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Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

T2D 6 N diode

Catalog Datasheet MFG & Type PDF Document Tags

T2D DIODE

Abstract: T2D 83 diode FROM MILLIMETERS. â¡ â¡ G b 4 D ci T2D â  [sO GaAs INFRARED EMITTING DIODE , GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 , . -5 5 ° C to + 1 0 0 °C Soldering: Lead Temperature ( Ir o n , ) . 2 6 0 °C fo r1 0 s e c .|2A 51 C ontinuous Forward Current , . 6 Volts Power Dissipation
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RFN-10

Abstract: T2D DIODE RFN10T2D Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification , RFN10 T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF , TERMINALS:Ct(pF) 1000 Tj=25°C IF=5A n=20pcs 950 100 900 10 AVE:887.5mV 850 1 0 5 10 15
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RFN-10 T2D DIODE T2D 14 DIODE RFN10 DIODE T2D 40 DIODE T2D 6 DIODE AVE24 R1120A

T2D 85 diode

Abstract: T2D 65 DIODE 4.5 A Repetitive Avalanche Energy Q 2.3 mJ Peak Diode Recovery dv/dt Q 6.5 , Test Condition - @@ V ds=80V,Vgs=5V, nC Id=5.6A See Fig 6 & Fig 12 ® ® Source-Drain Diode Ratings and Characteristics Symbol Min. Typ. Max. Units Characteristic u Continuous Source Current Ism Pulsed-Source Current 0 - - 20 Vsd Diode Forward , t a g e VÅ" , Drain-Source Valtage [VI M Rs
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T2D 85 diode T2D 65 DIODE T2D 8 diode T2D 54 DIODE T2D DIODE 45 23/ZENER DIODE t2d 54 IRLS510A D3T23

T2D 24 DIODE

Abstract: T2d 43 diode nA V ON CHARACTERISTICS ( o 3 N te ^S GM Gate Threshold Voltage VDS= 1 Tj= 125°C ^S0 ) D( N Static Drain-Source On-Resistance 1.5 3 0.7 0.9 2.2 0.013 lD= 250 , to ) (n V6S= 1 0 V , V DS= 5 V n 15 VGS= 10V, lD= 11.5A A 26 S 1220 pF , Time Vdo = 15 V, lD = 1 A, vGN=iov,(^tN = 6 a E Gate-Source Charge ns 16 30 ns , Rev.F 3 4 b cib74 D Q 3 E n O ISfl Electrical Characteristics (Ta =. 25°C unless otherwise noted
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T2D 24 DIODE T2d 43 diode T2d 61 diode T2D DIODE 42 diode T2D T2D 04 DIODE NDT455N

T2D DIODE 02

Abstract: T2D DIODE Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General , T2D â'  14.0±0.5 3)Low switching loss 8.0±0.2 12.0±0.2 Features 1)Cathode common , week factory) Conditions Limits 200 200 Tc=122°C 1/2Io at per diode 60Hz half sin wave , ns Rth(j-c) junction to case ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode , =25°C 100 10 0 5 10 15 20 25 Tj=25°C IF=5A n=20pcs 950 900 850 AVE
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T2D DIODE 02 T2D DIODE 16 T2D 80 diode T2D 80_ diode

T2D DIODE

Abstract: RFN-10 Data Sheet Super Fast Recovery Diode RFN10T2D Applications General rectification Dimensions , T2D 8.0±0.2 12.0±0.2 15.0±0.4 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common Dual type , Unit V V A A C C Tc=122°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value , Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=5A VR=200V IF , TERMINALS:Ct(pF) 1000 Tj=25°C IF=5A n=20pcs 950 100 900 10 AVE:887.5mV 850 1 0 5 10 15
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T2D 6 N diode T2D 75 diode T2D DIODE 60 T2D 1 DIODE T2D 80

T2D 22 diode

Abstract: T2D 56 DIODE % levels) - Ic o n = 1.5 A ; â'"l Bon â' l Bof f â' 6 m A ;- V qc = 30 V turn-on time turn-off time , max. 4 6 A A - ' cm max. Total power dissipation up to T m|j = 25 °C pto t , BDT60B;60C R1 typ. 6 kJl R 2typ. 100 12 Fig. 2 Circuit diagram. RATINGS Limiting values in , ) Collector current (d.c.) - V ebo - 'c Collector current (peak value) - ' cm Reverse diode , . 5 V max. 4 A max. 6 A A ' r = 'c max. 4 Base current (d.c.) -
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T2D 22 diode T2D 56 DIODE diode t2d 05 T2D 70 diode BDT60 BDT61 BDT61A BDT61B BDT61C A060-1

T2D 62 diode

Abstract: T2D 98 DIODE ,) Turn-Off-Time W (ton=td(o +tf) iD Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time , 6 6 7 8 Gate Threshold Voltage vs. T* Voson^T«*); lo=1nA V s= o o Va Vos=25V; T*,=25â'˜C Forward Characteristics of Reverse Diode Typical Gate Charge Characteristic lp=f(Vso); W , «10 » 10 0 0 9 [n C ] â'" > Safe Operation Area Avalanche Energy Derating ltf=l , 4 r i 'j. i â'" N 4 ¿ L â'" > This specification is subject to change without
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T2D 62 diode T2D 98 DIODE T2D 27 diode 2SK2645-01MR

T2D 96 diode

Abstract: T2D 78 diode ® CHIP CARRIER S * 6 ? t1 2 ,Ì S 3 7 Q D M O lS b GTM â  S 6 T H S-THO M SO N , /366 S C S -T H O M S O N S ISA M S G T H S-THOMSON HEX BUS BUFFER (3-STATE) HC365 , POWER DISSIPATION lc c = 4 ixA (MAX.) at Ta = 25°C â  HIGH NOISE IMMUNITY V n ih = V n il = 2 8 % , OUTPUT IMPEDANCE MOHl = loL = 6 m A (M IN .) â  BALANCED PROPAGATION DELAYS tPLH = tPHL â  WIDE , discharge and transient ex­ cess voltage. (] vcc G 2 3 '~ * L 6* ^ 6V 1 â' '
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T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D 19 diode T2D DIODE 29 M54HC365/366 M74HC365/366 HC366 M54/74HC365 M54/74HC366

T2D DIODE

Abstract: T2D DIODE 64 SYMBOL ran [7 2Ã| Vcc OO [2 g Q7 DO [3 3 07 oi (T a D6 Q1 (J 06 02 [6 n OS D2 [7 DS D3 (T n D4 Q3 ¡T HI Q4 GND Qc 33 CP 3*7 8 13 1* 17 18 DO D1 D2 03 D4 D5 06 D7 CP , 0V TYPICAL UNIT tPLH tpHL Propagation delay CP to Qn C|_ = 50pF; Vcc = 3.3V 3.5 ns C|N Input , , 4, 7, 8,13,14,17,18 D0-D7 Data inputs 2, 5, 6, 9,12,15,16,19 Q0-Q7 Data outputs 1 MR Master Reset , Output as it was I 711082b â¡075?c1? bOb â  May 11, 1994 6 - 24 This Material Copyrighted By Its
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T2D DIODE 64 T2D DIODE 32 T2D DIODE 46 t2d 63 diode IN T2D DIODE T2D DIODE 63 74LVT273 LVT273 74LVT

T2D DIODE 34

Abstract: Diode T2D od he hd 'od °d T L /F /9 5 3 3 -5 QbQb- G N D - 10 11 - C P T L /F /9 5 3 3 -6 7-300 b S , W [El CD B S E l s- 1 0«- 2 ·o«- 3 h»- 4 'ib - 5 o b 6 Q b- 7 G N D- 8 16 _ v cc 15 - o d , /1.0 1.0/1.0 50/33.3 50/33.3 Input I|H/ I il O utput Io h / I o l 20 n A / - 0 . 6 mA 20 jaA/ -0.6 mA , V|N = 74F 3.75 - 0 .6 -1 5 0 38 38 34 34 f*A mA mA mA mA mA mA 0.0 Max Max Max Max Max , minimum ESD protection- 'F399 Ordering Code: see section n Commercial 74F398PC 54F398DM (Note 2
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T2D DIODE 34 Diode T2D od T2D 95 diode T2D DIODE 06 T2D 34 T2D 06 DIODE 54F/74F398 54F/74F399 74F398SC 54F398FM 54F398LM 74F399PC

T2D 70 diode

Abstract: T2D DIODE â  LTC1320 flà s o iu T c m n x im u m R n u n G s P R C K R G â'¬ /O R D â'¬ R M F O R fllR T IO n Supply Voltage (Vqd) . 7V Supply Voltage (Vss , TXDEN H SD E RXEÃ' [ T m -i>i Ï8 V d 1 d ORDER PART NUMBER ¡ 3 TXD¡6] TXD , ±3.4 Input High Voltage V 3 +10 V V V -7V , Enable to Output Active Cl = lOOpF (Figures 6, 7,15) â'¢ 30 100 ns to, Ldis Receiver
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RS422/RS562 RS422 RS562 RS562/RS562 LT1054

T2D 24 DIODE

Abstract: T2d 43 diode . SIMPLIFIED BLOCK DIAGRAM r FBA b u n a DB11 - DB4 (MSB) DB3 - DBO (LSB) B1/E2 Input , TM 3422b lfl 00074Q3 464 4 -3 0 8 MP7680 J T E X A R « n v PIN OUT , bUT2A Complement o f O utput A 6 NC No Connection 6 NC No Connection 7 VREFA , Output C 30 Input Data Bits 11 (MSB) to 6 IOUT2C Complement of O utput C l0UT2D , utput D Current Output D 31 32 l0U T2D 30 31 CS Chip Select Current Output D
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P7680 QDQ741Q

T2D DIODE 46

Abstract: T2D DIODE 48 Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A 1 j j Input 1 HCl 1 Current Va=Maxâ'ž V|N = 2.7V ±1 pA In Input LOW Current Va.'=Max., V|n , »9 oe, c 5 fct240t 16 u öa, qnd' 10 daj c 6 15 1 db, qba! »11 öb2 C 7 14 h oa, OAaj 12 DA-j E 8 13 3 , 19 : ôêb obaz 3 ib 1 oan 4 17 h ob, ob, c 5 fct244t 16 3 oa, da;, c 6 is 3 ob, ob2c 7 14 h oa2 â¡aac 8 13 h 0b2 os3c 9 12 1 oa, onü c 1u 11 j uö3 fct24ût-6 9â'"44 CYPRESS : Function Table
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T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB

diode t2d 77

Abstract: T2D 21 diode BUFFER * - I- R fbb r FBC V I THREE-STATE BUFFER T-CONTROL LOGIC IC -N , 5 to + 1 2 5 °C Part No. M P 7628JN M P 7628K N M P 7628JS M P 7628K S M P 762 8JP M P 7628K P M , ·o u n c _ , I- -1 -2 3 4 5 loUTIA V REFA G N D R fbc R f BA V DD V r ef c · 28 , ) DB6 1 -c=z = -1 -1 -1 - 6 7 S H 20 6 9 10 11 12 13 14 See 23 Pin , PIN OUT DEFINITIONS PIN NO . 1 NAME D E S C R IP T IO N V qd V refa R fba >0UT1A
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diode t2d 77 T2D 21 diode FBC 320 a BA 4213 T2D 09 diode FBC 320 MP7628 MP7529B P7628

T2D 52 diode

Abstract: T2D 80 diode '¢ Immediate Product Into: (800) 54W132 B U R R - BROW N 5.2 6 8 1 7 3 1 3 b S DD31D?tì T2D Or, Call , ree-p o rt configuration. O n e o f the 7 22 chan n els pro v id es p o w e r to the 3 6 5 0 â'™s input , stage o f tw o 3 6 5 0 â'™s co n n ected in th e tw op o rt configuration. P o w er fo r the o u tp u t , 1.1" x 0.3") DESCRIPTION T he 7 2 2 co n v erts a sin g le 5 V D C to 16V D C in p u t into a p a ir o f b ip o lar o u tp u t voltages o f the sam e v alue as the in p u t voltage. T h e co n v
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T2D 52 diode T2D 00 DIODE

T2D 85 diode

Abstract: FBC 320 four quadrant n u tiplication charac teristics with a separate reference input and feedback resistor , -o - -N T * / * -s , -THREE-STATE BUFFER LATCH B f " THREE-STATE 1 BUFFER , THREE-STATE BUFFER 4 * I bu T 2 c/ bU T2D CONTROL LOGIC - LATCH D ^ dacd , fb (LSB)DBO DB1 DB2 DB3 0B4 DB5 Cl E E E E E E GND V refc R fbc ^ oun c loUT2C^OUT2D n i ï i i ï i n f a ^ a IoUT2A/ I- b u T 2 B *-&- I _ ta u n c buT2
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T2D 87 diode

Abstract: T2D 49 DIODE ) mJ dv/dt Peak Diode Recovery dv/dt ® 55 (See Fig. 30) V/ns Tj t STG Operating , case for 10s) Weight 9.3 (typical) g Electrical Characteristics @ t =2 ° ( n uoh r is s e , , 6 (0.25 in.) from package to source bonding pad. Cjss Input Capacitance â'" 1100 â , - pF V q s - OV, VDS - 25V f = 1.0 MHz See Fig. 22 Source-Drain Diode Ratings and Characteristics © Parameter Min. Typ. Max. â s Continuous Source Current (Body Diode) â
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T2D 87 diode T2D 49 DIODE Rectifier t2d IRHM7130 IRHM8130 1X106 4A55452 IRHM7130D IRHM7130U

T2D DIODE

Abstract: T2D 79 diode ic e s , Inc. 7 6 2 5 T h o rn d ik e R o ad G re e n s b o ro , N C 2 7 4 0 9 , U S A Tel (3 3 6 ) 6 6 4 1 2 3 3 F ax (3 3 6 ) 6 6 4 0 4 5 4 h ttp ://w w w .rf m d .co m F u n c tio n a l B lo ck D , |N = + 1 0 d B m VAPc i 2 = 0 .2 V , P|sj = + 6 d B m Po u t , m a x -5 d b < p o u t < p o u t , eet the GSM system specs under those conditions, a PIN diode a ttenuator co n nected to the input can , 6 C O G s e r ie s * * J o h a n s o n 5 0 0 R 0 7 F s e r ie s C20 . A ll o th e r s a r e P a n a
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T2D 79 diode Diode T2D 79 t2d 68 diode value t2d 17 diode DCS1800 DCS1900 F2140 1700M F2138 RF2140

T2D 79 diode

Abstract: T2D diode ic e s , Inc. 7 6 2 5 T h o rn d ik e R o ad G re e n s b o ro , N C 2 7 4 0 9 , U S A Tel (3 3 6 ) 6 6 4 1 2 3 3 F ax (3 3 6 ) 6 6 4 0 4 5 4 h ttp ://w w w .rf m d .co m F u n c tio n a l B lo ck D , i 2 = 0-2V , P |N = + 1 0 d B m VAPc i 2 = 0 .2 V , P|sj = + 6 d B m Po u t , m a x -5 d b < p o , =+10dBm POUT=-10dBm to +33dBm DC to 2 MHz V A P C 1,2 = 2 -6 V V A P C 1,2 = 0 V V A T _ E N = 2 -6 V > V A P , load VSWR 6:1, P o u T < + 3 3 d B m DC Current at P0 ut , max Idle Current, P|N
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T2D DIODE 79 diode T2D series T2D 26 diode
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