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    TIM5359 Search Results

    TIM5359 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TIM5359-16 Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-16G1B, 3 PIN, FET RF Power Original PDF
    TIM5359-16 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5359-16EL Toshiba TIM5359 - TRANSISTOR RF POWER, FET, FET RF Power Original PDF
    TIM5359-16L Toshiba Transistor Scan PDF
    TIM5359-16SL Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-16G1B, 2 PIN, FET RF Power Original PDF
    TIM5359-16UL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 42.5; G1dB (dB): 10; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B Original PDF
    TIM5359-30L Toshiba Low Distortion Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5359-35SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM5359-35SL Toshiba Microwave Power GaAs FET Scan PDF
    TIM5359-4 Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11D1B, 3 PIN, FET RF Power Original PDF
    TIM5359-4 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
    TIM5359-4 Toshiba POWER GAAS FET Scan PDF
    TIM5359-45SL Toshiba C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 46.5; G1dB (dB): 9; Ids (A) Typ.: 9.6; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 0.8; Package Type: 2-16G1B Original PDF
    TIM5359-45SL Toshiba Microwave Power GaAs FET Scan PDF
    TIM5359-45SL Toshiba MICROWAVE POWER GaAs FET Scan PDF
    TIM5359-4SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM5359-4UL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM5359-60SL Toshiba MICROWAVE POWER GaAs FET Original PDF
    TIM5359-8 Toshiba TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11D1B, 3 PIN, FET RF Power Original PDF
    TIM5359-8 Toshiba Internally Matched Power GaAs FET (C-Band) Original PDF
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    TIM5359 Price and Stock

    Toshiba America Electronic Components TIM535916SL

    MICROWAVE POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA TIM535916SL 4
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    Toshiba America Electronic Components TIM535935SL

    RF POWER FIELD EFFECT TRANSISTOR RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Junction FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TIM535935SL 5
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