500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
CRCW0201825RFNED Vishay Dale 0201,825,200PPM,1%,T/R,HAZMAT - Tape and Reel visit Digikey Buy

TGS 825 Datasheet

Part Manufacturer Description PDF Type
TGS 825 Figaro Engineering Special Sensor for Hydrogen Sulfide Original
TGS8250 TriQuint Semiconductor SPDT FET Switch Original
TGS8250-SCC TriQuint Semiconductor SPDT FET Switch Original
TGS8250-SCC TriQuint Semiconductor Analog Switch / Multiplexer, GaAs Single Pole, Double Throw (SPDT) FET Monolithic Switch Original

TGS 825

Catalog Datasheet MFG & Type PDF Document Tags

gas sensor TGS 825

Abstract: hydrogen sulfide gas sensor FIGARO PRODUCT INFORMATION TGS 825 - Special Sensor for Hydrogen Sulfide Features: Applications: * Hydrogen sulfide detectors/ alarms * High sensitivity to low concentration of hydrogen , Sensor Resistance Standard Test Conditions: TGS 825 complies with the above electrical , the change in conductivity to an output signal which corresponds to the gas concentration. The TGS 825 has high sensitivity to hydrogen sulfide. The sensor can detect concentrations of hydrogen
Figaro Engineering
Original
gas sensor TGS 825 hydrogen sulfide gas sensor hydrogen sensor TGS 825 data pin Figaro application note figaro sensor

TGS 2610

Abstract: gas sensor TGS 825 .8 See also Technical Brochure `Technical Information on Usage of TGS Sensors for Toxic and Explosive , concentration (i.e. Rs/RL = 1.0). Please refer to the brochure "General Information for TGS Sensors" for more , equal to half of the circuit voltage (Vc). Revised 08/03 RA RTH 4 1 TGS 2610 D.C , 4.02 3.57 22 7.50 5.36 4.42 3.92 23 8.25 5.90 4.87 4.32 24 9.09 , . Cautions listed in Sec. 6-1.3 of "General Information for TGS Sensors" should also be observed. 3
-
Original
TGS2610 TGS 2610 78M05 mitsubishi UL2075 sensor tgs 2610 LPM-2610 Diode 1S1588 ISO9001 S5566G 1S1588 LM393 LM339

DG808BC

Abstract: DG808BC45 mJ tgs Storage time - 25 µs tgf Fall time IT = 3000A, VDM = VDRM 2 µs , /us 25 CS = 4uF CS = 2.5 uF Gate storage time Tgs - (us) Turn-off energy per pulse EOFF , 40A/uS 12000 Turn-off gate charge QGQ - (uC) 825 Peak reverse gate current IGQM - (A
Dynex
Original
DG808BC45 DG808BC DS5914-2 LN31731
Abstract: mJ tgs Storage time - 25 µs tgf Fall time IT = 3000A, VDM = VDRM 2 µs , = 40 A/us 25 CS = 4uF CS = 2.5 uF Gate storage time Tgs - (us) Turn-off energy per , 125oC Conditions: Cs = 4.0uF diGQ/dt = 40A/uS 12000 Turn-off gate charge QGQ - (uC) 825 Dynex
Original
DS5914-1 LN26575

TGS 825

Abstract: DG808BC mJ tgs Storage time - 25 µs tgf Fall time IT = 3000A, VDM = VDRM 2 µs , = 40 A/us 25 CS = 4uF CS = 2.5 uF Gate storage time Tgs - (us) Turn-off energy per , 125oC Conditions: Cs = 4.0uF diGQ/dt = 40A/uS 12000 Turn-off gate charge QGQ - (uC) 825
Dynex
Original
gate turn-off Gate Turn-Off Thyristors A780A 360Kn

BUK553-50B

Abstract: BUK553-50A 1 MHz - 700 825 pF C_ Output capacitance - 240 350 pH Câ'žs Feedback capacitance 130 160 pt , ) ; conditions: Vos = 25 V; parameter 7} vas TOI IV â'". 30 tGS max
-
OCR Scan
BUK553-50A BUK553-50B T0220AB buk553 50A POWER TRANSISTOR FOR SMPS T0220 PACKAGE buk553 BUK553 T0220 M89-1153/RC
Abstract: /fPCLK 1.5/fPCLK 0.55 0.58 10 2 µs ms µs s MHz UNIT tpd(L) tH × fCLK0 tGS tpwrup tpwrdn 0.5 11 , to disregard short input pulses. tGS is the duration of either a high-to-low or low-to-high , VOD CLK­, Dx­ VOCM R2 = 49.9 W VOCM VDx­ or VCLK­ 975 mV (Nom) 825 mV (Nom) CLK+, Dx , Output Pulse Position Measurement TXEN VDD/2 tGS PCLK VCO Internal Signal PLL Approaches , INFORMATION (continued) 3 ms Glitch Shorter Than tGS Will Be Ignored TXEN tpwrup CLK+ tGS tGS tpwrdn Texas Instruments
Original
SN65LVDS307 SLLS834 27-BIT SN65LVDS308 810-M ISO/TS16949

B0237

Abstract: TGS 880 100 tH × fCLK0 Output CLK duty cycle tGS TXEN glitch suppression pulse duration (3 , glitch-suppression circuitry to disregard short input pulses. tGS is the duration of either a high-to-low or , ­ 825 mV (Nom) VOD VOCM CLK­, Dx­ VOCM R2 = 49.9 W SN65LVDS307 C3 = 1 pF C1 = 1 pF , -01 Figure 11. tSK(0) SubLVDS Output Pulse Position Measurement TXEN VDD/2 tGS PCLK VCO Internal , PARAMETER MEASUREMENT INFORMATION (continued) 3 ms
Texas Instruments
Original
B0237 TGS 880
Abstract: ) TXEN at VDD, VIH = VDD, VIL = GND, RL = 100 â"¦ tH × fCLK0 Output CLK duty cycle tGS TXEN , input pulses. tGS is the duration of either a high-to-low or low-to-high transition that is suppressed , CLK+, Dx+ 975 mV (Nom) VDxâ'" or VCLKâ'" 825 mV (Nom) VOD VOCM CLKâ'", Dxâ'" VOCM , -01 Figure 11. tSK(0) SubLVDS Output Pulse Position Measurement TXEN VDD/2 tGS PCLK VCO Internal , PARAMETER MEASUREMENT INFORMATION (continued) 3 ms Texas Instruments
Original

TGS 825

Abstract: /fPCLK 1.5/fPCLK 0.55 0.58 10 2 µs ms µs s MHz UNIT tpd(L) tH × fCLK0 tGS tpwrup tpwrdn 0.5 11 , to disregard short input pulses. tGS is the duration of either a high-to-low or low-to-high , VOD CLK­, Dx­ VOCM R2 = 49.9 W VOCM VDx­ or VCLK­ 975 mV (Nom) 825 mV (Nom) CLK+, Dx , Output Pulse Position Measurement TXEN VDD/2 tGS PCLK VCO Internal Signal PLL Approaches , INFORMATION (continued) 3 ms Glitch Shorter Than tGS Will Be Ignored TXEN tpwrup CLK+ tGS tGS tpwrdn
Texas Instruments
Original
Abstract: /fPCLK 1.5/fPCLK 0.55 0.58 10 2 µs ms µs s MHz UNIT tpd(L) tH × fCLK0 tGS tpwrup tpwrdn 0.5 11 , to disregard short input pulses. tGS is the duration of either a high-to-low or low-to-high , VOD CLK­, Dx­ VOCM R2 = 49.9 W VOCM VDx­ or VCLK­ 975 mV (Nom) 825 mV (Nom) CLK+, Dx , Output Pulse Position Measurement TXEN VDD/2 tGS PCLK VCO Internal Signal PLL Approaches , INFORMATION (continued) 3 ms Glitch Shorter Than tGS Will Be Ignored TXEN tpwrup CLK+ tGS tGS tpwrdn Texas Instruments
Original

T0250

Abstract: SN65LVDS307 100 tH × fCLK0 Output CLK duty cycle tGS TXEN glitch suppression pulse duration (3 , glitch-suppression circuitry to disregard short input pulses. tGS is the duration of either a high-to-low or , ­ 825 mV (Nom) VOD VOCM CLK­, Dx­ VOCM R2 = 49.9 W SN65LVDS307 C3 = 1 pF C1 = 1 pF , -01 Figure 11. tSK(0) SubLVDS Output Pulse Position Measurement TXEN VDD/2 tGS PCLK VCO Internal , PARAMETER MEASUREMENT INFORMATION (continued) 3 ms
Texas Instruments
Original
T0250 TGS 810 T0-2-49 0x00000F1 S0263-01

B0237

Abstract: /fPCLK 1.5/fPCLK 0.55 0.58 10 2 µs ms µs s MHz UNIT tpd(L) tH × fCLK0 tGS tpwrup tpwrdn 0.5 11 , to disregard short input pulses. tGS is the duration of either a high-to-low or low-to-high , VOD CLK­, Dx­ VOCM R2 = 49.9 W VOCM VDx­ or VCLK­ 975 mV (Nom) 825 mV (Nom) CLK+, Dx , Output Pulse Position Measurement TXEN VDD/2 tGS PCLK VCO Internal Signal PLL Approaches , INFORMATION (continued) 3 ms Glitch Shorter Than tGS Will Be Ignored TXEN tpwrup CLK+ tGS tGS tpwrdn
Texas Instruments
Original
Abstract: Output CLK duty cycle tGS TXEN glitch suppression pulse duration (3) VIH = VDD, VIL = GND, TXEN , glitch-suppression circuitry to disregard short input pulses. tGS is the duration of either a high-to-low or , CLK+, Dx+ 975 mV (Nom) VDxâ'" or VCLKâ'" 825 mV (Nom) VOD VOCM CLKâ'", Dxâ'" VOCM , -01 Figure 11. tSK(0) SubLVDS Output Pulse Position Measurement TXEN VDD/2 tGS PCLK VCO Internal , PARAMETER MEASUREMENT INFORMATION (continued) 3 ms Texas Instruments
Original
Abstract: Figure 9. Longitudinal Impedance 0.01 µF 600 50 VS 0.01 µF 82.5 TIP 1 6, 7 L7591 4 BASIC TEST CIRCUIT V BAT 2 TIP XMT BASIC TEST CIRCUIT + 600 VT/R 2.15 µF 82.5 RING ­ HP , G P / R TGS 1 RTGP | RTGS - · -+ -201.2 , TGP - 2 - R TGP | R TGS + -· · = C TG R TGP + R TGS 201.2 C N1 ( R N1 + R N2 , = - CG RTGP 3168 TGS ( 3168 ) R - ­1 RN1 = RN2 - -2R P R Agere Systems
Original
L9218A/G L9218 L9219 L9217 L9218A L9218G

L7591

Abstract: L9217 Impedance Figure 7. Longitudinal Balance 0.01 µF 82.5 TIP 600 50 VS 1 6, 7 0.01 µF L7591 2.15 µF 4 XMT TIP 2 BASIC TEST CIRCUIT V BAT + 600 RING 82.5 VT/R , RGP R T2 = RRCV RN2 7.86 R T G P / R TGS 1 - · , - - R TGP | R TGS + - · , ) 2 C TG R TGP + R TGS 201.2 R T3 R N1 R T3 1 + - + - 1 + -
Agere Systems
Original
LUCL9218GAR-DT 30L-15P-BA DS01-034ALC DS00-186ALC

K2799

Abstract: L7591 Impedance 82.5 TIP 600 50 VS 1 6, 7 0.01 µF L7591 2.15 µF 4 2 VBAT + 600 RING VT/R ­ 82.5 HP XMT TIP BASIC TEST CIRCUIT BASIC TEST CIRCUIT RCV RING , 7.86 R T G P / R TGS 1 - · - + - RTGP , TGP | R TGS + - · - · - ­ - C TG R TGP + R TGS CT T3 T3 201.2 C N1 ( R N1 + R N2 ) 2 R R N1
Agere Systems
Original
K2799 L9219A L9219G L9219A/G LUCL9219AAR-DT LUCL9219GAR-D LUCL9219GAR-DT DS02-040ALC DS01-033ALC
Abstract: ) Figure 7. Longitudinal Balance Figure 9. Longitudinal Impedance 0.01 µF 600 50 VS 0.01 µF 82.5 , µF 82.5 RING ­ RING RCV VS HP® 4935A TIMS VS = 0.5 Vrms 30% AM 1 kHz MODULATION, f , R T3 R N 1 RT3 - + - 1 + - 1 + -RGP RRCV RN2 7.86 R T G P / R TGS 1 RTGP , -1 1 - R TGP | R TGS + - ­ - · · = - CT C TG R TGP + R TGS 201.2 C N1 ( R N1 + R N2 ) 2 R R N1 T3 R T3 1 + - + - 1 + - R Agere Systems
Original
LUCL9218AAR-DT LUCL9218GAR-D DS01-318ALC

L7591

Abstract: L9217 82.5 TIP 600 50 VS 1 6, 7 0.01 µF L7591 4 2.15 µF 2 VBAT + 600 VT/R RING 82.5 ­ HP ® 4935A TIMS XMT TIP BASIC TEST CIRCUIT BASIC TEST CIRCUIT RCV
Agere Systems
Original
2797-F 4935A L9217A L9217G T7504 L9217A/G L9218/ LUCL9217AAR-D LUCL9217GAR-DT LUCL9217GAR-D DS02-038ALC

low cost airflow sensing

Abstract: L7591 Balance 0.01 µF Figure 9. Longitudinal Impedance 82.5 TIP 600 50 VS 1 6, 7 0.01 µF L7591 2.15 µF 4 2 + 600 VT/R RING 82.5 HP ® 4935A TIMS VS = 0.5 , RGP R T2 = RRCV RN2 7.86 R T G P / R TGS 1 - · , - - R TGP | R TGS + - · - · - ­ - C TG R TGP + R TGS
Agere Systems
Original
low cost airflow sensing DS02-039ALC
Showing first 20 results.