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STX112 Datasheet

Part Manufacturer Description PDF Type Ordering
STX112 STMicroelectronics SILICON NPN POWER DARLINGTON TRANSISTOR
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5 pages,
51.09 Kb

Original Buy
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STX112 STMicroelectronics SILICON NPN POWER DARLINGTON TRANSISTOR
ri

5 pages,
150.75 Kb

Original Buy
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STX112-AP STMicroelectronics SILICON NPN POWER DARLINGTON TRANSISTOR
ri

5 pages,
150.75 Kb

Original Buy
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STX112 STMicroelectronics Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR DARL NPN TO-92
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9 pages,
0 Kb

Original Buy
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STX112-AP STMicroelectronics Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR DARL NPN TO-92
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9 pages,
0 Kb

Original Buy
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STX112

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: . = 100 Device summary Order codes Marking Polarity Package Packaging STX112-AP , STX112 STX117 STX117 Complementary power Darlington transistors Features . Good hFE linearity , Doc ID 6881 Rev 4 1/9 www.st.com 9 Absolute maximum ratings 1 STX112, STX117 STX117 , Rev 4 Value Unit 104 °C/W STX112, STX117 STX117 2 Electrical characteristics , current gain (VCE = - 3 V PNP) 3/9 Electrical characteristics STX112, STX117 STX117 Figure 4 ... STMicroelectronics
Original
datasheet

9 pages,
323.05 Kb

X117 Rev-4 STX112-AP STX112AP pnp high voltage to92 STX117-AP pnp to92 STX112 equivalent x112 STX112 stx117 x112 st STX117 TEXT
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Abstract: STX112-AP X112 NPN TO92-AP Ammopack STX117-AP STX117-AP X117 PNP TO92-AP Ammopack April 2010 Doc ID 6881 Rev 4 1/9 www.st.com 9 Absolute maximum ratings 1 STX112, STX117 STX117 , STX112 STX117 STX117 Complementary power Darlington transistors Features . I Good hFE , Rev 4 Value Unit 104 °C/W STX112, STX117 STX117 2 Electrical characteristics , current gain (VCE = - 3 V PNP) 3/9 Electrical characteristics STX112, STX117 STX117 Figure 4 ... STMicroelectronics
Original
datasheet

9 pages,
288.71 Kb

STX112 STX117 TEXT
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Abstract: applications. Ordering codes: STX112 STX112-AP TO-92 (shipment in bulk) (shipment in ammopack , STX112 ® SILICON NPN POWER DARLINGTON TRANSISTOR s s MONOLITHIC DARLINGTON , Junction Temperature October 2000 W -65 to 150 o C 150 o C 1/5 STX112 , Derating Curve V 2.5 2.8 1000 500 V V STX112 DC Current Gain Collector-Emitter , Voltage 3/5 STX112 TO-92 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN ... STMicroelectronics
Original
datasheet

5 pages,
150.75 Kb

STX112AP STX112 equivalent STX112-AP STX112 TEXT
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Abstract: applications. Ordering codes: STX112 STX112-AP TO-92 (shipment in bulk) (shipment in ammopack , STX112 ® SILICON NPN POWER DARLINGTON TRANSISTOR s s MONOLITHIC DARLINGTON , STX112 THERMAL DATA R t hj- amb Thermal Resistance Junction-ambient Max o 104 C/W , Safe Operating Area 2/5 Derating Curve V 2.5 2.8 1000 500 V V STX112 DC Current , Voltage Freewheel Diode Forward Voltage 3/5 STX112 TO-92 MECHANICAL DATA mm inch DIM ... STMicroelectronics
Original
datasheet

5 pages,
51.09 Kb

stx112-ap STX112 STX112 equivalent TEXT
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Abstract: . Ordering codes: STX112 STX112-AP TO-92 (shipment in bulk) (shipment in ammopack) INTERNAL SCHEMATIC , ® STX112 SILICON NPN POWER DARLINGTON TRANSISTOR s s MONOLITHIC DARLINGTON , -65 to 150 150 Uni t V V V A A mA W o o C C November 1999 1/5 STX112 THERMAL DATA R , Operating Area Derating Curve 2/5 STX112 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Freewheel Diode Forward Voltage 3/5 STX112 ... STMicroelectronics
Original
datasheet

5 pages,
50 Kb

STX112-AP STX112AP STX112 TEXT
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Abstract: the resonant flyback voltage capacitor. RBB, CBB and STX112 are the base drive components. Compared , network, when the STX112 is cut-off, we can write the following equation: Ly dI C V CC = r I + L , power dissipation on the RBB it is advisable to split it into resistors (RBB/2). When the STX112 is off , I D BB B ( on ) 2 where D is the duty cycle. Instead, when the STX112 is on, we have 2 [V ­ , C must be necessarily greater than 2V, because we must take into account the STX112 maximum ... STMicroelectronics
Original
datasheet

12 pages,
175.4 Kb

high voltage CRT transformer china tv schematic diagram Capacitor CBB high voltage darlington crt flyback transformer yoke diagram STX112 equivalent STX112 BU808DFI Thomson TV circuit diagram transistor bu808dfi TV flyback transformer AN1184 BU808DFI equivalent bu808dfi AN1184 BU808DFI HORIZONTAL DRIVER TRANSISTOR AN1184 BU808DFI AN1184 AN1184 BU808DFI darlington circuits BU808DFI equivalent TEXT
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Abstract: Cf the resonant flyback voltage capacitor. RBB, C BB and STX112 are the base drive components , output network, when the STX112 is cut-off, we can write the following equation: Ly dI C -(A , power dissipation on the RBB it is advisable to split it into resistors (RBB/2). When the STX112 is off , I D BB B ( on ) 2 where D is the duty cycle. Instead, when the STX112 is on, we have 2 [V ­ , C must be necessarily greater than 2V, because we must take into account the STX112 maximum ... STMicroelectronics
Original
datasheet

12 pages,
701.95 Kb

Capacitor CBB crt tv flyback transformer driver pal 001a ST DARLINGTON TRANSISTOR AN1184 TS1 SERIES TRANSISTOR bu808dfi TV horizontal Deflection Systems BU808DF Thomson TV circuit diagram STX112 equivalent HORIZONTAL DRIVER TRANSISTOR STX112 BU808DFI equivalent BU808DFI TEXT
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Abstract: STX112 are the base drive components. Compared to a traditional base drive transformer, the circuit , condition, applying Kirchhoff's law at the output network, when the STX112 is cut-off, we can write the , resistors (RBB/2). When the STX112 is off, the power dissipation on the resistor RBB is given by the , . Instead, when the STX112 is on, we have 2 [V ­ V' ] BB CE ( sat ) P = , necessarily greater than 2V, because we must take into account the STX112 maximum saturation voltage V'CE(sat ... STMicroelectronics
Original
datasheet

12 pages,
725.02 Kb

equivalent bu808dfi high voltage CRT transformer transistor x 313 BU808dfi transistor ST Thomson TV circuit diagram transistor BU808DFI TV flyback transformer USE OF TRANSISTOR crt tv flyback transformer driver BU808d AN1184 STX112 equivalent pal 001a HORIZONTAL DRIVER TRANSISTOR BU808DFI STX112 BU808DF BU808DFI equivalent TEXT
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Abstract: type NPN 2STX1360 2STX1360 2STL1360 2STL1360 STX724 STX724 STSA1805 STSA1805 STSA851 STSA851 STX715 STX715 STX112 STBV45 STBV45 STBV42 STBV42 STBV32 STBV32 ... Original
datasheet

1 pages,
50.23 Kb

STF724 STF715 STBV32 smps 450 W computer smps BULK128D-B 450 w computer smps 2stx1360 STN724 STN749 stx13005 STX13003 STT818B STN888 STN851 STN826 STN790A 2STF1360 2STN1360 STX112 TEXT
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Abstract: Line-driver transistor Up to 140V 1A to 2A (TO-92) STX715/STX112 Horizontal deflection transistor ... STMicroelectronics
Original
datasheet

12 pages,
526.87 Kb

LNBP22 STV8203A mc34063 flyback mc34063 pwm led MC34063 MOSFET TSOP48-SO44 STV0360 MC34063 driver led mc34063 pwm STV0399 STV9306 mc34063 step up with mosfet LED DRIVER BY MC34063 mc34063 step down with mosfet STV0499 lm317x flyback MC34063 STV9302A str TV SMPS transistor M3004 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
: STX112 (shipment in bulk) STX112-AP (shipment in ammopack) INTERNAL Datasheet SILICON NPN POWER DARLINGTON TRANSISTOR STX112 6881 02/10/2000 5 Raw Text Format STX112 SILICON * Pulsed: Pulse duration = 300 m s, duty cycle 1.5 % Safe Operating Area Derating Curve STX112 2/5 Saturation Voltage Base-Emitter On Voltage STX112 3/5 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6881-v1.htm
STMicroelectronics 03/10/2000 6 Kb HTM 6881-v1.htm
plastic package. It is intented for use in linear and switching applications. Ordering codes: STX112 (shipment in bulk) STX112-AP (shipment in ammopack) INTERNAL SCHEMATIC DIAGRAM R 1 Typ.= 7K Datasheet SILICON NPN POWER DARLINGTON TRANSISTOR STX112 6881 02/10/2000 5 Raw Text Format STX112 SILICON NPN POWER STX112 2/5 DC Current Gain Base-Emitter Saturation Voltage Freewheel Diode Forward Voltage
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6881.htm
STMicroelectronics 20/10/2000 6.24 Kb HTM 6881.htm
ST | SILICON NPN POWER DARLINGTON TRANSISTOR Datasheet SILICON NPN POWER DARLINGTON TRANSISTOR STX112 Document Format Size Document Number Date Update Pages Portable Document Format 6881 02/10/2000 5 Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/6881.htm
STMicroelectronics 20/10/2000 2.7 Kb HTM 6881.htm
ST | SILICON NPN POWER DARLINGTON TRANSISTOR Datasheet SILICON NPN POWER DARLINGTON TRANSISTOR STX112 Document Format Size Document Number Date Update Pages Portable Document Format 6881 02/10/2000 5 Raw Text Format
/datasheets/files/stmicroelectronics/stonline/books/all/6881-v1.htm
STMicroelectronics 03/10/2000 2.65 Kb HTM 6881-v1.htm
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STX112 SILICON
/datasheets/files/stmicroelectronics/stonline/books/tocnew/ds/189.htm
STMicroelectronics 20/10/2000 7.46 Kb HTM 189.htm
BU808DFI BU808DFI and the STX112 (pre-driver) are already in full production and thanks to the manufacturing process
/datasheets/files/stmicroelectronics/stonline/prodpres/discrete/powebipo/01bip_3.htm
STMicroelectronics 13/07/2000 4.94 Kb HTM 01bip_3.htm
resonant flyback voltage capacitor. R BB , C BB and STX112 are the base drive components. Compared to a , when the STX112 is cut-off, we can write the following equation: (A) normally, (B) so, the eq. (A into resistors (R BB /2). When the STX112 is off, the power dissipation on the resistor R BB is given by the following equation (L) where D is the duty cycle. Instead, when the STX112 is on, we have (M STX112 maximum saturation voltage V ' CE(sat) at I ' C(sat) . The capacitor voltage ripple V C (t) must
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6921.htm
STMicroelectronics 20/10/2000 26.21 Kb HTM 6921.htm
line yoke and C f the resonant flyback voltage capacitor. R BB , C BB and STX112 are the base condition, applying Kirchhoff's law at the output network, when the STX112 is cut-off, we can write the the R BB it is advisable to split it into resistors (R BB /2). When the STX112 is off, the power , when the STX112 is on, we have (M) So, the total power dissipation on the resistor is: (N) 3.1.3. C than 2V, because we must take into account the STX112 maximum saturation voltage V ' CE(sat) at I '
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6921-v1.htm
STMicroelectronics 25/05/2000 25.01 Kb HTM 6921-v1.htm
TRANSISTOR STD616A-1 STD616A-1   HIGH VOLTAGE NPN POWER TRANSISTOR STX112
/datasheets/files/stmicroelectronics/stonline/books/toc/ds/189-v1.htm
STMicroelectronics 02/02/2001 235.34 Kb HTM 189-v1.htm
STX112 SILICON NPN POWER DARLINGTON TRANSISTOR THD200FI THD200FI
/datasheets/files/stmicroelectronics/stonline/books/toc/ds/189.htm
STMicroelectronics 20/10/2000 237.97 Kb HTM 189.htm

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