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TIP115 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 visit Texas Instruments

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TIP115 Datasheet

Part Manufacturer Description PDF Type
TIP115 Bourns PNP SILICON POWER DARLINGTONS Original
TIP115 Fairchild Semiconductor PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR Original
TIP115 Fairchild Semiconductor PNP Epitaxial Silicon Darlington Transistor Original
TIP115 Fairchild Semiconductor PNP Epitaxial Silicon Darlington Transistor; Package: TO-220; No of Pins: 3; Container: Bulk Original
TIP115 Motorola DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Original
TIP115 On Semiconductor Plastic Medium-Power Complementary Silicon Transistors Original
TIP115 On Semiconductor Plastic Medium-Power Complementary Silicon Transistor Original
TIP115 Philips Semiconductors Silicon Darlington Power Transistors Original
TIP115 Power Innovations PNP SILICON POWER DARLINGTONS Original
TIP115 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Original
TIP115 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Original
TIP115 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANASISTORS Original
TIP115 Taitron Components Darlington Power Transistors (PNP) Original
TIP115 Texas Instruments PNP DARLINGTON-CONNECYED SILICON POWER TRANSISTORS Original
TIP115 Boca Semiconductor PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Scan
TIP115 Central Semiconductor POWER DARLINGTON TRANSISTORS (EPOXY) Scan
TIP115 Central Semiconductor Leaded Power Transistor Darlington Scan
TIP115 Continental Device India PLASTIC POWER TRANSISTORS Scan
TIP115 Continental Device India Semiconductor Device Data Book 1996 Scan
TIP115 Fairchild Semiconductor SILICON DARLINGTON TRANSISTOR Scan
Showing first 20 results.

TIP115

Catalog Datasheet MFG & Type PDF Document Tags

pin diagram of ic 4066

Abstract: 10 amp pnp darlington power transistors TIP110, TIP115. · Collector-emitter saturation voltage-VCE (sat) = 2.5V (Maximum) at IC = 2.0A. · , TIP110, TIP115 Darlington Transistors Features: Designed for general-purpose amplifier and low , -220 Dimensions : Millimetres Maximum Ratings Characteristic PNP TIP115 4.98 Pin 1. Base 4. Collector (Case) NPN TIP110 Symbol TIP110 TIP115 Unit Collector-Emitter Voltage VCEO , .0 TIP110, TIP115 Darlington Transistors PD, Power Dissipation (Watts) Figure - 1 Power Derating
Multicomp
Original
pin diagram of ic 4066 10 amp pnp darlington power transistors 10 amp npn darlington power transistors with low saturation voltage 16 amp npn darlington power transistors NPN 200 VOLTS POWER TRANSISTOR 300 W npn darlington power transistors
Abstract: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with , V -80 V -100 TIP117 Emitter-base voltage -80 -60 TIP115 TIP116 UNIT -100 TIP117 Collector-emitter voltage (IB = 0) VALUE -60 TIP115 VEBO -5 V IC -4 A , DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP115 , voltage TEST CONDITIONS MIN TIP115 IC = -30 mA IB = 0 TIP116 MAX -80 TIP117 Bourns
Original
TIP111 TIP112 TCS115AB TCS115AC SAS115AA TIS110AA

tip117 TRANSISTOR equivalent

Abstract: TIP110 TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS Designed for Complementary Use with , temperature (unless otherwise noted) RATING SYMBOL TIP115 Collector-base voltage (IE = 0) TIP116 V CBO -80 V -100 TIP115 TIP116 UNIT -60 TIP117 Collector-emitter voltage (IB , TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , breakdown voltage TEST CONDITIONS MIN TIP115 IC = -30 mA IB = 0 TIP116 MAX -80
Bourns
Original
tip117 TRANSISTOR equivalent TIP-115

tip117

Abstract: TIP116 TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS G Designed for Complementary Use with , °C case temperature (unless otherwise noted) RATING SYMBOL TIP115 Collector-base voltage (IE = 0) TIP116 V CBO -80 V -100 TIP115 TIP116 UNIT -60 TIP117 Collector-emitter voltage , notice. 1 TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS electrical characteristics at , cut-off current TEST CONDITIONS MIN TIP115 IC = -30 mA IB = 0 TIP116 MAX -80
-
Original

TIP115

Abstract: TIP117 PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ , MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage :TIP115 VcbO -60 V : TIP116 -80 V : TIP117 -100 V Collector Emitter Voltage :TIP115 VcEO -60 V :TIP116 -80 V :TIP117 , = 0 TIP115 ' -60 V TIP116 -80 V TIP117 -100 V Collector Cutoff Current TIP115 IcEO , Cutoff Current TIP115 IcBO VCB = -60V, lE=0 -1 mA TIP116 VCB = -80V, lE=0 -1 mA TIP117 VCB= -100V
-
OCR Scan
2A 80v complementary transistor 60V transistor npn 2a TIP115/116/117 TIP110/111/112

tip117

Abstract: TIP116 TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington Transistor â'¢ â'¢ â'¢ â'¢ â , otherwise noted Collector-Base Voltage Parameter : TIP115 : TIP116 : TIP117 VCEO Ratings - 60 - 80 - 100 - 60 - 80 - 100 Collector-Emitter Voltage : TIP115 : TIP116 : TIP117 Units , Semiconductor Corporation TIP115/TIP116/TIP117 Rev. 1.0.0 www.fairchildsemi.com 1 TIP115/TIP116/TIP117 â , Collector-Emitter Sustaining Voltage : TIP115 : TIP116 : TIP117 Test Condition ICEO Collector Cut-off
Fairchild Semiconductor
Original
TIP115/TIP116/TIP117 TIP11

TIP117

Abstract: TIP116 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE , : TIP117 -100 V Collector Emitter Voltage :TIP115 VCBO 1.Base 2.Collector 3.Emitter Collector Emitter Voltage -60 V :TIP116 -80 V :TIP117 -100 V :TIP115 VCEO , Symbol Collector Emitter Sustaining Voltage : TIP115 VCEO(sus) Test Conditions Min Max , Current : TIP115 : TIP116 -2 mA -2 mA VCB = -60V, IE = 0 -1 mA -1 mA VCB =
Samsung Electronics
Original
NPN Transistor TO220 VCEO 80V 100V PNP NPN Transistor VCEO 80V 100V Ic 2A tip115 transistor NPN Transistor VCEO 80V 100V DARLINGTON

TIP115

Abstract: TIP117 TIP115/116/117 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector , RATINGS (Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP115 VCBO Collector-base voltage TIP116 , Emitter-base voltage IC -80 V -100 TIP117 VEBO V -100 TIP115 VCEO UNIT Open , Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP115/116/117 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP115 VCEO(SUS
-
Original
pnp Darlington Darlington high voltage pnp darlington

TIP110

Abstract: TIP112 TIP110/112 TIP115/117 ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s , TIP115 and TIP117. INTERNAL SCHEMATIC DIAGRAM R 1 T yp.= 7K R 2 T yp.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t NPN TIP110 TIP112 PNP TIP115 TIP117 V , negative June 1999 1/6 TIP110/TIP112/TIP115/TIP117 THERMAL DATA R t hj-ca se R t hj- amb , TIP110/TIP112/TIP115/TIP117 DC Current Gain (NPN type) DC Current Gain (PNP type
STMicroelectronics
Original
morocco tip112 NPN Darlington IC schematic TIP115/117 TIP110/TIP112/TIP115/TIP117 P011C

TIP115

Abstract: tip117 TRANSISTOR equivalent TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS Designed for Complementary Use with , temperature (unless otherwise noted) RATING SYMBOL TIP115 Collector-base voltage (IE = 0) TIP116 V CBO -80 V -100 TIP115 TIP116 UNIT -60 TIP117 Collector-emitter voltage (IB , TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , breakdown voltage TEST CONDITIONS MIN TIP115 IC = -30 mA IB = 0 TIP116 MAX -80
Bourns
Original
Abstract: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with , B O TIP117 TIP115 Collector-emitter voltage (IB = 0) TIP116 V CEO TIP117 Emitter-base voltage VALUE UNIT -60 TIP115 -80 V -100 -60 -80 V -100 VEBO -5 , change without notice. 1 TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS electrical , Collector-emitter breakdown voltage TEST CONDITIONS MIN TIP115 IC = -30 mA IB = 0 TIP116 MAX Bourns
Original

TIP11

Abstract: TIP110 e IRANSYS ELECTRONICS LIMITI!» TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS â , temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (lE = 0) TIP115 TIP116 TIP117 vcbo -60 -80 -100 V Collector-emitter voltage (lB = 0) TIP115 TIP116 TIP117 vceo -60 -80 -100 V , Q, Vcc = -20 V. TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS electrical characteristics , breakdown voltage lc = -30 mA (see Note 5) lb = 0 TIP115 TIP116 TIP117 -60 -80 -100 V 'ceo
-
OCR Scan
T0-220 T0220
Abstract: TIP110 TIP110G TIP111 TIP111G TIP112 TIP112G TIP115 TIP115G TIP116 TIP116G TIP117 TIP117G , TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary , ' TIP110, TIP115 = 80 Vdc (Min) â' TIP111, TIP116 = 100 Vdc (Min) â' TIP112, TIP117 Low , ); TIP115, TIP116, TIP117 (PNP) MAXIMUM RATINGS Symbol Rating Collectorâ'Emitter Voltage TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Unit VCEO 60 80 100 Vdc ON Semiconductor
Original
220AB TIP110/D

TIP112

Abstract: TIP117 TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s , medium power linear and switching applications. The complementary PNP types are TIP115 and TIP117 , RATINGS Symbol Parameter Value Unit NPN TIP110 TIP112 PNP TIP115 TIP117 V , and current values are negative September 1997 1/6 TIP110/TIP112/TIP115/TIP117 THERMAL DATA , TIP110/TIP112/TIP115/TIP117 DC Current Gain (NPN type) DC Current Gain (PNP type
STMicroelectronics
Original
ST Microelectronics Transistors 117 IC tip110 st

TIP111G

Abstract: TIP117 TIP111 TIP111G TIP112 TIP112G TIP115 TIP115G TIP116 TIP116G TIP117 TIP117G 2 0 0 0 , TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 , TIP110, TIP115 = 80 Vdc (Min) - TIP111, TIP116 = 100 Vdc (Min) - TIP112, TIP117 ·Low Collector-Emitter , Mounting Techniques Reference Manual, SOLDERRM/D. 1 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î MAXIMUM RATINGS Symbol Rating Collector-Emitter Voltage TIP110, TIP115
ON Semiconductor
Original
TIP11X

morocco tip112

Abstract: tip110 st TIP110/112 TIP115/117 ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s , are TIP115 and TIP117. INTERNAL SCHEMATIC DIAGRAM R 1 Typ.= 7K R 2 Typ.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP110 TIP112 PNP TIP115 , voltage and current values are negative June 1999 1/6 TIP110/TIP112/TIP115/TIP117 THERMAL DATA , . Derating Curve V V 2.5 2.8 1000 500 V V TIP110/TIP112/TIP115/TIP117 DC Current Gain (NPN
STMicroelectronics
Original
ST TIP110

TIP-115

Abstract: TIP115 TIP115/116/117 DESCRIPTION With TO-220C package DARLINGTON High DC current gain Low collector , CHA IN Collector-emitter voltage TIP115 TIP116 Open emitter Emitter-base voltage IC VALUE UNIT -60 -80 TIP117 TIP115 V -100 -60 TIP116 Open base TIP117 VEBO , Silicon PNP Darlington Power Transistors TIP115/116/117 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TIP115 VCEO(SUS) Collector-emitter sustaining voltage
-
Original
ic darlington PNP 100V 2A

tip117 TRANSISTOR equivalent

Abstract: TIP117 TIP115/TIP116/TIP117 PNP Epitaxial Silicon Darlington Transistor · · · · · Monolithic , Collector-Base Voltage Parameter : TIP115 : TIP116 : TIP117 Ratings - 60 - 80 - 100 Units V V V - 60 - 80 - 100 V V V VCEO Collector-Emitter Voltage : TIP115 : TIP116 : TIP117 , serviceability of any semiconductor device may be impaired. © 2007 Fairchild Semiconductor Corporation TIP115/TIP116/TIP117 Rev. 1.0.0 www.fairchildsemi.com 1 TIP115/TIP116/TIP117 - PNP Epitaxial Silicon
Fairchild Semiconductor
Original
TRANSISTOR TIP117 Transistor Equivalent list tip 117

Transistor Equivalent list tip 117

Abstract: tip117 TRANSISTOR equivalent TIP115/116/117 TIP115/116/117 Monolithic Construction With Built In BaseEmitter Shunt Resistors , otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP115 : TIP116 : TIP117 Value - 60 - 80 - 100 Units V V V VCEO Collector-Emitter Voltage : TIP115 : TIP116 , : TIP115 : TIP116 : TIP117 Test Condition IC = -30mA, IB = 0 Min. Max. -60 -80 -100 Units V V V Collector Cut-off Current : TIP115 : TIP116 : TIP117 -2 -2 -2 mA mA mA
Fairchild Semiconductor
Original
Abstract: Si SGS-THOMSON HDoÅ"iiLKerasiiüiDes TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER , TIP115 and TIP117. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS S ym bol P aram eter , 1/6 TIPI 10/TIP112/TIP115/TIP117 THERMAL DATA R th j- c a s e R th j-a m b Therm al R , ( I b = 0) ro > > Sym bol (Tease Max Max V TIP110/TIP112/TIP115/TIP117 DC , Saturation Voltage (PNP type) TIP110/TIP112/TIP115/TIP117 Base-Emitter On Voltage (NPN type) 0 0 -
OCR Scan
10/TIP112/TIP115/TIP117
Abstract: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , ) RATING TIP115 Collector-base voltage ( lE = 0) TIP116 TIP117 TIP115 Collector-em itter voltage ( lB = 0 , standard warranty. Production processing does not necessarily include testing of all parameters. TIP115 , characteristics at 25°C case temperature PARAMETER Collector-em itter V (B R )C E O T EST CO NDITIONS TIP115 , V -50 V -60 V -80 V TIP115 TIP116 TIP117 TIP115 TIP116 TIP117 -2 -2 -2 -1 -1 -1 -2 1000 500 -
OCR Scan

16 amp npn darlington power transistors

Abstract: MOTOROLA TIP115 transistor Sustaining Voltage - @ 3 0 mAdc V C E O isusI = 60 Vdc (Min) - TIP110, TIP115 = 80 Vdc (Min) - TIP111 , VCEO VCB Veb ic TIP110, TIP115 60 60 TIP111, TIP116 80 80 5.0 2.0 4.0 50 50 0.4 2.0 0.016 25 , ) (I q = 30 mAdc, Ib = 0) V cE O (su s) TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 'CEO TIP110, TIP115 TIP111, TIP116 TIP112 ,TIP117 ICBO TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 lEBO 60 80 100 - , 10 Vdc, lE = 0, f = 0.1 MHz) hfe 25 - - C0 b TIP115, TIP116, TIP117 TIP110, TIP111, TIP112 PF
-
OCR Scan
MOTOROLA TIP115 transistor BTA 006 TMP117

TIP11S

Abstract: TIP112 - Vceexsus) » «> V (Min) - TIPI 10.TIP115 » 80 V (Min) - TIP111,TIP116 » 100 V (Min) - TIP112.TIP117 , Base-Emitter Shunt Resistor MAXIMUM RATINGS NPN PNP TIP110 TIP115 TIP111 TIP116 TIP112 TIP117 Characteristic Symbol TIP110 TIP115 TIP111 TIP116 TIP112 TIP117 Unit Collector-Emitter Voltage vceo 60 80 100 , / TIP115, TIP116, TIP117 PNP ELECTRICAL CHARACTERISTICS ( Tc = 25°C unless otherwise noted , .TIP117 'ceo 2.0 2.0 2.0 mA Collector Cutoff Current ( VCB = 60 V, lE = 0 ) TIP110,TIP115 ( VCB = 80 V, lE =
-
OCR Scan
TIP11S TIP112T tip111.tip116
Showing first 20 results.