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SCS206AMC ROHM Semiconductor Rectifier Diode, Schottky, 1 Phase, 1 Element, 6A, 650V V(RRM), Silicon Carbide, TO-220AC, TO-220FM, 3/2 PIN visit Digikey Buy
SCS208AMC ROHM Semiconductor Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 650V V(RRM), Silicon Carbide, TO-220AC, TO-220FM, 3/2 PIN visit Digikey Buy
SCS220AMC ROHM Semiconductor Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 650V V(RRM), Silicon Carbide, TO-220AC, TO-220FM, 3/2 PIN visit Digikey Buy
SCS215AMC ROHM Semiconductor Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 650V V(RRM), Silicon Carbide, TO-220AC, TO-220FM, 2 PIN visit Digikey Buy
SCS212AMC ROHM Semiconductor Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 650V V(RRM), Silicon Carbide, TO-220AC, TO-220FM, 3/2 PIN visit Digikey Buy
SCS210AMC ROHM Semiconductor Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 650V V(RRM), Silicon Carbide, TO-220AC, TO-220FM, 3/2 PIN visit Digikey Buy

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T0-220FM

Catalog Datasheet MFG & Type PDF Document Tags

2SD2103

Abstract: 2SD2102 , Da/R/Di 2SD2093 (T0-220FM) BCE, Da/R 2SD2094 8* 5 -0.5 (HRT) BCE 2SD2096 150 , ) ECB 2SD2100 (T0-220FM) BCE, Da/R 2SD2101 (T0-220FM) BCE, Da/R 2SD2102 (T0-220FM) BCE, Da/R 2SD2103 (T0-220FM) BCE, Da/R 2SÃ2104 (T0-220FM) BCE, Da/R 2SD2105 (to-220fm) BCE, Da/R 2SD2106 (T0-220FM) BCE 2 SD 2107 (to-220fm) BCE, Da/R 2SD2108 (T0-220FM) BCE, Da/R 2SD2109 (TO-220FM) BCE, Da
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OCR Scan
2SD2091 2SD2092 2SD2097 2SD2098 2SD2099 SC-63 TO220FM 2SD2104

5252 F 1108

Abstract: 4550J TO-126M 5 TO-92M 5 TO-92 5 TO-92 6 TO-92M 10 TO-220FM 10 T0-220FM 10 TO-220FM 9 TO-220FM 10 T0-220FM , TO-220FM 10 TO-220FM 10TO-220FM 10 TO-220FM 10 T0-220FM 9 TO-220FM 10 TO-220FM 10 TO-220FM 10 TO , 10 T0-220FM 2323 9 TO-22QFM 2337 2342 8 TO-3P 5 TO-92 2415 6 UPAK 2423 2484 5 TO-92M 8 TO-126FM 2491 , LDPAK 11 T0220FM 11 T0220CFM 10 UPAK 10 MPAK 10 MPAK 11 TO-220CFM 12 LDPAK 10 TO-92M 10 UPAK 10 MPAK 10 , -3P 12 TO-3P 11 TO-220FM 11 TO-22QFM 11 TO-220FM 12 LDPAK 12 LDPAK 12 LDPAK 12 LDPAK 12 TO-3P 11 T0-220FM
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OCR Scan
5252 F 1108 4550J 12015C 0345A TO220CFM E1113 T0-220AB 220AB 1016R 1023R 1024R 1025R

2SD2334

Abstract: 2SD2350 0.8 12 (T0P-3D) 2SD2335 3* 10 0.1 0.8 12 (T0P-3D) 2SD2336 2SB1530 (T0-220FM , (T0-220FM) BCE 2SD2344 (T0-220F) Da 2SD2350 250* 5 -0.01 3. 5* (DMT) EBC 2SD2351
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OCR Scan
2SD2294 2SD2295 2SD2296 2SD2297 2SD2298 2SD2299 2SD2334 2SD2333 ZSD2361 2SD2328 2SD2363 2SD2312

2SB1376

Abstract: 2SB1370 -220FM) BCE, Da/R 2SB1389 (T0-220FM) BCE, Da/R 2SB1390 (T0-220FM) BCE. Da/R 2SB1391 , (T0-220FM) BCE, Da/R 2SB1401 (TO-220FM) BCE, Da/R 2SB1402 (TO-22QFM) BCE. Da
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OCR Scan
2SB1369 2SB1370 2SB1371 2SB1372 2SB1373 2SB1375 2SB1376 2sd2083

2SJ299

Abstract: mosfet 740 2000 T0-220FM 2SJ295 ±20 -30 35 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1951 60 25 35 0.043
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OCR Scan
2SJ317 2SJ278 2SJ299 2SJ279 2SK1949 2SK1950 mosfet 740 2SJ292 2sj298 2SJ294

2SD2094

Abstract: HITACHI 2SD2094- Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBQ 7 V Collector current â c 8 A Collector peak current 'C(peak) 12 A Collector power dissipation Pc 2 W Pc1 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 C to E diode forward current 'o'1 8 A Note; 1. Value at Tc = 25cC, T0220FM 1
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OCR Scan

V-05S

Abstract: I175 HITACHI 2SJ175 SILICON P CHANNEL MOS FET HIGH SPEED POWER SWITCHING â  FEATURES â'¢ Low On-Resistance â'¢ High Speed Switching â'¢ Low Drive Current â'¢ 4 V Gate Drive Device â'" Can be driven from 5 V source â'¢ Suitable for Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive â  ABSOLUTE MAXIMUM RATINGS (Ta = 25°C} (T0-220FM) I Le m Symbol Haling Unit Drain-Source Voltage V05s -60 V Gate-Source Voltage VCiS ±20 V Drain Current Io -10 A Dram Peak Current ¡VC > * -40 A
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OCR Scan
2SJ172 V-05S I175 OPAC ID--10 VDS--50 VBS--10V
Abstract: HRW26F Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features · Low forward voltage drop. (VF=0.55V max) · High reverse voltage. (VR=40V max) · Full molded fin enables easy insulation from heat sink. A ADE-208-156B -
OCR Scan

2SJ176

Abstract: 2SJ173 2SJ176 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features â'¢ Low on-resistance â'¢ High speed switching â'¢ Low drive current â'¢ 4 V gate drive device â'" Can be driven from 5 V source â'¢ Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline T0220FM 1. Gate 2. Drain 3. Source This Material Copyrighted By Its Respective Manufacturer 2SJ176 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit
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OCR Scan
2SJ173 Hitachi Scans-001

2sc2899 transistor

Abstract: 2sc4739 -2 -3 T0-220FM 2SD2107 60 70 4 1 - 2SD2337 150 200 2 3 2SD2344 350 7 1.5 DPAK 2SC4499 400
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OCR Scan
2SC2899 2SD781 2SD975 2SB566 2SB566A 2SC2612 2sc2899 transistor 2sc4739 2SC2613 GD1377

2SJ222

Abstract: Hitachi Scans-001 2SJ222 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features â'¢ Low on-resistance â'¢ High speed switching â'¢ Low drive current â'¢ 4 V gate drive device â'" Can be driven from 5 V source â'¢ Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline T0220FM 1. Gate 2. Drain 3. Source Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer 2SJ222
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OCR Scan
2SJ221

2SK1778

Abstract: 2SK1776 0.095 0.055 0.065 12 80 300 860 T0220FM 2SK1777 ±20 15 25 0.075 0.095 0.055 0.065 12 - - 860
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OCR Scan
2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1094 2SK1778 2SK1776 2SK1665 2SJ236 2sj217 2SK1154

2sc5083

Abstract: pine alpha st-100s arakawa chemical *S,DTC1 *S) ATR , ATL , FTR , FTL , T092 , T092L , T092LS , T0220SD , T0220FP , T0220FN , T0220FM
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OCR Scan
2SC4010 2SC1740S 2SC1809S 2SC2058S 2SC2926S 2SC4043S 2sc5083 pine alpha st-100s arakawa chemical 2SC4044S 2SC401 2SC5083

2SC3365 -TO3

Abstract: 2sc2820 350 1 2SD1527 1000 - 0.5 5 - 2SB1392 -60 -70 -4 -1 2SB1530 -150 -200 -2 -3 T0-220FM 2SD2107 60
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OCR Scan
2SC2816 2SC2898 2SC2979 2SC4697 2SC3365 -TO3 2sc2820 2sc4741 TRANSISTOR 2SD2290 2SD476 2SD476A 2SD1136

2SK1778

Abstract: 27.145 - 400 2SK1094 60 15 25 0.075 0.095 0.055 0.065 12 80 300 860 T0220FM 2SK1777 ±20 15 25 0.075
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OCR Scan
2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 27.145 2SJ247 2SK1301

2sj177

Abstract: 2sk1301 300 860 T0220FM 2SK1777 ±20 15 25 0.075 0.095 0.055 0.065 12 - - 860 2SK1095 25 30 0.05 0.06
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OCR Scan
2sj177 2SK97-2 2SK1862 2SK1155 2SK1156 2SK1157 2SK1158 2SK1313

2SK1950

Abstract: 2SJ292 2000 T0-220FM 2SJ295 ±20 -30 35 0.045 0.06 0.033 0.043 25 200 740 3300 2SK1951 60 25 35 0.043
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OCR Scan
2SJ300 2SJ290 2SJ291 2SK1919 2sk mosfet transistor 2sk 2SJ192 2SJ293 220FM
Abstract: same die N-channel: 2SK971 (T0-220A B ), 2SK1094 (T0-220FM ) P-channel: 2SJ173 (TO-220AB), 2SJ176 (TQ -
OCR Scan
6AM13 TQ-220FM
Abstract: same die N-channel: 2SK970 (T0-220A B), 2SK1093 (T0-220FM ) P-channel: 2SJ172 (TO-220AB), 2SJ175 (TQ -
OCR Scan
4AM14

2SK1275

Abstract: 44^205 0013264 7Tb â HIT4 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING â  FEATURES â'¢ Low On-Resistance â'¢ High Speed Switching â'¢ Low Drive Current â'¢ No Secondary Breakdown â'¢ Suitable for Switching Regulator and DC-DC Converter â  ABSOLUTE MAXIMUM RATINGS (Ta=25°C) 1. Cite 2. Drain 3. Source (Dimensions in mm) (JEDEC T0-220FM) Item Symbol Rating Unit Drain-Source Voltage Voss 900 V Gate-Source Voltage Vgss ±20 V Drain Current Id 2 A Drain Peak Current lût. tnlu
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OCR Scan
2SK1275 2SK1275- G0132
Abstract: HITACHI 2SD2094- Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBQ 7 V Collector current â c 8 A Collector peak current 'C(peak) 12 A Collector power dissipation Pc 2 W Pc1 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 C to E diode forward current 'o'1 8 A Note; 1. Value at Tc = 25cC, T0220FM 1 -
OCR Scan
ADE-208-161 HRW37F 0220F
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