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CC1190EM915-RD Texas Instruments CC1190EM 915MHz Reference Design visit Texas Instruments
PMP7870 Texas Instruments Hot Swap Controller Design visit Texas Instruments
AUTO-ECALL-REF Texas Instruments Automotive eCall Reference Design visit Texas Instruments
AM335X-TAB Texas Instruments Enterprise Tablet Reference Design Kit visit Texas Instruments
CC1100E-CC1190EM-RD Texas Instruments CC1100E-CC1190EM 480MHz Reference Design visit Texas Instruments

Siliconix FET Design Catalog

Catalog Datasheet MFG & Type PDF Document Tags

transistor FN 1016

Abstract: siliconix fet followed in the © 1979 Siliconix incorporated 6-14 design of the Siliconix 2N4867A FET, and noise , derived from it. Readers are invited to refer to the Siliconix FET catalog for full geometry performance , depends upon the basic design of the FET, and upon the proximity of the drain current operating point to , /Cjss ratio is required. Recommended Siliconix FET types for such applications are the 2N4416 (NH , of 20 MHz for i^ computed via direct measurement of Rp for the Siliconix FET Type2N4117A. For
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transistor FN 1016 siliconix fet Siliconix FET Design Catalog siliconix FET DESIGN Siliconix JFET Siliconix "fet"

siliconix fet

Abstract: Transistor E112 FET N-Channel FET Design Catalog © 1979 Siliconix incorporated Printed In U.S.A. Siliconix incorporated reserves , Siliconix how to use the FET Cross Reference and Index The following examples Illustrate how the FET Cross , (Gate) VMOS (Vertical MOSFET) 1-1 © 1979 Siliconix incorporated FET Cross Reference and Index H , © 1979 Siliconix incorporated 2-2 FET Cross Reference and Index (cont'd.) n Siliconix , 2N5019 3-31 5-39 © 1979 Siliconix Incorporated FET Cross Reference and Index (cont'd.) ff
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Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet bfw10 terminals E112 jfet JFET BFW10 SPECIFICATIONS 4856a mosfet 867-C 1130669-CSEL-BR J-23548 K24123 NZ3766 53-C-03

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 Incorporated Printed in U.S.A. Siliconix Introduction Design Alternatives Data Sheets Geometry , Resistance = Junction to Case Thermal Resistance Siliconix How to Use the Sm all-Signal FET Cross R , infringement. Warning Regarding Life Support Applications Siliconix products are not sold for applications , Siliconix. Such agreement will require the equipment manufacturer either to contract for additional reliability testing of the Siliconix parts and/or to commit to undertake such testing as a part of its
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e304 fet e420 dual jfet BFW10 JFET jfet e300 JFET TIS88 TIS26 K28742 44449SILXHX

auto turn off battery charger using LM317

Abstract: lm317 so-8 in this catalog, harmless against all damages. Table of Contents Vishay Siliconix INTRODUCTION , Power IC Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA , catalog has been carefully checked for accuracy, and though it is believed to be correct, no warranty , . Warning Regarding Life Support Applications Not all products listed in this catalog are generally , Siliconix Power/Industrial Drivers Selection Table . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Vishay Siliconix
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auto turn off battery charger using LM317 lm317 so-8 LM317 auto charger LM79XX Siliconix mosfet guide LM317 SOT223 24v UCC2801D P2801DY UCC2801PW P2801DQ UCC2802D P2802DY

siliconix vmp4

Abstract: irf540 27.12 MHz amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc ARRL Technical Advisor This , High-Efficiency Tuned RF Microwave Power Amplifier: Improved Design Equations," Proceedings of the IEEE , circuit operation, improved-accuracy explicit design equations for the published low-order Class-E , design equations did not include the dependence of output power (P) on load-network loaded Q (QL). As
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siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 99CH36282C KE67VWU

PA 0016 PIONEER

Abstract: MPF104 catalog. CX 'Siliconix in c o rp o ra te d Table of Contents â  Alphanumeric Index â , . DMOS FETs: To enhance the performance levels of our FET line, Siliconix offers FETs made with our , C ^S T ilico ix n in c o rp o ra te d Introduction Siliconix designs and manufactures , operated microprocessor. Depending on the application, Siliconix provides both discrete and integrated , signals and power at the output; and 3) convert and control the systemâ'™s power supplies. Siliconix is
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PA 0016 PIONEER MPF104 Pioneer PA 0016 transistors br 6822 I9951D V01000J MIL-S-19500 BS9000 K28560

Cherokee International Power

Abstract: Cherokee International distribution services and socket-level design support by making it a point to understand total system requirements. Countless customer engagements have shown that a one-size-fits-all approach to design support , technical solution recommendations are unbiased and impartial »»Real-world design experience is leveraged , , reference designs, tools and design methodologies is utilized Technical Education Avnet's engineering , presentations on-demand »»Local Seminars ­ Interact with design experts from Avnet, component manufacturers
Avnet Catalog
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Cherokee International Power Cherokee International power supply cherokee Cherokee emerson UPS ONLINE EMERSON rectifier

factors on which internal internal resistance of a cell depends experiment

Abstract: Simple PSpice Models Let You Simulate Common Battery component level solutions being employed by manufacturers are also reviewed and alternative design level , , and then discharging the bank through a lowR(DS)ON FET to the device under test. The FET prevents , configurations is large and contributable to differences in cell design and packaging. Using the approximate , Output Capacitor Current 10 Output Capacitor Voltage -0 I (C5) V (3) 20 3.0 Design Level , will increase the reliability of the circuit design. The following table indicates surge current test
AVX
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factors on which internal internal resistance of a cell depends experiment Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V LAMBDA linear Voltage Regulator 100NS 5M994-N

Simple PSpice Models Let You Simulate Common Battery

Abstract: 220 microfarad 12v capacitor component level solutions being employed by manufacturers are also reviewed and alternative design level , , and then discharging the bank through a lowR(DS)ON FET to the device under test. The FET prevents , configurations is large and contributable to differences in cell design and packaging. Using the approximate , Output Capacitor Current 10 Output Capacitor Voltage -0 I (C5) V (3) 20 3.0 Design Level , will increase the reliability of the circuit design. The following table indicates surge current test
AVX
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220 microfarad 12v capacitor inductors 33 micro henry 104 TANTALUM capacitor 330 micro henry inductors 10 micro henry MEPCO electra

transistor cross reference

Abstract: MPT3N40 INSULATORS · . . · 0 · · TRANSISTORS POWER SMALL SIGNAL ARRAYS TRANSISTORS FET TRANSISTORS SCR , TO E X C C U £ N C X E 1 ^C O M PA N Y CONFIDENTIAL The contents of this catalog are FOR , . ANY UNAUTHORIZED USE MAY CONSTITUTE A THEFT. PURPOSE AND USE This catalog is not intended to be a specification document by In cluding all characteristics of the parts listed. It is a catalog with parts , new design or are so new that their characteristics may yet be changed. We sug gest you call the
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transistor cross reference MPT3N40 Westinghouse SCR handbook sje389 LT 8224 ZENER DIODE N9602N

hp laptop battery pinout

Abstract: hp laptop battery pack pinout Pietkiewicz Richard Markell DESIGN FEATURES The LTC1257 Provides a Complete, Single-Supply, 12-Bit D , HighSpeed, Low-Power Operational Amplifiers . 10 George Feliz DESIGN IDEAS . 17­28 (complete list on page 17) DESIGN INFORMATION Book Review: Power Electronics- Circuits, Devices and , areas of battery-based power-supply design. Housed in 8-lead DIP or SOIC packages, the devices feature , . 31 144k Design Tools . 32 ­ ENABLE DRIVER 161k A1 SLOW
Linear Technology
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hp laptop battery pinout hp laptop battery pack pinout hp laptop charging CIRCUIT diagram S13003 s13001 automatic plant watering block diagram LT1300 LT1301 LT1204 LT1113 D-8057 1-800-4-LINEAR

equivalent data book of 10N60 mosfet

Abstract: MC14016CP provide you with a total system design solution using the latest Harris devices! Electronic Technical , Listing Product Information Design Support Contact Information centapp@harris.com â'¢ Technical , circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to
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equivalent data book of 10N60 mosfet MC14016CP GD4511 CX 2859 SMD an-6466 74AC14 spice 1-800-4HARRIS FAX24-H 1-800-4-HARRIS

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 and PLD replacement Detailed information on convertion to ULC : Device specific information, Design , new metallization layers (U 264 "x" B) or with a modified cell design (U 840 B) Click on the Part , on AC­line for IGBT or 100 % more power from the motor power FET overload indication, line voltage , + 2 Op-Amps SMPS + DC Applications IGBT/FET control timer for AC line at advanced dimmer / motion , Product Datasheet 4 Integrated Circuits Siliconix Power ICs Power Conversion Products
Temic Semiconductors
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UA6538 DC motor speed control using 555 and ir sensor UAA145 U2740B-FP U2840B CQY80 U3750BM U3760MB-FN U3760MB-SD SSO-44 SD-40 U3800BM
Abstract: -V TO 20-V INPUT, 6-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFTâ"¢) FEATURES â , SWIFT Documentation Application Notes, and Design Software: www.ti.com/swift APPLICATIONS â'¢ â , ) 4 dB MHz 500 Output voltage slew rate (symmetric) (1) 1.5 Specified by design, not , voltage when disabled Voltage drop, low-side FET and diode rDS(ON) (1) (2) High side power MOSFET , VIN = 12 V, BOOT-PH = 8 V, IO = 0.5 A 40 V mâ"¦ Specified by design, not production tested Texas Instruments
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TPS54550 SLVS623A ISO/TS16949
Abstract: 20-V INPUT, 6-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFTTM) FEATURES · · · · · · , Thermal Shutdown 16-Pin TSSOP PowerPADTM Package SWIFT Documentation Application Notes, and Design , 2.8 500 % ns VIN = 4.5 V 80% 60 1.0 dB MHz nA V/s Specified by design, not production , drop, low-side FET and diode rDS(ON) (1) (2) High side power MOSFET switch (2) DC conditions and no , Specified by design, not production tested. Resistance from VIN to PH pins. Submit Documentation Feedback Texas Instruments
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JESD22-A114

Abstract: TPS54550 20-V INPUT, 6-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFTTM) FEATURES · · · · , Application Notes, and Design Software: www.ti.com/swift APPLICATIONS · · · · The TPS54550 is a , Specified by design, not production tested. Submit Documentation Feedback nA V/µs TPS54550 , MOSFETS (PH PIN) Phase node voltage when disabled Voltage drop, low side FET and diode rDS(ON) (2 , design, not production tested. Resistance from VIN to PH pins. Submit Documentation Feedback 5
Texas Instruments
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JESD22-A114 TPS54550PWP TPS54550PWPR
Abstract: 20-V INPUT, 6-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFTTM) FEATURES · · · · · · , Thermal Shutdown 16-Pin TSSOP PowerPADTM Package SWIFT Documentation Application Notes, and Design , 2.8 500 % ns VIN = 4.5 V 80% 60 1.0 dB MHz nA V/s Specified by design, not production , drop, low-side FET and diode rDS(ON) (1) (2) High side power MOSFET switch (2) DC conditions and no , Specified by design, not production tested. Resistance from VIN to PH pins. Submit Documentation Feedback Texas Instruments
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JESD22-A114

Abstract: TPS54550 20-V INPUT, 6-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFTTM) FEATURES · · · · , Application Notes, and Design Software: www.ti.com/swift APPLICATIONS · · · · The TPS54550 is a , Specified by design, not production tested. Submit Documentation Feedback nA V/µs TPS54550 , MOSFETS (PH PIN) Phase node voltage when disabled Voltage drop, low side FET and diode rDS(ON) (2 , design, not production tested. Resistance from VIN to PH pins. Submit Documentation Feedback 5
Texas Instruments
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CDRH105-6R8

JESD22-A114

Abstract: TPS54550 20-V INPUT, 6-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFTTM) FEATURES · · · · , Application Notes, and Design Software: www.ti.com/swift APPLICATIONS · · · · Industrial and , Specified by design, not production tested. Submit Documentation Feedback nA V/s TPS54550 , ) Phase node voltage when disabled Voltage drop, low-side FET and diode rDS(ON) (1) (2) High side , 0.5 A 60 VIN = 12 V, BOOT-PH = 8 V, IO = 0.5 A 40 V m Specified by design, not
Texas Instruments
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CDRH105-6R8

Abstract: si7110 20-V INPUT, 6-A OUTPUT SYNCHRONOUS PWM SWITCHER WITH INTEGRATED FET (SWIFTTM) FEATURES · · · · · · , Thermal Shutdown 16-Pin TSSOP PowerPADTM Package SWIFT Documentation Application Notes, and Design , ) (1) 4 Specified by design, not production tested. Submit Documentation Feedback www.ti.com , (PH PIN) Phase node voltage when disabled Voltage drop, low side FET and diode rDS(ON) High side power , V ms 4.6 2.3 5 0.1 10 µA V (2) (3) Specified by design, not production tested
Texas Instruments
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si7110 pl 504 12v 5a dc dc boost converter
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