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STROBE FLASHER USE IGBT

Catalog Datasheet Results Type PDF Document Tags
Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 CT25ASJ-8 STROBE FLASHER USE ! CT25ASJ-8 CT25ASJ-8 i , MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 CT25ASJ-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM , . 150A · Saturation Voltage Vge= 4 V · Small Package MP-3 APPLICATION Strobe Flasher , TRIGGER SIGNAL Vtrig A IGBT GATE VOLTAGE Vg Xe TUBE CURRENT Ixel RECOMMEND CONDITION V , RGS30Q RGS30Q) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please ... OCR Scan
datasheet

2 pages,
59.63 Kb

STROBE FLASHER USE IGBT CT25ASJ-8 CT25ASJ-8 abstract
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20AS-8 CT20AS-8 STROBE FLASHER USE CT20AS-8 CT20AS-8 %% · , STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT GATE-EMITTER VOLTAGE V ge (V) Figure 1 APPLICATION EXAMPLE TRIGGER SIGNAL Vtrig A IGBT GATE VOLTAGE Vg , .- 130A APPLICATION Strobe Flasher. MAXIMUM RATINGS (To = 25"C> Symbol VCES V ges Vgem ICM Ti , 1A. (In general, It is satisfied if R G S 30fi) Notice 2. IGBT has MOS structure and its gate is ... OCR Scan
datasheet

2 pages,
61.2 Kb

STROBE FLASHER USE IGBT CT20AS-8 CT20AS-8 abstract
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 CT20VML-8 STROBE FLASHER USE CT20VML-8 CT20VML-8 , MITSUBISHI ELECTRIC MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 CT20VML-8 STROBE FLASHER USE , '3: TO-220C APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES V ges Vgem iCM Tj Tstg , APPLICATION EXAMPLE TRIGGER SIGNAL Vtrlg A IGBT GATE VOLTAGE Vg Xe TUBE CURRENT Ixe , satisfied if R G S 4 7 ii) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. ... OCR Scan
datasheet

2 pages,
58.49 Kb

STROBE FLASHER USE IGBT CM400 MITSUBISHI CM400 CT20VML-8 CT20VML-8 abstract
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Abstract: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT30TM-8 CT30TM-8 STROBE FLASHER USE CT30TM-8 CT30TM-8 , ELECTRIC Feb. 1999 MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT30TM-8 CT30TM-8 STROBE FLASHER USE PERFORMANCE , "e TO-22QF APPLICATION Strobe Flasher. MAXIMUM RATINGS (To = 25°C) Symbol Parameter Conditions , IGBT ZS Cm + VCM TRIGGER SIGNAL Vtrig IGBT GATE VG VOLTAGE Xe TUBE CURRENT Ixe A RECOMMEND , Rg > 30Q.) Notice 2. IGBT has MOS structure and Its gate is Insulated by thin silicon oxide. So ... OCR Scan
datasheet

2 pages,
83.81 Kb

CT30TM-8 CT30TM-8 abstract
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Abstract: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT35SM-8 CT35SM-8 STROBE FLASHER USE CT35SM-8 CT35SM-8 , MITSUBISHI ELECTRIC MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT35SM-8 CT35SM-8 STROBE FLASHER USE PERFORMANCE , e EMITTER r COLLECTOR "£ TO-3P APPLICATION Strobe Flasher. MAXIMUM RATINGS (To = 25°C) Symbol , COLLECTOR CURRENT icp (A) Figure 2 APPLICATION EXAMPLE IXe Rg O-Wr I-o Vtrig VG vce IGBT Cm + W- vcm TRIGGER SIGNAL Vtrig IGBT GATE VG VOLTAGE Xe TUBE CURRENT Ixe A RECOMMEND CONDITION MAXIMUM CONDITION VCM ... OCR Scan
datasheet

2 pages,
85.07 Kb

strobe IGBT STROBE FLASHER USE IGBT CT35SM-8 CT35SM-8 abstract
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 CT20ASJ-8 STROBE FLASHER USE CT20ASJ-8 CT20ASJ-8 , MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 CT20ASJ-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM , 130A ¡Drive Voltage VGE=4V ¡Small Package MP-3 e MP-3 APPLICATION Strobe Flasher , TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V ICP = 120A CM = ... Original
datasheet

2 pages,
29.9 Kb

CT20ASJ-8 400UF STROBE FLASHER USE IGBT CT20ASJ-8 abstract
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 CT20VS-8 STROBE FLASHER USE CT20VS-8 CT20VS-8 OUTLINE , V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 CT20VS-8 STROBE FLASHER USE , 0.4 4.5 0.8 e TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = , IXe CM + � Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = 120A CM = 700" VGE = 28V 360V ... Original
datasheet

2 pages,
27.53 Kb

CT20VS-8 130A STROBE FLASHER USE IGBT CT20VS-8 abstract
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 CT30TM-8 STROBE FLASHER USE CT30TM-8 CT30TM-8 OUTLINE , MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 CT30TM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR , TO-220F APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25癈) Parameter , Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND , satisfied if RG 30) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So ... Original
datasheet

2 pages,
27.19 Kb

CT30TM-8 STROBE FLASHER USE IGBT CT30TM-8 abstract
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Abstract: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VM-8 CT20VM-8 STROBE FLASHER USE CT20VM-8 CT20VM-8 OUTLINE , CT20VM-8 CT20VM-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 800µF 160 < TC = 50°C 120 , 130A 4.5 q 2.5 2.6 ± 0.4 2.5 e TO-220C APPLICATION Strobe Flasher. MAXIMUM , EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + ­ Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = ... Original
datasheet

2 pages,
26.33 Kb

maximum ic IGBT CT20VM-8 2.6 uf 400v 700uF CT20VM-8 abstract
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Abstract: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT40TMH-8 CT40TMH-8 STROBE FLASHER USE CT40TMH-8 CT40TMH-8 , MITSUBISHI ELECTRIC Feb. 1999 MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT40TMH-8 CT40TMH-8 STROBE FLASHER USE , EMITTER "e TO-22QF APPLICATION Strobe Flasher. MAXIMUM RATINGS (To = 25°C) Symbol Parameter , EXAMPLE IXe Rg O-VNAr- I-o Vtrlg VG vce IGBT Cm + W- vcm TRIGGER SIGNAL Vtrlg IGBT GATE VG , kept less than 1 A. (In general, it is satisfied if Rg > 30Q.) Notice 2. IGBT has MOS structure and ... OCR Scan
datasheet

2 pages,
76.83 Kb

CT40TMH-8 1200HF strobe IGBT STROBE FLASHER USE IGBT CT40TMH-8 abstract
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