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Part Manufacturer Description Datasheet BUY
HIGHEFFPMPDOCK-REF Texas Instruments High Efficiency Portable Media Player (PMP) Docking Station visit Texas Instruments
LM2753SDX/NOPB Texas Instruments High Power Switched Capacitor Voltage Converter/Flash LED Driver 10-WSON -40 to 85 visit Texas Instruments Buy
LM2753SD/NOPB Texas Instruments High Power Switched Capacitor Voltage Converter/Flash LED Driver 10-WSON -40 to 85 visit Texas Instruments Buy
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
LM336Z-2.5/LFT7 Texas Instruments Voltage Reference Diode 3-TO-92 visit Texas Instruments

T-75 A HIGH VOLTAGE DIODES

Catalog Datasheet MFG & Type PDF Document Tags

Mixer S042P

Abstract: S042P deviation of +75 kHz. When the voltage controlled oscillator (VCO) is used in a PLL detector, this will , before applying it to the VCO or a smaller voltage can be used to produce the 75 kHz deviation. The , voltage in the CA3102E as high as possible while having a small value for R1 and a tuning voltage for , OSCILLATORS A common application where hyperabrupt diodes offer superior performance is in the generation and detection of FM signals at 10.7 MHz for high quality broadcast equipment. The VHF diodes are
Narda Microwave
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Mixer S042P S042P T-75 A HIGH VOLTAGE DIODES LM1496 single phase variable frequency drive circuit dia CA3102

SMD resistors 1806

Abstract: SMD zener diode 202 , Single Schottky Diodes very low forward voltage drop; high forward current capability; VR = 20 V, IF , Diodes very low forward voltage drop; high forward current capability; VR = 40 V, IF = 1100 mA DO , , Single Schottky Diodes very low forward voltage drop; high forward current capability; VR = 20 V, IF = 1100 mA SL03 Small Signal, Single Schottky Diodes very low forward voltage drop; high , Schottky Diodes very low forward voltage drop; high forward current capability; VR = 40 V, IF = 1100
Vishay Intertechnology
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SMD resistors 1806 SMD zener diode 202 1N4148WS CZA04S CZA06S IFCB-0402 ILC-0402 IMC-0402 HPC0201A
Abstract: UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES ® TM RoHS Compliant Versions Available , / UM7100 / UM7200 HIGH POWER PIN DIODES ® TM RoHS Compliant Versions Available . , Page 2 UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES ® TM RoHS Compliant Versions , / UM7200 HIGH POWER PIN DIODES ® TM RoHS Compliant Versions Available T YPI CAL RP VS VOLT , : 978-937-3748 Page 5 UM7000 / UM7100 / UM7200 HIGH POWER PIN DIODES ® TM RoHS Compliant Microsemi
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UMX7202B UMX7000

varactor tripler

Abstract: step recovery diode files makes these diodes an ideal choice for low order multiplier circuits. They are available in a , cation and as a comb generator. Alpha has a complete line of multiplier diodes for each case mentioned , Recovery Diodes 5-6 0 5 8 5 4 4 3 A L PH "¡33 - - . T. - D" 1 W ^505443 w w w i w i n , A-Moae AL P H A IN»/ S E M I C O N D U C T O R Diodes, A-Mode Chips A-Mode Multiplier Diodes Reverse Breakdown Voltage Min. (V) 30 30 45 45 60 75 75 100 100 125 125 150 175 Junction Capacitance Cutoff at -6V
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varactor tripler step recovery diode Frequency Tripler varactor D5A5443 DVA4580A DVA4580B DVA4580C DVA4580D DVA4580E

comb generator

Abstract: Multiplier Diodes Reverse Breakdown Voltage Mln.(V) 30 30 45 45 60 75 75 100 125 125 125 150 175 Junction , A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips Features High Efficiency High Power Handling High Reliability Description Alpha A-Mode diodes are oxide passivated, epitaxial , upconverters (N=2), while Amode multiplier diodes are principally used when high power, high efficiency and , as a comb generator. Alpha has a complete line of multiplier diodes for each case men tioned above
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comb generator CVA1116-06 CVA1116-12 CVA1116-18 CVA1116-24 CVA1116-30 CVA1116-36

HP STEP RECOVERY DIODES

Abstract: construction of varactor diode A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips 05A5443 0001374 0=14 â  ALP , Reliability Â¥ Description Alpha A-Mode diodes are oxide passivated, epitaxial silicon mesa designs , =2), while A-mode multiplier diodes are principally used when high power, high efficiency and wide bandwith (10 to 20%) is required. The SRD is used mainly for high order (N^4) multiplication and as a comb generator. Alpha has a complete line of multiplier diodes for each case mentioned above (consult factory).
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HP STEP RECOVERY DIODES construction of varactor diode varactor diode application impulse generator microwave M92A CVA1116-42 DVA6738-06 DVA6738-12 DVA6738-18 DVA6738-24 DVA6738-30

ods-1072

Abstract: MA4P1250 MIC A fß K O M HIPAXTMSeries PIN Diodes ^ T O T - 1 5 High Power PI IN I Diodes MA4P4000 , requiring high power handling and low distor tion. HIPAX PIN diodes incorporate a fully passivated PIN diode chip resulting in extremely low reverse leakage current. ALL HIGH VOLT AGE HIPAXTMPIN DIODES ARE , HIPAX PIN diodes are designed for use in a wide variety of switch and attenuator applications from HF , PIN Diodes 4ÔE D 5^42214 DODIISS m e 7 - 0 ^ - / S ' Voltage Ratings and
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MA4P1250 ods-1072 MA4P4302 rjp 302 MA4P7104 MA4P7006 MA4P4300 MA4P7000 MA4P7100 MA4P1200 ODS-1059

LN4890

Abstract: 1N4895A DESCRIPTION This series of Microsemi 400mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE , : Microsemi uses a potentiometric method of zener voltage measurement on certified reference diodes. Zener , repeatability of ±0.1 microamp1. A .Transfer of diodes from high temp, operating , request. Ultra-Stable Certified Reference Diodes can be used in any circuit that requires a stable , to be used in circuits requiring an extremely high degree of voltage time stability such as those in
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LN4890 1N4895A H 48 zener diode 1N4890 1N4890A 1N4891 1N4890-1N4895 1N4890A-1N4895A PPM/1000 M/1000 1N4893 1N4895
Abstract: tap rectifier in DPAK package. Offering excellent high temperature stability and low forward voltage , : 08 = 2008) WW = Week (01 - 53) SBR is a registered trademark of Diodes Incorporated. SBR660CTLQ Document number: DS36093 Rev. 1 - 2 1 of 6 www.diodes.com October 2012 © Diodes , VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 2 Typical Forward Characteristics SBR is a , www.diodes.com October 2012 © Diodes Incorporated SBR660CTLQ 10,000 f = 1MHz CT, TOTAL CAPACITANCE Diodes
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J-STD-020 MIL-STD-202 SBR660CTLQ-13
Abstract: GC4510 â'" GC4533 CONTROL DEVICES High Voltage NIP Diodes ® TM RoHS Compliant K EY FEAT U RES The GC4500 series are high voltage, high power (anode base) NIP diodes. These high , GC4510 â'" GC4533 CONTROL DEVICES High Voltage NIP Diodes ® TM RoHS Compliant DEV I CE , Page 2 GC4510 â'" GC4533 CONTROL DEVICES High Voltage NIP Diodes ® TM RoHS Compliant , , 978-442-5600, Fax: 978-937-3748 Page 3 GC4510 â'" GC4533 CONTROL DEVICES High Voltage NIP Diodes  Microsemi
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MIL-PRF-19500 2002/95/EC GC4400 GC4200 GC4300

fairchild micrologic

Abstract: 10-JK ) consists of three high voltage, high threshold hex inverters which offer extremely good D.C. and A.C. Noise Immunity. These circuits are useful in applications involving a high noise environment or high voltage , High Voltage Operation · · · Vcc Range 12 to 20 V. · Utilizes inexpensive external input diodes to facilitate a high density building block approach and very high Logic Fan-In where desired. · High D.C. Noise , HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC.® INTEGRATED CIRCUITS COMPOSITE DATA SHEET A
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fairchild micrologic 10-JK 9110 D9109 F 9109 M3700 MOS37QO 10--JK

968be

Abstract: high reliability situations. The 272 case style is a low cost enclosure close to the physical size of , High High High A .50 .35 .20 .50 .35 .20 .50 .35 .20 S C-X Ku S C-X Ku S C-X Ku .10 .10 .05 , (X-band) 16.00 GHz (Ku-band) IF - 30 MHz NF,f - 1.5 dB 5. Voltage breakdown is measured at I r - 10 /¿A. 6 , ., MA4E980L-270 is a XBand High Barrier Tee in ODS-27Q. M/ArCOM SEMICONDUCTOR PRODUCTS OPERATION · , SMALL PHYSICAL SIZE FOR MICROSTRIP MOUNTING HIGH RELIABILITY CLOSELY MATCHED JUNCTIONS FOR HIGH
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968be
Abstract: www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available S T Y L E â'D R â , www.MICROSEMI.com UM4000 / UM4900 HIGH POWER PIN DIODES RoHS Compliant Versions Available , : A ï'§ Voltage ratings to 1000 V www.MICROSEMI.com The UM4000 and UM4900 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable , well in excess of applied reverse bias voltage. Both series have been fully qualified in high power Microsemi
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UMX4000 UMX4900

CDSL4148-G

Abstract: CDSL4448-G COMCHIP Small Signal Switching Diodes SMD Diodes Specialist CDSL4148-G/4448-G Reverse Voltage: 75 Volts Power Dissipation: 500 mW RoHS Device Features MiniMELF (SOD-80) -Design for , Units VRRM 75 V Reverse voltage VR 75 V Forward current IFM Averaged , 50 0 25 50 75 100 125 150 175 Ambient Temperature (°C) Reverse Voltage , Switching Diodes SMD Diodes Specialist Suggested PAD Layout Mini-MELF SIZE (mm) A 3.40 0.134
Comchip Technology
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CDSL4148-G CDSL4448-G mini-MELF Comchip sod-80 CDSF4148/4448 CDSU4148/4448 MIL-STD-750 QW-B0012
Abstract: two digits of year, ex: 07 = 2007 WW = Week (01 - 53) SBR is a registered trademark of Diodes , Forward Characteristics SBR is a registered trademark of Diodes Incorporated. SBR1045CTLQ Document number: DS36094 Rev. 1 - 2 2 of 6 www.diodes.com October 2012 © Diodes Incorporated , ), AVERAGE FORWARD CURRENT (A) 1 10 VR, DC REVERSE VOLTAGE (V) 100 150 6 125 Note 5 5 , Maximum Avalanche Power Curve, Per Element 0.1 SBR is a registered trademark of Diodes Incorporated Diodes
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SBR1045CTLQ-13
Abstract: See Note (a) 0.5 0.0 0 25 V DS Drain-Source Voltage (V) Safe Operating Area 75 , A Product Line of Diodes Incorporated ZXMS6005DG ADVANCE INFORMATION 60V N-CHANNEL SELF , Code ® IntelliFET is a trademark of Diodes Incorporated, registered in the United States and , www.diodes.com September 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMS6005DG , Protection Continuous Input Voltage Continuous Input Current @-0.2V ≤ VIN ≤ 6V Continuous Input Diodes
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AEC-Q101 DS32247

ZXGD3102

Abstract: ZXGD3102T8 voltage when the Drain current is high to ensure full MOSFET enhancement 6. If a short condition occurs , load voltage. The load can be tens of amps. Dissipation in the diodes can be high! The ZXGD3102 is , A Product Line of Diodes Incorporated ZXGD3102T8 ACTIVE OR'ING CONTROLLER Description The , a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the
Diodes
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ZXGD3102T8TA
Abstract: Tested. ï'· Patented SBR technology provides a superior avalanche capability than schottky diodes , ) SBR is a registered trademark of Diodes Incorporated. SBR660CTLQ Document number: DS36093 Rev. 2 - 2 1 of 5 www.diodes.com October 2013 © Diodes Incorporated SBR660CTLQ Maximum Ratings , Characteristics SBR is a registered trademark of Diodes Incorporated. SBR660CTLQ Document number: DS36093 Rev. 2 - 2 2 of 5 www.diodes.com October 2013 © Diodes Incorporated SBR660CTLQ 10,000 f Diodes
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Abstract: is a low dropout regulator with high output voltage accuracy, low RDSON, high PSRR, low output noise , 0 Output Current Max 1.7 Input Voltage Unit +85 °C July 2014 © Diodes , Input Voltage V IN (V) 5 July 2014 © Diodes Incorporated AP7341 Typical Characteristics , Temperature Topt (â"ƒ) 75 Output Voltage vs. Temperature AP7341-25 2.55 2.54 2.53 2.52 2.51 , 50 75 Temperature Topt (â"ƒ) 100 Output Voltage vs. Temperature AP7341-33 3.35 3.34 Diodes
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X2-DFN1010-4 DS36523
Abstract: 5.25 0 Output Current Max 1.7 Input Voltage Unit +85 °C May 2014 © Diodes , © Diodes Incorporated AP7341 Typical Characteristics (cont.) Supply Current vs. Input Voltage , 36 34 34 32 32 30 -25 0 25 50 Temperature Topt (â"ƒ) 75 Output Voltage vs , Current vs. Input Voltage AP7341-33 -50 -25 0 25 50 75 Temperature Topt (â"ƒ) 100 May 2014 © Diodes Incorporated AP7341 Dropout Voltage vs. Output Current AP7341-18 650 600 Diodes
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