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Part : TIP2955 Supplier : STMicroelectronics Manufacturer : Avnet Stock : 120 Best Price : €0.3628 Price Each : €0.7355
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Part : TIP2955G Supplier : ON Semiconductor Manufacturer : Rochester Electronics Stock : 180 Best Price : $0.91 Price Each : $1.12
Part : TIP2955 Supplier : Motorola Manufacturer : Bristol Electronics Stock : 10 Best Price : $2.25 Price Each : $2.25
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TIP2955 application note

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for , . TOâ'247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the , May, 2012 â' Rev. 7 1 Publication Order Number: TIP3055/D TIP3055 (NPN), TIP2955 (PNP , ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Ã Ã Ã ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ NOTE: For , ) (IC = 10 Adc, VCE = 4.0 Vdc) Vdc hFE â' ON CHARACTERISTICS (Note 1 ON Semiconductor
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pin out TRANSISTOR tip2955 TIP2955 NPN power transistor
Abstract: TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. NOTE: For additional design curves , ) (IC = 10 Adc, VCE = 4.0 Vdc) Vdc hFE - ON CHARACTERISTICS (Note 1) Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) OFF CHARACTERISTICS Characteristic ELECTRICAL , Units / Rail TIP3055G SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP2955 SOT-93 (TO ON Semiconductor
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TIP3055 NPN power transistor 2N3055 power amplifier circuit 2N3055 TO-218 Package 2n3055 how to work equivalent transistor 2n3055 TIP3055 AS AN AMPLIFIER
Abstract: TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose , Symbol RqJC RqJA Max 1.39 35.7 Unit °C/W °C/W NOTE: Effective June 2012 this device will be available , Publication Order Number: TIP3055/D TIP3055 (NPN), TIP2955 (PNP) MARKING DIAGRAMS TO-247 TO , Symbol Min 60 - - - - Max - Unit Vdc Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0 , (off) = 1.5 Vdc) Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS (Note 1) DC ON Semiconductor
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TIP3055 pin out TIP3055 application 2N3055 Tip3055 Application Note tip2955 2n3055 east TIP3055-D
Abstract: hFE , DC CURRENT GAIN TIP3055 TIP2955 100 VCE = 4.0 V TJ = 25°C 1000 , Transistors TIP3055 PNP TIP2955 NPN SEMICONDUCTOR TECHNICAL DATA Order this document by TIP3055/D , : Pulse Width = 300 us, Duty Cycle 2.0%. NOTE: For additional design curves, refer to electrical , (TC = 25_C unless otherwise noted) TIP3055 TIP2955 TIP3055 TIP2955 PACKAGE DIMENSIONS C Q , CASE 340D­01 ISSUE A Motorola Bipolar Power Transistor Device Data 3 TIP3055 TIP2955 Motorola
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2N3055* motorola transistors tip3055 TRANSISTOR 023 power transistor 2n3055 motorola power transistor 2N3055 circuit tip2955
Abstract: ON Semiconductort NPN Complementary Silicon Power Transistors TIP3055 PNP TIP2955 . , GAIN 1000 VCE = 4.0 V TJ = 25°C 100 10 0.1 TIP3055 TIP2955 0.2 0.5 0.7 1.0 0.3 , TIP3055 TIP2955 Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î , ; Nonrepetitive) DYNAMIC CHARACTERISTICS (1) Pulse Test: Pulse Width = 300 us, Duty Cycle v 2.0%. NOTE: For , Safe Operating Area http://onsemi.com 2 TIP3055 TIP2955 PACKAGE DIMENSIONS CASE 340D­02 ON Semiconductor
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2n3055 IC of 2n3055 2N3055 transistor equivalent 2N3055 219 tip3055
Abstract: PNP TIP2955 Complementary Silicon Power Transistors . . . designed for general­purpose switching , 25°C 100 10 0.1 TIP3055 TIP2955 0.2 0.3 2.0 3.0 0.5 0.7 1.0 IC, COLLECTOR CURRENT , Power Transistor Device Data 1 TIP3055 TIP2955 Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î , ; Nonrepetitive) DYNAMIC CHARACTERISTICS v (1) Pulse Test: Pulse Width = 300 us, Duty Cycle 2.0%. NOTE , Data TIP3055 TIP2955 PACKAGE DIMENSIONS C Q B U S E 4 A L 1 K NOTES Motorola
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2n3055 motorola Motorola transistors tip3055 Motorola tip3055 motorola 2n3055 2N3055 NPN MOTOROLA POWER TRANSISTOR MOTOROLA TRANSISTOR
Abstract: ON Semiconductort NPN Complementary Silicon Power Transistors TIP3055 PNP TIP2955 . , GAIN 1000 VCE = 4.0 V TJ = 25°C 100 10 0.1 TIP3055 TIP2955 0.2 0.5 0.7 1.0 0.3 , TIP3055 TIP2955 Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î , ; Nonrepetitive) DYNAMIC CHARACTERISTICS (1) Pulse Test: Pulse Width = 300 us, Duty Cycle v 2.0%. NOTE: For , Safe Operating Area http://onsemi.com 2 TIP3055 TIP2955 PACKAGE DIMENSIONS CASE 340D­02 ON Semiconductor
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2N3055 equivalent transistor NUMBER power transistor tip3055 equivalent transistor TIP3055 2N3055 MEXICO 2N3055 curve TIP3055 220
Abstract: safe­operating area these devices must withstand. For a complete discussion see Application Note AN485. Table , discussion of mounting is contained in Motorola Application Note AN1040,"Mounting Considerations for Power , Safe Operating Area MAXIMUM RATINGS TIP3055 PNP TIP2955 15 AMPERE POWER TRANSISTORS COMPLEMENTARY , 4.0 V TJ = 25°C 100 TIP3055 TIP2955 10 0.1 0.2 0.3 2.0 3.0 0.5 0.7 1.0 IC, COLLECTOR , ÎÎÎÎ ÎÎÎ v TIP3055 TIP2955 Max Unit ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted Motorola
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BD4185 BD139.6 BD139.10 equivalent transistor TIP2955 2SC1419 2SC1237 MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011
Abstract: cells) to be charged using one circuit. In its simplest application, the MAX846A is a standalone , (Note 1) (VDCIN = 10V, ON = VL, IVL = IVSET = 0mA, VCS- = VCS+ = 10V, VBATT = 4.5V, VOFFV = VCELL2 = 0V , VDRV = 20V, ON = GND 20 Note 1: Specifications to -40°C are guaranteed by design and not , 100mA = -Charging at 200mA 2 Li-Ion Cells CCCV = 10nF COUT = 4.7uF TIP2955 PNP PASS TRANSISTOR , Li-Ion batteries using one application circuit (Figure 3). Maxim Integrated Products
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3.7v battery charger circuit diagram circuit diagram CCCV battery 3.7V maxim li-ion cccv based battery charge controller MAX846AEEE tip2955 kit MAX846
Abstract: cells) to be charged using one circuit. In its simplest application, the MAX846A is a standalone , (Note 1) (VDCIN = 10V, ON = VL, IVL = IVSET = 0mA, VCS- = VCS+ = 10V, VBATT = 4.5V, VOFFV = VCELL2 = 0V , VDRV = 20V, ON = GND 20 Note 1: Specifications to -40°C are guaranteed by design and not , 100mA = -Charging at 200mA 2 Li-Ion Cells CCCV = 10nF COUT = 4.7uF TIP2955 PNP PASS TRANSISTOR , Li-Ion batteries using one application circuit (Figure 3). Maxim Integrated Products
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Abstract: (Li-Ion, NiMH or NiCd cells) to be charged using one circuit. In its simplest application, the MAX846A , ELECTRICAL CHARACTERISTICS (Note 1) (VDCIN = 10V, ON = VL, IVL = IVSET = 0mA, VCS- = VCS+ = 10V, VBATT = , 3V DRV Off Current VDRV = 20V, ON = GND 20 Note 1: Specifications to -40° are guaranteed , COUT = 4.7ÂuF TIP2955 PNP PASS TRANSISTOR -30 -60 -40 -90 -50 -20 -120 1M -60 , interfacing with a low-cost ÂuC to charge Ni-based and Li-Ion batteries using one application circuit (Figure Maxim Integrated Products
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Abstract: ) 100 BD681 (Note 9) MJE243 5.0 25 MJE200 8. Switching test performed with special application , min 20/100 TIP147 (Note 21) 500 min 500/3400 TIP2955 MJH11017 (Note 21) MJH11019 (Note 21) MJH11021 , complete discussion see Application Note AN485. Recommended Power Transistors for Audio/Servo Loads RMS , Range (Volts) 30 PD (Watts) SO-8 2.0 (Note 2) SOT-223 0.5-3.0 30 2.0 (Note 1) DPAK , 400 2.0 45 50 100 450 3.0 40 100 4.0 80 NJD2873T4 MJD112T4 (Note 3) MJD18002D2T4 MJD31T4 MJD31CT4 ON Semiconductor
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2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 MMDJ3N03BJTR2 MMDJ3P03BJTR2 MMJT9410T1 MMJT350T1 MMJT9435T1 MJD6039T4
Abstract: cells) to be charged using one circuit. In its simplest application, the MAX846A is a standalone , (Note 1) (VDCIN = 10V, ON = VL, IVL = IVSET = 0mA, VCS- = VCS+ = 10V, VBATT = 4.5V, VOFFV = VCELL2 = 0V , VDRV = 20V, ON = GND 20 Note 1: Specifications to -40°C are guaranteed by design and not , 200mA 2 Li-Ion Cells CCCV = 10nF COUT = 4.7uF TIP2955 PNP PASS TRANSISTOR -30 -90 120 60 , Li-Ion batteries using one application circuit (Figure 3). Maxim Integrated Products
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Abstract: Loops ♦ ±0.5% Internal Reference for Li-Ion Cells ♦ Lowers Cost: In its simplest application , Battery-Charger System ELECTRICAL CHARACTERISTICS (Note 1) (Vdcin = 10V, ON = VL, otherwise noted.) Iv l , Current V drv = 20V, mA 20 V drv = 3V DRV Off Current on = 100 gnd Note 1 , -Chargmq at 200mA 2 Li-Ion Cells . C =!0nF ccV Cour = 4.7(iF I TIP2955 PNP PASS , Ni-based and Li-Ion batteries using one application circuit (Figure 3). y k i» x iy M Sà -
OCR Scan
Abstract: point of view, current and voltage are not interchangeable (see Application Note AN875). 2. TURN­ON - , rectifiers, and are valid for turn­on crossover times less than 100 ns (see Application Note AN952). At , drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note , (see Application Note AN875). 4. OPERATION ABOVE VCEO(sus) - When bipolars are operated above , but a clean crisp input signal (see Application Note AN952). SWITCHMODE DESIGN CONSIDERATIONS 1 Motorola
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MJ3001 equivalent BD907 equivalent Motorola transistors MJE3055 TO 127 Drive IC 2SC3346 transistor equivalent book 2sc2238 mje340 equivalent MJW16010A MJ15016 BU208A MJE16106 MJ16012 MJ10009
Abstract: power handling point of view, current and voltage are not interchangeable (see Application Note AN875). , Application Note AN952). At voltages above 75% of V CEO(sus), it is essential to provide the transistor with , condition (see Application Note AN875). 3. TURN­OFF - A bipolar transistor's ability to withstand turn­off , light loads due to heavy overdrive (see Application Note AN875). 4. OPERATION ABOVE VCEO(sus) - When , output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952 Motorola
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TRANSISTOR REPLACEMENT GUIDE bd139 equivalent 2SC495 mje13007 equivalent bd139 equivalent transistor 2sd880 equivalent MJH16006A TIP101 TIP102 TIP106 TIP107 TIP31C
Abstract: point of view, current and voltage are not interchangeable (see Application Note AN875). TURN­ON Safe , this condition (see Application Note AN875). TURN­OFF A bipolar transistor's ability to withstand , at light loads due to heavy overdrive (see Application Note AN875). OPERATION ABOVE V(BR)CEO(sus , absence of anything but a clean crisp input signal (see Application Note AN952). RBSOA Reversed Biased , results in several types of circuits (see Application Note AN951). DESIGN SAMPLES Transistor parameters Motorola
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MJ802 EQUIVALENT MJ4502 EQUIVALENT bd131 equivalent MJ15025* equivalent ST T8 3580 MJ3055 equivalent MJ16110 MJW16110 TIP32C TIP120 TIP121 TIP122
Abstract: interchangeable (see Application Note AN875). Motorola Bipolar Power Transistor Device Data MJE16106 TURN­ON , voltage in excess of 10 volts is required to meet this condition (see Application Note AN875). TURN­OFF A , base drive are more likely to fail at light loads due to heavy overdrive (see Application Note AN875). , signal (see Application Note AN952). RBSOA Reversed Biased Safe Operating Area has a first order , Application Note AN951). DESIGN SAMPLES Transistor parameters tend to vary much more from wafer lot to wafer Motorola
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transistor 2SA1046 motorola transistor cross reference transistor equivalent book 2SC2073 transistor 40251 transistor bd610 pin configuration transistor bd140 TIP125 TIP126 TIP127 TIP73B TIP74 TIP74A
Abstract: mounting power semiconductors see Application Note AN1040. Motorola Bipolar Power Transistor Device Data , safe­operating area these devices must withstand. For a complete discussion see Application Note AN485. Table , discussion of mounting is contained in Motorola Application Note AN1040,"Mounting Considerations for Power , Equivalent Note: Adjust ­ V to obtain desired VBE(off) at Point A. Figure 10. RBSOA/V(BR)CEO(sus) Test , MPF930 +10 MUR105 MPF930 MUR105 50 RB2 MTP12N10 MJE210 150 VOff Note: Test Circuit for Ultrafast FBSOA Motorola
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2SC123 sec tip41c sec tip42c TRANSISTOR tip41c pin out image TRANSISTOR BC 327 transistors BC 458 pnp MJW16206 MJF16206 TIP74B TIP75 TIP75A TIP75B
Abstract: withstand. For a complete discussion see Application Note AN485. Table 9. Recommended Power Transistors , 125 V RC = 15 D1 = 1N5820 or Equiv. RB = +10 V 25 us NOTE PW and VCC Adjusted for Desired IC RB , . (1) For detailed information on specific switching applications, see Motorola Application Notes AN , (continued) In the four application examples (Table 2) load lines are shown in relation to the pulsed forward , gain condition which must be duplicated or exceeded in the application to control the saturation Motorola
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transistor bc 647 bd139 3v BD679 coil 50W AMP 2SD718 2SB688 TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams MJE13009 TIP75C 2N6488 2N6490 2N6491 MJE13005
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