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SN74ABT373DBE4 Texas Instruments ABT SERIES, 8-BIT DRIVER, TRUE OUTPUT, PDSO20 visit Texas Instruments
SN54AHCT373WR Texas Instruments AHCT/VHCT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDFP20, CERAMIC, FP-20 visit Texas Instruments
SN54BCT373J Texas Instruments BCT/FBT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDIP20, 0.300 INCH, CERAMIC, DIP-20 visit Texas Instruments
CD74ACT373M96G4 Texas Instruments ACT SERIES, 8-BIT DRIVER, TRUE OUTPUT, PDSO20, GREEN, PLASTIC, SOIC-20 visit Texas Instruments
CD74FCT373M96 Texas Instruments BiCMOS FCT Interface Logic Octal Transparent Latches with 3-State Outputs 20-SOIC 0 to 70 visit Texas Instruments
CD74HCT373M96G4 Texas Instruments High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125 visit Texas Instruments

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T-37-/3

Catalog Datasheet MFG & Type PDF Document Tags

KSR1011

Abstract: KSR2011 SAMSUNG SEMICONDUCTOR INC KSR2011 14E D 17^142 0007107 *l | PNP EPITAXIAL SILICON TRANSISTOR -'T-3-7- ,3 SWITCHING APPLICATION (Bias Resistor Built In) â'¢ Switching Circuit, Inverter, Interface circuit Driver circuit â'¢ Built in bias Resistor (R=22K!>) â'¢ Complement to KSR1011 ABSOLUTE MAXIMUM RATINGS (Ta=25?C) Characteristic Symbol Rating Unit Collector-Base Voltage Vcso -40 V Colector-Emitter Voltage VcEO -40 V Emitter-Base Voltage Vebo -5 V Collector Current lc -100 mA Collector Dissipation Pc
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KSR1201

Abstract: KSR2201 Dissipation Po 300 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -55-150 °C T-37- (3 TO-92S 1. Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Symbol Test , SAMSUNG SEMICONDUCTOR INC^ IME D | 0007135 3 j KSR2201 PNP EPITAXIAL SILICON TRANSISTOR , -0.5 V Input On Voltage Vi(on) Vce=-0.3V, lc=â'"20mA -3 V Input Resistor Ri 3.2 4.7 6.2 KQ , -0.3 -1 -3-S -10 -30 -60 -100 WmA), COUECTOR CURRENT DC CURRENT OAIN 1 3 S 10 SO 100 300 600 1000
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KSR1201 transistor R 405 T-37-

KSR1006

Abstract: KSR2006 _14à 0 | 711,4142 0007010 1J KSR2006 PNP EPITAXIAL SILICON TRANSISTOR T-37- /3 -10000 -6000 -3000 , SAMSUNG SEMICONDUCTOR INC- 14E 0 ( 7^414:2 00070=}? T | KSR2006 PNP EPITAXIAL SILICON TRANSISTOR â'"" 37 13 SWITCHING APPLICATION (Bias Resistor Built In) . â'¢ Switching Circuit, Inverter, interface circuit. Driver circuit â'¢ Built in bias Resistor (R,=10KQ, R,=47Kil) â'¢ Complement to KSR1006 , -300 :VÅ"-5V -R,-!0K '.Riâ'"t7K -0.3 -1 -3 -5 -10 -30 -50 -100 Uâ"¢A). COLLECTOR CURRENT POWER
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OCR Scan

1C10

Abstract: KSR1205 VrtOfTXV). IHPUT OFF VOi-TAOE T-37- |3 OC CURRENT GAIN -500 -300 g -50 3 -30 » i 1 Mil , TRANSISTOR ÌT-SH- )3 ' SWITCHING APPLICATION (Bias Resistor Built In) â'¢ Switching Circuit, Inverter , . Emitter 2. Collector 3. Base ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Symbol Test Condition , Gain-Bandwidth Product b , Vce= â'"10V, lc=-5mA 200 MHz Input Off Voltage Vi(off) Vce=-5V, Ic-100,/A -0,3 V , -5v: / / / 1 -3 -5 -10 -30 -60 -100 lc(mA), COLLECTOR CURRENT POWER DEBATING 350 Z 300 £ 2 260 a S a» Â
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KSR2205 KSR1205 1C10 1c10 TRANSISTOR
Abstract: SANYO SEMICONDUCTOR FC111 CORP 22E D 7Tî707t Q0D73Ã"0 ñ T-37-/3 # PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications ©3079 (with Bias Resistances R1=22kfl, R2=22kO) Features â'¢ On-chip bias resistors (Ri = 22kfl,R2= 22kQ) â , .3079-1/2 633 S AN Y O SEMICONDUCTOR CORP 22E D 7^7071= 0007301 T FC111 T -3 7-1 3 Sample Application Circuit Input ON-state voltage : 3V or greater JL Input OFP-state -
OCR Scan
T-37-/3 2SA1342 4139MO
Abstract: SANYO SEMICONDUCTOR CORP 52E D 7TT7Q7b â¡00737t FC109 b T-37-/3 P N P , Collector Current 1(3 Peak Collector Current 1 CP Collector Dissipation Pc Total Dissipation pT , max unit -0 .1 pA -0 .5 pA - 7 0 -1 1 3 -1 6 0 pA 50 MHz 200 pF 5.1 -0 .1 -0 .3 V -5 0 V -5 0 V -0 .8 -1 .1 -1 .5 V -1 .0 -1 .9 -3 .0 V 29 kfl 15 22 0.9 1.0 1.1 Vqbâ'"â , â  nryi«rp«fT â r 1 f 3*.095 1-9 0-16 r *=4 Kl U1 C2 82 02 -
OCR Scan

2SK350

Abstract: 2Sk350 HITACHI HITACHI/ÃOPTOELECTRONICS} -SSÃSrmí?^TTTTyPTUErarrRON l us ; "73 DF| MMTtaüS DDIOGSD 2 | 73C 100 20 -T-37-/3 SILICON N-CHANNELMOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER , Ultrasonic Power Oscillators. â  ABSOLUTE MAXIMUM RATINGS (Tâ'ž=2h °C) 1.Gate 2. Drain (Flange) 3 , ACHW (OPTOELECTRONICST MAXIMUM SAFE OPERATION AREA 3 le» 3« IIXJ 300 1,000 Drain to Source Voltage , ,iii Yùs = 10V -Pulse Test 1.0 3 10 30 Drain Current Io (A) 73 DF| M4e]bSOS Q01G0E1 H p 73C 10021
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2SK349 2SK350 2Sk350 HITACHI P73C m12g 7v25

NX DIODE SM

Abstract: 2N6164 Power MOSFETs_â'" â¡ 1 2N6764 _01e 18401 DE| 307SDfll ÃG1Ã4D1 S D T-37-/3 I- Electrical , 3875081 g e solid state 01 DeT| 3fi7SDfil DDlflMDD 3 | - File Number 1590 Power MOS Field-Effect Transistors 0 1e 18400 D r'-jy-/3 _ Standard Power MOSFETs 2N6764 N-Channel Enhancement-Mode , » Fig. 3 - Typical Output Characteristics I 1 I 1 < S I ) I V0!. GATE TO SQUÃ"CE VOLTAGE IV0LT1] Fig , >Source Voltage 3875081 g e solid state Standard Power MOSFETs _ 2N6764 0 1 e 18403 d t~3? 01 DE
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OCR Scan
NX DIODE SM 2N6164 MOSF6 q2N6764 TQ-204AE 7N676 I50OCUAX

RFH35N08

Abstract: RFH35N10 | 3fi75Göl aaia2D3 1 Ã"^äID_state_^ 01e 18203 -T-3-7-/3 RFH35N08, RFH35N10 I I0 IOO GRAIN-TO-SOURCE , - Power vs. temperature derating curve for all types. Fig. 3 - Typical normalized gate threshold
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OCR Scan
92CS-J374I TA9481A TA9481B 92CS- 92CS-JTI7I

SCR 2062

Abstract: 2SC3863 SANYO SEMICONDUCTOR CORP SEE D 2SA1502, 2SC3863 2018A 7n?07k 0007332 fl T-37-/3 PNP/NPN , 1000 g h h 3 M O U U o o too 2*0 u eu o 160 120 P h O Iç - Vi(off) V C E = = 5V , .< -F or PNP mlnu 3 sign Is omitted. 0.4 0.5 0.6 0.7 08 0.9 Input OFF Voltage,Vj^jjj - V PC - Ta , : Source Di Drain SANYO: CP 37 This Material Copyrighted By Its Respective Manufacturer SANYO , -[2062] unit: mm â'" 4.5 â'" 0.4 °'5 "L 0â'" *1.5
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SCR 2062 7086A s2e transistor 2SC3863CNPN

cp 035 sanyo

Abstract: 2sa1196 SANYO SEMICONDUCTOR CORP SSE D 2SA1496, 2SC3859 S2106A 7Tì707ti 000733D 4 â  T-37-/3 35 , 3317KI/6256AT,TS No.2106-1/2 583 SANYO SEMICONDUCTOR CORP E2E D ESE D I 2SA1496/2SC3859 3 >H i ? Q , _ 7 â'" a â'" Fo «â'" â'¢ P -i i m h1 Im ia algn la oaitted. ^ 2 3 5 i ma , -37-13 T-35-11 , « f-10-0.1 i.0.MJ â'"1.1â'"( 0.« G: Gate S : Source Di Drain SANYO: CP 37 SANYO
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OCR Scan
cp 035 sanyo 2sa1196 la 1001 sanyo transistor npn d 2058 iso sanyo Sanyo marking 2SA1196 2SA1M96
Abstract: C /H C T 37 3 SENICOND â¡ â¡ 2 5 tm LIMITS TEST C O N D IT IO N S L E to Qn , T IC B U R N -IN 1 GROUND Vcc (6V) 1,3,4,7,8,10,11,13, 20 14,17,18 OPEN CD 54 H C /H C T 37 3 IHAS SECTOR ^ 25 >C HC Vcc V 2 4.5 6 2 4.5 6 2 4.5 6 2 4.5 6 2 , Logic ICs SECTOR CD54HC373/3A CD54HCT373/3A Octal Transparent Latch, 3-State â'˜Â¡P&-G7-/I . T he R C A CD 54H C373 and CD 54 H C T 3 7 3 are high speed Octal Transparent Latches m -
OCR Scan
430SE71 D02S17D 54LS373 CD54HC374/3A CD54HCT374/3A

DV2840S

Abstract: 0Q004 3 ld - drain current (amps) co a. S < cc cc U o < cc a D T-37'/3 AS DEI Sb4550S â¡â¡â¡â , P H I INC 850 00452 D 7^-3^-/3 TYPICAL PERFORMANCE CURVESâ'"CONTINUED (25° C unless otherwise specified) A5 Te1 Sti42SDS 0000452 t T ZQUT (Series) vs Frequency 10 8 G 6 (-3 O , Frequency Rin VD = 28 - "DO = o- pOUT = 2A 40W xin -3 -2 z 3 -1 10 20 30 40 60 80 100 150 200 FREQUENCY (MHz) SMALL SIGNAL 2-PORT PARAMETERS 2
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OCR Scan
DV2840S 0Q004 0Q004S3 B-180

a12t

Abstract: transistor a12t SANYO SEMICONDUCTOR CORP S5E D 2SA1589, 2SC4120 2018A TTìTOTb 00G73SS 3 T-37-/3 T-35-U PNP/NPN Epitaxial Planar Silicon Transistors , = â'" (Fo r P *P. nil ius sign la oaitted.) 1000 S M-* a 3 a I u u a 100 Collector , : Gate S : Source Di Drain SANYO: CP 37 SANYO SEMICONDUCTOR CORP E2E D Case Outlineâ'"[2057] unit
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OCR Scan
a12t transistor a12t 2SA15 k 2059 TRANSISTOR 2SA15 PNP PHP I
Abstract: 7 4 H C /H C T 37 3 MSI O C TA L D-TYPE T R A N SP A R EN T LATCH; 3-STATE FEATURES T Y P IC A L · · · · · 3-state non-inverting outputs fo r bus oriented applications C o m m on 3 , ra m . 620 September 1993 Octal D-type transparent latch; 3-state 7 4 H C /H C T 37 3 , .5 6 .0 F ig . 10 September 1993 621 7 4 H C /H C T 37 3 MSI_ j I I D C , /H C T 37 3 MSI AC W A V EFO R M S f l , ÌNPUT f " - 'P H I - Q , OUTPUT · 1,1 I Ì + -
OCR Scan
Z932S1

BUK655-500A

Abstract: dlp afe 1000 FET BUK655-500A BUK655-500B BUK655-500C GENERAL DESCRIPTION QUICK REFERENCE DATA "T-37-/3 , mm Net Mass: 2g Pinning: 1 = Gate 2 = Drain 3 = Source 4,5 max 1.3 0,9 max (3x) 2,54 2,54 5,9. min 15,8 max 0,6 2,4 3- Fig. 1 T0220AB; drain connected to mounting base. Notes 1 , \ \ \ 1 0 20 40 60 SO 100 120 140 Tmb/ C Fig.3. Normalised continuous drain current. ID% = 100 , " -60 -40 -20 O SO 40 60 BO 100 120 140 Tj/'C Fig. 10. Normalised drain-source on-state resistance. 3 =
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OCR Scan
dlp afe 1000 S3131 BUK655 T0220

SAI SOT23

Abstract: H3 marking MOTOROLA SC -CDIODES/OPTO} 34 I)F|b3b?S5S 0030577 1 | j â'"e3672Â¥TMÃTÃRÃLÃ" SC CDIODES/OPTO) SOT23 (continued) 34C 38277 D T" 37" >3 device no MMBA956H3,4,5,6 small-signal pnp transistor TOP c VIEW [ I i=r B ü" E â'¢ Designed for general-purpose amplifier and switching applications. MAXIMUM RATINGS Device Marking MMBA956H3 H3 MMBA956H4 H4 MMBA956H5 H5 MMBA956H6 H6 Rating Symbol Value Unit Collector-Emitter Voltage VcEO -40 Vdc Collector-Base Voltage VcBO -60 Vdc Emitter-Base
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OCR Scan
SAI SOT23 H3 marking marking H6

IRF FET

Abstract: BUK657 design for inductive loads. T-37-/3 QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. UNIT yDS â'¢d , ns MECHANICAL DATA Dimensions in mm Net Mass: 2g Pinning: 1 = Gate 2 = Drain 3 = Source 10,3_ max 3,7 h L 3,5 max not tinned l-H max 1 (2x) ^ 1.3 â'"Lâ'" _! 2,8 T ir-f ^r -3,s mm , 140 Tmb/ C Fig.3. Normalised continuous drain current. ID% = 100-Ip/lp 2S-c= f(Tâ'ž*); conditions , -1 / -i â'"/ / ! 2 3 VGS/V
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BUK657-400A BUK657-400B BUK657 IRF FET 2D701

RFK30N12

Abstract: C039 , RFK30N15 â¡ 1 DE| 3ä7SGÃl Doiam 3 01E 18199 D T-37-/3 4 ' 8 10 100 1000 DRAIN-TO-SOURCE VOLTAGE , TEMPERATURE (Tc>â'" *C 92cs-37i36 Fig. 2 - Power vs. temperature derating curve for all types. Fig. 3 - , >=30 A Vos=10V - 3 - 3 Static Drain-Source On Resistance rDsion)1 Id=15 A Vos=10V - 0.075 0.075 CI , types. JUNCTION TEMPERATURE (Tj)~*C 92C9-34399 Fig. 3 - Typical normalized gate threshold voltage as
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OCR Scan
RFH30N12 RFH30N15 RFK30N12 C039 Scans-00121260 18198 9ZCS-53741 TA9578A TA9578B

J374

Abstract: RFH35N08 | 3fi75Göl aaia2D3 1 Ã"^äID_state_^ 01e 18203 -T-3-7-/3 RFH35N08, RFH35N10 I I0 IOO GRAIN-TO-SOURCE , - Power vs. temperature derating curve for all types. Fig. 3 - Typical normalized gate threshold , for all types. JUNCTION TEMPERATURE (Tj)â'"*C 92CS-Ã7I69 Fig. 3 â'" Typical normalized gate , › â¡ 3875081 G E SOLID STATE 0 1E 18208 D 7^3^-/3 _ Standard Power MOSFETs RFK35N08, RFK35N10 l0
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OCR Scan
J374 92CS-37T68 2CS17W7 PMP411A CS-S7I74 92CS-373T9
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