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Part : MINISTROBLED Supplier : CHAUVET Manufacturer : Newark element14 Stock : 16 Best Price : $16.99 Price Each : $16.99
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STROBE FLASHER USE IGBT

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR , e TO-3P APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter , Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND , satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So Mitsubishi
Original
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 STROBE FLASHER USE CT20VML , TRANSISTOR CT20VML-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM (A) PERFORMANCE CURVES , . 130A 4.5 q 2.5 2.6 ± 0.4 2.5 e TO-220C APPLICATION Strobe Flasher , SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = 120A CM = 300uF VGE = Mitsubishi
Original
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 STROBE FLASHER USE CT30TM-8 OUTLINE , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR , TO-220F APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter , Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND , satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So Mitsubishi
Original
Abstract: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT30VM-8 STROBE FLASHER USE CT30VM-8 V c e s , APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (To = 25°C) Parameter Conditions Ratings , . 1999 A MITSUBISHI ELECTRIC MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT30VM-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT GATE- EM ITTE R V O LTA G E , Vtrlg W - Rg -©> Oâ'" W V Vg A VCM IGBT G ATE VO LT A G E VG VCE Xe TU B E -
OCR Scan
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VM-8 STROBE FLASHER USE CT30VM-8 OUTLINE , CT30VM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000uF 160 TC < 50°C = , 180A 4.5 q 2.5 2.6 ± 0.4 2.5 e TO-220C APPLICATION Strobe Flasher. MAXIMUM , APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = Mitsubishi
Original
symbol of capacitor 1000uf capacitor 800 uf voltage rating 330v 25 v 1000uF capacitor 30 v 1000uF capacitor 50 v 1000uF capacitor
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VM-8 STROBE FLASHER USE CT20VM-8 OUTLINE , CT20VM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 800uF 160 < TC = 50 , 130A 4.5 q 2.5 2.6 ± 0.4 2.5 e TO-220C APPLICATION Strobe Flasher. MAXIMUM , APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = Mitsubishi
Original
700uF 2.6 uf 400v maximum ic IGBT
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE CT25AS-8 OUTLINE , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM , 150A e MP-3 APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj , ) Figure 1 APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM Mitsubishi
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10MAX
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20TM-8 STROBE FLASHER USE CT20TM-8 OUTLINE , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20TM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR , TO-220F APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter , Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND , satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So Mitsubishi
Original
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASL-8 STROBE FLASHER USE CT20ASL , V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASL-8 STROBE FLASHER USE , 130A e MP-3 APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25 , ) Figure 1 APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM Mitsubishi
Original
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE CT25ASJ , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM , 150A ¡Drive Voltage VGE=4V ¡Small Package MP-3 e MP-3 APPLICATION Strobe Flasher , 20uH TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V ICP Mitsubishi
Original
cm400uf
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH , V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE , 200A e TO-220F APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25 , VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION , RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please Mitsubishi
Original
strobe trigger
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE , uA uA V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE , 0.4 4.5 0.8 e TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = , IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = 120A CM = 700uF VGE = 28V Mitsubishi
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130A
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 ' VCES >ICM 400V · 200A APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES Vges Vgem Icm Tj , 4 -2 8 MITSUBISHI ELECTRIC MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT < 5 O MAXIMUM PULSE COLLECTOR CURRENT , SIGNAL Vtrig A IGBT GATE Vg VOLTAGE Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V Ip -
OCR Scan
CT35SM8 RGS30 S200A
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE CT20ASJ , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM , 130A ¡Drive Voltage VGE=4V ¡Small Package MP-3 e MP-3 APPLICATION Strobe Flasher , TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V ICP = 120A CM = Mitsubishi
Original
400UF
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20AS-8 STROBE FLASHER USE CT20AS-8 OUTLINE , V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20AS-8 STROBE FLASHER USE , 130A e MP-3 APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25 , Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND , satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So Mitsubishi
Original
130a Gate Turn-off
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE CT25ASJ-8 OUTLINE DRAWING , .1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM , 150A ¡Drive Voltage VGE=4V ¡Small Package MP-3 e MP-3 APPLICATION Strobe Flasher , 20uH TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V ICP Renesas Technology
Original
Abstract: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 Vces , . 1999 MITSUBISHI ELECTRIC MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT35SM-8 STROBE FLASHER USE , EMITTER r COLLECTOR Ã"£ TO-3P APPLICATION Strobe Flasher. MAXIMUM RATINGS (To = 25°C) Symbol Parameter , PULSE COLLECTOR CURRENT icp (A) Figure 2 APPLICATION EXAMPLE IXe Rg O-Wr I-o Vtrig VG vce IGBT Cm + W- vcm TRIGGER SIGNAL Vtrig IGBT GATE VG VOLTAGE Xe TUBE CURRENT Ixe A RECOMMEND CONDITION MAXIMUM -
OCR Scan
strobe IGBT
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VSL-8 STROBE FLASHER USE CT20VSL , V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VSL-8 STROBE FLASHER USE , 130A e TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25 , VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION , RG 47) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please Mitsubishi
Original
flasher circuit 5A current
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VS-8 STROBE FLASHER USE CT30VS-8 OUTLINE , uA uA V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VS-8 STROBE FLASHER USE , 0.4 4.5 0.8 e TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = , IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = 160A CM = 800uF VGE = 28V Mitsubishi
Original
Abstract: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 Vces , Ã"e TO-22QF APPLICATION Strobe Flasher. MAXIMUM RATINGS (To = 25°C) Symbol Parameter Conditions , A MITSUBISHI ELECTRIC Feb. 1999 MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT40TMH-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT GATE-EM ITTER VOLTAGE VGE (V) Figure 1 APPLICATION EXAMPLE IXe Rg Oâ'"VNAr- I-o Vtrlg VG vce IGBT Cm + W- vcm TRIGGER SIGNAL Vtrlg -
OCR Scan
1200HF
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