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TL114 Datasheet

Part Manufacturer Description PDF Type
TL1140AF070Q E-SWITCH Thru-hole tact switch with long operating life (1,000,000 cycles) and 2-lead design Original
TL1140 SERIES E-SWITCH Thru-hole tact switch with long operating life (1,000,000 cycles) and 2-lead design Original

TL114

Catalog Datasheet MFG & Type PDF Document Tags

50PQSA065

Abstract: TL114 5A Avg. 65 Volts SBD 50PQSA065 OUTLINE DRAWING(mm) Maximum Ratings Item Symbol Conditions Unit Repetitive Peak Reverse Voltage V RRM 65 V Average Rectified Forward Current IO R.M.S. Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Tl114 V RM =30V (TlLead Temperature) I F(RMS) I FSM A 2.0 A 7.85 150 A 50Hz 50Hz Half Sine Wave,1cycle
Nihon Inter Electronics
Original
TL114 VRM65V

TL114

Abstract: EC20QSA065 / Thermal Characteristics Item Peak Reverse Current Peak Forward Voltage 1.5 Tl=114
Nihon Inter Electronics
Original
EC20QSA065 EC20QSA

50PHSA12

Abstract: 2.0 Tl=114 V RM =60V (Tl:Lead Temperature) 50Hz 50Hz Half Sine Wave Resistive Load Symbol
Nihon Inter Electronics
Original
50PHSA12 VRM120V
Abstract: 2.0 IO 20NFA40 400 50Hz, Tl=114 (Tl=Lead Temperature) Half Sine Wave 1.3 Ta=25 1 Nihon Inter Electronics
Original
Abstract: 1A 400V 25ns Fast Recovery Diode Type OUTLINE DRAWING FRD Type EC10UA40 Construction (FRD) Diffusion type Silicon diode Application High frequency rectification MAXIMUM RATINGS Item Symbol Condition Approx Net Weight:0.06g Max. Rated value Unit Repetitive peak reverse voltage VRRM IO IF(RMS) IFSM Tjw Tstg 50Hz , 50Hz half sine wave 400 Tl=114 Ta=28 *1 *2 V A A A Average rectified forward current 1.0 0.8 1.51 20 -40+150 -40+150 Nihon Inter Electronics
Original
Abstract: 20NFA40 400 50Hz, Tl=114 (Tl=Lead Temperature) Half Sine Wave 1.3 Ta=25 1 Resistive Nihon Inter Electronics
Original

10ERB20

Abstract: 11DF2 20NFA60 400 600 2 2 Tl=114 Tl=104 50 50 1.28 1.58 0.01 0.02 150 150 35 35 4 4
Nihon Inter Electronics
Original
10ERB20 11DF2 10ERB10 10ERB40 10ERB60 10ERA60 11EFS2

c102 TRANSISTOR

Abstract: c103 TRANSISTOR RF_IN 2 TL114 TL111 1 2 3 TL112 1 2 TL103 R105 1.3 Ohm TL110 , , 51.98 W = 1.087, L = 3.264 W = 43, L = 129 TL114 0.070 , 51.98 W = 1.087, L = 13.259 , TL111 2 TL114 TL113 1 2 3 TL115 TL112 2 3 TL103 2 C108 4.1 pF , TL111, TL113 0.012 , 51.98 W TL112 TL114 0.028 , 51.98 W TL115 W1 = 3.048, W2 = 0.762
Infineon Technologies
Original
c102 TRANSISTOR c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR PTFA220081M PG-SON-10

TRANSISTOR C802

Abstract: TL2262 TL107 TL104 R101 1.3 Ohm TL114 2 3 2 1 2 3 1 2 3 TL111 GATE DUT , 1.270 W = 60, L = 50 W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762 TL114 W1 = 120, W2 = 30 , C104 12 pF TL113 TL118 RF_IN 2 TL114 TL104 TL117 TL111 2 1 1 3 a , 0.180 , 51.98 W = 1.087, L = 15.291 W = 43, L = 602 TL114 0.039 , 51.98 W = 1.087, L =
Infineon Technologies
Original
TRANSISTOR C802 TL2262 C102 M transistor ATC100A100JW150X atc100a smd transistor bd 37 PTFA220121M
Abstract: TL117 3 1 TL114 2 3 1 TL110 2 TL111 TL109 C103 12 pF TL108 RF_IN , 0, L = 0 W = 0, L = 0 TL114, TL 117 W1 = 1.087, W2 = 0.813, W3 = 1.087 W4 = 0.813 W1 = , TL110 TL101 TL114 3 RF_IN 2 1 2 1 2 3 3 TL108 Er=3.48 H=20 mil RO , , L = 5.080 W = 60, L = 200 TL114 0.010 λ, 24.85 W W = 3.048, L = 1.778 W = 120, L = -
Original
PTFA220041M

TL113

Abstract: w3 smd transistor 1300 Ohm R107 10 Ohm TL113 C105 68 pF TL102 TL101 TL114 TL111 TL112 TL103 , », 51.98 W W = 1.087, L = 3.264 W = 43, L = 129 TL114 0.070 λ, 51.98 W W = 1.087, L = , TL101 RF_IN C106 12 pF TL102 TL111 2 TL114 TL113 1 2 TL115 R105 10 Ohm , 1.087, W2 = 1.087, W3 = 1.016 W1 = 1.087, W2 = 1.016, W3 = 1.087, W4 = 1.016 TL112 TL114 W =
-
Original
w3 smd transistor TL217 tl201 transistor c111

capacitor marking c106

Abstract: NFM18Ps105 C105 68 pF TL102 TL101 RF_IN 2 TL114 TL111 1 2 3 TL112 1 2 , TL113 0.017 , 51.98 W = 1.087, L = 3.264 W = 43, L = 129 TL114 0.070 , 51.98 W = , TL101 RF_IN C106 12 pF TL102 TL111 2 TL114 TL113 1 2 3 TL115 TL112 2 , , 51.98 W TL112 TL114 0.028 , 51.98 W TL115 W = 1.524, L = 1.270 W = 60, L = 50 W1 =
Infineon Technologies
Original
capacitor marking c106 NFM18Ps105 NFM18PS105R0J3 Transistor tl217 c105 TRANSISTOR TRANSISTOR SMD w2

c102 TRANSISTOR

Abstract: R804 TL109 TL111 RF_IN 2 TL110 TL114 2 3 1 R102 10 Ohm TL116 2 3 1 a 2 2 , = 43, W3 = 32 TL112, TL113, TL115, TL116 W = 0, L = 0 W = 0, L = 0 TL114, TL 117 W1 , TL110 TL101 TL114 3 1 1 GATE DUT 2 3 TL108 TL109 C101 16 pF C102 22 , 5.080 W = 60, L = 200 TL114 0.010 , 24.85 W = 3.048, L = 1.778 W = 120, L = 70 TL115
Infineon Technologies
Original
R804 LM7805 M SMD TRANSISTOR c801 transistor c107 m c103 TRANSISTOR equivalent transistor c206

20NFA40

Abstract: 2A Avg. FRED 400 Volts 20NFA40 Maximum Ratings OUTLINE DRAWING(mm) Item Symbol Conditions Unit Repetitive Peak Reverse Voltage V RRM 400 V Average Rectified Forward Current IO R.M.S. Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Tl114 TlLead Temperature 50Hz 50Hz Half Sine Wave Resistive Load I F(RMS) Ta25 2.0 A 1.3 A 3.14 I
Nihon Inter Electronics
Original

TL225

Abstract: ATC100A6R2CW150X TL105 TL104 TL107 R101 1.3 Ohm 2 3 2 1 2 3 1 2 3 TL114 TL111 , , W4 = 0.762 W1 = 120, W2 = 30, W3 = 120, W4 = 30 TL114 TL115 0.016 , 51.98  W = , 3 E R101 10 Ohm TL116 TL112 C104 12 pF TL113 TL118 RF_IN 2 TL114 1 , = 43, L = 129 TL113 0.180 , 51.98  W = 1.087, L = 15.291 W = 43, L = 602 TL114
Infineon Technologies
Original
TL225 ATC100A6R2CW150X

SMD r801

Abstract: TL217 4 S4 TL113 TL102 TL117 3 1 TL114 2 3 1 TL110 2 , , W3 = 32 TL112, TL113, TL115, TL116 W = 0, L = 0 W = 0, L = 0 TL114, TL 117 W1 = , RO/RO4350B1 TL101 TL114 3 1 GATE DUT 2 TL109 C101 16 pF C104 10 pF R101 , 40, L = 60 TL113 0.027 , 41.47 W = 1.524, L = 5.080 W = 60, L = 200 TL114 0.010
Infineon Technologies
Original
SMD r801 TL218 TL2082 transistor c803 3224W-202ECT-ND c803

c102 TRANSISTOR

Abstract: PTFA220121M TL102 TL105 TL107 TL104 R101 1.3 Ohm TL114 2 3 2 1 2 3 1 2 3 , 120, W4 = 30 TL114 TL115 0.016 , 51.98 W = 1.087, L = 3.264 W = 43, L = 129 TL116 , RF_IN 2 TL114 TL104 TL117 TL111 2 1 1 3 a 2 2 0 1 2 1 TL102 2 - v4 , 15.291 W = 43, L = 602 TL114 0.039 , 51.98 W = 1.087, L = 3.302 W = 43, L = 130 TL115
Infineon Technologies
Original
c801 TL231 TL-205A TL204 DUT-11 c103 a ge

C801

Abstract: 1/db3 c801 Ohm TL114 2 3 RF_IN 2 1 2 3 1 2 3 TL111 1 1 GATE DUT 3 , 0.762 W1 = 120, W2 = 30, W3 = 120, W4 = 30 TL114 TL115 0.016 l, 51.98 W W = 1.087, L = , 1 TL114 TL104 TL117 TL111 2 1 à¸' à¸' à¸' à¸' à¸' à¸' à¸' à¸' à¸' à¸' à , TL113 0.180 l, 51.98 W W = 1.087, L = 15.291 W = 43, L = 602 TL114 0.039 l, 51.98 W W
-
Original
1/db3 c801

TRANSISTOR C802

Abstract: PTFA220121M TL107 2 TL114 1 TL111 GATE DUT Er=3.48 H=20 mil RO/RO4350B1 C103 10 pF TL106 C104 16 , Dimensions: mm Dimensions: mils TL114 TL115 TL116 0.016 l, 51.98 W 0.044 l, 51.98 W table , R802 1300 Ohm 3 E TL117 2 3 TL114 TL104 1 TL111 a 220121 m - v 4 _ bdin _ 2140 _ , TL113 TL114 TL115 TL116, TL117 TL118 0.018 l, 54.17 W 0.061 l, 41.75 W 0.022 l, 25.04 W 0.006 l
Infineon Technologies
Original
V4 MARKING atc100a200jw LM7805 c SMD p 4712

c102 TRANSISTOR

Abstract: tl113 TL113 TL102 TL117 3 1 TL114 2 3 1 TL110 2 , , W3 = 32 TL112, TL113, TL115, TL116 W = 0, L = 0 W = 0, L = 0 TL114, TL 117 W1 = , 2 3 3 TL108 Er=3.48 H=20 mil RO/RO4350B1 TL101 TL114 3 1 GATE DUT 2 , W = 40, L = 60 TL113 0.027 , 41.47 W = 1.524, L = 5.080 W = 60, L = 200 TL114
Infineon Technologies
Original
c104 TRANSISTOR tl2223 lm7805 regulator smd MARKING W1 RO4350B transistor C101

LM78L05ACM-ND

Abstract: LM78L05ACMND e l _ b d i n _ 0 9 - 0 7 - 2 0 1 0 t c u TL116 TL114 TL134 GATE DUT (Pin A) TL108 TL135 , , TL122, TL123, TL124 TL103 TL104, TL106 TL105 TL107 TL108 TL109 TL110 TL111 TL112 TL113 TL114 TL115
Infineon Technologies
Original
LM78L05ACM-ND LM78L05ACMND C210 PTFA091203EL H-33288-6

PCC104bct-nd

Abstract: TL114 TL108 TL112 TL109 TL106 C 102 33 pF TL 131 TL 134 TL 125 TL 127 TL , W = 65 TL113, TL114, TL115, TL116, TL117 W = 0.762 W = 30 TL118, TL119 0.014
Infineon Technologies
Original
PCC104bct-nd PTFA091503EL

PTFB210801

Abstract: NFM18PS105R0J3D nH TL117 S1 4 1 3 2 TL115 1 3 2 2 3 C103 10000000 pF TL113 TL114 2 1 TL118 TL128 , Dimensions: mils TL104 TL105 TL106 TL107 TL108 TL109 TL110 TL111 TL112 TL113 TL114, TL121 TL118, TL120
Infineon Technologies
Original
PTFB210801 NFM18PS105R0J3D TRANSISTOR tl131 490-4393-2-ND 800A150GT TL127 PTFB210801FA H-37265-2

transistor c735

Abstract: ATC100A120FW150XB TL111 RF_IN 2 TL110 TL114 2 3 1 R102 10 Ohm TL116 2 3 1 a 2 2 0 0 4 1 , 0 TL114, TL 117 W1 = 1.087, W2 = 0.813, W3 = 1.087 W4 = 0.813 W1 = 43, W2 = 32, W3 = 43
Infineon Technologies
Original
transistor c735 ATC100A120FW150XB TL1081 C735 transistor TRANSISTOR C103 TRANSISTOR C107

PTFB182503FL

Abstract: TRANSISTOR tl131 TL103 TL105 1 2 3 TL122 4 GATE DUT (Pin G) TL128 TL114 2 PTFB182503EL/FL_OUTPUT , , 68.02 TL109, TL110, TL132, 0.010 , 78.27 TL139 TL111 TL112, TL134 TL113 TL114 TL115 TL116, TL137
Infineon Technologies
Original
PTFB182503FL tl136 tl1182 ER805 ptfb18 tl239 PTFB182503EL H-34288-4/2
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