NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Specification Comparison Vishay Siliconix Si2316BDS vs. Si2316DS Si2316DS Description: Package: Pin Out: N-Channel, 30-V (D-S) MOSFET SOT-23 Identical Part Number Replacements Si2316BDS-T1-E3 Replaces Si2316DS-T1-E3 Si2316DS-T1-E3 Si2316BDS-T1-E3 Replaces Si2316DS-T1 Si2316DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Si2316BDS Si2316DS Si2316DS Drain-Source Voltage VDS , Junction-to-Ambient A W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Si2316BDS ... | Original |
1 pages, |
Si2316DS Si2316BDS-T1-E3 Si2316BDS Si2316BDS abstract |
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| Abstract: SPICE Device Model Si2316BDS Vishay Siliconix N-Channel 30V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , A, 21-May-07 www.vishay.com 1 SPICE Device Model Si2316BDS Vishay Siliconix SPECIFICATIONS , Number: 74879 S-71049Rev. A, 21-May-07 SPICE Device Model Si2316BDS Vishay Siliconix COMPARISON OF ... | Original |
3 pages, |
Si2316BDS 74879 74879 datasheet Si2316BDS abstract |
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| Abstract: SPICE Device Model Si2316BDS Vishay Siliconix N-Channel 30V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , A, 21-May-07 www.vishay.com 1 SPICE Device Model Si2316BDS Vishay Siliconix SPECIFICATIONS , Number: 74879 S-71049Rev. A, 21-May-07 SPICE Device Model Si2316BDS Vishay Siliconix COMPARISON OF ... | Original |
4 pages, |
Si2316BDS Si2316BDS abstract |
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| Abstract: 2 Top View Si2316DS Si2316DS (M6)* *Marking Code Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free , New Product Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES · TrenchFET , www.vishay.com 1 New Product Si2316BDS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless , Product Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 3 , Temperature www.vishay.com 3 New Product Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C ... | Original |
6 pages, |
Si2316DS Si2316BDS-T1-E3 313b sot Si2316BDS Si2316BDS abstract |
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| Abstract: 2 Top View Si2316DS Si2316DS (M6)* *Marking Code Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free , New Product Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES · TrenchFET , www.vishay.com 1 New Product Si2316BDS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless , Product Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 3 , Temperature www.vishay.com 3 New Product Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C ... | Original |
6 pages, |
Si2316DS Si2316BDS-T1-E3 313B Si2316BDS Si2316BDS abstract |
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| Abstract: Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free) Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free , Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 , Si2316BDS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol , reliability. www.vishay.com 2 Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 Si2316BDS Vishay , 3 Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 ... | Original |
6 pages, |
Si2316DS Si2316BDS-T1-GE3 Si2316BDS-T1-E3 Si2316BDS Si2316BDS abstract |
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| Abstract: Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free) Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free , Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 , Si2316BDS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol , reliability. www.vishay.com 2 Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 Si2316BDS Vishay , 3 Si2316BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 ... | Original |
6 pages, |
Si2316DS Si2316BDS-T1-GE3 Si2316BDS-T1-E3 Si2316BDS Si2316BDS abstract |
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| Abstract: ) G 1 3 D S 2 Top View Si2316DS Si2316DS (M6)* *Marking Code Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free) Si2316BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 , Si2316BDS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 , , 10-Aug-09 Symbol RthJA RthJF Typical 80 60 Maximum 100 75 Unit °C/W www.vishay.com 1 Si2316BDS , www.vishay.com 2 Document Number: 70445 S09-1503-Rev. B, 10-Aug-09 Si2316BDS Vishay Siliconix TYPICAL ... | Original |
9 pages, |
Si2316BDS Si2316BDS abstract |
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| Abstract: D2740 Si2316BDS 30 20 0.05 0.08 Si2304BDS Si2304BDS 30 20 0.07 0.105 Si2318DS Si2318DS 40 20 ... | Original |
23 pages, |
Si1067X Si1065X SC-89 SI4686 SUP85N06-05 si7236 Siliconix mosfet guide tsop6 marking 312 TN2404K sud*50n025-06p sup60n10 compatible THERMAL SWITCH SC-75A SUP90N03-03 tsop6 marking 345 datasheet abstract |
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| Abstract: LTC4098 LTC4098 USB Compatible Switching Power Manager/Li-Ion Charger with Overvoltage Protection DESCRIPTIO U FEATURES Switching Regulator with Bat-TrackTM Adaptive Output Control Makes Optimal Use of Limited Power Available from USB Port to Charge Battery and Power Application Overvoltage Protection Guards Against Damage Bat-Track External Step-Down Switching Regulator Control Maximizes Efficiency from Automotive, Firewire and Other High Voltage Sources 180 ... | Original |
32 pages, |
36V Li-Ion battery charge controller dale molded inductors high power NTC pdc20 circuit board High voltage negative regulator transistor MN1 DATA SHEET m2 marking ac sot-23 P-Channel 200V MOSFET ntc 2,0 mini usb 10p plug MOSFET P-channel SOT-23 LTC4098 LTC4098 LTC4098 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| * Library of Siliconix subsidiary of Vishay, * $Revision: 1.0 $ * $Author: SRIPADA $ * $Date: 03 FEB 2006 $ *- *$ *Jan 26, 2005 *Doc. ID:76150, Rev. A .SUBCKT 2N7000KL 2N7000KL 2N7000KL 2N7000KL 4 1 2 M1 3 1 2 2 NMOS W=26124u L=0.50u M2 2 1 2 4 PMOS W=26124u L=0.95u R1 4 3 RTEMP 4.5E-1 CGS 1 2 24E-12 24E-12 24E-12 24E-12 DBD 2 4 DBD * .MODEL NMOS NMOS (LEVEL = 3 www.datasheetarchive.com/files/spicemodels/misc/siliconix.lib |
Spice Models | 04/07/2008 | 1556.57 Kb | LIB | siliconix.lib |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDN357N | FDN357N Buy | SI2316BDS-T1-E3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN357N | FDN357N Buy | SI2316BDS-T1-GE3 Buy | Vishay Intertechnology Inc | Close | Power MOSFET | N-Channel Logic Level Enhancement Mode Field Effect Transistor |