611(F) 90% Output R RL Output pulse 10% 0 tr PC ­ Ta (typ , 5V Ta = 25°C Light source = TLN110(F) 1 3 Frequency Relative sensitivity Output , 10V Input TLN110(F) (µs) 1000 50 Ta = 25°C tf 200 Collector current Switching time 300 Coupling Characteristics With TLN110(F) Switching Characteristics (typ.) tr (RL=10k) 100 50 50 100 30 10 5 tf (RL=10k) 30 tr (RL=1k) TLN110(F) IE = 50mW
Toshiba
Original
Abstract: .1 Switching time test circuit Input TLN110(F) R VCC TPS610(F) Output RL Output pulse 0 tr tf 10% Input pulse , = 25°C Light source = TLN110(F) 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0.8 0.6 0.4 10° 0 , Characteristics (typ.) 30 Ta=25°C Input TLN110(F) VCC 10V Output RL tr tf Output pulse 90% 10% Coupling Characteristics With TLN110(F) (µs) R td (mA) Input pulse TLN110(F) IE = 50mW/sr 10 Collector , =100,1k) tf (RL=100) tr (RL=100) 1 0.1 0.3 0.02 5 tf (RL=1k) 0.5 0.3 TLN110(F) d IC 3V TPS610 Toshiba
Original

TLN110

Abstract: TPS703 TLN110(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Remote-control Systems , ° Half value angle 1 2007-10-01 TLN110(F) Precautions Please be careful of the , optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN110(F) IF ­ Ta , Forward current IF (mA) 3 2007-10-01 TLN110(F) Wavelength Characteristic 1.0 (typ , 1m 3m 10m (s) 4 2007-10-01 TLN110(F) Distance Characteristics (long distance
Toshiba
Original

TLN110

Abstract: TPS610 2004-02-09 TPS610(F) Fig.1 Switching time test circuit VCC Input TLN110(F) Input pulse 0 , Radiation Angle (dB) Light source = TLN110(F) 30° 30° 40° 40° 50° 50° 60° 60 , Switching Characteristics (typ.) 300 1000 f (kHz) Coupling Characteristics With TLN110(F) 30 VCC Output pulse 10V TLN110(F) 10% td Output RL tr 200 tf Collector current IC Switching time (µs) R TLN110(F) IE = 50mW/sr 90% Input pulse (mA) Ta
Toshiba
Original

TLN110

Abstract: TLN205 '¢ High sensitivity :Il = 120^A(TYP.) â'¢ Half value angle : 0* = ± 8° (TYP.) â'¢ The TLN110 in the , °C LIGHT SOURCE = TLN110 (GaAs LED , CHARACTERISTICS _(TYP.) Ta = 25°C INPUT TLN110 (i (GaAs LED) OUTPUT PULSE _ Vrr = INPUT y (D PULSE - f-o , '5- 0.030.05 0.1 0.3 0.5 1 3 5 10 COLLECTOR CURRENT Iq (mA) COUPLING CHARACTERISTICS WITH TLN110 , -i_> \â'"I- TLN110 Lì TPS611 5 10 30 50 100 DISTANCE d (mm) 200 1997-09-08 4/5
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OCR Scan
TLN205 IL-99
Abstract: .1 Switching time test circuit Input TLN110(F) R VCC TPS610(F) Output RL Output pulse 0 tr tf 10% Input pulse , V Ta = 25°C Light source = TLN110(F) 30° 40° 50° 60° 70° 80° 90° 1.0 0.8 0.6 0.4 0.2 0 30° 40 , Frequency f (kHz) Switching Characteristics (typ.) 30 Ta=25°C Input TLN110(F) VCC 10V Output RL tr tf Output pulse Input pulse td 90% 10% Coupling Characteristics With TLN110(F) TLN110(F) IE = , =10k) 5 3 10 Ta = 25°C TPS610(F) Using sample 1 :IL = 150A at VCE = 3V E = 0.1mW/cm2 0.5 0.3 TLN110(F) d Toshiba
Original

Toshiba phototransistor

Abstract: circuit Input pulse Input TLN110(F) VCC TPS611(F) Output R RL Output pulse 0 tr tf 10% 90% 0 PC ­ Ta , 2007-10-01 TPS611(F) Frequency Characteristics (typ.) 12 VCC = 5V Ta = 25°C Light source = TLN110(F , sensitivity Frequency f (kHz) Switching Characteristics (typ.) Ta = 25°C Input TLN110(F) VCC 10V R , Characteristics With TLN110(F) Switching time (µs) (mA) 10 90% 10% Collector current IC TLN110(F , =100) 1 0.03 0.05 0.1 0.3 0.5 5 TLN110(F) 1 3 5 10 0.1 1 3 TPS611(F) 10 30 50 100 200 Collector
Toshiba
Original
Toshiba phototransistor

SP900

Abstract: TOSHIBA PHOTOTRANSISTOR SILICON NPN 2007-10-01 TPS611(F) Fig.1 Switching time test circuit Input pulse Input VCC TLN110(F) 0 , 25°C Light source = TLN110(F) 8 -20 1 3 Frequency f Relative sensitivity 1000 , Input TLN110(F) 30 Collector current IC Ta = 25°C Switching time (µs) 300 Coupling Characteristics With TLN110(F) Switching Characteristics (typ.) tf 200 tr (RL=10k) 100 50 50 100 30 10 5 tf (RL=10k) 30 tr (RL=1k) 10 TLN110(F) IE = 50mW / sr 5 30 3 10
Toshiba
Original
SP900

TLN110

Abstract: TPS703 TLN110(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN110(F) Lead Free Product Unit: mm , 1 2 IF = 50mA ±8 ° Half value angle 1 2004-02-06 TLN110(F , TLN110(F) IF ­ Ta IFP ­ VFP (typ.) 1000 100 500 300 (mA) 80 100 IFP 60 , 10 30 Forward current IF 3 100 300 1000 (mA) 2004-02-06 TLN110(F , TLN110(F) Distance Characteristics (long distance) 100 1000 IEP = 200mW / sr at IFP ~300mA
Toshiba
Original
Abstract: .1 Switching time test circuit Input pulse Input TLN110(F) VCC TPS611(F) Output R RL Output pulse 0 tr tf 10 , = 5V Ta = 25°C Light source = TLN110(F) Directional Sensitivity Characteristics (typ.) (dB) 30 , ) Switching Characteristics (typ.) Ta = 25°C Input TLN110(F) VCC 10V R 200 tr (RL=10k) 100 50 30 tf (RL=10k) Output RL 50 Output pulse Input pulse td tr tf 30 Coupling Characteristics With TLN110(F) (µs) (mA) 10 90% 10% Switching time Collector current IC TLN110(F) IE = 50mW / sr 5 3 Ta Toshiba
Original

TLN110

Abstract: TLN205 High sensitivity : II = 250/^A (TYP.) Half value angle : 0*= ±8° (TYP.) The TLN110 in the same size , CHARACTERISTICS _(TYP.) Ta = 25°C INPUT , OUTPUT PULSE . _ VCC INPUT â ft'ZX 10V PULSE -\ TLN110 (GaAs LEdT , (TYP.) v CC = 5V a = 25°C IGHT SOURCE = TLN110 jaAs LED) T , FREQUENCY f (kHz) 300 1000 COUPLING CHARACTERISTICS WITH TLN110 0.5 0.3 0.1
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OCR Scan
961001EAA2 150//A
Showing first 20 results.