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STK534U363C-E ON Semiconductor 3 PHASE INVERTER IPM visit Digikey Buy
ST-IPM-6350 Red Lion Controls SIXTRAK IPM 2MRAM,64MDRAM visit Digikey Buy
BP7B-LB Powerex Power Semiconductors KIT DEV INTERFACE FOR IPM visit Digikey Buy
BP7A-LS Powerex Power Semiconductors KIT DEV INTERFACE FOR IPM visit Digikey Buy
PS9513-AX California Eastern Laboratories (CEL) PHOTOCOUPLER IPM GATE DVR 8DIP visit Digikey Buy
PS9513L2-AX California Eastern Laboratories (CEL) PHOTOCOUPLER IPM GATE DVR 8DIP visit Digikey Buy

SiC IPM

Catalog Datasheet MFG & Type PDF Document Tags

BM60011FV-C

Abstract: N mosfet 50v 400A S FLT INA ENA MASK LOGIC OUT2 Q OFF MASK FLT2 Conditions: (ROHM SiC IPM) Vcc1 , are included, reducing design load while contributing to smaller inverters for EVs and HEVs. SiC utilized for high-speed operation Stable driving guaranteed up to 800V/400A output IPM Drive Waveforms , transformer technology enables an isolation voltage of 2500Vrms Soft Turn-OFF (@SCP) SiC FET d BM6103FV-C g BUF s 5V 2µs/div. SiC SBD GND1 PROOUT IN (10V / div.) Vgs (20V/div.) Vds (500V
ROHM
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SSOP-B20W BM60011FV-C N mosfet 50v 400A SiC IPM Inverters for EV coreless transformer Technology 2500V 54F6603E
Abstract: -40 125 â"ƒ SSOP-B20W â  IPM Operating Waveforms (BM6101FV-C) ã'Conditionsã'‰ROHM SiC , % lower leakage current Developed the industryâ'™ first SiC s An ultra-compact large current SiC IPM , SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now oï¬'ers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low , response to the growing demand for SiC products, ROHM has implemented the world's first full-scale, mass ROHM
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56P6733E 1500SG

mosfet based power inverter project

Abstract: MS 1307 mosfet (SiC Devices) IPM Introduction by Mitsubishi Reduction of IGBT operation losses 1985 1st Gen , Present Status And Future Prospects of SiC Power Devices Present Status And Future Prospects of SiC Power Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi , Motto Principal Application Engineer, Powerex Inc., U.S.A. Tatsuo Ozeki Project Manager, SiC , Center, Mitsubishi Electric Corporation, Japan Abstract: At Mitsubishi, R & D work on SiC Power
Mitsubishi
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mosfet based power inverter project MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC

mosfet base induction heat circuit

Abstract: power IGBT MOSFET GTO SCR diode associated with new power semiconductor materials, i.e. SiC High Heat Flux Applications in Power , (IPM) Gate Drive & Protection Integrated Application Specific IPM System in a Package High , switch package · Protection for: IPM V1 + CIN FO Logic level · Overtemperature control · , Reduction 600V 150A Servo Motor Controller IPM Reduced cell pitch & increased density results in , Conventional IPM Current Sensor Rectifier Optocouplers · · · · · Small Servo Drives Pumps
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mosfet base induction heat circuit power IGBT MOSFET GTO SCR diode skiip 33 ups 063 IGCT mitsubishi Cree SiC MOSFET igbt induction heating generator CVN-78
Abstract: 878067-145 andreas.johannsen@vincotech.com VINCOTECH RELEASES NEW IPM SOLUTION - This new IPM solution , flowIPM 1B. This new compact intelligent power module (IPM) integrates power semiconductors for rectifier , comes in a 17-mm high flow 1B housing measuring just 72 mm by 36 mm. Unlike most other IPM designs , equipped with a highly efficient SiC diode. Other options such as pressfit technology or phase-change Vincotech
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Abstract: Power Modules Intelligent Power Module (IPM) with optional PFC New flowIPM family with integrated driver circuit and shunt resistors. flowIPM 1B housing 72 x 36 x 16 mm General Features: â'¢ Output power at 230V input: up to 2kW â'¢ 1~ Rectifier, 3~ Inverter â'¢ Optional PFC circuit with Si or SiC boost diode â'¢ Integrated gate drivers with complete bootstrap circuit â , : 600V/4A PFC: 600V/350mâ"¦ + SiC Diode 1B06IPA010MF 2kW 50 â'" 100 kHz Inverter 600V/10A Vincotech
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1B06INA004SA 1B06INA010SA 1B06IPA004MF 1B06IPA004MC

mosfet equivalent

Abstract: SKiiP 83 AC 12 i t 46 Power Modules (IPM), Power Integrated Modules (PIM, a combination of input rectifier, inverter and , IPM PFC Booster 1~Solar NPC MNPC 113 â'" 125 127 â'" 129 131 132 04 Housing , stray inductance (half-bridge, h-bridge, sixpack, rectifier, PIM (CIB), PIM with PFC, IPM, PFC , manufacturers for semiconductor switches (IGBT, MOSFET, Thyristor, driver) and diodes on Si and SiC , semiconductor manufacturers (inclu ding SiC technology). / Enjoy the mechanical flexibility that comes
Vincotech
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mosfet equivalent SKiiP 83 AC 12 i t 46 mosfet base inverter with chargers circuit 25AC12T4v semikron skiip 83 fy074pa ISO/TS16949- ISO14001-
Abstract: be compact and to have good thermal characteristics. Different IPM concepts are competing with , of the current mega trends in power electronics. Very popular are Intelligent Power Modules (IPM , application, an IPM can bring a lot of unique benefits. Transfer Molded IPMs Very often IPMs are produced , . Fig. 2: IPMs in Thick Film Technology One thick film based IPM is the flowIPM from Vincotech. It , equipped with a SiC diode. This enables PFC switching frequencies > 200 kHz. With higher switching Vincotech
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Abstract: Engineer Vincotech GmbH The ubiquitous Intelligent Power Module, aka IPM, has been a mainstay in motor , package, and high-volume components, and given an automated production line, the IPM has all the , . Vincotech has a new IPM module platform that incorporates all these sections - the flowIPM-1B. It is a , diode-based P953A and SiC boost diode-based P953-A10 both contain a 600V/4A/350mâ"¦ PFC mosfet, utilize a , and SiC boost diode-based P955-A10 use a 600V/10A/190mâ"¦ mosfet alongside a 600V/10A IGBT six-pack Vincotech
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IEC61800-5-1

SiC IPM

Abstract: silicon carbide A N D IN D IC A T O R S D IA G N O ST IC /A N A LY T IC A L EQ U IPM EN T. 02.8(0.11)' · 2.7 , . Max. 2.5 Viewing Angle 201/2 L-934BD Blue Silicon Carbide (SiC) BLU E D IF F U S E D 1.2 60° L-934BT Blue Silicon Carbide (SiC) BLU E T R A N SP A R E N T 3.0 5.0' 20° L-934BC Blue Silicon Carbide (SiC) W ATER CLEAR 3.0 5.0 20° Note: 1. 61/2 is the , +85°C 260°C For 5 Seconds mW mA mA V 1. tslOns. 2. 4mm below package base. BLUE (Sic
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silicon carbide silicon carbide LED L-934YD-5V L-934SRD-5V

IGBT based voltage source converter

Abstract: bi-directional switches IGBT ( DIP IPM ) 1 HEV Inverter ( EV IPM ) -purpose Inverter Gen ( IPM ) -purpose Inverter Gen ( Bipolar ) 0.1 0.01 1980 1990 Note: IPM: Intelligent Power Module DIP-IPM: Dual In-line Package IPM EV-IPM: IPM for EV and/or HEV applications RB-IGBT: Reverse Blocking type IGBT RC-IGBT , SiCApplication SiC Application · Integration Technology · New Packaging Technologies 2020 II. TARGET
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IGBT based voltage source converter bi-directional switches IGBT matrix converter inverters circuit diagram igbt diode matrix diagram

10KV SiC

Abstract: POWEREX DIP-IPM isolation of control signals and isolated power supplies for the IPM's built-in gate drive and protection , external components. BP7A BP7B 4 See Line-Up on page 5. L-Series IPM Line-Up and Interface , an interface between the controller and Powerex IPM design kits, the BCIM board provides PWM signals , capable modules for evaluation of high-voltage silicon carbide (SiC) devices for research and development , for SCRs & IGBTs. However, due to different material properties, power devices fabricated from SiC
Powerex
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POWEREX DIP-IPM westinghouse transistor cross reference induction heating 30khz igbt circuit for induction melting Induction Heating Inverter melting Mitsubishi SiC IPM module
Abstract: conduction t c = si-c Io Unit Rating Unit 33 A 30 RMS Forward Current IF(RMS) Peak , Condition Max. Unit Peak Forward Voltage VFM IpM = 30A Tj = 25°C 0.67 V Peak -
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30KQ50 30KQ60 30KQ50B 30KQ60B
Abstract: Units V uA ns Tj initial ^amb " 25 oC 25 °C 25 °C IpM - 3 A y r Test conditions \ specified , no t and L to mm (typical values). 116 S G S-THQMSON Sic D I 7^2^237 0G021GM 7 r BY , 397 0839 D -08 S G S - T H O M S O N Sic D | 7T5TE37 000E35Ö S | D - [ 590 02358 , D "11 S G S-TH0nS0N SiC D | 59C 02361 TO 220 AB (CB-428) for duo-diodes 23bl S | ` o ' T -
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D0G23S7 CB-33 CB-34 CB-197 CB-227 CB-425

diode lt 0236

Abstract: thomson 237 DT 2 I T j = 100 °C > dir/d t = - 8 0 A / p s j IpM = 200 A M S A THERMAL AND MECHANICAL , sided cooling I s KN ± 10% g 2/6 370 S G S- THOMSON S'IC D 1 7^ 237 ggge!333 s , -227) uninsulated 2,95 Sic D | 7 T 5 T E 3 7 0 0 0 2 3 5 0 D 59C 0 2 3 5 8 DO 220 AB (CB-428) Insulated 0 3 .5 , (CB-428) for duo-diodes SiC D | 59C 0236 1 o ' T S3bl - 3 3 0 S | ` / 4.5 2.5 5 2,95
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diode lt 0236 thomson 237 DT 2 237 thomson 0QE3317 Q0Q2332 CB-262 CB-19 CB-244

tyco igbt module 25A

Abstract: 2kw pfc controlled rectifier CooIMOSTM + SiC Diode CooIMOSTM + SiC Diode half controlled rectifier PFC-IPM W , flow 0 height*: length: width: 17 mm 66 mm 33 mm flyer IPM height*: length: width
Vincotech
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V23990-P629-F56-PM1 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A P623-P629 V23990-P622-F64-PM V23990-P622-F74-PM1 V23990-P623-F-PM2 V23990-P623-F04-PM V23990-P623-F10-PM1

BYT 1000

Abstract: SiC IPM s G S-THOMSON SIC D I 7^237 â¡ â¡â¡Â¿2177 1 O 1HOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS T-òi-ty. BYT 61.61 B 6aa-~iaoa,cm SUPERSWITCH HIGH voltage fast recovery rectifiers REORESSEURS RAPIDES HAUTE TENSION 59C 02177 D HIGH VOLTAGE SUPERSWITCH SOFT RECOVERY FAST RECOVERY , recovery â'¢Tb« specification* and curve* enable the ditwmirvâliofi o4 tfr end IpM « 100°C und« usera , ©\THOMSON ♦ ©©EÃ"UPOSÃ"ROTTS w S G Sâ'"THOMSON 1 Sic D I 7^237 000217à 3 ZL BYT61-61B-600H. 1000
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HP214A BYT 1000 pulse generator hp214a 1-61B-600H 100OC QQQE17C B-600-

Westinghouse thyristor

Abstract: westinghouse DIODES ) DIPIPMTM (Dual-In-Line Package IPM) Accessories At Powerex, your success is our success. ­ ­ ­ ­ , Modules (IPMs) is available. With this line-up, which includes the only 600A IPM on the market, Powerex , capabilities Unmatched packaging expertise ­ Extensive SiC multichip module packaging experience ­
Powerex
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Westinghouse thyristor westinghouse DIODES westinghouse thyristor drive WESTINGHOUSE dc motor westinghouse power rectifiers WESTINGHOUSE RECTIFIERS
Abstract: TOSHIBA T O SH IBA RECTIFIER U10LC48 U1 0 L C 4 8 INVERTER EQ U IP M EN T FOR A C M O T O R CO NTROL CHOPPER EQ U IPM EN T FOR DC M O T O R CO NTROL O THER PO W ER CO N V ER SIO N EQ U IPM EN T .10.3 M A X . 1.32 Unit in mm · · · Repetitive Peak Reverse Voltage : V r r m = 800 V Average Forward Current T0-220 SM Package 2.54 10 .2 5 : I() = 10 A I SYMBOL Vr r m io : FSM Tj Tstg , in h e r e n t ele ctrical se n sitiv ity a n d v u ln e ra b ilit y t o p h y sic a l stress. It is -
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10LC48 961001EAA1
Abstract: SiC MOSFETs. The ZXGD3006E6 can drive typically 4A into the low gate impedance of an IGBT, with , driving >500W PSU Telecom & Server PSU Motor Drive Industrial motors Intelliegent Power Module (IPM Diodes
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ZXGD3006
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