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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

T2D DIODE 25

Catalog Datasheet MFG & Type PDF Document Tags

T2D DIODE

Abstract: T2D 70 diode SIEMENS Silicon PIN Diode BA 389 â'¢ Current-controlled RF resistor for switching and attenuating , Electronic-Library Service CopyRight 2003 BA 389 Electrical Characteristics at Ta = 25 °C, unless otherwise , current Vr = 30 V /H - 50 nA Diode capacitance Vr= 10 V,/= 1 MHz Vr = 0 V,/= 100 MHz Ct - 0.55 0.35 0.5 pF Forward resistance /= 100 MHz /f= 1.5 mA /f= 10 mA r f - 25 5 40 7.5 Q Zero bias conductance VR = 0 V,/= 100 MHz gv - 70 - nS Series inductance Ls - 2.5 - nH Siemens Aktiengeseiischaft 151 â
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t2d diode

Abstract: T2D 80 diode A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 , :IR(nA) Tj=125°C 10000 Tj=150°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=75°C 0.01 per diode , BETWEEN TERMINALS:Ct(pF) 1000 Tj=25°C IF=10A n=20pcs per diode 950 100 900 AVE:898.3mV 850 per diode 10 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800 100 Tj=25°C VR=200V n=20pcs per diode 300 Ta=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT
ROHM
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T2D DIODE

Abstract: T2D 83 diode WITHIN .25 mm (.010") OF TRUE POSITION. 3. AS MEASURED ATTHE SEATING PLANE. 4. INCH DIMENSIONS DERIVED FROM MILLIMETERS. â¡ â¡ G b 4 D ci T2D â  [sO GaAs INFRARED EMITTING DIODE , GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code , 742 Fui OPTOELECTRONICS GaAs INFRARED EMITTING DIODE F5F1
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T2D DIODE

Abstract: T2D DIODE 02 ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode www.rohm.com © 2011 ROHM Co., Ltd , 950 900 850 AVE:894.5mV per diode 10 0 5 10 15 20 25 800 30 VF , Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General , 5.0±0.2 RFN16 T2D â'  Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN , Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak
ROHM
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T2D DIODE T2D DIODE 02 R1120A

T2D DIODE

Abstract: T2D 16 DIODE A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 Tj=25°C per diode 1 0 50 100 150 200 REVERSE VOLTAGEVR(V , ) 1000 Tj=25°C IF=8A n=20pcs per diode 950 100 900 850 AVE:894.5mV per diode 10 0 5 10 , =200V n=20pcs per diode 240 Ta=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT:IR(nA
ROHM
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RFN16T2D T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 T2D 80 diode diode t2d 80

T2D diode

Abstract: diode t2d A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 Tj=25°C per diode 1 0 50 100 150 200 REVERSE VOLTAGEVR(V , ) 1000 Tj=25°C IF=8A n=20pcs per diode 950 100 900 850 AVE:894.5mV per diode 10 0 5 10 , =200V n=20pcs per diode 240 Ta=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT:IR(nA
ROHM
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diode t2d T2D DIODE 60 T2D 80_ diode

T2D 40 DIODE

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General , 12.0±0.2 14.0±0.5 1.2 1.3 0.8 13.5MIN 5.0±0.2 RFN20 T2D â'  Construction Silicon , ) Conditions Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one , Rth(j-c) junction to case ï¼ ï¼ 2.0 °C/W Thermal Resistance * per diode , =25°C 10 per diode per diode 0.001 0 500 1000 1 1500 FORWARD VOLTAGE:VF(mV) VF-IF
ROHM
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T2D 40 DIODE

RFN-10

Abstract: T2D DIODE RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification , RFN10 T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
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RFN-10 T2D 14 DIODE RFN10 DIODE T2D 6 DIODE T2D 75 diode T2D 8 diode AVE24

T2D diode

Abstract: T2D 80 diode BETWEEN TERMINALS:Ct(pF) 1000 Tj=25°C IF=10A n=20pcs per diode 950 100 900 AVE:898.3mV 850 per diode 10 0 5 10 15 20 25 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 800 100 Tj=25°C VR=200V n=20pcs per diode 300 Ta=25°C f=1MHz VR=0V n=10pcs per diode REVERSE CURRENT , RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification , Construction Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2
ROHM
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RFN20 DIODE T2D 09 diode T2D 55 diode T2D 1 DIODE T2D 05 DIODE RFN-20

T2D 85 diode

Abstract: T2D 65 DIODE 4.5 A Repetitive Avalanche Energy Q 2.3 mJ Peak Diode Recovery dv/dt Q 6.5 , Gate-Source Charge Vgs=-20V V ds=100V 25 tr Vgs=20V jxA 25 Rise Time nA 25 *d , ® Source-Drain Diode Ratings and Characteristics Symbol Min. Typ. Max. Units Characteristic u Continuous Source Current Ism Pulsed-Source Current 0 - - 20 Vsd Diode Forward , =27£l, Starting Tj =25â'C lS < 5.6A, di/dt < 250A/ is, V0D BVD . Starting T, =25 °C D < 5S Pulse Test
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T2D 85 diode T2D 65 DIODE T2D 54 DIODE T2D DIODE 45 IRLS510A D3T23

T2D DIODE 02

Abstract: T2D DIODE ¼ 0.01 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×I R ï¼ 15 25 ns Rth(j-c) junction to case ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode , Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General , T2D â'  14.0±0.5 3)Low switching loss 8.0±0.2 12.0±0.2 Features 1)Cathode common , week factory) Conditions Limits 200 200 Tc=122°C 1/2Io at per diode 60Hz half sin wave
ROHM
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T2D DIODE 16

T2D DIODE

Abstract: RFN-10 Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions , T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF
ROHM
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T2D 6 N diode T2D 80

T2D 24 DIODE

Abstract: T2d 43 diode ) Symbol Parameter Conditions Min Typ Max Units 2.5 A 1.2 V 140 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is Drain-Source Diode Forward Voltage V so 0 VGS= Reverse Recovery Time V V - ls = 2.5 A V GS= (Note 2) 0 V, I = 2.5 A dlp/dt = 1 0 0 A/ps p 0.845 Notes: 1. - , . â  1 1 1 1 1 1* 1* 1 * 1 . -50 -25 0 25 50 75 1 00 125 150 T Jt JUNCTION
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T2D 24 DIODE T2d 43 diode T2d 61 diode T2D DIODE 42 T2D 04 DIODE NDT455N

T2D 62 diode

Abstract: T2D 98 DIODE ,) Turn-Off-Time W (ton=td(o +tf) iD Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time , ) tr t d(off) tf 5 900 150 70 2,5 f=1MHz VC =300V C I d=9A 1 AV 25 70 60 35 , *,=25â'˜C Forward Characteristics of Reverse Diode Typical Gate Charge Characteristic lp=f(Vso); W hs pulse test; V qs =OV Voe^Q gX lo=9A; Tc*25*C C=fVca); Vû3=0V; fslMHz à s > 8 , (Vl»): D =0.01, T c =25"C VÅ" =60V; W =9A ; ! ' ! ] ! . 4~ . .1 4 . I
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T2D 62 diode T2D 98 DIODE T2D 27 diode T2D 70 diode 2SK2645-01MR

T2D 22 diode

Abstract: T2D 56 DIODE max. 4 6 A A - ' cm max. Total power dissipation up to T m|j = 25 °C pto t , ) Collector current (d.c.) - V ebo - 'c Collector current (peak value) - ' cm Reverse diode , 'b max. 100 Total power dissipation up to T m|j = 25 °C R t to max. Storage , BDT60B;60C Silicon Darlington power transistors V J CHARACTERISTICS Tj - 25 °C unless , heatsink); TamB = 25 °C -â'¢{S B ) > 1 A D.C. current â'"IC = 0,5 - l C = 1 ,5 â'"I c = 4
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T2D 22 diode T2D 56 DIODE BDT60 BDT61 BDT61A BDT61B BDT61C A060-1

T2D 96 diode

Abstract: T2D 78 diode + 0.5 Vo DC Output Voltage -0 .5 to V c c + 0 5 V l|K DC Input Diode Current ± 20 mA â'¢ok DC Output Diode Current ± 20 mA 'o DC Output Source Sink Current , CHARACTERISTICS T2D â  S ^ Parameter Vcc V|H High Level Input Voltage 2.0 4.5 6.0 1.5 , '" Propagation Delay 2.0 Time* 4.5 S *PHL Typ. Max. 25 7 6 60 12 10 Min. â'" 120 , 150 30 26 180 36 31 ns 145 29 25 175 35 30 ns 190 38 33 225 45 38
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T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D 36 DIODE M54HC365/366 M74HC365/366 HC365 HC366 M54/74HC365 M54/74HC366

T2D DIODE

Abstract: T2D DIODE 64 Vcc DC supply voltage -0.5 to +4.6 V l|k DC input diode current V| , -0.2 Vcc-0-1 VOH High-level output voltage Vcc = 2.7V; Ioh = -8mA 2.4 2.5 V VCc = 3.0V; Ioh = -32mA , performance. 711002t. DDTSñOO T2D May 11, 1994 6-27 This Material Copyrighted By Its Respective
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T2D DIODE 64 T2D DIODE 32 T2D DIODE 46 t2d 63 diode IN T2D DIODE T2D DIODE 63 74LVT273 LVT273 74LVT

T2D DIODE 34

Abstract: Diode T2D od -2 P T.2D h -0 . -o . °b -Qb ha- 1.2D 'Oc-he^" 'Od-hd - -Oe -ö c -Od , 65°C to + 1 50"C - 55°C to + 1 25°C - 55°C to + 1 75"C -55°C to + 1 50°C -0 .5 V to + 7.0V -0 .5 V , Military Commercial Supply Voltage Military Commercial - 55°C to + 1 25"C 0°C to +70°C + 4.5V to + 5.5V + , Characteristics Symbol Min V|H V|L VCD VOH Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output , ) Power Supply Current ('F399) Power Supply Current ('F399) -6 0 25 25 22 22 54F 74F 54F 74F 74F 4.75 2.5
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T2D DIODE 34 Diode T2D od T2D 95 diode T2D DIODE 06 T2D 34 T2D 06 DIODE 54F/74F398 54F/74F399 74F398PC 54F398DM 74F398SC 54F398FM

T2D 24 DIODE

Abstract: T2d 43 diode C Feedback Resistor for DAC C Reference input for DAC C 28 V refc 25 VREFC Current , utput D Current Output D 31 32 l0U T2D 30 31 CS Chip Select Current Output D , in 5 ±10 7 ±25 3 7 k£2 V DIGITAL INPUTS Input High Voltage Input Low , Capacitance DAC DAC DAC DAC ' 3422blê 000740S 25 ? M 4 -3 1 0 all all all all 1's 0 , . ±25 AGND to D G N D .±1
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MP7680 P7680 QDQ741Q

T2D DIODE 46

Abstract: T2D DIODE 48 Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A , . 4. T,\ is I he "instant on" east' temperature. 'typical values are al V< â ( ' = 5.0V, T,\= +25 , 2,4 mA Vfc=Max., 50% Duty Cycle, Outputs Open, Eight Bits Toggling at fi=2.5 MHz, ÃE, =ÃE2 = GND , ( â'¢Y74KC,r240TQC; Q5 20-Lead (150-Mil) QSOP Qil ( 'YSdRf T2d(ITn\/TR ni, mi.
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T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB
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