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Part : SUB:4987JA3025K Supplier : LG Innotek Manufacturer : Newark element14 Stock : - Best Price : $6.39 Price Each : $10.41
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SUB45N03 Datasheet

Part Manufacturer Description PDF Type
SUB45N03 Vishay Intertechnology N-Channel 30-V (D-S), 175°C MOSFET Original
SUB45N03-13L Vishay Intertechnology N-Channel 30-V (D-S), 175°C MOSFET Original
SUB45N03-13L Vishay Siliconix MOSFETs Original
SUB45N03-13L-E3 Vishay Transistor Mosfet N-CH 30V 45A 3TO-263 Original
SUB45N03-13L SPICE Device Model Vishay N-Channel 30-V (D-S), 175°C MOSFET Original

SUB45N03

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V , -263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE , /product/spice.htm Document Number: 71739 S-05011-Rev. F, 29-Oct-01 www.vishay.com 1 SUB45N03-13L , : 71739 S-05011-Rev. F, 29-Oct-01 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25 , Charge (nC) www.vishay.com 3 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS Vishay Siliconix
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S-05011--R
Abstract: SPICE Device Model SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET ° CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Model Subcircuit Schematic) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model , Number: 70923 14-Sep-98 www.vishay.com 1 SPICE Device Model SUB45N03-13L Vishay Siliconix , 14-Sep-98 SPICE Device Model SUB45N03-13L Vishay Siliconix COMPARISON OF MODEL WITH MEASURED Vishay Siliconix
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Abstract: SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V , connected to TAB G G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS , -Oct-01 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 1.7 Unit _C/W 1 SUB45N03-13L Vishay , -05011-Rev. F, 29-Oct-01 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , ) www.vishay.com 3 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED Vishay Siliconix
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Abstract: SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V , -263 G DRAIN connected to TAB G D S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE , /product/spice.htm Document Number: 71739 S-05011-Rev. F, 29-Oct-01 www.vishay.com 1 SUB45N03-13L , : 71739 S-05011-Rev. F, 29-Oct-01 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25 , Charge (nC) www.vishay.com 3 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS Vishay Siliconix
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Abstract: SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V , SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter , -05010-Rev. G, 05-Nov-01 www.vishay.com 1 SUB45N03-13L Vishay Siliconix MOSFET SPECIFICATIONS (TJ , Document Number: 71740 S-05010-Rev. G, 05-Nov-01 SUB45N03-13L Vishay Siliconix TYPICAL , Charge (nC) www.vishay.com 3 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS Vishay Siliconix
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S-05010-Rev S-05010--R
Abstract: SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V , SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter , -05010-Rev. G, 05-Nov-01 www.vishay.com 1 SUB45N03-13L Vishay Siliconix MOSFET SPECIFICATIONS (TJ , Document Number: 71740 S-05010-Rev. G, 05-Nov-01 SUB45N03-13L Vishay Siliconix TYPICAL , Charge (nC) www.vishay.com 3 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS Vishay Siliconix
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Abstract: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS , TO-263 G DRAIN connected to TAB G G D S Top View SUP45N03-13L SUB45N03-13L N-Channel MOSFET D S , SUP/SUB45N03-13L Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED , Number: 70804 S-00655-Rev. D, 27-Mar-00 SUP/SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS , ­ Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB45N03-13L Vishay Vishay Siliconix
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SUP/SUB45N03-13L S-00655--R
Abstract: SUB45N03-13L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in , . Document Number: 69523 Revision: 22-Aug-07 www.vishay.com 1 SUB45N03-13L_RC Vishay Siliconix R-C , : 22-Aug-07 SUB45N03-13L_RC Vishay Siliconix Document Number: 69523 Revision: 22 Vishay Siliconix
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AN609 8205 8205 A 8205 datasheet
Abstract: SUP/SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS , TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N03-13L , -Feb-01 www.vishay.com 1 SUP/SUB45N03-13L Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE , . www.vishay.com 2 Document Number: 70804 S-03068-Rev. E, 12-Feb-01 SUP/SUB45N03-13L Vishay Siliconix , Qg ­ Total Gate Charge (nC) www.vishay.com 3 SUP/SUB45N03-13L Vishay Siliconix TYPICAL Vishay Siliconix
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S-03068--R
Abstract: SUB45N03-13L Siliconix N-Channel 30-V (D-S), 175°C MOSFET New Product IQ * PRODUCT SUM M , @ V GS = 10 V 30 0.02 @ VGS = 4.5 V Q TO-263 r i n G D S o SUB45N03-13L N-Channel , thJC L IM IT 40 U N IT ° c /w 1.7 1 SUB45N03-13L Siliconix wmmf M O S F E T , formerly a division of TEMIC Semiconductors www.siliconix.com SUB45N03-13L Typical , of TEMIC Semiconductors SUB45N03-13L Siliconix Typical Characteristics (25°C Unless Otherwise -
OCR Scan
S-58971--
Abstract: SPICE Device Model SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -61149Rev. B, 26-Jun-06 www.vishay.com 1 SPICE Device Model SUB45N03-13L Vishay Siliconix , Device Model SUB45N03-13L Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS Vishay Siliconix
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13L diode S-61149R
Abstract: MBR052LT1 12V + C6 1F L2 1H + C7 22F Q4 ADP3178 SUB45N03-13L 1 VID0 GND 16 2 , *SUB45N03-13L R11 13.3k VLR2 1.5V, 2A R3 220 Figure 1. Complete Implementation of the ADP3178 , transconductance, gm. For example, the SUB45N03-13L has a gm of 15 Siemens for a 1 A load current. Because the , example, if the load capacitor is a 10 uF MLCC (with an ESR of around 10 m) and the SUB45N03-13L is used , sheet is the SUB45N03-13L. The method for selecting a MOSFET for a particular application should be Analog Devices
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AN-593 ADP3158 SUB75N03-07 rubycon mhz E0298 capacitor siemens 4700 35 AN593
Abstract: VISHAY SUP/SUB45N03-13L Siliconix T N-Channel 30-V (D-S), 175°C MOSFET New Product , G G D S Top View SUP45N03-13L D S Top View s SUB45N03-13L N-Channel MOSFET A B S O L , SUP/SUB45N03-13L Siliconix V1SHAY M O S F E T S P E C IF IC A T IO N S ( T j = 2 5 ° C U N , www.siliconix.com VISHAY SUP/SUB45N03-13L Siliconix T Y P IC A L C H A R A C T E R IS T IC S (25 ° C , -Oct-98 Siliconix was formerly a division of TEMIC Semiconductors www.siliconix.com SUP/SUB45N03-13L -
OCR Scan
S-58547--
Abstract: SPICE Device Model SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -61149Rev. B, 26-Jun-06 www.vishay.com 1 SPICE Device Model SUB45N03-13L Vishay Siliconix , Device Model SUB45N03-13L Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS Vishay Siliconix
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Abstract: SUB45N03-13L Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY V , SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter , -05010-Rev. G, 05-Nov-01 www.vishay.com 1 SUB45N03-13L Vishay Siliconix MOSFET SPECIFICATIONS (TJ , Document Number: 71740 S-05010-Rev. G, 05-Nov-01 SUB45N03-13L Vishay Siliconix TYPICAL , Charge (nC) www.vishay.com 3 SUB45N03-13L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS Vishay Siliconix
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Abstract: SUB45N03-13L Siliconix N-Channel 30-V (D-S), 175_C MOSFET New Product PRODUCT SUMMARY V(BR , S Top View S SUB45N03-13L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS , UNIT 1 SUB45N03-13L Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED , SUB45N03-13L Siliconix Typical Characteristics (25_C Unless Otherwise Noted) Output Characteristics 120 , -Aug-98 Siliconix was formerly a division of TEMIC Semiconductors 3 SUB45N03-13L Siliconix Typical Vishay Siliconix
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S-58971--R
Abstract: SPICE Device Model SUB45N03 N-Channel 30-V (D-S), 175°C MOSFET Characteristics · N-channel Vertical DMOS · Macro-Model (Subcircuit) · Level 3 MOS · Applicable for Both Linear and Switchmode · Applicable Over a -55 to 125°C Temperature Range · Models Gate Charge, Transient, and Diode Reverse , : 70923 1 SPICE Device Model SUB45N03 Model Evaluation N-Channel Device (TJ=25°C Unless Otherwise , temperature Siliconix 9/14/98 Document: 70923 2 SPICE Device Model SUB45N03 Comparison of Model Vishay Intertechnology
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Abstract: as formerly a division of TEMIC Semiconductors 12 SUP/SUB45N03-13L Vishay Siliconix N-Channel 30 , TO-263 n G D S Ô S N-Channel M O SFET Top View G D S Top View SUP45N03-13L SUB45N03-13L , Semiconductors R thJA S YM B O L LIM IT 40 85 1.7 UN IT °C/W RlhJC 13 SUP/SUB45N03-13L , formerly a division of TEMIC Semiconductors 14 SUP/SUB45N03-13L Vishay Silicon ix TYPIC A L CH , -Oct.-98 Siliconix was formerty a division of TEMIC Semiconductors 15 SUP/SUB45N03-13L Vishay Siiiconix TY P -
OCR Scan
70604 SUB70N03-09P SUP/SUB70N03-09P SUP70N03-09 SUB70N03-09 S-59917 S-58547--R
Abstract: ) (m) 2 D PAK and TO-220 SUB70N03-09BP 30 13 9 SUB45N03-13L 30 20 13 SUB45N05-20L 40 20 , solution is used. +12V Input PD = I 2 × RDS (ON ) × [1 - Duty Cycle ] = 3.26W [SUB45N03-13L or , MOSFET such as SUB45N03-13L. It must be able to turn on to a low RDS(ON) with VGS of 4.5V or higher. VC1 Microsemi
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LX1684 LM78L05 LX1682 LX1684CD LX1684CD-TR MBR2545
Abstract: ©) (m Ω) 2 D PAK and TO-220 SUB70N03-09BP 30 13 9 SUB45N03-13L 30 20 13 SUB45N05-20L 40 20 , Cycle ] = 3.26W +12V Input [SUB45N03-13L or 2.12W for the SUB70N03-09BP] Non-Synchronous , upper MOSFET. The top FET must be a logic level power MOSFET such as SUB45N03-13L. It must be able to Microsemi
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