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SI4448DY-T1-GE3 Vishay Siliconix Small Signal Field-Effect Transistor, 32A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 visit Digikey
SI4448DY-T1-E3 Vishay Siliconix Small Signal Field-Effect Transistor, 32A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 visit Digikey

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Part : SI4448DY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 2,500 Best Price : $1.7015 Price Each : $2.9682
Part : SI4448DY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $1.47 Price Each : $1.79
Part : SI4448DY-T1-GE3 Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $1.45 Price Each : $1.57
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Si4448DY Datasheet

Part Manufacturer Description PDF Type
SI4448DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 50A 8-SOIC Original
SI4448DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 50A 8-SOIC Original

Si4448DY

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: : Si4448DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise , New Product Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT , Number: 69653 S-72662-Rev. A, 24-Dec-07 www.vishay.com 1 New Product Si4448DY Vishay , . www.vishay.com 2 Document Number: 69653 S-72662-Rev. A, 24-Dec-07 New Product Si4448DY Vishay , ) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si4448DY Vishay Siliconix Vishay Siliconix
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69653 6965-3 Si4448 4448DY 4448DY-T1-E3 S-72662-R
Abstract: SPICE Device Model Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -81769Rev. A, 04-Aug-08 www.vishay.com 1 SPICE Device Model Si4448DY Vishay Siliconix SPECIFICATIONS , . www.vishay.com 2 Document Number: 68145 S-81769Rev. A, 04-Aug-08 SPICE Device Model Si4448DY Vishay Vishay Siliconix
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S-81769R
Abstract: SPICE Device Model Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -81769Rev. A, 04-Aug-08 www.vishay.com 1 SPICE Device Model Si4448DY Vishay Siliconix SPECIFICATIONS , . www.vishay.com 2 Document Number: 68145 S-81769Rev. A, 04-Aug-08 SPICE Device Model Si4448DY Vishay Vishay Siliconix
Original
Abstract: Ordering Information: Si4448DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 , New Product Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V , Si4448DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static , . www.vishay.com 2 Document Number: 69653 S-72662-Rev. A, 24-Dec-07 New Product Si4448DY Vishay , New Product Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Vishay Siliconix
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Abstract: Ordering Information: Si4448DY-T1-E3 (Lead (Pb)-free) Si4448DY-T1-GE3 (Lead (Pb)-free and Halogen-free , Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -0138-Rev. B, 02-Feb-09 www.vishay.com 1 Si4448DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , Number: 69653 S09-0138-Rev. B, 02-Feb-09 Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , www.vishay.com 3 Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.010 Vishay Siliconix
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4448DY-T1-GE3
Abstract: Ordering Information: Si4448DY-T1-E3 (Lead (Pb)-free) Si4448DY-T1-GE3 (Lead (Pb)-free and Halogen-free , Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -0138-Rev. B, 02-Feb-09 www.vishay.com 1 Si4448DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , Number: 69653 S09-0138-Rev. B, 02-Feb-09 Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , www.vishay.com 3 Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.010 Vishay Siliconix
Original
Abstract: Ordering Information: Si4448DY-T1-E3 (Lead (Pb)-free) Si4448DY-T1-GE3 (Lead (Pb)-free and Halogen-free , Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -0138-Rev. B, 02-Feb-09 www.vishay.com 1 Si4448DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , -Feb-09 Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 70 2.0 VGS = 5 thru , ) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4448DY Vishay Siliconix TYPICAL Vishay Siliconix
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2011/65/EU 2002/95/EC JS709A
Abstract: : Si4448DY-T1-E3 (Lead (Pb)-free) Si4448DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D , Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on , Maximum 35 16 Unit °C/W Si4448DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted , device reliability. www.vishay.com 2 Document Number: 69653 S09-0138-Rev. B, 02-Feb-09 Si4448DY , www.vishay.com 3 Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.010 Vishay Siliconix
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S09-0138-R
Abstract: : Si4448DY-T1-E3 (Lead (Pb)-free) Si4448DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET 8 7 6 5 D D D , Si4448DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on , Maximum 35 16 Unit °C/W Si4448DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted , device reliability. www.vishay.com 2 Document Number: 69653 S09-0138-Rev. B, 02-Feb-09 Si4448DY , www.vishay.com 3 Si4448DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.010 Vishay Siliconix
Original
Abstract: Si4448DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in , Si4448DY_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER , / SEMITHERM 2002 www.vishay.com 2 Document Number: 69763 Revision: 10-Oct-07 Si4448DY_RC Vishay Linear Technology
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