500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : BK/ATC-30ID Supplier : Eaton Manufacturer : Avnet Stock : - Best Price : $2.2363 Price Each : $2.5143
Part : BP/ATC-30ID Supplier : Eaton Manufacturer : Avnet Stock : - Best Price : $4.6633 Price Each : $5.2429
Part : VP/ATC-30ID Supplier : Eaton Manufacturer : Avnet Stock : - Best Price : $22.3253 Price Each : $25.10
Part : BK/ATC-30ID Supplier : EATON Manufacturer : Heilind Electronics Stock : 100 Best Price : $2.9239 Price Each : $3.4204
Part : APR-I-30A(CROSS: ATC-30ID) Supplier : OptiFuse Manufacturer : Bristol Electronics Stock : 20,000 Best Price : - Price Each : -
Part : BK/ATC-30ID Supplier : EATON Manufacturer : Interstate Connecting Components Stock : 100 Best Price : $100.00 Price Each : $100.00
Part : BK/ATC-30ID Supplier : EATON Manufacturer : Sager Stock : - Best Price : $2.38 Price Each : $2.64
Part : BP/ATC-30ID Supplier : EATON Manufacturer : Sager Stock : - Best Price : $5.13 Price Each : $5.75
Part : VP/ATC-30ID Supplier : EATON Manufacturer : Sager Stock : - Best Price : $23.80 Price Each : $26.36
Shipping cost not included. Currency conversions are estimated. 

TC 30i

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: voltage 600 600 20 V V A 100 A 150 ï'­55 to ï'«150 ï'°C ï'°C Tc=30ï'°C 60Hz , epitaxial planer Absolute maximum ratings (Tc=25ï'°C) Parameter Symbol Repetitive peak reverse , www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 30 60 90 120 CASE TEMPARATURE : Tc(ï'°C ROHM
Original
RFUS20TF6S R1120A
Abstract: Tc=30ï'°C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 ï'°C 60Hz half sin wave , Construction Silicon epitaxial planer Absolute maximum ratings (Tc=25ï'°C) Parameter Symbol , 30 60 90 120 CASE TEMPARATURE : Tc(ï'°C) Derating Curve"(Io-Tc) 3/3 150 2011.06 - Rev.A ROHM
Original
AEC-Q101 RFUS20TF6SFH
Abstract: 600 600 20 V V A 100 A 150 ï'­55 to ï'«150 ï'°C ï'°C Tc=30ï'°C 60Hz half sin , planer Absolute maximum ratings (Tc=25ï'°C) Parameter Symbol Repetitive peak reverse voltage , . 0 30 60 90 120 CASE TEMPARATURE : Tc(ï'°C) Derating Curve"(Io-Tc) 3/3 150 2011.06 - ROHM
Original
Abstract: (Rated power) Physical Specifications Dimensions Typical TC =30ï'°C TPCB=42ï'°C TC =54ï'°C TPCB=71ï'°C TC =80ï'°C TPCB=106ï'°C Notes / Conditions 1kHz, Single-channel driven International Rectifier
Original
transistor SMD R4d IRS2093M IRF6665
Abstract: Parameter 600 V IC @ TC = 25°C Continuous Collector Current 24 IC @ TC = 100°C ICM , Current, VGE = 20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C IFM Diode , TC = 25°C Maximum Power Dissipation 42 PD @ TC = 100°C Maximum Power Dissipation 17 , 30μs Collector-to-Emitter Leakage Current â'" 1.0 30 μA VGE = 0V, VCE = 600V â , ¼sec 1 1msec 10 0.1 DC Tc = 25°C Tj = 150°C Single Pulse 1 0.01 1 10 100 International Rectifier
Original
irg7ic IRG7IC30FDPBF IRG7IC30FDP
Abstract: Analog Power AM40N10-30I N-Channel 100-V (D-S) MOSFET Key Features: â'¢ Low rDS(on) trench , Voltage ±20 a TC=25°C ID 31.0 Continuous Drain Current IDM Pulsed Drain Current b 80 a TC=25°C IS 40 Continuous Source Current (Diode Conduction) a TC=25°C PD 50 Power Dissipation TJ , © Preliminary 1 Publication Order Number: DS_AM40N10-30I_1A Analog Power AM40N10-30I Electrical , © Preliminary 2 Publication Order Number: DS_AM40N10-30I_1A Analog Power AM40N10-30I Typical Analog Power
Original
Abstract: Collector-to-Emitter Voltage Parameter 600 V IC @ TC = 25°C Continuous Collector Current 24 IC @ TC = 100°C ICM Continuous Collector Current Pulse Collector Current, VGE = 15V 12 ILM Clamped Inductive Load Current, VGE = 20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC , Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 42 PD @ TC = 100 , 30μs Collector-to-Emitter Leakage Current â'" 1.0 30 μA VGE = 0V, VCE = 600V â International Rectifier
Original
Abstract: Tight Parameter Distribution Lead Free Package VCES = 1200V IC = 25A, TC = 100°C G TJ(max) = , 1200 V V CES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current 50 IC @ TC = 100°C ICM Continuous Collector Current 25 Pulse Collector Current, VGE=15V ILM Clamped Inductive Load Current, VGE=20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C d 25 IFM Diode Continous Forward Current Diode Maximum Forward Current International Rectifier
Original
IRG7PH35UD1M 1300V TD-020D
Abstract: Parameter Max. Units 1200 V V CES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current 50 IC @ TC = 100°C Continuous Collector Current 25 INOMINAL ICM Nominal Current ILM Clamped Inductive Load Current, VGE =20V IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C d 25 IFM Diode Continous Forward Current Diode Maximum Forward Current V GE Continuous Gate-to-Emitter Voltage ±30 V PD @ TC = 25°C Maximum International Rectifier
Original
IRG7PH35UD1P IRG7PH35UD1-EP F/IRG7PH35UD1-EP
Abstract: Collector E Emitter Absolute Maximum Ratings Max. Units VCES IC @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Parameter 1200 55 V IC @ TC = 100 , ±30 PD @ TC = 25°C Maximum Power Dissipation 210 PD @ TC = 100°C Maximum Power Dissipation , , PW = 30μs μA VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 175°C nA VGE =  , For both: Duty cycle : 50% Tj = 150°C Tc = 100°C Gate drive as specified Power Dissipation = International Rectifier
Original
IRG7PH35UP IRG7PH35U-EP IRFPE30 F/IRG7PH35U-EP IRGP30B120KD-E
Abstract: or VR = VRROM, TC = 100°C VT IT = 16A, TC = 25°C IGT VD = 12V (DC), RL = 30Ω, TC = 25°C VGT VD = 12V (DC), RL = 30Ω, TC = 25°C IHO TC = 25°C dv/dt VD = VDROM exponential voltage rise, TC = 100°C tgt VD = VDROM, IT = 4.5A, IT = 2A, IGT = 80mA, 0.1 Âus rise time, TC = 25°C tq VD = , VRROM VDROM IT(RMS) (TC = 75°C, θ = 180°) ITSM for one full cycle of applied principal voltage 400 , ms PGM * (for 10Âus max) PG(AV) * (averaging time = 10 ms max) Tstg TC TT During soldering for DIGITRON
Original
MIL-PRF-19500 C122F C122A C122B C122C C122D
Abstract: Typical TC =30ï'°C TPCB=37ï'°C TC =54ï'°C TPCB=67ï'°C TC =80ï'°C TPCB=106ï'°C Notes / Conditions , Two-Channel x 1/8th Rated Power (15W) in Operation, TC = 54°C at Steady State ±B supply = ±35V, 4 Load International Rectifier
Original
IRS2092S IRF6645
Abstract: Collector-to-Emitter Voltage Units 1200 h V 1300 IC @ TC = 25°C Continuous Collector Current 50 IC @ TC = 100°C Continuous Collector Current 25 INOMINAL Nominal Current ICM Pulse Collector Current, V GE=15V ILM Clamped Inductive Load Current, V GE=20V IF @ TC = 25°C Diode Continous Forward Current dg 20 150 c A 80 50 IF @ TC = 100°C Diode , Voltage ±30 V P D @ TC = 25°C Maximum Power Dissipation 179 W P D @ TC = 100 International Rectifier
Original
JESD47F
Abstract: PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL TIP32 , 1.0 40 2.0 -65 to +150 62.5 3.13 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted , =10V, IC=0.5A, f=1.0MHz 3.0 ton IC=1.0A, IB1=IB2=0.1A, RL=30Ω 0.3 toff IC=1.0A, IB1=IB2=0.1A, RL=30ΠCentral Semiconductor
Original
TIP32A TIP32B TIP32C
Abstract: PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL TIP30 , W TJ, Tstg -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted , =4.0V, IC=1.0A VCE=10V, IC=0.2A, f=1.0kHz VCE=10V, IC=0.2A, f=1.0MHz IC=1.0A, IB1= IB2=0.1A, RL=30Ω 3.0 toff IC=1.0A, IB1= IB2=0.1A, RL=30Ω mA mA mA 40 fT ton 0.3 1.0 VCE=Rated Central Semiconductor
Original
TIP30A TIP30B TIP30C
Abstract: PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL TIP31 , 1.0 40 2.0 -65 to +150 62.5 3.13 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted , =10V, IC=0.5A, f=1.0MHz 3.0 ton IC=1.0A, IB1=IB2=0.1A, RL=30Ω 0.3 toff IC=1.0A, IB1=IB2=0.1A, RL=30ΠCentral Semiconductor
Original
TIP31A TIP31B TIP31C
Abstract: (@VGS = 4.5V) 4.60 2.10 mï' ï'  Qg (typical) 10ï'  23 nC ID (@TC = 25°C) 30ï30ï'‡ A       Applications ï'ï'  Control and Synchronous MOSFETs for , Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current PD @TC = 25°C PD @TC = , Junction and Storage Temperature Range VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25 , Junction-to-Ambient ï' RJA ( International Rectifier
Original
IRFH4255DP IRFH4255DTRP J-STD-020D AN-994
Abstract: (@VGS = 4.5V) 4.60 2.10 mï' ï'  Qg (typical) 10ï'  23 nC ID (@TC = 25°C) 30ï30ï'‡ A       Applications ï'ï'  Control and Synchronous MOSFETs for , Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current PD @TC = 25°C PD @TC = , Junction and Storage Temperature Range VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25 , Junction-to-Ambient ï' RJA ( International Rectifier
Original
Abstract: ) VGES ±20 Volts Collector Current (DC, TC = 87°C)*2 IC Collector Current (Pulse, 500 Amperes Repetitive)*3 I CRM 1000 Amperes Total Power Dissipation (TC = 25°C)*2,*4 Ptot 5000 Watts Emitter Current, Freewheeling Diode Forward Current (TC = 25°C)*2,*4 IE*1 Emitter Current, Freewheeling , (FWDi). *2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting , Tj = 125°C, Inductive Load â'" 98.1 â'" mJ Internal Gate Resistance rg TC = 25 Powerex
Original
25810 CM500HA-34A
Abstract: 1.14V to 1.30V â'¢ Interface: HSUL_12 â'¢ Operating case temperature range â'" TC = ï'­30ï'°C to , Recommended DC Operating Conditions Table 2: Recommended DC Operating Conditions (TC= ï'­30ï'°C to +85ï'°C , Conditions ï'  (TC = ï'­30ï'°C to +85ï'°C, VDD1 = 1.70V to 1.95V, VDD2, VDDQ = 1.14V to 1.30V) Power , Table 3: IDD Specification Parameters and Operating Conditions (contâ'™d) ï'  (TC = ï'­30ï'°C to , Characteristics Table*6 ï'  (TC = ï'­30ï'°C to +85ï'°C, VDD1 = 1.70V to 1.95V, VDD2, VDDQ = 1.14V to 1.30V Micron Technology
Original
EDBA164B1PM 1066M E1987E30 M01E1007
Showing first 20 results.