500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

T2D 6 N diode

Catalog Datasheet MFG & Type PDF Document Tags

T2D DIODE

Abstract: T2D 83 diode FROM MILLIMETERS. â¡ â¡ G b 4 D ci T2D â  [sO GaAs INFRARED EMITTING DIODE , GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 , . -5 5 ° C to + 1 0 0 °C Soldering: Lead Temperature ( Ir o n , ) . 2 6 0 °C fo r1 0 s e c .|2A 51 C ontinuous Forward Current , . 6 Volts Power Dissipation
-
OCR Scan

RFN-10

Abstract: T2D DIODE RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification , RFN10 T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF , TERMINALS:Ct(pF) 1000 Tj=25°C IF=5A n=20pcs 950 100 900 10 AVE:887.5mV 850 1 0 5 10 15
ROHM
Original
RFN-10 T2D DIODE T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE AVE24 R1120A

T2D 85 diode

Abstract: T2D 65 DIODE 4.5 A Repetitive Avalanche Energy Q 2.3 mJ Peak Diode Recovery dv/dt Q 6.5 , Test Condition - @@ V ds=80V,Vgs=5V, nC Id=5.6A See Fig 6 & Fig 12 ® ® Source-Drain Diode Ratings and Characteristics Symbol Min. Typ. Max. Units Characteristic u Continuous Source Current Ism Pulsed-Source Current 0 - - 20 Vsd Diode Forward , t a g e VÅ" , Drain-Source Valtage [VI M Rs
-
OCR Scan
T2D 85 diode T2D 65 DIODE T2D 8 diode T2D 54 DIODE T2D DIODE 45 T2D 09 diode IRLS510A D3T23

T2D 24 DIODE

Abstract: T2d 43 diode nA V ON CHARACTERISTICS ( o 3 N te ^S GM Gate Threshold Voltage VDS= 1 Tj= 125°C ^S0 ) D( N Static Drain-Source On-Resistance 1.5 3 0.7 0.9 2.2 0.013 lD= 250 , to ) (n V6S= 1 0 V , V DS= 5 V n 15 VGS= 10V, lD= 11.5A A 26 S 1220 pF , Time Vdo = 15 V, lD = 1 A, vGN=iov,(^tN = 6 a E Gate-Source Charge ns 16 30 ns , Rev.F 3 4 b cib74 D Q 3 E n O ISfl Electrical Characteristics (Ta =. 25°C unless otherwise noted
-
OCR Scan
T2D 24 DIODE T2d 43 diode T2d 61 diode T2D DIODE 42 diode T2D T2D 04 DIODE NDT455N

T2D DIODE 02

Abstract: T2D DIODE Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General , T2D â'  14.0±0.5 3)Low switching loss 8.0±0.2 12.0±0.2 Features 1)Cathode common , week factory) Conditions Limits 200 200 Tc=122°C 1/2Io at per diode 60Hz half sin wave , ns Rth(j-c) junction to case ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode , =25°C 100 10 0 5 10 15 20 25 Tj=25°C IF=5A n=20pcs 950 900 850 AVE
ROHM
Original
T2D DIODE 02 T2D DIODE 16 T2D 80 diode T2D 80_ diode

T2D DIODE

Abstract: RFN-10 Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions , T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF , TERMINALS:Ct(pF) 1000 Tj=25°C IF=5A n=20pcs 950 100 900 10 AVE:887.5mV 850 1 0 5 10 15
ROHM
Original
T2D 6 N diode T2D 75 diode T2D DIODE 60 T2D 1 DIODE T2D 80

T2D 22 diode

Abstract: T2D 56 DIODE % levels) - Ic o n = 1.5 A ; â'"l Bon â' l Bof f â' 6 m A ;- V qc = 30 V turn-on time turn-off time , max. 4 6 A A - ' cm max. Total power dissipation up to T m|j = 25 °C pto t , BDT60B;60C R1 typ. 6 kJl R 2typ. 100 12 Fig. 2 Circuit diagram. RATINGS Limiting values in , ) Collector current (d.c.) - V ebo - 'c Collector current (peak value) - ' cm Reverse diode , . 5 V max. 4 A max. 6 A A ' r = 'c max. 4 Base current (d.c.) -
-
OCR Scan
T2D 22 diode T2D 56 DIODE diode t2d 05 T2D 70 diode BDT60 BDT61 BDT61A BDT61B BDT61C A060-1

T2D 62 diode

Abstract: T2D 98 DIODE ,) Turn-Off-Time W (ton=td(o +tf) iD Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time , 6 6 7 8 Gate Threshold Voltage vs. T* Voson^T«*); lo=1nA V s= o o Va Vos=25V; T*,=25â'˜C Forward Characteristics of Reverse Diode Typical Gate Charge Characteristic lp=f(Vso); W , «10 » 10 0 0 9 [n C ] â'" > Safe Operation Area Avalanche Energy Derating ltf=l , 4 r i 'j. i â'" N 4 ¿ L â'" > This specification is subject to change without
-
OCR Scan
T2D 62 diode T2D 98 DIODE T2D 27 diode 2SK2645-01MR

T2D 96 diode

Abstract: T2D 78 diode ® CHIP CARRIER S * 6 ? t1 2 ,Ì S 3 7 Q D M O lS b GTM â  S 6 T H S-THO M SO N , /366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER (3-STATE) HC365 , POWER DISSIPATION lc c = 4 ixA (MAX.) at Ta = 25°C â  HIGH NOISE IMMUNITY V n ih = V n il = 2 8 % , OUTPUT IMPEDANCE MOHl = loL = 6 m A (M IN .) â  BALANCED PROPAGATION DELAYS tPLH = tPHL â  WIDE , discharge and transient ex­ cess voltage. (] vcc G 2 3 '~ * L 6* ^ 6V 1 â' '
-
OCR Scan
T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D DIODE 29 T2D 36 DIODE M54HC365/366 M74HC365/366 HC366 M54/74HC365 M54/74HC366

T2D DIODE

Abstract: T2D DIODE 64 SYMBOL ran [7 2Ã| Vcc OO [2 g Q7 DO [3 3 07 oi (T a D6 Q1 (J 06 02 [6 n OS D2 [7 DS D3 (T n D4 Q3 ¡T HI Q4 GND Qc 33 CP 3*7 8 13 1* 17 18 DO D1 D2 03 D4 D5 06 D7 CP , 0V TYPICAL UNIT tPLH tpHL Propagation delay CP to Qn C|_ = 50pF; Vcc = 3.3V 3.5 ns C|N Input , , 4, 7, 8,13,14,17,18 D0-D7 Data inputs 2, 5, 6, 9,12,15,16,19 Q0-Q7 Data outputs 1 MR Master Reset , Output as it was I 711082b â¡075?c1? bOb â  May 11, 1994 6 - 24 This Material Copyrighted By Its
-
OCR Scan
T2D DIODE 64 T2D DIODE 32 T2D DIODE 46 t2d 63 diode IN T2D DIODE T2D DIODE 63 74LVT273 LVT273 74LVT

T2D DIODE 34

Abstract: Diode T2D od he hd 'od °d T L /F /9 5 3 3 -5 QbQb- G N D - 10 11 - C P T L /F /9 5 3 3 -6 7-300 b S , W [El CD B S E l s- 1 0«- 2 ·o«- 3 h»- 4 'ib - 5 o b 6 Q b- 7 G N D- 8 16 _ v cc 15 - o d , /1.0 1.0/1.0 50/33.3 50/33.3 Input I|H/ I il O utput Io h / I o l 20 n A / - 0 . 6 mA 20 jaA/ -0.6 mA , V|N = 74F 3.75 - 0 .6 -1 5 0 38 38 34 34 f*A mA mA mA mA mA mA 0.0 Max Max Max Max Max , minimum ESD protection- 'F399 Ordering Code: see section n Commercial 74F398PC 54F398DM (Note 2
-
OCR Scan
T2D DIODE 34 Diode T2D od T2D 95 diode T2D DIODE 06 T2D 34 T2D 06 DIODE 54F/74F398 54F/74F399 74F398SC 54F398FM 54F398LM 74F399PC

T2D 70 diode

Abstract: T2D DIODE â  LTC1320 flà s o iu T c m n x im u m R n u n G s P R C K R G â'¬ /O R D â'¬ R M F O R fllR T IO n Supply Voltage (Vqd) . 7V Supply Voltage (Vss , TXDEN H SD E RXEÃ' [ T m -i>i Ï8 V d 1 d ORDER PART NUMBER ¡ 3 TXD¡6] TXD , ±3.4 Input High Voltage V 3 +10 V V V -7V , Enable to Output Active Cl = lOOpF (Figures 6, 7,15) â'¢ 30 100 ns to, Ldis Receiver
-
OCR Scan
RS422/RS562 RS422 RS562 RS562/RS562 LT1054

T2D 24 DIODE

Abstract: T2d 43 diode . SIMPLIFIED BLOCK DIAGRAM r FBA b u n a DB11 - DB4 (MSB) DB3 - DBO (LSB) B1/E2 Input , TM 3422b lfl 00074Q3 464 4 -3 0 8 MP7680 J T E X A R « n v PIN OUT , bUT2A Complement o f O utput A 6 NC No Connection 6 NC No Connection 7 VREFA , Output C 30 Input Data Bits 11 (MSB) to 6 IOUT2C Complement of O utput C l0UT2D , utput D Current Output D 31 32 l0U T2D 30 31 CS Chip Select Current Output D
-
OCR Scan
P7680 QDQ741Q

T2D DIODE 46

Abstract: T2D DIODE 48 Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A 1 j j Input 1 HCl 1 Current Va=Maxâ'ž V|N = 2.7V ±1 pA In Input LOW Current Va.'=Max., V|n , »9 oe, c 5 fct240t 16 u öa, qnd' 10 daj c 6 15 1 db, qba! »11 öb2 C 7 14 h oa, OAaj 12 DA-j E 8 13 3 , 19 : ôêb obaz 3 ib 1 oan 4 17 h ob, ob, c 5 fct244t 16 3 oa, da;, c 6 is 3 ob, ob2c 7 14 h oa2 â¡aac 8 13 h 0b2 os3c 9 12 1 oa, onü c 1u 11 j uö3 fct24ût-6 9â'"44 CYPRESS : Function Table
-
OCR Scan
T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB

diode t2d 77

Abstract: T2D 21 diode BUFFER * - I- R fbb r FBC V I THREE-STATE BUFFER T-CONTROL LOGIC IC -N , 5 to + 1 2 5 °C Part No. M P 7628JN M P 7628K N M P 7628JS M P 7628K S M P 762 8JP M P 7628K P M , ·o u n c _ , I- -1 -2 3 4 5 loUTIA V REFA G N D R fbc R f BA V DD V r ef c · 28 , ) DB6 1 -c=z = -1 -1 -1 - 6 7 S H 20 6 9 10 11 12 13 14 See 23 Pin , PIN OUT DEFINITIONS PIN NO . 1 NAME D E S C R IP T IO N V qd V refa R fba >0UT1A
-
OCR Scan
diode t2d 77 T2D 21 diode FBC 320 a BA 4213 FBC 320 T2D 77 MP7628 MP7529B P7628

T2D 52 diode

Abstract: T2D 80 diode '¢ Immediate Product Into: (800) 54W132 B U R R - BROW N 5.2 6 8 1 7 3 1 3 b S DD31D?tì T2D Or, Call , ree-p o rt configuration. O n e o f the 7 22 chan n els pro v id es p o w e r to the 3 6 5 0 â'™s input , stage o f tw o 3 6 5 0 â'™s co n n ected in th e tw op o rt configuration. P o w er fo r the o u tp u t , 1.1" x 0.3") DESCRIPTION T he 7 2 2 co n v erts a sin g le 5 V D C to 16V D C in p u t into a p a ir o f b ip o lar o u tp u t voltages o f the sam e v alue as the in p u t voltage. T h e co n v
-
OCR Scan
T2D 52 diode T2D 00 DIODE

T2D 85 diode

Abstract: FBC 320 four quadrant n u tiplication charac teristics with a separate reference input and feedback resistor , -o - -N T * / * -s , -THREE-STATE BUFFER LATCH B f " THREE-STATE 1 BUFFER , THREE-STATE BUFFER 4 * I bu T 2 c/ bU T2D CONTROL LOGIC - LATCH D ^ dacd , fb (LSB)DBO DB1 DB2 DB3 0B4 DB5 Cl E E E E E E GND V refc R fbc ^ oun c loUT2C^OUT2D n i ï i i ï i n f a ^ a IoUT2A/ I- b u T 2 B *-&- I _ ta u n c buT2
-
OCR Scan

T2D 87 diode

Abstract: T2D 49 DIODE ) mJ dv/dt Peak Diode Recovery dv/dt ® 55 (See Fig. 30) V/ns Tj t STG Operating , case for 10s) Weight 9.3 (typical) g Electrical Characteristics @ t =2 ° ( n uoh r is s e , , 6 (0.25 in.) from package to source bonding pad. Cjss Input Capacitance â'" 1100 â , - pF V q s - OV, VDS - 25V f = 1.0 MHz See Fig. 22 Source-Drain Diode Ratings and Characteristics © Parameter Min. Typ. Max. â s Continuous Source Current (Body Diode) â
-
OCR Scan
T2D 87 diode T2D 49 DIODE Rectifier t2d IRHM7130 IRHM8130 1X106 4A55452 IRHM7130D IRHM7130U

T2D DIODE

Abstract: T2D 79 diode ic e s , Inc. 7 6 2 5 T h o rn d ik e R o ad G re e n s b o ro , N C 2 7 4 0 9 , U S A Tel (3 3 6 ) 6 6 4 1 2 3 3 F ax (3 3 6 ) 6 6 4 0 4 5 4 h ttp ://w w w .rf m d .co m F u n c tio n a l B lo ck D , |N = + 1 0 d B m VAPc i 2 = 0 .2 V , P|sj = + 6 d B m Po u t , m a x -5 d b < p o u t < p o u t , eet the GSM system specs under those conditions, a PIN diode a ttenuator co n nected to the input can , 6 C O G s e r ie s * * J o h a n s o n 5 0 0 R 0 7 F s e r ie s C20 . A ll o th e r s a r e P a n a
-
OCR Scan
T2D 79 diode Diode T2D 79 t2d 17 diode DCS1800 DCS1900 F2140 1700M F2138 RF2140

T2D 79 diode

Abstract: T2D diode ic e s , Inc. 7 6 2 5 T h o rn d ik e R o ad G re e n s b o ro , N C 2 7 4 0 9 , U S A Tel (3 3 6 ) 6 6 4 1 2 3 3 F ax (3 3 6 ) 6 6 4 0 4 5 4 h ttp ://w w w .rf m d .co m F u n c tio n a l B lo ck D , i 2 = 0-2V , P |N = + 1 0 d B m VAPc i 2 = 0 .2 V , P|sj = + 6 d B m Po u t , m a x -5 d b < p o , =+10dBm POUT=-10dBm to +33dBm DC to 2 MHz V A P C 1,2 = 2 -6 V V A P C 1,2 = 0 V V A T _ E N = 2 -6 V > V A P , load VSWR 6:1, P o u T < + 3 3 d B m DC Current at P0 ut , max Idle Current, P|N
-
OCR Scan
T2D DIODE 79 diode T2D series t2d 68 diode value T2D 26 diode
Showing first 20 results.