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TC116

Catalog Datasheet MFG & Type PDF Document Tags

FRH20A10

Abstract: FCH20A20 FRH20A20 =118 Tc=104 Tc=122 Tc=121 Tc=123 Tc=133 Tc=126 Tc=131 Tc=117 Tc=130 Tc=127 Tc=127 Tc=127 Tc=99 Tc=116 Tc=116 Tc=129 Tc=116 Tc=116 100 100 100 100 120 120 120 110 120 120 120 100 180 180 180 150 180 180 , 15A*2 15A*2 15A*2 15A*2 15A*2 15A*2 Tc=116 Tc=129 Tc=116 Tc=116 Tc=108 Tc=128 Tc=121 Tc=121 Tc , 60 60 100 150 5A*2 5A*2 5A*2 5A*2 5A*2 5A*2 5A*2 Tc=116 Tc=129 Tc=116 Tc=108 Tc=128 Tc=121 Tc=121 120
Nihon Inter Electronics
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FRH20A10 FCH20A20 FRH20A20 TC116 Schottky Diodes 5A TC108 tc122 25 FSH04A03LB FSH04A04B FSH04A06B FSH04A10B FSQ05A03LB FSQ05A04B

FCH20U10

Abstract: niec FCHS10A12 =122 Tc=116 Tc=118 Tc=111 Tc=123 Tc=107 Tc=95 Tc=89 80 100 100 80 80 80 80 70 60 0.98 , 5A×2 5A×2 R 5A×2 5A×2 Tc=120 Tc=117 Tc=117 Tc=116 Tc=118 100 80 80 100 100 1.00 , 5A×2 5A×2 5A×2 Tc=117 Tc=116 Tc=109 Tc=112 Tc=104 Tc=99 Tc=84 Tc=77 80 100 100 80 80 , 100 200 3A×2 3A×2 3A×2 3A×2 3A×2 3A×2 Tc=111 Tc=70 Tc=118 Tc=104 Tc=122 Tc=116 45 , =70 Tc=111 Tc=118 Tc=104 Tc=122 Tc=116 45 45 45 45 45 60 0.47 0.45 0.55 0.58 0.85
Nihon Inter Electronics
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FCH20U10 niec FCHS10A12 FCQ10U06 FCU10UC30 FCU20A40 FSF05B60 B1922 B2733 10EDA10 10EDA20 10EDA40 10EDA60

diode 40amp

Abstract: DF40AA120 DIODE(THREE PHASES BRIDGE TYPE) DF40AA120/160 UL;E76102 M Power Diode Module DF40AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction output DC current is 40Amp (Tc=116) Repetitive peak reverse voltage is up to 1,600V , wave. TC116 IFSM Surge Forward Current 1 cycle, 50/60HZ, peak value, non-repetitive Tj
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DF40AA120 DF40AA160 diode 40amp IFM40A

DF40AA120

Abstract: DF40AA160 DIODE(THREE PHASES BRIDGE TYPE) DF40AA120/160 UL;E76102 M Power Diode Module DF40AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction output DC current is 40Amp (Tc=116) Repetitive peak reverse voltage is up to 1,600V , wave. TC116 IFSM Surge Forward Current 1 cycle, 50/60HZ, peak value, non-repetitive Tj
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PWB80A30

Abstract: PWB80A40 Current Single phase, half wave, 180° conduction, Tc116 80 A R.M.S. On-State Current Single phase, half wave, 180° conduction, Tc116 125 A Surge On-State Current 1 cycle, 2
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Original
PWB80A PWB80A30 PWB80A40 Tj-150 6-110TAB

schottky barrier diode b22

Abstract: FCH20U10 =122 Tc=116 Tc=118 Tc=111 Tc=123 Tc=107 Tc=95 Tc=89 80 100 100 80 80 80 80 70 60 0.98 , 5A×2 5A×2 R 5A×2 5A×2 Tc=120 Tc=117 Tc=117 Tc=116 Tc=118 100 80 80 100 100 1.00 , 5A×2 5A×2 5A×2 Tc=117 Tc=116 Tc=109 Tc=112 Tc=104 Tc=99 Tc=84 Tc=77 80 100 100 80 80 , 100 200 3A×2 3A×2 3A×2 3A×2 3A×2 3A×2 Tc=111 Tc=70 Tc=118 Tc=104 Tc=122 Tc=116 45 , =70 Tc=111 Tc=118 Tc=104 Tc=122 Tc=116 45 45 45 45 45 60 0.47 0.45 0.55 0.58 0.85
Nihon Inter Electronics
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schottky barrier diode b22 Schottky Diode B29 10ERB20 FCQS10A065 EC30QSA045 FCHS10A12 10EDB10 10EDB20 10EDB40 KCQ60A03L KCH60A03L KCQ60A04

tc122 20 5 3

Abstract: tc 122 25 5 =129 Tc=122 Tc=130 Tc=129 Tc=111 Tc=70 Tc=118 Tc=104 Tc=122 Tc=122 Tc=116 40 40 40 40 45 45 45 45 45 , =122 Tc=130 Tc=129 Tc=70 Tc=111 Tc=118 Tc=104 Tc=122 Tc=122 Tc=116 Tc=106 Tc=105 20 20 20 20 40 , *2 15A*2 15A*2 15A*2 Continued from the preceding page Tc=116 Tc=108 Tc=122 Tc=121 Tc=119 Tc
Nihon Inter Electronics
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tc122 20 5 3 tc 122 25 5 tc122 TC-138 tc122 25 4 EA20QS04 EA20QS06 EA20QS09 EA20QS10 ESL03B03 EA30QS03L

FCU20A40

Abstract: FSU05B60 200 400 600 600 5 5 5 5 5 5 5 5 10 10 10 10 10 10 10 10 15 15 15 15 Tc=122 Tc=122 Tc=116 Tc , =100 Tc=95 Tc=74 Tc=123 Tc=118 Tc=110 Tc=117 Tc=117 Tc=116 Tc=109 80 80 80 120 120 120 60 60 60 80
Nihon Inter Electronics
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FSU05A40 FSU05A60 FSU05B60 FSU15A40 FSU20B60 FCU20A20 Tc117 tc112 FSF05A20 FSU05A20 FSU05A30 FSF05A40 FSF05A60

TL130

Abstract: tc122 25 8 4 Tl=25 5.0 Tc=110 5.0 Tc=122 5.0 Tc=122 5.0 Tc=127 5.0 Tc=116 10 Tc=130 10 Tc , Tc=127 6.0 Tc=122 7.0 Tc=89 7.0 Tc=89 8.0 Tc=103 10 Tc=116 10 Tc=123 10 Tc=109 10 Tc=116 10 Tc=123 10 Tc=109 10 Tc=116 10 Tc=123 10 Tc=125 10 Tc=110 10 Tc=118 10 Tc=102 10 Tc
Fuji Electric
Original
ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 TL130 tc122 25 8 4 yg802c10 SD883-04 SD833-04 TC8520

PWB80A30

Abstract: PWB80A40 Current Single phase, half wave, 180° conduction, Tc116 80 A R.M.S. On-State Current Single phase, half wave, 180° conduction, Tc116 125 A Surge On-State Current 1 cycle, 2
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yg802c10

Abstract: YG803C04 =110 5.0 Tc=122 5.0 Tc=122 5.0 Tc=127 5.0 Tc=116 10 Tc=130 10 Tc=124 15 Tc=100 15 Tc , =117 6.0 Tc=127 6.0 Tc=122 7.0 Tc=89 7.0 Tc=89 8.0 Tc=103 10 Tc=116 10 Tc=123 10 Tc=109 10 Tc=116 10 Tc=123 10 Tc=109 10 Tc=116 10 Tc=123 10 Tc=125 10 Tc=110 10 Tc=118 10
Fuji Electric
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YG838C04R YG803C04 YG803C06 TL1115 YG835C04 YG811S04 tc-118 sd TS805C04 TS805C06 TP805C04 ESAC83-004 ESAC83M-004R ESAC83M-006R

gchs20a08

Abstract: 20A Avg. 80 Volts SBD Maximum Ratings Item OUTLINE DRAWING(mm) Symbol Repetitive Peak Reverse Voltage Average Rectified Forward Current R.M.S. Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Mounting torque V RRM IO Conditions I FSM T jw T stg F tor Unit 80 V 50Hz 50Hz Full Sine Wave Resistive Load I F(RMS) Tc=116 V RM
Nihon Inter Electronics
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gchs20a08 GCHS20A08 IFM10A

IF-10A

Abstract: YG902C2R / Rectifier Diodes LowLoss Fast Recovery Diodes LLD 1 in onepackage Device type SMD Maximum rating VRRM IF(AV) 1 Volts Amps. 200 200 400 200 SMD 200 200 400 200 200 200 200 200 300 200 600 0.5 Ta=60 1.0 Ta=50 1.0 Tl=129 1.0 Ta=25 1.0 Ta=25 1.5 Ta=40 2 Tl=97 3.0 Ta=25 5 Tc=106 5 Tc=106 5 Tc=125 5 Tc=134 5 Tc=128 10 Tc=116 Thermal rating IFSM2 Tj and , Tc=116 12 Tc=104 20 Tc=112 20 Tc=105 20 Tc=102 20 Tc=115 20 Tc=110 20 Tc=108 20 Tc
Fuji Electric
Original
YG902C2R IF-10A ERA91-02 ERB91-02 CB903-4 ERA92-02 SC902-2 ERB93-02

SMD F2A

Abstract: yg962s6 =25 1.5 Ta=40 2 Tl=97 3.0 Ta=25 5 Tc=106 5 Tc=106 5 Tc=125 5 Tc=134 5 Tc=128 10 Tc=116 10 Tc , 12 Tc=115 60 12 Tc=116 60 12 Tc=104 50 20 Tc=112 80 20 Tc=105 80 20 Tc=102 80 20 Tc=115 100 20
Fuji Electric
Original
CB903-4S ERC91-02 KS926S2 YG911S2R SMD F2A yg962s6 220F KP926S2 ERC90-02

TCU10A20

Abstract: 10A Avg. 200 Volts FRED TCU10A20 Maximum Ratings Item Symbol Repetitive Peak Reverse Voltage Average Rectified Forward Current R.M.S. Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range OUTLINE DRAWING(mm) V RRM IO Conditions 200 V 50Hz 50Hz Full Sine Wave Resistive Load I F(RMS) I FSM Unit Tc116 10 A 11.1 A 50Hz 50Hz Full
Nihon Inter Electronics
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Abstract: VRRM VRSM I O IF(RMS) IFSM Tjw Tstg Ftor 120 10 FCQ10A04 40 45 50 Hz Tc=116 Full Sine Nihon Inter Electronics
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diode 40amp

Abstract: DF40AA DIODE(THREE PHASES BRIDGE TYPE) DF40AA120/160 UL;E76102 M Power Diode Module DF40AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction output DC current is 40Amp (Tc=116 ) Repetitive peak reverse voltage is up to 1,600V. TjMax=150 Isolated Mounting Base High reliability by unique glass passivation Applications
SanRex
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40Amp

fchs20u08

Abstract: 20A Avg. 80 Volts SBD Maximum Ratings Item OUTLINE DRAWING(mm) Symbol Repetitive Peak Reverse Voltage Average Rectified Forward Current R.M.S. Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Mounting torque V RRM IO Conditions I FSM T jw T stg F tor Unit 80 V 50Hz 50Hz Full Sine Wave Resistive Load I F(RMS) Tc=116 V RM
Nihon Inter Electronics
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fchs20u08 FCHS20U08 IFM10

fchs20a08

Abstract: 20A Avg. Item Repetitive Peak Reverse Voltage Average Rectified Forward Current R.M.S. Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Mounting torque 80 Volts Symbol V RRM IO I F(RMS) I FSM T jw T stg F tor 180 50Hz 50Hz Full Sine Wave Resistive Load SBD Conditions 80 Tc=116 V =40V RM FCHS20A08 OUTLINE DRAWING(mm) Unit V 20 A A A 0.5 Nm Maximum Ratings 22.2 50Hz 50Hz Full Sine
Nihon Inter Electronics
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thyristor 200A

Abstract: PFT2014N ° Half Sine Wave Max. Rated Value Tc116 I2t 10ms A A 5000 A 125000 50Hz Half
Nihon Inter Electronics
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PFT2014N thyristor 200A PFT2014 150VRM 25ITM 150VDM 125VD

PWB80A30

Abstract: PWB80A40 DIODE(THREE PHASES BRIDGE TYPE) DF40AA120/160 UL;E76102 M Power Diode Module DF40AA is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction output DC current is 40Amp (Tc=116) Repetitive peak reverse voltage is up to 1,600V , wave. TC116 IFSM Surge Forward Current 1 cycle, 50/60HZ, peak value, non-repetitive Tj
SanRex
Original
Abstract: Tl=25 5.0 Tc=110 5.0 Tc=122 5.0 Tc=122 5.0 Tc=127 5.0 Tc=116 10 Tc=130 10 Tc , Tc=127 6.0 Tc=122 7.0 Tc=89 7.0 Tc=89 8.0 Tc=103 10 Tc=116 10 Tc=123 10 Tc=109 10 Tc=116 10 Tc=123 10 Tc=109 10 Tc=116 10 Tc=123 10 Tc=125 10 Tc=110 10 Tc=118 10 Tc=102 10 Tc -
Original

YA868C15

Abstract: ya868c12 / Rectifier Diodes LowLoss Fast Recovery Diodes LLD 1 in onepackage Device type SMD Maximum rating VRRM IF(AV) 1 Volts Amps. 200 200 400 200 SMD 200 200 400 200 200 200 200 200 300 200 600 0.5 Ta=60 1.0 Ta=50 1.0 Tl=129 1.0 Ta=25 1.0 Ta=25 1.5 Ta=40 2 Tl=97 3.0 Ta=25 5 Tc=106 5 Tc=106 5 Tc=125 5 Tc=134 5 Tc=128 10 Tc=116 Thermal rating IFSM2 Tj and , Tc=116 12 Tc=104 20 Tc=112 20 Tc=105 20 Tc=102 20 Tc=115 20 Tc=110 20 Tc=108 20 Tc
Fuji Electric
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YG862C12R YA865C12R YG975C6R YA868C15 ya868c12 YG972S6 yg862c15 yg865c15 YA862C12R TS862C12R YG865C1 YA961S6R
Abstract: 20A Avg. Item Repetitive Peak Reverse Voltage Average Rectified Forward Current R.M.S. Forward Current Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Mounting torque 80 Volts Symbol V RRM IO I F(RMS) I FSM T jw T stg F tor 180 50Hz 50Hz Full Sine Wave Resistive Load SBD Conditions 80 Tc=116 V =40V RM FCHS20A08 OUTLINE DRAWING(mm) Unit V 20 A A A 0.5 Nm Maximum Ratings 22.2 50Hz 50Hz Full Sine Nihon Inter Electronics
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GCQ10A04
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