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| Abstract: Specification Comparison Vishay Siliconix Si3493BDV vs. Si3493DV Si3493DV Description: Package: Pin Out: P-Channel, 20 V (D-S) MOSFET TSOP-6 Identical Part Number Replacements Si3493BDV-T1-E3 Replaces Si3493DV-T1-E3 Si3493DV-T1-E3 Si3493BDV-T1-E3 Replaces Si3493DV-T1 Si3493DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 癈 , Range Maximum Junction-to-Ambient Si3493BDV Si3493DV Si3493DV - 20 � -7 - 5.8 - 25 - 1.73 2.08 , ) IGSS IDSS ID(on) Si3493BDV Min Typ Si3493DV Si3493DV Min - 0.9 � 100 1 - 0.4 Max - ... | Original |
1 pages, |
Si3493DV-T1-E3 Si3493DV-T1 Si3493DV Si3493BDV-T1-E3 Si3493BDV Si3493BDV abstract |
| Abstract: SPICE Device Model Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , A, 21-Jan-08 www.vishay.com 1 SPICE Device Model Si3493BDV Vishay Siliconix SPECIFICATIONS , S-80056Rev. A, 21-Jan-08 SPICE Device Model Si3493BDV Vishay Siliconix COMPARISON OF MODEL WITH MEASURED ... | Original |
4 pages, |
Si3493BDV Si3493BDV abstract |
| Abstract: Code Part # Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3493BDV-T1-E3 (Lead (Pb)-free) Si3493BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C , Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , : 74478 S09-1399-Rev. B, 20-Jul-09 www.vishay.com 1 Si3493BDV Vishay Siliconix SPECIFICATIONS , Document Number: 74478 S09-1399-Rev. B, 20-Jul-09 Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS ... | Original |
7 pages, |
Si3493BDV-T1-GE3 Si3493BDV-T1-E3 Si3493BDV Si3493BDV abstract |
| Abstract: MOSFET Ordering Information: Si3493BDV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C , New Product Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT , Si3493BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 4.0 VGS = 5 thru , ) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si3493BDV Vishay Siliconix ... | Original |
7 pages, |
Si3493BDV-T1-E3 Si3493BDV Si3493BDV abstract |
| Abstract: MOSFET Ordering Information: Si3493BDV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C , New Product Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT , Si3493BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 4.0 VGS = 5 thru , ) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si3493BDV Vishay Siliconix ... | Original |
7 pages, |
Si3493BDV-T1-E3 Si3493BDV Si3493BDV abstract |
| Abstract: : Si3493BDV-T1-E3 (Lead (Pb)-free) Si3493BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) (1, 2, 5, 6) D P-Channel , Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on , www.vishay.com 1 Si3493BDV Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , reliability. www.vishay.com 2 Document Number: 74478 S09-1399-Rev. B, 20-Jul-09 Si3493BDV Vishay , Si3493BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 0.060 ID = 7 A 1 R DS ... | Original |
11 pages, |
Si3493BDV Si3493BDV abstract |
| Abstract: 10.4 Coilcraft Si3493BDV 20V, 4A, 25 m , PFET MSOP-8 MSS1038-522NL MSS1038-522NL 5.2 H, 5A, SO-6 ... | Original |
8 pages, |
vishay pfet 3-40mA C3225X5R1H225K CRCW08052492F EC21QS04 EEEHA1H330XP LED 1w led 4,5v LED DRAGON X LM3401 osram golden dragon Si2319DS 8W osram 1w luxeon 4 led LM3401 abstract |
| Abstract: , Inductor MSS1038-522NL MSS1038-522NL 10.2 x 10.4 Coilcraft Q1 20V, 4A, 25 m, PFET Si3493BDV SO-6 ... | Original |
8 pages, |
SSA24 CRCW08052492F EEEHA1H330XP golden dragon led luxeon 1w luxeon k2 1w MSS1260T-683ML serial 300254 Si2319DS SR73-2B C3225X5R1H225K LM3401 LM3401 abstract |
| Abstract: Si3469DV Si3469DV Si3471CDV Si3471CDV Si3473CDV Si3473CDV Si3473DV Si3473DV Si3493BDV Si3495DV Si3495DV Si3812DV Si3812DV Si3853DV Si3853DV Si3867DV Si3867DV Si3879DV Si3879DV ... | Original |
4 pages, |
BSH202 FDC796N PMGD280UN AO3400 NDS0605 2n7002 nxp NTR2101PT1G nxp Cross-reference pmn50xp FDT461N BSH108 PMV60EN BSS123 NXP BSH103 PMV65XP datasheet abstract |
| Abstract: Si3493BDV -20 Si3433BDV Si3433BDV -20 Si3867DV Si3867DV Si3469DV Si3469DV 11 52 12.5 10.6 52 7 28 2 ... | Original |
20 pages, |
Si7309 SI7415DN PowerPACK 1212-8 SI7463DP TP0610KL SUM90P10-19L SUM55P06-19L SUM110P04-05 SUD50P10-43L SUD50P06-15 SI7601DN SiA411DJ SI9933 SI7489DP BS250KL datasheet abstract |
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| *January 21, 2008 *Doc. ID: 69891, S-80056 S-80056 S-80056 S-80056, Rev. A *File Name: Si3493BDV_PS.txt and Si3493BDV_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si3493BDV D G S M1 3 GX S S PMOS W=1734401u L=0.5u M2 S GX S D NMOS W=1734401u L=1.6u RG G GX 6.5 R1 D 3 RTEMP 0.1E-3 CGS GX S 5E-12 5E-12 5E-12 5E-12 DBD D S DBD www.datasheetarchive.com/files/vishay/docs/69891/si3493bd.txt |
Vishay | 08/02/2008 | 1.53 Kb | TXT | si3493bd.txt |
| *January 21, 2008 *Doc. ID: 69892, S-80056 S-80056 S-80056 S-80056, Rev. A *File Name: Si3493BDV_PS.txt and Si3493BDV_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si3493BDV D G S M1 3 GX S S PMOS W=1734401u L=0.5u M2 S GX S D NMOS W=1734401u L=1.6u RG G GX 6.5 R1 D 3 RTEMP 0.1E-3 CGS GX S 5E-12 5E-12 5E-12 5E-12 DBD D S DBD www.datasheetarchive.com/files/vishay/docs/69892/si3493bd.lib |
Vishay | 08/02/2008 | 1.53 Kb | LIB | si3493bd.lib |
| *January 21, 2008 *Doc. ID: 69890, S-80056 S-80056 S-80056 S-80056, Rev. A *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si3493BDV D G S M1 3 GX S S PMOS W=1734401u L=0.5u M2 S GX S D NMOS W=1734401u L=1.6u RG G GX 6.5 R1 D 3 RTEMP 0.1E-3 CGS GX S 5E-12 5E-12 5E-12 5E-12 DBD D S DBD www.datasheetarchive.com/files/vishay/docs/69890/si3493bd.txt |
Vishay | 08/02/2008 | 1.54 Kb | TXT | si3493bd.txt |
| * Library of Siliconix subsidiary of Vishay, * $Revision: 1.0 $ * $Author: SRIPADA $ * $Date: 03 FEB 2006 $ *- *$ *Jan 26, 2005 *Doc. ID:76150, Rev. A .SUBCKT 2N7000KL 2N7000KL 2N7000KL 2N7000KL 4 1 2 M1 3 1 2 2 NMOS W=26124u L=0.50u M2 2 1 2 4 PMOS W=26124u L=0.95u R1 4 3 RTEMP 4.5E-1 CGS 1 2 24E-12 24E-12 24E-12 24E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 www.datasheetarchive.com/files/spicemodels/misc/siliconix.lib |
Spice Models | 04/07/2008 | 1556.57 Kb | LIB | siliconix.lib |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDC606P | FDC606P Buy | SI3493BDV Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC606P | FDC606P Buy | SI3493BDV-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| FDC606P | FDC606P Buy | SI3493BDV-T1-GE3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | P-Channel 1.8V Specified PowerTrench MOSFET |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| CPH6347-TL-H Buy | Si3493BDV Buy | Vishay Intertechnology | Close |
| Panasonic Part | Manufacturer | Similar Part | Manufacturer |