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6168SA45LB Integrated Device Technology Inc LCC-20, Tube visit Integrated Device Technology
6168SA25PI Integrated Device Technology Inc PDIP-20, Tube visit Integrated Device Technology
6168SA20LB Integrated Device Technology Inc LCC-20, Tube visit Integrated Device Technology
6168LA20LB Integrated Device Technology Inc LCC-20, Tube visit Integrated Device Technology
6168LA35SO Integrated Device Technology Inc SOIC-20, Tube visit Integrated Device Technology
6168LA25SO8 Integrated Device Technology Inc SOIC-20, Reel visit Integrated Device Technology

STR F 6168

Catalog Datasheet MFG & Type PDF Document Tags

STR F 6168

Abstract: str 6168 271.75 E4 61-68 62.25 67.75 S17 272-279 273.25 278.75 S01 68-75 69.25 , 631.25 636.75 4 61-68 62.25 67.75 42 638-646 639.25 644.75 5 174-181 , . Belarus: PHILIPS OFFICE BELARUS, Hotel Minsk, Volodarski Str. 6, 220050 MINSK, Tel. (5172) 200 915, Fax , COMPANY, Philips Components MSO PRC, 6/F Building 2 No. 889, Yi Shan Road, SHANGHAI 200233, Tel. (21 , Kong: PHILIPS HONG KONG, Components Division, Unit 003-005, G/F, Hong Kong Ind. Technology Centre, 72
Philips Components
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STR F 6168

Abstract: CGH40025 Capacitance VSWR CGS CDS CGD ­ ­ ­ 9.0 2.6 0.4 ­ ­ ­ pF pF pF VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz VDS = 28 V, Vgs = -8 V, f = 1 MHz Notes: 1 Measured on , , 10.0pF,+/-5%, 0603 CAP, 39pF, +/-5%, 0603 CAP,33000PF, 0805,100V, X7R CONN SMA STR PANEL JACK RECP HEADER , S21 92.09 87.31 83.18 79.49 76.10 72.93 69.93 67.07 64.33 61.68 59.12 56.64 54.22 51.87 49.58 47.34
Cree
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CGH40025 40025F STR F 6168 CGH40025P CGH40025-TB CGH40025F CGH4002

STR F 6168

Abstract: CGH40025F Capacitance CGS ­ 9.0 ­ pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS ­ 2.6 ­ pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD ­ 0.4 ­ pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Output Mismatch Stress Dynamic , ,33000PF, 0805,100V, X7R 2 CONN SMA STR PANEL JACK RECP 2 HEADER RT>PLZ .1CEN LK 5POS 1 - , 1.4 GHz 0.906 -175.84 4.10 61.68 0.022 -16.06 0.503 -152.12 1.5 GHz
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JESD22
Abstract: , POUT = 25 W CW Input Capacitance CGS â'" 9.0 â'" pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS â'" 2.6 â'" pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD â'" 0.4 â'" pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output , , 0603 2 C7,C14 J3,J4 J1 CAP,33000PF, 0805,100V, X7R 2 CONN SMA STR PANEL JACK RECP 2 , -14.39 0.489 -151.38 1.4 GHz 0.906 -175.84 4.10 61.68 0.022 -16.06 0.503 Cree
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STR F 6168

Abstract: CGH40025-TB Capacitance CGS ­ 9.0 ­ pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS ­ 2.6 ­ pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD ­ 0.4 ­ pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Output Mismatch Stress Dynamic , ,33000PF, 0805,100V, X7R 2 CONN SMA STR PANEL JACK RECP 2 HEADER RT>PLZ .1CEN LK 5POS 1 - , 1.4 GHz 0.906 -175.84 4.10 61.68 0.022 -16.06 0.503 -152.12 1.5 GHz
Cree
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j326 hemt .s2p Cree Microwave

STR F 6168 31 v power

Abstract: STR F 6168 Capacitance CGS ­ 9.0 ­ pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Output Capacitance CDS ­ 2.6 ­ pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Feedback Capacitance CGD ­ 0.4 ­ pF VDS = 28 V, Vgs = -8 V, f = 1 MHz Drain Efficiency4 Output Mismatch Stress Dynamic , ,33000PF, 0805,100V, X7R 2 CONN SMA STR PANEL JACK RECP 2 HEADER RT>PLZ .1CEN LK 5POS 1 - , 1.4 GHz 0.906 -175.84 4.10 61.68 0.022 -16.06 0.503 -152.12 1.5 GHz
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STR F 6168 31 v power MAG-S11 STR F 6168 31 rt 0608

STR 6456

Abstract: str f 6456 LTD. Baba Ilütca Str. B180B, Fl19 1612 Sofia Tel: 359 2 540078 Fax: 359 2 540562 Arrow Finland , Fax: 49 61 03 30 41 36 Eurodis Enatechnik Electronics GmbH Rendsburger Str. 24 30659 Hannover Tel , 30 4 69 08 90 Fax: 49 30 46 90 89 89 SEI/Jermyn GmbH Gasteiner Str. 6 10717 Berlin Tel: 49 30 8 62 20 , 77­30 SEI/Jermyn GmbH Weissenfelder Str. 3 85551 Kirchheim Tel: 49 89 9 09 90 30 Fax: 49 89 90 99 03 12 , Fax: 30 1 9017024 EBV Elektronik 1, Anaxagora Str. 17778 Tavros, Athens Tel: 30 1 34 14 300 Fax: 30 1
Temic Semiconductors
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STR 6456 str f 6456 STR G 6352 Johnson motor 2 607 022 013 TEL5413 str 6168

str f 6456

Abstract: str x 6456 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Sweden TE M IC , Office 3/F 501 Jiangchang W est Road 200436 Shanghai Tel: 86 21 5603 3193 Fax: 86 21 5603 3194 India , oido-D ong Suite 605. Singsong Bldg Youngdeungpo-Ku 150-010 Seoul Tel: 82 2 7851 136 F a x :82 2 7851 , 771 6886 Fax: 1 303 771 6887 Q uadR ep Rocky M tn. Inc. 19410 Rim o f the W orld M onum ent C olorado , 1 Fax: 45 8724 6660 A rrow -E X ATEC M ileparken 20 F. 2740 Skov lunde Tel: 45 4492 7000 Fax: 45
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OCR Scan
str x 6456 SM 5126 BP str 6668 AXP 209 IC 321 CJ 7121 str f 6468 11-7F

BV EI 304 3160

Abstract: str f 6456 China TEMIC Hong Kong Ltd. Shanghai Office 3/F 501 Jiangchang West Road 200436 Shanghai Tel: 86 21 5603 , 80111 Tel: 1303 7 7 16 8 8 6 Fax: 1 303 771 6887 QuadRep Rocky Min. Inc. 19410 Rim o f the W'orld , ELECTRONIC BG LTD Baba Iliitca Str. B180B. Fl 19 1612 Sofia Tel: 3592 54 00 78 Fax: 3592 54 05 62 EBV , , rue du Repos 69007 Lyon Tel: 33 4 7273 2127 Fax: 33 4 7869 1080 Avnet Zl du Phare 16. rue F. Arago , 7689 090 Fax: 49 30 7789 0930 SEI/Jermyn GmbH Gasteiner Str. 6 10717 Berlin Tel: 49 30 8622 061 Fax: 49
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OCR Scan
BV EI 304 3160 ic sw 2604 BV EI 303 3535 BV EI 304 3510 STR 6755 AMI Semiconductor 9449

ic str 6307

Abstract: str 6307 TEMIC U.K. Ltd Catalyst Weston Road Crewe Cheshire CW I4T F Tel: 44 1270 250 825 Fax: 44 1270 211 470 , Lamezanstrasse 10 1232 Wien Tel: 43 I 610620 F ax :43 Î 61062151 SEl/Elbatcx GmbH Eitnergasse 6 1232 Wien Tel: 43 , Abyhoej Tel: 45 86 250466 F ax :45 86 250660 AEG Industri A/S Roskildevej 8-10 2620 Albertslund Tel: 45 43 , Ilütca Str. BI80B, F119 1612 Sofia Tel: 359 2 540078 Fax: 359 2 540562 Czech Republic SPOERLE , Electronics GmbH St. Petersburger Str. 15 01069 Dresden Tel: 49 3 51 3 11 07-0 Fax: 49 3 51 3 II 07-73 EBV
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OCR Scan
ic str 6307 str 6307 STR S 6307 STR W 5456 C 76660 aeg 645 307 080

Pioneer PA 0016

Abstract: PA 0016 PIONEER 713 297 8872 China / Asia Pacific / Japan China TEMIC Shanghai Ltd. 3/F 501 Jiangchang W est Road , Fax: 82 2 7851 137 Taiwan, R.O.C. TEMIC Taiwan 1 7 F -1 .7 6 , Section 2 Tun Hwa South Road Taipei , : 852 2 805 5922 W tllias-Array Electronics Ltd. 200 Tai Lin Pai Road Unit 1.24/F. Wyler Centre Phase , Industrial CS Lid.(WPI) 8 F,76 Cheng Kung Road Sec. 1 Nanking Taipei Tel: 886 2 7885 20U Fax: 88h 2 7883 255 , Enatechnik Electronics GmbH St. Petersburger Str. 15 01309 Dresden Tel: 49 351 3361 304 Fax: 49 351 3361 306
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OCR Scan
Pioneer PA 0016 PA 0016 PIONEER 80241 TFK U 3212 M tfk U 209 B 55 A 436 TFK 626 E 1024

TFK 526

Abstract: TFK 626 E 1024 Sur 505 - 10 Piso 72000 Puebla. PUE Tel: 52:5 22 464634 F ax:525 22 464404 Semiconductors Texas , 713 297 8872 China / Asia Pacific / Japan China TEMIC Shanghai Ltd. 3/F 501 Jiangchang West Road , 6886 Fax: 1 303 771 6887 QuadRep Rocky Mtn. Inc. 19410 Rim o f the World Monument Colorado 80132 Tel , Road. S ec. 116 Tempo Arizona 85283 Tel: 1602 839 2102 F lix: 1 602 839 2126 Hawaii see Californie , P.O.Box 357, Camberwell VIC Tel: 61 3 8362 566 Fax: 61 3 8301 1764 Kaolink Trading Company Unit 12,9/F
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OCR Scan
TFK 526 Pioneer pa 4010 sie200 TFK 839 AEG TFK TELEFUNKEN Tfk 880 745 761-B

TDA 7277

Abstract: TDA 8345 Tem ic S e m i c o n d u c t o r s Addresses Europe France T E M IC F rance L es Q u a d ra , 1 3 0 6 0 7 0 0 0 Fax: 33 1 3 0 6 0 7111 T E M IC T E L E F U N K E N m ic ro e le ctro n ic G m b H , 707 300 Fax: 4 4 1344 4 27 371 Hungary T E M IC T E L E F U N K E N m ic ro e le ctro n ic H , E M IC T E L E F U N K E N m ic ro e le ctro n ic G m b H E rfu rte r S trasse 31 8 5 3 8 6 E ch in g Tel: 4 9 89 3 1 9 700 F ax: 49 89 319 4621 T E M IC T E L E F U N K E N m ic ro e le ctro n ic G m
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OCR Scan
TDA 7277 TDA 8345 TDA 7988 TDA 8344 tda 9580 TDA 9394

TFK U 3212 M

Abstract: TFK U 3212 28 T E M IC T E L E F U N K E N m icro electro n ic G m bH K ruppstrasse 6 4 5 1 2 8 Essen Tel: 4 9 , 7000 Fax: 33 I 3 0 6 0 7 t i l Spain T E M IC T E L E F U N K E N m icro e le ctro n ic G m bH T h , 707 300 Fax: 4 4 1344 4 2 7 371 Hungary T E M IC T E L E F U N K E N m icro electro n ic H ungary , L E F U N K E N m icro electronic G m bH E rfurter Strasse 31 85386 Eching Tel: 4 9 89 319 700 Fax , : 525 22 464 6 3 4 Fax: 525 22 464 4 0 4 China / Asia Pacific / Japan China T E M IC 3/F 501 2 0
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OCR Scan
TFK U 3212 telefunken rc 890 cd LIN 5642 G ta 8659 cn str f 6268 tfk 623

power transistor mrc 438

Abstract: POWER COMMAND HM 1211 DATA Iline = 15 mA; RSLPE = 20 ; Zline = 600 ; f = 1 kHz; Tamb = 25 °C for TEA1098ATV; Tj = 25 °C for , ; Zline = 600 ; f = 1 kHz; Tamb = 25 °C for TEA1098ATV; Tj = 25 °C for TEA1098AUH; AGC pin connected to LN , AMPLIFIER (PINS MIC+, MIC- AND LN) Gv(MIC-LN) Gv(f) voltage gain from pin MIC+/MIC- to LN VMIC = 5 mV (RMS) 43.3 - 44.3 ±0.25 45.3 - dB dB gain variation with f = 300 to 3400 Hz frequency referenced to 1 kHz , (f) voltage gain from pin DTMF to LN VDTMF = 50 mV (RMS) 24.35 - 25.35 ±0.25 26.35 - dB dB gain
ARM
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power transistor mrc 438 POWER COMMAND HM 1211 ARM10E ARM10 ARM1022E CP14 ARM1022ETM

STR F 6168 31 v power

Abstract: FCA-150 600 ; f = 1 kHz; Tamb = 25 °C for TEA1098TV; Tj = 25 °C for TEA1098UH; pin AGC connected to pin LN , TEA1098 CHARACTERISTICS Iline = 15 mA; RSLPE = 20 ; Zline = 600 ; f = 1 kHz; Tamb = 25 °C for , (RMS) 43.3 44.3 45.3 dB Gv(f) gain variation with frequency referenced to 1 kHz f , ) 24.35 25.35 26.35 dB Gv(f) gain variation with frequency referenced to 1 kHz f = 300 to , = 15 mV (RMS) 33.5 34.7 35.9 dB Gv(f) gain variation with frequency referenced to
Philips Semiconductors
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FCA-150 Handsfree full duplex TEA1098A VSO40

STR F 6168

Abstract: STR F 6168 31 v power DATA Iline = 15 mA; RSLPE = 20 ; Zline = 600 ; f = 1 kHz; Tamb = 25 °C for TEA1098ATV; Tj = 25 °C for , TEA1098A CHARACTERISTICS Iline = 15 mA; RSLPE = 20 ; Zline = 600 ; f = 1 kHz; Tamb = 25 °C for , (PINS MIC+, MIC- AND LN) Gv(MIC-LN) voltage gain from pin MIC+/MIC- to LN Gv(f) gain variation with f = 300 to 3400 Hz frequency referenced to 1 kHz 2000 Aug 18 VMIC = 5 mV (RMS) 22 , ) Gv(DTMF-LN) voltage gain from pin DTMF to LN Gv(f) gain variation with f = 300 to 3400 Hz
Philips Semiconductors
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envelope detector ic smd diode UM 08 electret foil piezo electric microphone al p53 smd handsfree IC

STR F 6168 31 v power

Abstract: STR F 6168 , an d the word processor. F e a tu r e s: â'¢ B u ilt-in M P U , C TC , an d C G C fu n ction s , its) w hich su p p ort I/O op eration on a b it b a sis. â'¢ F o u r ch an n els of tim er/coun , - 3 PB6 ^ PB7 3 PAO 3 PAI T M P Z 8 4 C 0 1 1A F - 6 EV [ -15 ^ PA2 H ALT [ 65 , address is output to the low-order 7 bits. PA0-PA7 8 (61-68) I/O 3-state The general-purpose , es th e c a p a b ilitie s o f the T o sh ib a T L C S-Z 8 0 C TC (T M P Z 84C 30A ) an d h a s the
Philips Semiconductors
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MGM298 bpc 53 tea1098a for application
Abstract: in t e f p n m 8207 ADVANCED DYNAMIC RAM CONTROLLER Provides All Signals Necessary to , AA CK B f R/W 5 0 ADVANCED ACKNOWLEDGE PORT B/READWRITE: In non-ECC mode, This pin is AACKB , enable input for a writ« ; operation. 6-153 210463-003 ¡n te f 8207 M IR V Table 1 , rn a l c o u n te rs and state flip -flo p s to be re s e t a nd upon release o f R ESET, d ata a p p e a rin g a t th e PDI p in is c lo cke d in b y th e P C LK outp ut. The states o f th e PD I, P C -
OCR Scan
TMPZ84C011A TMPZ84C011AF-6 TLCS-Z80 PUZ80-400 MPUZ80-401 PUZ80-402
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