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T-39-13 Datasheet

Part Manufacturer Description PDF Type
T3913 Semicon Components 30A Iout, 400V Vrrm Fast Recovery Rectifier Scan
T3913R Semicon Components 30A Iout, 400V Vrrm Fast Recovery Rectifier Scan

T-39-13

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: _ _ T-39-13 RATINGS Limiting values in accordance with the Absolute Maximum System , _ BUZ14_ â'" _ ObE D â  bb53131 0014S7T f â  l T-39-13 1 REVERSE , _ N AMER PHILIPS/DISCRETE ObE D â  bb53^31 ODm i a O M â  T-39-13 100 A. h 80 , OL eT D â  bb53131 0014561 b . 267 T-39-13 PowerMOS transistor_ _ N AMER PHILIPS/DISCRETE QtE D â  BUZ14 hbS3^31 0014532 f â  l T-39-13' 268 -
OCR Scan
53T31 IEC134 BUZ14---------------------------- 0D145
Abstract: PHILIPS/DISCRETE ObE D â  bb53131 DOlHbSS 1 â  r T-39-13 RATINGS Limiting values in , N AM ER PHILIPS/DISCRETE ObE D â  ^ ^ 53^ 31 DOmbSb 0 â  T-39-13 REVERSE DIODE , BUZ45A_ _ ' DbE D â  bb53T31 0014bS7 2 L T-39-13 - . ifc Fig.3 Typical output , T-39-13 PowerMOS transistor N AflER PHILIPS/DISCRETE _ _ BUZ45A_ DbE D â  bbSBTBl D014bST t â  [ 345 t T-39-13 PowerMOS transistor _ _ -
OCR Scan
LLS3T31 0014LL0

BUZ54A

Abstract: t03 package transistor pin dimensions PIER PHILIPS/DISCRETE ObE D â  bfa53131 001M7E5 M â  PowerMOS transistor ~ BUZ54A â"¢ T-39-13 , /DISCRETE OLE I) â  b PowerMOS transistor BUZ54A T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb , transistor "" BUZ54A â'¢ T-39-13 "V \ k S , = 25 °C. 413 N AMER PHILIPS/DISCRETE PowerMOS transistor â¡ LE D bbSBTBl Q0147SS T BUZ54A T-39-13 , ImA. 414 N ANER PHILIPS/DISCRETE DhE D â  bbS3T31 0D14751 1 â  PowerMOS transistor BUZ54A T-39-13
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OCR Scan
t03 package transistor pin dimensions transistor C413N BUZ54 4-10N 7Z63885 S3T31
Abstract: fransistor bbS3T31 â¡â¡14751 3 . T-39-13 RATINGS Limiting values in accordance with the Absolute , bb53131 0014782 5 BUZ331 T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C unless , PowerMOStransIstor DbE D â  bb53T31 0014763 7 uvzssi , T-39-13 A Fig.3 Typical output ,   BUZ331 T-39-13 Fig. 6 Typical drain-source on-state resistance r DS(ON) = M d ) _ , . â  bb53c m 0014765 â¡ â  BUZ331 T-39-13 471 N AMER PHIL IP S/D IS CR ETE -
OCR Scan
T0218AA

BUZ24

Abstract: \ N Af1ER PHILIPS/DISCRETE ObE D bbS^Bl BUZ24 PowerMOS transistor ODmSTl 3 â  T-39-13 , transistor BUZ24 T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C unless otherwise , BUZ24 PowerMOS transistor nr^rTER^PHILTpS/DISCRETE OLE D â  ^ 5 3 ^ 3 1 OOlMbOl A T-39-13 , N AUER PHILIPS/DISCRETE _ BUZ24 Qb~ D â  _ bbS3T31 Q014bD2 T â  t T-39-13 k , _ BUZ24_ â  bbSBTBl 0D14b03 1 â  [ T-39-13 . 289 PowerMOS
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OCR Scan
Abstract: s is to r DbE D : â  bbSBTBl O Q m T B T 4 BUZ348 _ ~ T-39-13 RATINGS Limiting , 001474D 0 BUZ348 Pow erM O S tra n sisto r T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb , '" T-39-13 Fig.3 Typical output characteristics I q =f(V£)s) Parameter: Vq s >80 ps pulse test , â¡â¡ 1 4 7 4 2 4 BUZ348 P o w e rM O S tra n sisto r T-39-13 -4 0 0 40 80 120 , OD14743 L BUZ348 T-39-13 429 N AMER PHI LIP S/ DI SCR ET E ObE D â  ^53131 0014744 -
OCR Scan
TQ218AA BUZJ48

buz349

Abstract: FowerMUS transistor ^ â  bbSBTBl 00147Mb 1 BUZ349 T-39-13 RATINGS Limiting values in , T E PowerMos transisfor 7 " ObE D â'" â  BUZJ49 bbS3T31 Q014747 3 â  T-39-13 , ANER PHILIPS / D I S CR E T E PowerMOS transistor b b S a ^ l 0014743 S BUZ349 T-39-13 Fig , O O m ? ^ T-39-13 Tj(°C) Fig. 7 Drain-source on-state resistance r DS(ON) =f(Tj , â  fc,b53131 D0147SQ 3 U U ZiW T-39-13 436 ObE D N AMER PHILIPS / D I S CR E T E
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OCR Scan
00147M S3131
Abstract: H E 0 I MÃSS4SE INTERNATIONAL ÃGDÃ74S 3 | Data Sheet No. PD-9.588A T-39-13 , Devices 4555452 0000743 5 I â  INTERNATIONAL RECTIFIER T-39-13 Absolute Maximum , 4 Ã5 5 4 5 2 INTERNATIONAL DQQÃ"744 IRFP244, IRFP245 Devices 7 | RECTIFIER T-39-13 , ) PEH T-39-13 Fig. 4 â'" Maximum Safe Operating Area THERMAL RESPONSE (Z,.hj C) Fig. 3 , aOGfl?4t 0 | IRFP244, IRFP245 Devices INTERNATIONAL r e c t i f i e r T-39-13 z < K -
OCR Scan
C-496 C-497 C-498
Abstract:   bbSBTBl 00m7fifl t . BUZ384 T-39-13 RATINGS Limiting values in accordance with the Absolute , BUZ384 T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C unless otherwise specified , AMER PHILIPS/DISCRETE PowerMOS transistor ' ' ' ObE D I bbS3i31 00147T0 4 BUZ384 T-39-13 ,   bb53T31 BUZ384 ODI N? 1 ! ! â"¢ T-39-13 477 b â  xtxz* N ANER PHILIPS/DISCRETE ObE D Pow erM O S tran sistor â  bb53T31 Q0147TS S â  BUZ384 T-39-13 478 N AMER -
OCR Scan
0D14713
Abstract: ObE D â  bfc.S3T31 0D147SS 4 BUZ54A â"¢ T-39-13 RATINGS Limiting values in , BUZ54A T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C unless otherwise specified , â' â  (^53131 001^727 f l BUZ54A T-39-13 Fig. 3 Fig.4 Typical output , /DISCRETE PowerMOS transistor DtE D â  LhSBTBl 0014726 T H BUZ54A â' T-39-13 w 0 , PHILIPS/DISCRETE PowerMOS transistor â'¢ DL.E D â  bbS3T31 0D1472T 1 â  BUZ54A T-39-13 -
OCR Scan
00147BH

buz350

Abstract:   bb53T31 0Q147S3 T â  BUZ350 ~ T-39-13 I I UNIT V V V A A A W °C TYP. 3,0 20 , FowerMOS transistor â'" â  ^^53=131 D014754 â¡ â  BUZ350 ~* T-39-13 REVERSE DIODE , ObE D â  BUZ350 (^53131 0D14755 2 â"¢ T-39-13 Fig.3 Typical output characteristics , T-39-13 N AMER PHILIPS/DISCRETE PowerMOS transistor - OLE D â  bbS3^31 0014757 b â  BUZ350 ' T-39-13 443 N AMER PHILIPS/PISCRETE OLE D PowerMOS transistor â  bbSSTBl
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OCR Scan
001475L 00147SS

BUZ326

Abstract: transistor BUZ326 T-39-13 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134 , This Material Copyrighted By Its Respective Manufacturer PowerMÃS transistor BUZ326 ^ " T-39-13 , 20 0 BUZ326 T-39-13 50 100 °C 150 - To Fig. 2 Power dissipation Pq = ffT^j. 30 'o A 20 , Its Respective Manufacturer PowerMOS transistor BUZ326 T-39-13 Fig. 6 Typical drain-source , /DISCRETE ObE D â  b(353^31 00147b4 3 PowerMOS transistor BUZ326 T-39-13
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OCR Scan
DD147 13UZ326

IRFPE40

Abstract: 20V n-Channel Power MOSFET HE O I MñSSMSa G0Qâfl3t, 1 | INTERNATIONAL RECTIFIER Data Sheet No. PD-9.578A T-39-13 , Maximum Ratings T-39-13 ftrameter IRFPE40 IRFPE42 Units Id ® TC = 25°c Continuous Drain Current 5.3 , T-39-13 Source-Drain Diode Ratings and Characteristics IRFPE40, IRFPE42 Devices INTERNATIONAL , . 3 â'" Typical Saturation Characteristics HE D | 4flSSMSE QQDfiaa1! 7 | INTERNATIONAL RECTIFIER T-39-13 , Devices T-39-13 10 ffi UJ CJ 2 < H- vpg > 100v SOms pulse test. tj=2 / r
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OCR Scan
20V n-Channel Power MOSFET c589 3A diode International Rectifier C-587 N-Channel 600V MOSFET C-585 C-590 C-591 C-592

BUZ211

Abstract: transistor N AMER PHILIPS/DISCRETE BUZ211 ObE D â  bbSB'IBl 0D14b70 S â  T-39-13 REVERSE , â  0019171 7 â  L Fig.3 T-39-13 . . Typical output characteristics I p = f(V p s , _ N AMER PHILIPS/DISCRETE BUZ211 ObE D _ bbS3131 D014b?2 1 T-39-13 358 PowerMOS , 3 0 T-39-13 359 PowerMOS transistor_ â'" _ N AMER PHILIPS/DISCRETE QbE D â  BUZ211_ _ ^53=131 0014b74 E â  T-39-13 360
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OCR Scan

1RF540

Abstract: RF540 D I 4âSS452 000045^ ô I T-39-13 INTERNATIONAL RE CT IF IER IRF542, IRF543 25 17 100 150 1.0 ±20 , , IRF541, IRF542, IRF543 Devices T-39-13 INTERNATIONAL R E C T I F I E R VDS, DRAIN-TO-SOURCE , | IRF540, IRF541, IRF542, IRF543 Devices INTERNATIONAL R E C T I F I E R T-39-13 uj OE UJ Z , I E R T-39-13 Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 - Typical , , IRF542, IRF543 Devices INTERNATIONAL R E C T I F I E R VDS T-39-13 Fig. 14a - Unclamped
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OCR Scan
IRFS41 RF540 1RF540 mosFET 1RF540 IRF540 application note Application Note of IRF540 IRF540 International Rectifier IRFS43 C-211 C-212 C-213

BUZ54A

Abstract: BUZ54 â¡â¡i4?as T-39-13 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134) SYMBOL , OGmjHbb^" PowerMÃS transistor BUZ54A T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C ,   ^53^31 D0m7E7 fi PowerMOS transistor " " BUZ54A â  T-39-13 s , /DISCRETE OLE D PowerMOS transistor bhSBTBl Q0147SÃ" T BU/654A T-39-13 10 S) rDS(ON) 8 , /DISCRETE DhE D â  ^53131 0Qm72cl 1 PowerMOS transistor BUZ54A T-39-13 i Cu
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OCR Scan

2N6770

Abstract: 13002 l /2N6770 N-Channel Power MOSFETs, 12 A, 450 V/500 V Power And Discrete Division T-39-13 Description , | 0D27fi2b S 2N6769/2N6770 ' -' . ' T-39-13 Electrical Characteristics (Tc = 25°C unless otherwise noted , | 34^^74 DDE7Ã27 7 j 2N6769/2N6770 T-39-13 I Electrical Characteristics (Cont.) (Tc = 25°C unless , SEMICONDUCTOR Û4 DET| 34b1b?4 ODSTÃSfl 1 | . 2N6769/2N6770 T-39-13 Typical Performance Curves (Cont , * 2-41 FAIRCHILD SEMICONDUCTOR 04 DE| 34(3=11374 â¡â¡E7fl2cl G 2N6769/2N6770 T-39-13 Typical
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OCR Scan
2N6769 2N6770 13002 l W10t W10TH-

BUZ36

Abstract: T-39 Absolute Maximum System (IEC 134) T-39-13 ^ SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT vDs Drain-source , transistor_BUZ36- N AMER PHILIPS/DISCRETE DtE D â  ^53^31 DOIMbgfl b â  F T-39-13 REVERSE DIODE RATINGS AND , \ s s so 100 °C 150 â'"- rc Fig,2 Power dissipation Pjj = f(Tmb). T-39-13 â *D , on-state resistance RDS(ON)= fVD) Parameter: Vqs: Tj = 25 °C. r T-39-13 0,24 rDS(ON) , AMER PHILIPS/DISCRETE ObE D bb53T31 OQlMb31 b T-39^-13 101 nF 5 10° 5 10' 5 10
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OCR Scan
BUZ36 T-39

BUZ351

Abstract: Copyrighted By Its Respective Manufacturer PowerMOS transistor ~ & BUZ351 T-39-13 RATINGS Limiting values , ~~ BUZ351 â'" T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmt> = 25 cC unless otherwise specified , BUZ3S1 T-39-13 140 W 120 100 80 60 40 20 0 "V s V s v > s s \ s s , ¬ PowerMOS transistor BUZ351 T-39-13 Fig. 6 Typical drain-source on-state resistance RDS(ON) =f(lD , bbSBTBl 00m771 0 PowerMOS transistor BUZ351 T-39-13 ^DS Fig. 11 Continuous drain current Ijj = f(Tmb
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OCR Scan

T0218AA

Abstract: BUZ356 _ â'" BUZ356 T-39-13 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC , transistor â"¢ BUZ356 "" T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C unless otherwise , /DISCRETE ObE D latiSBIBl Ã014fl25 à PowerMOS transistor BUZ356 T-39-13 , T-39-13 Fig. 7 Drain-source on-state resistance rDS(ON) =f(Tj) Conditions: Iq = 3,8 A; Vqs= 10 V , â  hfa53131 DD14Ã"E7 1_1I PowerMÃ"S transistor - - " â'" â  T-39-13 io\ nF 5
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OCR Scan
BUZ-356

LD 757 ps

Abstract: G753 g0gci77fc> 3 | Post-Radiation international rectifier IRH450 Device T-39-13 Radiation Performance of Rad , dggt? s | international rectifier Post-Radiation T-39-13 10 â'"}iâ'"â'"iâ'"I I I I 111-1â'"iâ'"I I I , Exposure © G-754 Post-Radiation 11e d | mflss4sa 00ch77ö 7 | international rectifier IRH450 Device T-39-13 , Post-Radiation T-39-13 2.40 miâ'"imi RADIATION TEST CONDITIONS: "VGS = VDS = 0 VOLTS IO« 2 5 1013 NEUTRON , | mäss4sa ggq^ao 5 | international rectifier IRH450 Device T-39-13
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OCR Scan
LD 757 ps G753 12V 5A rectifier G-760 G-761

DIODE S4 83A

Abstract: irf340 4055455 dOOTlMS 1 I INTERNATIOftlAL R E C T I F I E R T-39-13 IRF342, IRF343 8.3 5.2 33 125 , | 4flSSMS2 000^14b 3 I 1 IRF340, IRF341, IRF342, IRF343 Devices T-39-13 INTERNATIONAL , Devices INTERNATIONAL R E C T I F I E R T-39-13 15 80ps PUL SE T EST r " 1C v > (AMPERES) 12 - , I E R IRF340, IRF341, IRF342, IRF343 Devices T-39-13 1 .5 Fig. 6 - Typical , * T-39-13 Qg . TOTAL GATE CHARGE (nC) Fig. 10 - Typical Capacitance Vs. Draln-to-Source
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OCR Scan
DIODE S4 83A DIODE M4A IRF34 T0-204AA G-126 G-127 G-128

g598

Abstract: irfh260 INTERNATIONAL RECTIFIER T-39-13 HEXFET® TRANSISTORS IRFH25à N-CHANNEL POWER MOSFETs 200 Volt, 0.090 Ohm , 4assqs2 000^17 s I IRFH250 Device " â  international rectifier t-39-13 Absolute Maximum Ratings , 4fl5s4sa dggitilfl 7 i « â  â  â  IRFH250 Device international rectifier T-39-13 50 i- Vi 9v - s0 , -595 IRFH250 Device he d | MflssMsa oooitn 1 | T-39-13 international rectifier 10-3 2 5 io-2 2 5 10-i I , 160 G-596 he d | môs5452 ooqitiho s | international rectifier IRFH250 Device T-39-13 I
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OCR Scan
g598 irfh260 9411a G595 A220 DLP irfh25u 1/4-28UNF-2A G-597 G-598

IRH254

Abstract: G-741 Device Pre-Radiation © â  â'¢ T-39-13 Pre-Radiation Absolute Maximum Ratings_ Parameter IRH254 , the drain and source electrodes (see fig. 11a). In general, a Table 1. Low Dose Rate IRH254 Device T-39-13 , MflSS4Sa aoacJ?fe,S 7 I Post-Radiation T-39-13 Fig. 2 â'" Typical Response of Transconductance Vs. Total , -742 Post-Radiation he o I 4flss4sa aocmbb â¡ | INTERNATIONAL RECTIFIER IRH254 Device T-39-13 s 1 103 5 2 102 , Post-Radiation INTERNATIONAL RECTIFIER T-39-13 0.300 0.270 S 0240 Å" 0.210 0.180 0.150 â'" Â»â  Ã® 11
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OCR Scan
G-741 Alps 250k G741 40554 ALPS 102 104/ 250V mf S54S2 G-748 MA554 G-749

IRF045

Abstract: RF045 international rectifier Absolute Maximum Ratings t-39-13 Paramo! Of IRF044 IRF045 Units ID @ TC = Continuous , international rectifier t-39-13 Source-Drain Diode Ratings and Characteristics faameter Type Min. Typi Max , Devices he d I 4855452 0001037 *ï | international rectifier t-39-13 100 UJ cc tu UJ ce tr 3 20 , IRF044, IRF045 Devices international rectifier t-39-13 Flg.- 6 â'" Typical Transcofiductance Vs. Drain , D | 4Ã55452 00Q1Q3Ï E | international rectifier t-39-13 5000 coss - ^ds + cgs cgd 1 lcgs + cgd
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OCR Scan
IRFQ44 RF045 R1LV 100-C
Showing first 20 results.