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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

T2D DIODE 25

Catalog Datasheet MFG & Type PDF Document Tags

T2D DIODE

Abstract: T2D 70 diode SIEMENS Silicon PIN Diode BA 389 â'¢ Current-controlled RF resistor for switching and attenuating , Electronic-Library Service CopyRight 2003 BA 389 Electrical Characteristics at Ta = 25 °C, unless otherwise , current Vr = 30 V /H - 50 nA Diode capacitance Vr= 10 V,/= 1 MHz Vr = 0 V,/= 100 MHz Ct - 0.55 0.35 0.5 pF Forward resistance /= 100 MHz /f= 1.5 mA /f= 10 mA r f - 25 5 40 7.5 Q Zero bias conductance VR = 0 V,/= 100 MHz gv - 70 - nS Series inductance Ls - 2.5 - nH Siemens Aktiengeseiischaft 151 â
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t2d diode

Abstract: T2D 80 diode A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 , :IR(nA) Tj=125°C 10000 Tj=150°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=75°C 0.01 per diode , BETWEEN TERMINALS:Ct(pF) 1000 Tj=25°C IF=10A n=20pcs per diode 950 100 900 AVE:898.3mV 850 per diode 10 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800 100 Tj=25°C VR=200V n=20pcs per diode 300 Ta=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT
ROHM
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T2D DIODE

Abstract: T2D 83 diode WITHIN .25 mm (.010") OF TRUE POSITION. 3. AS MEASURED ATTHE SEATING PLANE. 4. INCH DIMENSIONS DERIVED FROM MILLIMETERS. â¡ â¡ G b 4 D ci T2D â  [sO GaAs INFRARED EMITTING DIODE , GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code , 742 Fui OPTOELECTRONICS GaAs INFRARED EMITTING DIODE F5F1
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T2D DIODE

Abstract: T2D DIODE 02 ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode www.rohm.com © 2011 ROHM Co., Ltd , 950 900 850 AVE:894.5mV per diode 10 0 5 10 15 20 25 800 30 VF , Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General , 5.0±0.2 RFN16 T2D â'  Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN , Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak
ROHM
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T2D DIODE T2D DIODE 02 R1120A

T2D DIODE

Abstract: T2D 16 DIODE A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 Tj=25°C per diode 1 0 50 100 150 200 REVERSE VOLTAGEVR(V , ) 1000 Tj=25°C IF=8A n=20pcs per diode 950 100 900 850 AVE:894.5mV per diode 10 0 5 10 , =200V n=20pcs per diode 240 Ta=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT:IR(nA
ROHM
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RFN16T2D T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80

T2D diode

Abstract: diode t2d A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 Tj=25°C per diode 1 0 50 100 150 200 REVERSE VOLTAGEVR(V , ) 1000 Tj=25°C IF=8A n=20pcs per diode 950 100 900 850 AVE:894.5mV per diode 10 0 5 10 , =200V n=20pcs per diode 240 Ta=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT:IR(nA
ROHM
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diode t2d T2D DIODE 60 T2D 80_ diode

T2D 40 DIODE

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General , 12.0±0.2 14.0±0.5 1.2 1.3 0.8 13.5MIN 5.0±0.2 RFN20 T2D â'  Construction Silicon , ) Conditions Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one , Rth(j-c) junction to case ï¼ ï¼ 2.0 °C/W Thermal Resistance * per diode , =25°C 10 per diode per diode 0.001 0 500 1000 1 1500 FORWARD VOLTAGE:VF(mV) VF-IF
ROHM
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T2D 40 DIODE

RFN-10

Abstract: T2D DIODE RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification , RFN10 T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
ROHM
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RFN-10 T2D 14 DIODE RFN10 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode AVE24

T2D diode

Abstract: T2D 80 diode BETWEEN TERMINALS:Ct(pF) 1000 Tj=25°C IF=10A n=20pcs per diode 950 100 900 AVE:898.3mV 850 per diode 10 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800 100 Tj=25°C VR=200V n=20pcs per diode 300 Ta=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT , RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification , Construction Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2
ROHM
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RFN20 DIODE T2D 09 diode T2D 55 diode T2D 1 DIODE T2D 05 DIODE RFN-20

T2D 85 diode

Abstract: T2D 65 DIODE 4.5 A Repetitive Avalanche Energy Q 2.3 mJ Peak Diode Recovery dv/dt Q 6.5 , Gate-Source Charge Vgs=-20V V ds=100V 25 tr Vgs=20V jxA 25 Rise Time nA 25 *d , ® Source-Drain Diode Ratings and Characteristics Symbol Min. Typ. Max. Units Characteristic u Continuous Source Current Ism Pulsed-Source Current 0 - - 20 Vsd Diode Forward , =27£l, Starting Tj =25â'C lS < 5.6A, di/dt < 250A/ is, V0D BVD . Starting T, =25 °C D < 5S Pulse Test
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T2D 85 diode T2D 65 DIODE T2D 54 DIODE T2D DIODE 45 23/ZENER DIODE t2d 54 IRLS510A D3T23

T2D DIODE

Abstract: T2D DIODE 02 ¼ 0.01 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×I R ï¼ 15 25 ns Rth(j-c) junction to case ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode , Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General , T2D â'  14.0±0.5 3)Low switching loss 8.0±0.2 12.0±0.2 Features 1)Cathode common , week factory) Conditions Limits 200 200 Tc=122°C 1/2Io at per diode 60Hz half sin wave
ROHM
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T2D DIODE 16

T2D DIODE

Abstract: RFN-10 Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions , T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
ROHM
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T2D 6 N diode T2D 80

T2D 24 DIODE

Abstract: T2d 43 diode ) Symbol Parameter Conditions Min Typ Max Units 2.5 A 1.2 V 140 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is Drain-Source Diode Forward Voltage V so 0 VGS= Reverse Recovery Time V V - ls = 2.5 A V GS= (Note 2) 0 V, I = 2.5 A dlp/dt = 1 0 0 A/ps p 0.845 Notes: 1. - , . â  1 1 1 1 1 1* 1* 1 * 1 . -50 -25 0 25 50 75 1 00 125 150 T Jt JUNCTION
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T2D 24 DIODE T2d 43 diode T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE NDT455N

T2D 62 diode

Abstract: T2D 98 DIODE ,) Turn-Off-Time W (ton=td(o +tf) iD Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time , ) tr t d(off) tf 5 900 150 70 2,5 f=1MHz VC =300V C I d=9A 1 AV 25 70 60 35 , *,=25â'˜C Forward Characteristics of Reverse Diode Typical Gate Charge Characteristic lp=f(Vso); W hs pulse test; V qs =OV Voe^Q gX lo=9A; Tc*25*C C=fVca); Vû3=0V; fslMHz à s > 8 , (Vl»): D =0.01, T c =25"C VÅ" =60V; W =9A ; ! ' ! ] ! . 4~ . .1 4 . I
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T2D 62 diode T2D 98 DIODE T2D 27 diode T2D 70 diode 2SK2645-01MR

T2D 22 diode

Abstract: T2D 56 DIODE max. 4 6 A A - ' cm max. Total power dissipation up to T m|j = 25 °C pto t , ) Collector current (d.c.) - V ebo - 'c Collector current (peak value) - ' cm Reverse diode , 'b max. 100 Total power dissipation up to T m|j = 25 °C R t to max. Storage , BDT60B;60C Silicon Darlington power transistors V J CHARACTERISTICS Tj - 25 °C unless , heatsink); TamB = 25 °C -â'¢{S B ) > 1 A D.C. current â'"IC = 0,5 - l C = 1 ,5 â'"I c = 4
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T2D 22 diode T2D 56 DIODE BDT60 BDT61 BDT61A BDT61B BDT61C A060-1

T2D 96 diode

Abstract: T2D 78 diode + 0.5 Vo DC Output Voltage -0 .5 to V c c + 0 5 V l|K DC Input Diode Current ± 20 mA â'¢ok DC Output Diode Current ± 20 mA 'o DC Output Source Sink Current , CHARACTERISTICS T2D â  S ^ Parameter Vcc V|H High Level Input Voltage 2.0 4.5 6.0 1.5 , '" Propagation Delay 2.0 Time* 4.5 S *PHL Typ. Max. 25 7 6 60 12 10 Min. â'" 120 , 150 30 26 180 36 31 ns 145 29 25 175 35 30 ns 190 38 33 225 45 38
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T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D 19 diode T2D DIODE 29 M54HC365/366 M74HC365/366 HC365 HC366 M54/74HC365 M54/74HC366

T2D DIODE

Abstract: T2D DIODE 64 Vcc DC supply voltage -0.5 to +4.6 V l|k DC input diode current V| , -0.2 Vcc-0-1 VOH High-level output voltage Vcc = 2.7V; Ioh = -8mA 2.4 2.5 V VCc = 3.0V; Ioh = -32mA , performance. 711002t. DDTSñOO T2D May 11, 1994 6-27 This Material Copyrighted By Its Respective
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T2D DIODE 64 T2D DIODE 46 t2d 63 diode IN T2D DIODE T2D DIODE 63 T2D 17 DIODE 74LVT273 LVT273 74LVT

T2D DIODE 34

Abstract: Diode T2D od -2 P T.2D h -0 . -o . °b -Qb ha- 1.2D 'Oc-he^" 'Od-hd - -Oe -ö c -Od , 65°C to + 1 50"C - 55°C to + 1 25°C - 55°C to + 1 75"C -55°C to + 1 50°C -0 .5 V to + 7.0V -0 .5 V , Military Commercial Supply Voltage Military Commercial - 55°C to + 1 25"C 0°C to +70°C + 4.5V to + 5.5V + , Characteristics Symbol Min V|H V|L VCD VOH Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output , ) Power Supply Current ('F399) Power Supply Current ('F399) -6 0 25 25 22 22 54F 74F 54F 74F 74F 4.75 2.5
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T2D DIODE 34 Diode T2D od T2D 95 diode T2D DIODE 06 T2D 34 T2D 06 DIODE 54F/74F398 54F/74F399 74F398PC 54F398DM 74F398SC 54F398FM

T2D 24 DIODE

Abstract: T2d 43 diode C Feedback Resistor for DAC C Reference input for DAC C 28 V refc 25 VREFC Current , utput D Current Output D 31 32 l0U T2D 30 31 CS Chip Select Current Output D , in 5 ±10 7 ±25 3 7 k£2 V DIGITAL INPUTS Input High Voltage Input Low , Capacitance DAC DAC DAC DAC ' 3422blê 000740S 25 ? M 4 -3 1 0 all all all all 1's 0 , . ±25 AGND to D G N D .±1
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MP7680 P7680 QDQ741Q

T2D DIODE 46

Abstract: T2D DIODE 48 Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A , . 4. T,\ is I he "instant on" east' temperature. 'typical values are al V< â ( ' = 5.0V, T,\= +25 , 2,4 mA Vfc=Max., 50% Duty Cycle, Outputs Open, Eight Bits Toggling at fi=2.5 MHz, ÃE, =ÃE2 = GND , ( â'¢Y74KC,r240TQC; Q5 20-Lead (150-Mil) QSOP Qil ( 'YSdRf T2d(ITn\/TR ni, mi.
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T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB
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