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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

T2D DIODE 32

Catalog Datasheet MFG & Type PDF Document Tags

T2D 24 DIODE

Abstract: T2d 43 diode DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is Drain-Source Diode Forward Voltage V so 0 VGS= Reverse Recovery Time V V - , O ' O 0.8 1.8 V 2.4 3.2 4 0.4 . , Threshold Variation with Temperature. NDT455N Rev.F 34^74 OQBSnS T2D Typical Electrical , 1 2 5 0.2 0.4 0.6 0.8 1 1.2 VSD, BOOY DIODE FORWARD VOLTAGE (V) Figure
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T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 diode T2D

T2D 62 diode

Abstract: T2D 98 DIODE (puls) V GS I AR E AS Pd Tch T sta > Equivalent Circuit Rating 600 9 32 ±30 9 , ,) Turn-Off-Time W (ton=td(o +tf) iD Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time , *,=25â'˜C Forward Characteristics of Reverse Diode Typical Gate Charge Characteristic lp=f(Vso); W , notice! â  22307=12 0 0 0 4 b b 7 T2D t W paremet6r:0=t/T
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T2D 62 diode T2D 98 DIODE T2D 27 diode T2D 70 diode 2SK2645-01MR

T2D DIODE

Abstract: T2D DIODE 64 Vcc DC supply voltage -0.5 to +4.6 V l|k DC input diode current V| , output current -32 mA lOL Low-level output current 64 mA At/Av Input transition rise or fall rate , delay CP to Qn 1 1.7 1.9 3.5 3.5 5.5 5.5 6.3 5.9 ns tpHL Propagation delay MR to Qn 2 1.3 3.2 6.2 6.2 , pulse width, Low 2 3.3 1.5 3.3 ns IREC Recovery time MR to CP 2 2.7 1.0 3.2 ns AC WAVEFORMS VM = 1.5V
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T2D DIODE T2D DIODE 64 T2D DIODE 32 T2D DIODE 46 t2d 63 diode IN T2D DIODE 74LVT273 LVT273 74LVT

T2D 96 diode

Abstract: T2D 78 diode + 0.5 Vo DC Output Voltage -0 .5 to V c c + 0 5 V l|K DC Input Diode Current ± 20 mA â'¢ok DC Output Diode Current ± 20 mA 'o DC Output Source Sink Current , CHARACTERISTICS T2D â  S ^ Parameter Vcc V|H High Level Input Voltage 2.0 4.5 6.0 1.5 , ns 265 53 45 ns 220 44 37 â'" 10 â'" â'" â'" 10 10 pF â'" 32
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T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D 36 DIODE M54HC365/366 M74HC365/366 HC365 HC366 M54/74HC365 M54/74HC366

T2D DIODE 46

Abstract: T2D DIODE 48 64 mA (Com'l), 48 mA (Mil) Source current 32 mA (Com'l), 12 mA (Mill Functional Description The , Min. typ.!5! Max. Unit Voti Out pul IIKiH Voltage V( ( â'"Min., I()H= _32 mA Com'l 2.0 V Y(V â , Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A , ( â'¢Y74KC,r240TQC; Q5 20-Lead (150-Mil) QSOP Qil ( 'YSdRf T2d(ITn\/TR ni, mi.
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T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB

T2D 24 DIODE

Abstract: T2d 43 diode Resistor for DAC D V refd 34 34 R fbd IOUTID Rfbd 32 33 IOUTID Complement of O utput D Current Output D 31 32 l0U T2D 30 31 CS Chip Select Current Output D , should be protected by Schottky diode clamps (H P5082-2835) from input pin to the supplies. A ll inputs
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MP7680 P7680 QDQ741Q

T2D 87 diode

Abstract: T2D 49 DIODE 13.84 (0.545) '13.59 (0.535) 60 (0.260) 32 (0.249) 3 1 . « II ESIâ'" J 20.07 (0.790) 'For , ) mJ dv/dt Peak Diode Recovery dv/dt ® 55 (See Fig. 30) V/ns Tj t STG Operating , - pF V q s - OV, VDS - 25V f = 1.0 MHz See Fig. 22 Source-Drain Diode Ratings and Characteristics © Parameter Min. Typ. Max. â s Continuous Source Current (Body Diode) â'" â'" 14 'SM Pulse Source Current (Body Diode) ® â'" â'" 56 Units A Test
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T2D 87 diode T2D 49 DIODE Rectifier t2d IRHM7130 IRHM8130 1X106 4A55452 IRHM7130D IRHM7130U

T2d DIODE

Abstract: T2D DIODE 48 GND FB 1 4 2 Inhb 1 3 2 E1CLK Clk19M 1 12 19 25 32 39 51 65 72 79 85 92 103 117 124 131 137 144 158 170 177 183 190 197 D2 DIODE PWRJACK J17 4 , .2 P0.3 1 3 5 7 9 11 13 15 17 19 + + + + + + + + + + GND 32 31 TP1 , 26 2 QXFRMR T4B 35 1 5 D31 PO300SA 33 32 4 D32 PO300SA 31 RxVdd RxVdd , 140 139 145 146 147 148 150 151 149 162 163 50 TRNG RTIP D25 PO300SA 33 32
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T2D 66 diode T2D DIODE 49 T2d 86 diode T2D 83 DIODE T2D 84 diode AC3101 384MH PTH08080W LED-1206 XCF02S XRT86SH221 T86SH

T2D DIODE

Abstract: T2D 79 diode details. A different tuning is required. +32 +31.5 Temp=25 °C, V CC=3.5V, VAPC12=2.6V Temp=+25 °C , =+85 °C, VCC=2.7V, VAPC1 2 = 2.6V At Po u t , m a x . V Cc = 3 - 5 V A t p OUT,MAX> V CC= 3 .0 V PoU T=+2°d , common inductance. Control input for the PIN diode. The purpose of the PIN diode is to attenuate the RF , match when the bias of the input stage is turned off. When this pin is "high" the PIN diode control is , eet the GSM system specs under those conditions, a PIN diode a ttenuator co n nected to the input can
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T2D 79 diode T2D 40 DIODE Diode T2D 79 t2d 17 diode DCS1800 DCS1900 F2140 1700M F2138 RF2140

marking A4t sot23

Abstract: A1t SOT23 DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 (DO34) 1N5818 1N5818 SOD81 1N821A 1N821A , BZV49-C16 SC-62/SOT89 DIODE MARKING CODE TO TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE
Philips Semiconductors
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marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 transistor marking codes A4p 1N5819 1N823 1PS59SB10 SC-59/SOT346 1N823A 1PS59SB14

T2D 79 diode

Abstract: T2D diode -79 MHz MHz MHz dBm dBm dBm dBm dBm % % % % dBm dBm +32 +31.5 Temp=25 °C, V CC=3.5V, VAPC12 , = 3 .0 V PoU T=+2°d B m POUT=+10dBm RBW =100kHz, 1805MHz to 1880MHz and 1930MHz to 1990MHz , ground slug. Control input for the PIN diode. The purpose of the PIN diode is to attenuate the RF input , when the bias of the input stage is turned off. When this pin is "high" the PIN diode control is turned , specs under those conditions, a PIN diode a ttenuator co n nected to the input can be turned on. The
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T2D DIODE 79 diode T2D series t2d 68 diode value T2D 26 diode

T2D DIODE 45

Abstract: T2D 85 diode o u t , m a x . V Cc = 3 - 5 V A t p OUT,MAX> V CC=3.0V PoU T=+2°d B m +32 +31.5 POUT , internally connected to the ground slug. Control input for the PIN diode. The purpose of the PIN diode is to , input match when the bias of the input stage is turned off. When this pin is "high" the PIN diode , conditions, a PIN diode a ttenuator co n nected to the input can be turned on. The figure below show s how , th e PIN diode is controlled by tw o signals: AT_EN and APC. The AT_EN signal allows current through
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T2D DIODE 45 T2D 85 diode T2D 37 DIODE T2D 55 diode

T2D 44 diode

Abstract: T2D DIODE 42 13 14 15 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 A1 XFER WR2 WR1 CS NC V refa r fba DAC , 26 27 28 29 30 31 32 33 34 35 NC V refa r fba No Connection Reference Input for DAC A , bunc lOUT2C !o UT2D !o u t i d r fbd v refd NC !0U T2D !o u t i d r fbd V refd AGND DGND , Schottky diode clamps (HP5082-2835) from input pin to the supplies. A ll inputs have protection diodes
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T2d 03 diode T2D DIODE 44 T2D DIODE 43 T2D 19 diode IDB77 UT2B TTL75 MP7680JN MP7680KN MP7680JE MP7680KE 3422L

marking A4t sot23

Abstract: PH C5V1 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 (DO34) 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34) 1N5819 1N5819 SOD81 1N823 1N823 SOD68 (DO34) 1PS59SB10 10 , BZV49-C16 SC-62/SOT89 DIODE MARKING CODE TO TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE
Philips Semiconductors
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C18 ph diode A4T SOT23 1n4148 sot23 A6t SOT23 Philips MARKING CODE a6t sot363 13t 1N825 1PS59SB15 1N825A 1PS59SB16 1N827 1PS59SB20

T2D DIODE 46

Abstract: T2D DIODE 48 1.87k PSW0 J3, D1, R1,R2, U2, U5, U6: Do Not Install. R12 10 3 80 1 12 19 25 32 , Clk19M 2 77 D2 DIODE Vcc3v3 LIUClkIn R13 10 3 M0 M1 M2 19 20 18 AIN0 , 40 35 33 30 24 TP4 TP5 T 32 31 TP14 TP12 TP10 TP8 TP6 TP4 TP2 TP0 1 , 32 4 D26 PO300SA 31 2 1 5 4 2 1 5 4 2 QXFRMR T4D 25 D27 PO300SA , 1 5 D31 PO300SA 33 32 4 D32 PO300SA 31 QXFRMR D10 B7 A5 C138 0.1uF 19
Exar
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T2D 82 diode T3D 54 DIODE t3d diode T2D DIODE 81 T3D 98 diode T2D 54 DIODE XRT86SH221ES XRT75VL00

T2D 96 diode

Abstract: SAA7350GP reference output; typically Vdoal/2 Vdacl 32 reference voltage supply for left channel DAC; normally this , input diode current - +20 mA V0 DC output voltage -0.5 +6.5 V lo DC output source or sink current - , . November 1991 672 â  711Dfl2b DDfiOfilB T2D This Material Copyrighted By Its Respective Manufacturer
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SAA7350 TDA1547 SAA7350GP philips saa7350gp T2D DIODE 96 idf2 SQT205AG D0007T 2896MH
Abstract: 7 3 1 3 b S â¡â¡2310'! T2D â  3.1.4 Burr Brown IC Data Book â'"Linear Products B U R R - B , MAXIMUM RATINGS ±6.0 ±3.6 ±2.7 ±6 V V V ±3.2 ±3.2 ±3.4 ±3.6 \ « OmADC q POWER SU PPLY Quiescent Current ±2.8 ±3.2 ±12.0 mA PACKAGE INFORMATION , continuous current of 30mA without destruction. To insure long term reliability, however, the diode current -
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BUF600/601 320MH 900MH 300MH BUF601 OPA66O

T2D DIODE

Abstract: T3D DIODE 2 1 1 SDA SCL 32 31 R8 4.7K RP19 SEL U15 C8051F320 2 1 R81 3 4 , DIODE + + LEDon# D61 2 2 4 50 49 48 47 46 43 42 41 39 38 37 36 35 34 , B43 B44 B45 B46 B47 B48 B49 CLK -CBE3 AD23 J1A1 1 14 32 45 56 70 85 100 117 , 4 QXFRMR T3B 35 D25 PO300SA 33 32 D26 PO300SA 31 QXFRMR T3A 40 D27 PO300SA 38 37 , RJ0 RJ45 TTIP QXFRMR T1B 35 RJ1 RJ45 C D9 PO300SA 33 32 1 5 TRNG RTIP
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T2D DIODE 94 AK9 RJ12 C1959 transistor ad149 T8046 T30L PMEAD30 93CS66 T86VSH328 T86VSH328SCH XRT86VSH328

ZENER DIODE t2d

Abstract: zener t2d is unchanged. 4. The LED shows the identification status. 1995 May 23 This Hi 711002b 00^05^0 T2D , C41 C42 C4 C4-level 0 0 1 >3.2 V 1 0 3-state 1.8 ±0.25 V 1 1 0 , diode zener diode protection for pins 4 to 17,21 and 23 for pins 1,2,3,18,19,20 and 24 Fig.7 Internal , 0.23 22.3 21.4 9.1 8.7 1.778 10.16 3.2 2.8 10.7 10.2 12.2 10.5 0.18 1.6 Note 1. Plastic or metal
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ZENER DIODE t2d zener t2d T2D 40 zener diode T2D 48 T2D zener Diode zener T2D TDA9847 1993F

philips diode PH 33D

Abstract: philips diode PH 33J Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 (DO34) 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34) 1N5819 1N5819 SOD81 1N823 1N823 SOD68 (DO34) 1PS59SB10 10 , BZV49-C16 SC-62/SOT89 DIODE MARKING CODE TO TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE
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philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph 1N827A 1PS59SB21 1N829 1PS70SB10 SC-70/SOT323 1N829A
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