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OMAP3503DCUSA Texas Instruments Applications Processor 423-FCBGA -40 to 105 visit Texas Instruments

TEG 105

Catalog Datasheet MFG & Type PDF Document Tags

EIAJ ED-4701-1

Abstract: EIAJ ED-4701-1 C-111A % 105 104 103 n=2.0 102 101 103 104 105 (Vp) (Pa) 106 2.8 100,000 :TEG , ] () 2.11 N = AT A : : N : = 7.5 =5.0 107 :TEG :1% 106 105 2.6 , [3] 1. 1.1 1.1 TEG (Test Element Group) TEG DAT , ; () () TEG Al TDDB MOS 3-2 TEG TEG [3] 1.3 (TEG;Test Element Group) TEG 1.3.1 TEG TEG 1.2 TEG TEG TEG 4 1 DAT (Design Approval Test) 1.2 TEG
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EIAJ ED-4701 305

Abstract: MIL-M-38510F ) n : A : 106 : TEG : 1% 105 104 103 n = 2.0 102 101 103 2.8 104 105 (Vp) (Pa) 106 100,000 : TEG : 10% (h) 10,000 2.4.2 1,000 100 , ] () 2.11 N = AT A : : N : = 7.5 = 5.0 107 :TEG :1% 106 105 2.6 , ] 1. 1.1 1.1 TEG (Test Element Group) TEG DAT , ) 1.1 (Al,CU) TEG TEG (TDDB ) MOS (HCI) (NBTI
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TEG2422

Abstract: TEG 105 DC/DC-Converter TEG Series 3 Watt · Wide input voltage ranges · Regulated outputs · High , /DC-Wandler The TEG series are high performance 3W DC/DC converters for space critical applications in , . TEG Serie 3 Watt · Grosse Eingangsspannungsbereiche · Regulierte Ausgänge · Hoher Wirkungsgrad, 80 , years warranty Models / Modelle Order code Bestellnummer S N EW DEL O M Die TEG , >1Mio. Std. TEG 0510 TEG 0511 TEG 0512 TEG 0522 TEG 0523 TEG 1210 TEG 1211 TEG 1212 TEG 1222
Traco Electronic
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sim 900

Abstract: 1595 SIM/UIM TEG Series SIM 1.75mm SMT PC DC15V 1A AC500Vr.m.s. 1 DC500V 100M 70m 5,000 -40 +85 RoHS / Compliant Compliant Ni Au Ni 100113 Ni Au Ni Au LCP UL94V-0 TEG Series , ) (22.50) SIM 0.30 1.05 No.7 SIM (6.74) 16.24 (17.00) No.6 (42.50) (1.10) 2.00 , 2 TEG Series mm (50) (45) (150) (380) 400mm 8 160mm
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sim 900 1595 AC500V

TEG 105

Abstract: 600F 10 11 12 13 14 J D E607MSEC (»35.040) Code less 2-teg brackets BN No brackets (»51 ,( 1 )6 3 .5 ) Code less 3-teg brackets 2-teg brackets BB BN No brackets Mouting bracket Case dia code , 10 10 8 5 4 3 Case size ÿ (mm) 35 Weight L (mm) 85 105 135 105 135 135 150 150 (g) 130
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TEG 105 600F 2002/95/EC 4000F

lcd 3902

Abstract: 184G100 67 VCC 4362 -420 105 G21 3902.5 415 30 TEG -1788 -420 68 VCC , VEE VOFF 6 6 6 Long-side Input PAD 40 TEG CPV VDD 10 2 U/D 2 2 Short-side PAD 65 65 VSS OE3 OE2 OE1 TEG 2 2 2 2 VSS 10 VCC 6 VGG 6 , 13 VOFF -3908 -420 51 TEG 2217 -420 89 G5 4934.5 415 14 VOFF -3823 -420 52 TEG 2357 -420 90 G6 4870 415 15 VOFF -3738 -420
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JBT6L78-AS lcd 3902 184G100 G100 G101 G102 G103 JBT6L78

g147

Abstract: teg 128 29 TEG -1928 -420 67 VCC 4362 -420 105 G21 3902.5 415 30 TEG , Short-side PAD 65 65 VSS OE3 OE2 OE1 TEG 2 2 2 2 VSS VCC VGG 6 6 6 10 Alignment mark Alignment mark 100 Pattern prohibited 50 80 90 TEG CPV VDD , 88 G4 4999 415 13 VOFF -3908 -420 51 TEG 2217 -420 89 G5 4934.5 415 14 VOFF -3823 -420 52 TEG 2357 -420 90 G6 4870 415
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g147 teg 128 G104 G160 g161

a3568

Abstract: G20 3967 415 29 TEG â'1928 â'420 67 VCC 4362 â'420 105 G21 , VSS OE3 OE2 OE1 TEG 2 2 2 2 VSS VCC VGG 6 6 6 10 Alignment mark ◠Alignment mark 100 Pattern prohibited 50 80 90 TEG CPV VDD 90 30 30 30 , TEST2 1932 â'420 88 G4 4999 415 13 VOFF â'3908 â'420 51 TEG 2217 â'420 89 G5 4934.5 415 14 VOFF â'3823 â'420 52 TEG 2357
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a3568

EQFN12-E2

Abstract: H12 SOT23 TEG 3 3 [] (VF) VF K K= Tj VF K [/mV] Tj = THi - TLo , VH × IH [] VF = VF 0 - VFSS [] VH TEG IH TEG Ver.2010-10-22 -4- [ Pd] IC , 130 200 110 105 180 140 155 110 235 195 195 150 90 80 160 120 155 135 200 105 240 , 160 160 155 155 210 155 210 180 160 140 85 150 70 75 125 95 105 70 175 150 150 120 60 55 50 85 125 105 130 40 140 140 130 115 115 115 115 4 Tj:125 jt Pd (mW
New Japan Radio
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SC88A SC82AB EQFN12-E2 H12 SOT23 TVSP10 VSP10 EIA/JESD51-3/-5/-7 JESD51-5 SC88ASC82AB

g143

Abstract: × 11.51 (mm) Chip center (0,0) DUMMY DUMMY DUMMY DUMMY VGG Alignment mark VEE VOFF VDD TEG CPV VDD U/D VSS OE3 OE2 OE1 TEG VSS VCC VGG Alignment mark DUMMY DUMMY DUMMY DUMMY 6 6 6 6 , VEE VEE VOFF VOFF VOFF VOFF VOFF VOFF VDD VDD VDD VDD VDD VDD TEG TEG TEG TEG TEG TEG TEG TEG TEG TEG , OE1 TEST1 TEST2 TEG TEG TEG TEG TEG TEG TEG TEG VSS VSS VSS VSS VSS VSS VCC VCC VCC VCC VCC VCC VGG , 105 106 107 108 109 110 111 112 113 114 Name DUMMY DUMMY DUMMY DUMMY DUMMY DUMMY DI/O DI/O G1 G2 G3 G4
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g143

TSSOP54

Abstract: tssop-54 TEG 3 3 [] (VF) VF K K= Tj VF K [/mV] Tj = THi - TLo , VH × IH [] VF = VF 0 - VFSS [] VH TEG IH TEG Ver.2010-05-07 -4- [ Pd] IC , 130 200 110 105 180 140 155 110 235 195 195 150 90 80 160 120 155 135 200 105 240 , 160 160 155 155 210 155 210 180 160 140 85 150 70 75 125 95 105 70 175 150 150 120 60 55 50 85 125 105 130 40 140 140 130 115 115 115 115 4 Tj:125 jt Pd (mW
New Japan Radio
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TSSOP54 tssop-54 Test-Element-Group 890 sot236 HSOP-8 TSSOP54-N1

TRANSISTOR A104b

Abstract: TRANSISTOR A107 sample:TEG Defect rate: 10% time 108 Life time (Hours) 107 106 105 104 103 102 , : TEG Defect percentage:1% 105 104 103 n = 2.0 102 101 103 104 105 Water Vapor Pressure , coefficients. 107 Sample: TEG Defect percentage: 1% per cycle Number of Temperature Cycles 106 105 , mechanisms must begin in the development phase, dividing products into different test element groups (TEG), such as process TEG and design TEG. To verify product reliability, various life time and environment
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TRANSISTOR A104b TRANSISTOR A107 EIAJ ED-4701 305 smd transistor AIT water pumping machine control schematic electromigration calculation for TTL C/100

d65641gd

Abstract: D65801GD for high-temperature stress is given as the following: A(T) = e (2) L= Where: L 2 105 , . = 90% 2 k Boltzmann's constant = 8.62 x 10-5 eV/K 0 n Tj2 Junction temperature (in , . Since L is already expressed as %/1000 hours (10-5 failure/hr), an easy conversion from %/1000 hours , ) 150°C 125°C 1178 771 1.936106 1.18106 0 0 53.2 22.5 TEG (44-pin QFP) Oct 91­Dec 96 150°C 24 4.80104 0 53.2 TEG (160-pin QFP) Oct 91­Dec 96 150°C 208
NEC
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d65641gd D65801GD D65656 D65806 D65808 D65640GC TRQ-99-10-335

ZIP40

Abstract: 514190 - ti m IN TEG RA TED CIRCUIT TOSHIBA TeCHN ICAL data TOSHIBA MOS DIGITAL INTEGRATED , . 1991.) IN TEG R A T ED CIRCU IT TOSHIBA T EC H N IC A L D ATA TC514190BJ / BZ - 70 , TC514190BJ/BZ - 2 i q q i -08-01 T O S H IB A C O R PO R A TIO N IN TEG R A T ED CIRCU IT TOSHIBA , IB A CO RPO RA TIO N IN TEG R A T ED CIRCU IT TOSHIBA T EC H N IC A L D ATA , ) TCS14190BJ/BZ - 4 i q g i -08-01 T O S H IB A CO R PO R A TIO N IN TEG R A T ED CIRCU IT TOSHIBA
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ZIP40 514190 514190BJ/BZ-80 TC514190BJZBZ TC514190BJ/8Z TC514190B TC51419 ZIP40-

THOMSON-CSF division tube electroniques

Abstract: th354 ) Typical Operation Peak-of-sync video power (Note 2). 10.5 kW Sound power. 1.05 kW Frequency , , measured under the same conditions, equal to or less than â'" 70 dB. -2- TEG 2409 - TH 354 OPERATING , (A) _ Screen-grid current (mA) Control-grid current (A> TEG 2409 - TH 354 DETAILS OF ELECTRODE , mm. w -eg- -5- ts THOMSON-CSF DIVISION TUBES ELECTRONIQUES outline drawing Dimensions in mm. -6- TEG
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THOMSON-CSF division tube electroniques th354 THOMSON-CSF RELAYS ELECTRONIQUES combined video Thomson-CSF amplifier

LQFP256

Abstract: ic 313 ) 3+OHAlO2+ 2H2O 3.15 TEG LSI PSG Cathodic Corrosion (SiN ) 4.0 3.0 2.0 1.0 0.7 TEG 0.5 0.3 0.2 LSI 0.1 0 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 , () () 2-38 [2] 3.7 3.7.1 (1) Al Cl- Al 14) MOS 3.20 TEG v , Rr Al 3.20 2-39 [2] 3.21 Al Al 105 104 85°C /85% BT PCT BT , 3.24 0.1 0.2 0.3 (%) 0.4 (2) Al 26) TEG 3.1 i = R i = 6=1
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LQFP256 ic 313 igfet 352AL 80C90 CCD SMD NS-15

teg generate

Abstract: tro l th e critical reference in teg ratio n period. R eference tim ing is derived from an ex tern al , Input Resistors R e s is ta n c e T e m p e ra tu re C o e f f ic ie n t |T c)'2' IN TEG R ATO R O P AM , ±50 100 100 80 -7 .5 -0 .2 14 120 105 ± 1 000 ±25 ± 1 00 200 * * +0.1 +12 * * * * ±25 50 , d 4.90 10 0.015 2 5.0 ±60 5.10 ± 105 4.9 5 · « * * % /V n · ±40 5.05 ±55 V p p m /° C out 4.0 , current to flow in C in t - This forces the in teg rato r o u tp u t to ram p negatively. W hen the o u
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teg generate VFC101 VFC10I VFC100 VFC101N

41RB

Abstract: IN TEG RA TED CIRCUIT DATA TO SH IBA M O S DIGITAL INTEGRATED CIRCUIT TC5816 AFT SILICON , rities (as o f 199 ) TC5816AFT-1 19 9 6 -0 8 -1 9 T O S H IB A CORPORATION IN TEG RA TED , - 2 1996-08-19 T O S H IB A CORPORATION IN TEG RA TED CIRCUIT DATA TOSHIBA TC5816 AFT , CORPORATION IN TEG RA TED CIRCUIT DATA TOSHIBA TC5816 AFT TECHNICAL AC CHARACTERISTICS A N , & CL (100 pF) TC5816AFT-4 1996-08-19 T O S H IB A CORPORATION IN TEG RA TED CIRCUIT
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41RB TC5816AFT TC5816AFT--

TC5816

Abstract: IN TEG RA TED CIRCUIT DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 ADC SILICON GATE , ) TC5816ADC-1 1996-08-19 T O S H IB A CORPORATION IN TEG RA TED CIRCUIT DATA TOSHIBA TC5816 ADC , -2 1996-08-19 T O S H IB A CORPORATION IN TEG RA TED CIRCUIT DATA TOSHIBA TC5816 ADC TECHNICAL , (R/B) V V mA TC5816ADC-3 1996-08-19 T O S H IB A CORPORATION IN TEG RA TED CIRCUIT , (100 pF) TC5816ADC-4 1996-08-19 T O S H IB A CORPORATION IN TEG RA TED CIRCUIT DATA
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TC5816ADC TC5816ADC--35 TC5816ADC--36 TC5816ADC--37 FDC-22 TC5816ADC--38
Abstract: IN TEG RA TED TO SHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT , 199 ) TC5816AFTâ'"1 19 9 6 -0 8 -1 9 TOSHIBA CORPORATION IN TEG RA TED TO SHIBA CIRCUIT , IN TEG RA TED TO SHIBA CIRCUIT TECHNICAL TC5816 AFT DATA VALID BLOCK (1) TC5816 , - mA 1, uS TC5816AFTâ'" 3 1996-08-19 TOSHIBA CORPORATION IN TEG RA TED TO SHIBA , CL (100 pF) TC5816AFTâ'"4 1996-08-19 TOSHIBA CORPORATION IN TEG RA TED TO SHIBA CIRCUIT -
OCR Scan
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