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Part : SI9433DY-T1 Supplier : Vishay Siliconix Manufacturer : America II Electronics Stock : 4,980 Best Price : - Price Each : -
Part : SI9433DYT1 Supplier : Vishay Siliconix Manufacturer : ComSIT Stock : 12,265 Best Price : - Price Each : -
Part : SI9433DY Supplier : Vishay Intertechnology Manufacturer : Chip One Exchange Stock : 71 Best Price : - Price Each : -
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Si9433DY Datasheet

Part Manufacturer Description PDF Type
Si9433DY N/A Metal oxide P-channel FET, Enhancement Type Original
Si9433DY Toshiba Power MOSFETs Cross Reference Guide Original
SI9433DY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -20V, Single, Pkg Style SO Scan
Si9433DY SPICE Device Model Vishay P-Channel Enhancement-Mode MOSFET Original
SI9433DY-T1 Vishay Intertechnology P-Channel 20-V (D-S) MOSFET Original

Si9433DY

Catalog Datasheet MFG & Type PDF Document Tags

si9433dy

Abstract: Si6433DQ Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.045 @ VGS = ­4.5 V "5.4 0.070 @ VGS = ­2.7 V ­20 ID (A) "4.2 Recommended upgrade: Si9424DY Lower , Siliconix S-51358-Rev. H, 18-Dec-96 1 Si9433DY Specifications (TJ = 25_C Unless Otherwise Noted , , duty cycle v 2%. 2 Siliconix S-51358-Rev. H, 18-Dec-96 Si9433DY Typical Characteristics , 125 150 TJ ­ Junction Temperature (_C) 3 Si9433DY Typical Characteristics (25_C Unless
Temic Semiconductors
Original
Si6433DQ 9433DY 9424DY 6433DQ S-51358--R

Si9433DY

Abstract: Si9433DY SPICE Device Model SPICE Device Model Si9433DY Vishay Siliconix P-Channel Enhancement-Mode MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -Jun-01 www.vishay.com 1 SPICE Device Model Si9433DY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , Document Number: 71579 27-Jun-01 SPICE Device Model Si9433DY Vishay Siliconix COMPARISON OF MODEL
Vishay Siliconix
Original

Si9433DY-T1

Abstract: SI9433BDY-T1 Si9433DY Si9433BDY-E3 (Lead (Pb)-free version) Replaces Si9433DY Si9433BDY-T1 Replaces Si9433DY-T1 Si9433BDY-T1-E3 (Lead (Pb)-free version) Replaces Si9433DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si9433BDY Si9433DY Drain-Source Voltage VDS - 20 - 20 , Specification Comparison Vishay Siliconix Si9433BDY vs. Si9433DY Description: P-Channel, - 20 , Typ Si9433DY Max Min - 1.5 Typ Max - 0.8 Unit Static VGS(th
Vishay Siliconix
Original
DSA0042935 9433BDY 9433BDY-E3 9433BDY-T1 9433DY-T1 9433BDY-T1-E3

Si9433DY

Abstract: Si9433DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.045 @ VGS = ­4.5 V "5.4 0.070 @ VGS = ­2.7 V ­20 ID (A) "4.2 S S S SO-8 S 1 , Si9433DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol , -00652-Rev. J, 27-Mar-00 Si9433DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , (_C) www.vishay.com S FaxBack 408-970-5600 3 Si9433DY Vishay Siliconix TYPICAL
Vishay Siliconix
Original
S-00652--R

SI6433

Abstract: Temic Semiconductors 9433DY P-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y VDS(V) -20 r DS(on)(^) 0.045 @ Vgs - "4-5 V 0.070 @ Vgs = -2.7 V I d (A) ± 5.4 ±4.2 Recom m ended , °C/W Siliconix 1 S-51358-Rev. H, 18-Dec-96 SÌ9433DY Specifications (Tj = 25°C Unless , S-51358-Rev. H, 18-Dec-96 Temic Semiconductors O utput C h aracteristics SÌ9433DY Transfer , -Junction Temperature (°C) Siliconix 3 S-51358-Rev. H, 18-Dec-96 SÍ9433DY Typical
-
OCR Scan
SI6433 9424D

Si6433DQ

Abstract: Si9424DY Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.065 @ VGS = ­4.5 V "5.4 0.100 @ VGS = ­2.7 V ­20 ID (A) "4.2 Recommended upgrade: Si9424DY Lower , request FaxBack document #1207 . Siliconix S-47958-Rev. G, 15-Apr-96 1 Si9433DY , -Apr-96 Si9433DY Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics Transfer , (_C) 3 Si9433DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode
Temic Semiconductors
Original
S-47958--R

SMD10P05L

Abstract: 1A 5v input 5v output regulator ) 300 200 Q1 = Si9433DY VOUT = 3.0V 100 This capability lets the Figure 2 circuit derive 5V , reference. Q1 = Si9433DY VOUT = 5V 0 0 0.2 0.4 0.6 0.8 1.0 OUTPUT CURRENT (A , OUTPUT 5V/3V @ 1A, HP MODE 5V/3V @ 5mA, LP MODE Q2 2N3904 C1 100µF Q1: SILICONIX Si9433DY, OR
Maxim Integrated Products
Original
SMD10P05L ICL7611 1A 5v input 5v output regulator SMD10P05 Matsuo Tantalum P-channel power mosfet MAX872
Abstract: Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) ­20 20 rDS(on) (W) 0.045 @ VGS = ­4.5 V 0.070 @ VGS = ­2.7 V ID (A) "5.4 "4.2 Recommended upgrade: Si9424DY Lower , Si9433DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage , , duty cycle v 2%. 2 Siliconix S-51358-Rev. H, 18-Dec-96 Si9433DY Typical Characteristics (25 , -51358-Rev. H, 18-Dec-96 3 Si9433DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Vishay Siliconix
Original

Si6433DQ

Abstract: Si9424DY Si9433DY P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.065 @ VGS = ­4.5 V "5.4 0.100 @ VGS = ­2.7 V ­20 ID (A) "4.2 Recommended upgrade: Si9424DY Lower , request FaxBack document #1207 . Siliconix S-47958-Rev. G, 15-Apr-96 73 Si9433DY , -Apr-96 Si9433DY Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics Transfer , (_C) 75 Si9433DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode
Temic Semiconductors
Original
Abstract: Si9433DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) ­20 rDS(on) (W) 0.045 @ VGS = ­4.5 V 0.070 @ VGS = ­2.7 V ID (A) "5.4 "4.2 S S S SO-8 S S S G 1 2 , 408-970-5600 Symbol RthJA Limit 50 Unit _C/W 1 Si9433DY Vishay Siliconix SPECIFICATIONS , Document Number: 70125 S-00652-Rev. J, 27-Mar-00 Si9433DY Vishay Siliconix TYPICAL CHARACTERISTICS , 408-970-5600 3 Si9433DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Vishay Siliconix
Original

P3596

Abstract: Limit 50 Unit °c/w P-35963-Rev. E (05/24/94) 1-25 LITTLE FOOT " il SÌ9433DY , Si9433DY Transfer Characteristics I TC = 125 0 4 6 8 V ds - Drain-to-Source Voltage (V) 2 10 0 0 V , ) SÍ9433DY Temic Siliconix On-Resistance vs. Gate-to-Source Voltage Typical Characteristics (25 °C
-
OCR Scan
P3596 P-35963--R

Si9433DY

Abstract: Si9433DY Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.045 @ VGS = ­4.5 V "5.4 0.070 @ VGS = ­2.7 V ­20 ID (A) "4.2 S S S SO-8 S 1 , Si9433DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol , -00652-Rev. J, 27-Mar-00 Si9433DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , (_C) www.vishay.com S FaxBack 408-970-5600 3 Si9433DY Vishay Siliconix TYPICAL
Vishay Siliconix
Original

Si4948DY

Abstract: Si9948DY9430DY SÌ9433DY " SÌ9933DY 1 1 SÌ9947DY') SÌ9953DY4435DY4431DY4953DY9435DY " SÌ4947DY
-
OCR Scan
Si4948DY Si9948DY Si4946DY 9426DY 9926DY 9925DY 9956DY 4410DY 4412DY

3055EL

Abstract: 636 MOSFET TRANSISTOR Si9410DY. Examples of PMOS FETs are the Siliconix Si9433DY and Si9434DY and the National Semiconductor , higher than 2.7V, you can use a low-voltage PMOS FET, such as the Siliconix Si9433DY or Si9435DY
Maxim Integrated Products
Original
AN636 APP636 3055EL 636 MOSFET TRANSISTOR 3055E MTP3055EL

Si9947DY

Abstract: XP131A1520SR Si9435DY XP132A01A0SR Si9433DY XP132A0265SR Si9434DY XP132A0340SR Si4435DY XP132A1545SR Si9936DY
-
Original
Si9947DY XP131A0232SR XP131A1330SR XP131A0616SR XP131A1715SR XP131A1235SR XP131A1617SR

MMBFJ176

Abstract: siliconix catalog dual j-fet 30.0 Single SO-8 Mfr.'s Max. Max. rDS(on) (~) Max. Si9433DY 20 — 0.045 0.070 — ± Typ. 5.4 20.0
Allied Electronics Catalog
Original
MMBFJ176 VP0610T siliconix catalog dual j-fet 0858T 4467DY 6465DQ 4463DY 6969DQ 9434DY 4425DY

P-Channel TrenchFET Power MOSFET SOT-23

Abstract: TP0101T equivalent Si9434DY Si9433DY Si4425DY Si4435DY-RevA Si9430DY Si9435DY Si9400DY Si9953DY Max. rDS(on) () Max. Typ. Max
Vishay Siliconix
Original
TN0201T P-Channel TrenchFET Power MOSFET SOT-23 TP0101T equivalent DUAL P- MOSFET SO-8 P-CHANNEL POWER MOSFET SO-8 4435DY-R 9400DY 6968DQ 9428DY TN0200T TN0200TS

LT1366

Abstract: state variable filter Corporation. 4.50V < VIN = 4.75V < 5.00V ­ R3 20 R9 100 A1 1/2 LT1366 Q1 Si9433DY 1.5k
Linear Technology
Original
LTC1288 LT1367 state variable filter DN-89 1N4148 Rail-to-Rail FET Amplifier 1-800-4-LINEAR

SDCFB

Abstract: sandisk SDTB-32 SD103CWS 0.16 GIS 812 SI9433DY 0.91 SIX 858 SMBJ43A 0.24 CRY — SN74ABT541BN 0.85 TIS — SD106WS 0.29 GIS 812
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Original
SDCFB sandisk SDTB-32 SDP3B SDTB-32 300GB SDCFB-32 SC141D SI4480DY SMBJ12CA SN7474N SC311-4 SI4532DY

ultraISR CABLE

Abstract: 2N3904 ND DATA3(5) D S G OA3 DA3 +Vout ISRVPP(3) PICO 5GR12S Si9433DY -Vin -Vout
Cypress Semiconductor
Original
HCT244 ultraISR CABLE 2N3904 ND HC244 DA333 RT200 FLASH370

super cap 5.5v

Abstract: MICROPROCESSOR CIRCUITS . _Typical Operating Circuit (OPTIONAL) Si9433DY SILICONIX 3.0V OR 3.3V 16-DIP/SO 16-DIP/SO 8 , . MAX793/MAX794/MAX795 3.0V/3.3V Adjustable Microprocessor Supervisory Circuits (OPTIONAL) Si9433DY , down to -2.7V. The Si9433DY has a maximum 100m drainsource on-resistance with 2.7V of gate drive and a
Maxim Integrated Products
Original
MAX794 MAX795 MAX793 super cap 5.5v MICROPROCESSOR CIRCUITS p-channel power mosfet 14A MAX793/MAX795 MAX793/MAX794 MS012

MAX793

Abstract: MAX794 adjustable. _Typical Operating Circuit (OPTIONAL) Si9433DY SILICONIX 3.0V OR 3.3V , ) Si9433DY SILICONIX 3.3V D 0.1µF VRST S 0.1µF PMOS VCC BATT ON OUT R1 RESET IN , down to -2.7V. The Si9433DY has a maximum 100m drainsource on-resistance with 2.7V of gate drive and a
Maxim Integrated Products
Original

MAX793

Abstract: MAX794 adjustable. _Typical Operating Circuit (OPTIONAL) Si9433DY SILICONIX 3.0V OR 3.3V , . MAX793/MAX794/MAX795 3.0V/3.3V Adjustable Microprocessor Supervisory Circuits (OPTIONAL) Si9433DY , down to -2.7V. The Si9433DY has a maximum 100m drainsource on-resistance with 2.7V of gate drive and a
Maxim Integrated Products
Original

MAX793

Abstract: MAX794 Circuit (OPTIONAL) Si9433DY SILICONIX 3.0V OR 3.3V 0.1µF 0.1µF 16-DIP/SO 16-DIP/SO 8-DIP/SO , ) Si9433DY SILICONIX 3.3V D 0.1µF VRST S 0.1µF PMOS VCC BATT ON OUT R1 RESET IN , down to -2.7V. The Si9433DY has a maximum 100m drainsource on-resistance with 2.7V of gate drive and a
Maxim Integrated Products
Original
MAX794ESE

MAX793 equivalent

Abstract: Si9433DY Circuit (OPTIONAL) Si9433DY SILICONIX 3.0V OR 3.3V 0.1µF 0.1µF 16-DIP/SO 16-DIP/SO 8-DIP/SO , ) Si9433DY SILICONIX 3.3V D 0.1µF VRST S 0.1µF PMOS VCC BATT ON OUT R1 RESET IN , down to -2.7V. The Si9433DY has a maximum 100m drainsource on-resistance with 2.7V of gate drive and a
Maxim Integrated Products
Original
MAX793 equivalent max793r

max489 regulator

Abstract: MAX677CPP Si9433DY 0.1µF P C1 100µF R1 10k VOUT VCC IC3 RESET IC1 MAX709 GND 3 7 , (mV) 300 200 Q1 = Si9433DY VOUT = 3.0V 100 This capability lets the Figure 2 circuit , system reference. Q1 = Si9433DY VOUT = 5V 0 0 0.2 0.4 0.6 0.8 1.0 OUTPUT CURRENT , : SILICONIX Si9433DY, OR SMD10P05L R1: 100k FOR 5V OUTPUT, 20k FOR 3V OUTPUT C1: SANYO OS-CON, OR MATSUO
Maxim Integrated Products
Original
MAX335 MAX619 max489 regulator MAX677CPP 2N2222A motorola transistor data hp 14 pin four digit dip monolithic display MAX351/352/353 MAX361/362/364/365 MAX463/464/465/466 MAX639/640/653
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