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Part Manufacturer Description Datasheet BUY
EDB9315A-Z Cirrus Logic EP9315/12 Development System; For Use With:EP9315/12 Embedded Processors visit Digikey
EDB7312 Cirrus Logic Microprocessor Development Tool; For Use With:EP7312; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No visit Digikey
CDB8420 Cirrus Logic Development kit; Kit Contents:Evaluation Board; For Use With:CS8420; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No visit Digikey
5.16.01 FLASHER PORTABLE Seggar Embedded Software Solutions FLASHER PORTABLE visit Digikey
5.17.01 FLASHER PRO Seggar Embedded Software Solutions FLASHER PRO visit Digikey
5.16.02 FLASHER PORTABLE PLUS Seggar Embedded Software Solutions FLASHER PORTABLE PLUS visit Digikey

STROBE FLASHER USE IGBT

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR , e TO-3P APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter , Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND , satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So Mitsubishi
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 STROBE FLASHER USE CT20VML , TRANSISTOR CT20VML-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM (A) PERFORMANCE CURVES , . 130A 4.5 q 2.5 2.6 ± 0.4 2.5 e TO-220C APPLICATION Strobe Flasher , SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = 120A CM = 300uF VGE = Mitsubishi
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 STROBE FLASHER USE CT30TM-8 OUTLINE , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR , TO-220F APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter , Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND , satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So Mitsubishi
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VM-8 STROBE FLASHER USE CT30VM-8 OUTLINE , CT30VM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000uF 160 TC < 50°C = , 180A 4.5 q 2.5 2.6 ± 0.4 2.5 e TO-220C APPLICATION Strobe Flasher. MAXIMUM , APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = Mitsubishi
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symbol of capacitor 1000uf capacitor 800 uf voltage rating 330v 25 v 1000uF capacitor 30 v 1000uF capacitor 50 v 1000uF capacitor
Abstract: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT30VM-8 STROBE FLASHER USE CT30VM-8 V c e s , APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (To = 25°C) Parameter Conditions Ratings , . 1999 A MITSUBISHI ELECTRIC MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT30VM-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT GATE- EM ITTE R V O LTA G E , Vtrlg W - Rg -©> Oâ'" W V Vg A VCM IGBT G ATE VO LT A G E VG VCE Xe TU B E -
OCR Scan
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VM-8 STROBE FLASHER USE CT20VM-8 OUTLINE , CT20VM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 800uF 160 < TC = 50 , 130A 4.5 q 2.5 2.6 ± 0.4 2.5 e TO-220C APPLICATION Strobe Flasher. MAXIMUM , APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = Mitsubishi
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700uF 2.6 uf 400v maximum ic IGBT
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE CT25AS-8 OUTLINE , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM , 150A e MP-3 APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj , ) Figure 1 APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM Mitsubishi
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10MAX
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20TM-8 STROBE FLASHER USE CT20TM-8 OUTLINE , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20TM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR , TO-220F APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter , Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND , satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So Mitsubishi
Original
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASL-8 STROBE FLASHER USE CT20ASL , V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASL-8 STROBE FLASHER USE , 130A e MP-3 APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25 , ) Figure 1 APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM Mitsubishi
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE CT25ASJ , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM , 150A ¡Drive Voltage VGE=4V ¡Small Package MP-3 e MP-3 APPLICATION Strobe Flasher , 20uH TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V ICP Mitsubishi
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cm400uf
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH , V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE , 200A e TO-220F APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25 , VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION , RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please Mitsubishi
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strobe trigger
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE , uA uA V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE , 0.4 4.5 0.8 e TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = , IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = 120A CM = 700uF VGE = 28V Mitsubishi
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130A
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 ' VCES >ICM 400V · 200A APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES Vges Vgem Icm Tj , 4 -2 8 MITSUBISHI ELECTRIC MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT < 5 O MAXIMUM PULSE COLLECTOR CURRENT , SIGNAL Vtrig A IGBT GATE Vg VOLTAGE Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V Ip -
OCR Scan
CT35SM8 RGS30 S200A
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE CT20ASJ , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM , 130A ¡Drive Voltage VGE=4V ¡Small Package MP-3 e MP-3 APPLICATION Strobe Flasher , TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V ICP = 120A CM = Mitsubishi
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400UF
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20AS-8 STROBE FLASHER USE CT20AS-8 OUTLINE , V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20AS-8 STROBE FLASHER USE , 130A e MP-3 APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25 , Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND , satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So Mitsubishi
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130a Gate Turn-off
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE CT25ASJ-8 OUTLINE DRAWING , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM , 150A ¡Drive Voltage VGE=4V ¡Small Package MP-3 e MP-3 APPLICATION Strobe Flasher , 20uH TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V ICP Renesas Technology
Original
Abstract: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 Vces , . 1999 MITSUBISHI ELECTRIC MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT35SM-8 STROBE FLASHER USE , EMITTER r COLLECTOR Ã"£ TO-3P APPLICATION Strobe Flasher. MAXIMUM RATINGS (To = 25°C) Symbol Parameter , PULSE COLLECTOR CURRENT icp (A) Figure 2 APPLICATION EXAMPLE IXe Rg O-Wr I-o Vtrig VG vce IGBT Cm + W- vcm TRIGGER SIGNAL Vtrig IGBT GATE VG VOLTAGE Xe TUBE CURRENT Ixe A RECOMMEND CONDITION MAXIMUM -
OCR Scan
strobe IGBT
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VSL-8 STROBE FLASHER USE CT20VSL , V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VSL-8 STROBE FLASHER USE , 130A e TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25 , VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION , RG 47) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please Mitsubishi
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flasher circuit 5A current
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VS-8 STROBE FLASHER USE CT30VS-8 OUTLINE , uA uA V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VS-8 STROBE FLASHER USE , 0.4 4.5 0.8 e TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = , IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = 160A CM = 800uF VGE = 28V Mitsubishi
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Abstract: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 Vces , Ã"e TO-22QF APPLICATION Strobe Flasher. MAXIMUM RATINGS (To = 25°C) Symbol Parameter Conditions , A MITSUBISHI ELECTRIC Feb. 1999 MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT40TMH-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT GATE-EM ITTER VOLTAGE VGE (V) Figure 1 APPLICATION EXAMPLE IXe Rg Oâ'"VNAr- I-o Vtrlg VG vce IGBT Cm + W- vcm TRIGGER SIGNAL Vtrlg -
OCR Scan
1200HF
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